Transistor
RT1N250XSERIES
TransistorWithResistor
ForSwitchingApplication
SiliconNPNEpitaxialType
DESCRIPTION OUTLINEDRAWING      UNITmm
RT1N250U RT1N250C
RT1N250Xis a onechiptransistor
withbuilt-inbiasresistor,PNPtypeisRT1P250X.
FEATURE
Built-inbiasresistor(R1=200kΩ).
APPLICATION
Invertedcircuit,switchingcircuit,interfacecircuit,
drivercircuit.
Equivalentcircuit
         JEITA:−
JEDEC:−      JEITASC-59
JEDECSimilartoTO-236
TerminalConnector
Base
Emitter
Collector
TerminalConnector
Base
Emitter
Collector
RT1N250M RT1N250S
JEITASC-70
JEDEC:− JEITA:−
JEDEC:−
TerminalConnector
Base
Emitter
Collector
TerminalConnector
Emitter
Collector
Base
0.15
00.1
0.55
0.7
0.3
0.40.80.4 1.6
0.5
0.51.0
1.6
0.16
00.1
0.8
1.1
0.4
0.51.50.5 2.5
0.95
0.95
1.90
2.9
0.15
00.1
0.7
0.9
0.3
1.25
0.425 2.1
0.650.65
1.3
2.0
0.425
4.0
1.0
1.0
14.0 3.0
1.27 1.27
0.45
0.1
2.5
0.4
C
(OUT)
E
(GND)
B
(IN)
R1
ISAHAYA
ELECTRONICS
CORPORATION
Transistor
RT1N250XSERIES
TransistorWithResistor
ForSwitchingApplication
SiliconNPNEpitaxialType
MAXIMUMRATING(Ta=25)
RATING
SYMBOL PARAMETER RT1N250U RT1N250M RT1N250C RT1N250S UNIT
CBO CollectortoBasevoltage 50 V
EBO EmittertoBasevoltage 6V
CEO CollectortoEmittervoltage 50 V
 C Collectorcurrent 100 mA
CM PeakCollectorcurrent 200 mA
Collectordissipation(Ta=25)150200 450 mW
Tj Junctiontemperature +150 +150
stg Storagetemperature -55+150 -55+150
ELECTRICALCHARACTERISTICS(Ta=25)
LIMIT
SYMBOL PARAMETER TESTCONDITION MIN TYP MAX UNIT
(BR)CEO
CtoEbreakdownvoltage IC=100μARBE=50 V
CBO Collectorcutoffcurrent VCB=50VIE=0 0.1 μA
FE DCforwardcurrentgain VCE=5VIC=1mA 100
CE(sat) CtoEsaturationvoltage IC=0.5mAIB=0.05mA 0.3 V
Inputresistance 200 kΩ
Gainbandwidthproduct VCE=6VIE=-10mA 200 MHz
ISAHAYA
ELECTRONICS
CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunct
ion or
mishap.
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ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used
under circumstances in which human lif
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Jan.2003