fiAMOSPEC NPN SILICON POWER TRANSISTORS NPN ... fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, wide-band amplifiers and power 2N5038 oscillators in industrial and commercial applications. 2N5039 FEATURES: * High Speed -t f = 0.5 us (Max ) * < = Low Vogisat) = 2-5 V @ I-=20A 20 AMPERE NPN SILICON POWER TRANSISTORS MAXIMUM RATINGS 75-90 VOLTS Characteristic Symbol 2N5038 2N5039 Unit 140 WATTS Collector-Emitter Voltage Veeo 90 75 V Collector-Base Voltage Vepo 150 120 Collector-Emitter Voltage Voev 150 120 V Emitter-Base Voltage Veso 7 Vv Collector Current-Continuous le 20 A - Peak 30 Base Current lp 5 A Total Power Dissipation@T,=25C Pp 140 WwW Derate above 25C 0.8 wc Operating and Storage Junction Ty. Ts1 C Temperature Range - 65 to +200 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case Rejc 1.25 c PIN 1.BASE Z.EMINTER COLLECTOR(CASE) FIGURE -1 POWER DERATING 160 pim | MILLIMETERS @ 140 MIN MAX $ 120 A | 38.75 | 30.96 Zz B 19.28 | 22.23 2 100 Cc 796 9.28 a D | 1118 | 1219 3 E | 25.20 | 2667 a 60 F 092 | 1.09 Ww 40 G 1.38 1.62 3 H 29.90 | 30.40 * 20 l 16.64 | 17.30 a 0 J 388 | 436 0 2 50 75 100 125 150 175 200 K | 10.67 | 11.18 Tc , TEMPERATURE( C)a 2N5038, 2N5039 NPN ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) Vv Vv (Ig = 200 mA, Ip = 0) 2N5038 crows) 90 2N5039 75 Collector Cutoff Current loex mA (Vog=140 V, Vagiom = 1.5 V ) 2N5038 50 (Veg=110 V, Vagiom = 1:5 V ) 2N5039 50 (Veg=100 V, Veciom = 1-5 V, Te = 150C ) 2N5038 10 (Vee=85 V, Veco = 1-5 V, T. = 150C) 2NS5039 10 Emitter Cutoff Current lego mA (Veg =5.0V,1,=0) 2N5038 5 2N5039 15 (Veg = 7.0V,1,=0) Both 50 ON CHARACTERISTICS (1) DC Current Gain hFE (Ig = 12A, Veg = 5.0 V) 2N5038 20 100 (lg = 10A, Veg = 5.0V) 2N5039 20 100 Collector - Emitter Saturation Voltage VoE{sat) V (le = 20A, 1, =5.0A) 2.5 Base - Emitter Saturation Voltage Vv Vv (I =20A, 1, =5.0A) BE(sat) 3.3 SWITCHING CHARACTERISTICS Rise Time Veg = 30 V t, 0.5 us (lg = 12 A, Igy = -Ipg = 1.2A) 2N5038 Storage Time t. 1.5 us (lp = 10 A, Igy =-lpp =1.0A) 2N5039 Fall Time t; 0.5 us (1) Pulse Test: Pulse width = 300 us , Duty Cycle = 2.0% ACTIVE REGION SAFE OPERATING AREA (SOA) Ie , COLLECTOR CURRENT (Amp) - Bondng Wire Limit 0.5{ _ _ _ Thermaly Limted T,*25C (Single Puse) Second Breakdown Limt 02 0.1 1 2 5 10 20 50 400 Vee , COLLECTOR EMITTER VOLTAGE (VOLTS) There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. Second breakdown pulse limits are valid for duty cycles to 10% ,At high case temperatures, thermal limitations may reduce the power that can be handled to values less than the limitations imposed by second breakdown. le-Vee