AON6774 30V N-Channel AlphaMOS General Description Product Summary VDS * Latest Trench Power AlphaMOS (MOS LV) technology * Integrated Schottky Diode (SRFET) * Very Low RDS(ON) at 4.5V VGS * Low Gate Charge * High Current Capability * RoHS and Halogen-Free Compliant 30V 85A ID (at VGS=10V) Application RDS(ON) (at VGS=10V) < 2.05m RDS(ON) (at VGS=4.5V) < 3.15m 100% UIS Tested 100% Rg Tested * DC/DC Converters in Computing, Servers, and POL * Isolated DC/DC Converters in Telecom and Industrial DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode G PIN1 S Orderable Part Number Package Type Form Minimum Order Quantity AON6774 DFN 5x6 Tape & Reel 3000 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy VDS Spike L=0.05mH C 10s TC=25C Power Dissipation B TA=25C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: October 2013 IAS 56 A EAS 78 mJ VSPIKE 36 V 48 Steady-State Steady-State W 19 6.2 RJA RJC W 4 TJ, TSTG Symbol t 10s A 35 PDSM TA=70C A 44 PD TC=100C V 260 IDSM TA=70C 20 66 IDM TA=25C Units V 85 ID TC=100C C Maximum 30 -55 to 150 Typ 15 40 2 www.aosmd.com C Max 20 50 2.6 Units C/W C/W C/W Page 1 of 6 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=10mA, VGS=0V Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=20V Gate Threshold Voltage VDS=VGS, ID=250A V 0.5 TJ=55C 1.4 100 nA 1.8 2.2 V 1.7 2.05 2.4 2.9 3.15 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=20A 2.5 gFS Forward Transconductance VDS=5V, ID=20A 105 VSD Diode Forward Voltage IS=1A,VGS=0V 0.42 IS Maximum Body-Diode Continuous Current TJ=125C DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance mA 100 VGS=10V, ID=20A Coss Units 30 VDS=30V, VGS=0V IDSS Max VGS=0V, VDS=15V, f=1MHz m m S 0.6 V 58 A 3000 pF 1280 pF 160 pF 2 3 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 43 60 nC Qg(4.5V) Total Gate Charge 20.5 30 nC Qgs Gate Source Charge Qgd f=1MHz VGS=10V, VDS=15V, ID=20A 1 7.7 nC Gate Drain Charge 7.5 nC tD(on) Turn-On DelayTime 11 ns 6 ns 38.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=15V, RL=0.75, RGEN=3 10 ns IF=20A, dI/dt=500A/s 22 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s 42 ns nC Body Diode Reverse Recovery Time A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA t 10s and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150C. D. The RJA is the sum of the thermal impedance from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: October 2013 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 80 VDS=5V 3.5V 60 60 4.5V 10V ID(A) ID (A) 3V 40 40 125C 20 20 25C VGS=2.5V 0 0 0 1 2 3 4 0 5 1 4 3 4 5 6 Normalized On-Resistance 1.6 VGS=4.5V 3 RDS(ON) (m ) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 2 VGS=10V 1 VGS=10V ID=20A 1.4 1.2 1 VGS=4.5V ID=20A 0.8 0 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 6 1.0E+01 ID=20A 1.0E+00 4 125C 1.0E-01 125C IS (A) RDS(ON) (m ) 5 3 2 25C 1.0E-02 1.0E-03 25C 1 1.0E-04 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: October 2013 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 4500 VDS=15V ID=20A 4000 Ciss 3500 Capacitance (pF) VGS (Volts) 8 6 4 3000 2500 2000 Coss 1500 1000 2 Crss 500 0 0 0 10 20 30 40 50 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 500 1000.0 10s 10s 100s 10.0 DC 1ms 10ms 1.0 TJ(Max)=150C TC=25C 0.1 TJ(Max)=150C TC=25C 400 Power (W) RDS(ON) limited 100.0 ID (Amps) 10 300 200 100 0 0.0 0.01 0.1 1 10 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Z JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZJC.RJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RJC=2.6C/W 1 0.1 PD Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: October 2013 www.aosmd.com Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 100 Power Dissipation (W) 50 80 Current rating ID(A) 40 30 20 10 0 60 40 20 0 0 25 50 75 100 125 150 0 25 TCASE ( C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE ( C) Figure 13: Current De-rating (Note F) 10000 TA=25C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 Z JA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 PD Single Pulse Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: October 2013 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.1.0: October 2013 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6