© Semiconductor Components Industries, LLC, 2017
February, 2020 − Rev. 1
1Publication Order Number:
FFSH10120A/D
Silicon Carbide Schottky
Diode
1200 V, 10 A
FFSH10120A
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size & cost.
Features
•Max Junction Temperature 175°C
•Avalanche Rated 100 mJ
•High Surge Current Capacity
•Positive Temperature Coefficient
•Ease of Paralleling
•No Reverse Recovery/No Forward Recovery
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
•General Purpose
•SMPS, Solar Inverter, UPS
•Power Switching Circuits
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TO−247−2LD
CASE 340CL
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
Schottky Diode
MARKING DIAGRAM
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FFSH10120A = Specific Device Code
1
2
$Y&Z&3&K
FFSH
10120A
1. Cathode 2. Anode
FFSH10120A
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2
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol Parameter Value Unit
VRRM Peak Repetitive Reverse Voltage 1200 V
EAS Single Pulse Avalanche Energy (Note 1) 100 mJ
IFContinuous Rectified Forward Current @ TC < 158°C 10 A
Continuous Rectified Forward Current @ TC < 135°C 17
IF, Max Non-Repetitive Peak Forward Surge Current TC = 25°C, 10 ms850 A
TC = 150°C, 10 ms800 A
IF,SM Non-Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 90 A
IF,RM Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 35 A
Ptot Power Dissipation TC = 25°C 193 W
TC = 150°C 32 W
TJ, TSTG Operating and Storage Temperature Range −55 to +175 °C
TO−247 Mounting Torque, M3 Screw 60 Ncm
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. EAS of 100 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 20 A, V = 50 V.
THERMAL CHARACTERISTICS
Symbol Parameter Value Unit
RqJC Thermal Resistance, Junction to Case, Max 0.78 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol Parameter Test Condition Min Typ Max Unit
VFForward Voltage IF = 10 A, TC = 25°C−1.45 1.75 V
IF = 10 A, TC = 125°C−1.7 2.0
IF = 10 A, TC = 175°C−2.0 2.4
IRReverse Current VR = 1200 V, TC = 25°C− − 200 mA
VR = 1200 V, TC = 125°C− − 300
VR = 1200 V, TC = 175°C− − 400
QCTotal Capacitive Charge V = 800 V −62 −nC
CTotal Capacitance VR = 1 V, f = 100 kHz −612 −pF
VR = 400 V, f = 100 kHz −58 −
VR = 800 V, f = 100 kHz −47 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Part Number Top Marking Package Shipping
FFSH10120A FFSH10120A TO−247−2LD
(Pb-Free / Halogen Free)
30 Units / Tube
FFSH10120A
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3
TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
25
0
30
60
90
120
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.7 D = 1
IF, PEAK FORWARD CURRENT (A)
TC, CASE TEMPERATURE (oC)
200
10−3
10−2
10−1
1
10
IR, REVERSE CURRENT (mA)
VR, REVERESE VOLTAGE (V)
TJ = 175 oC
TJ = 125 oC
TJ = −55oC
TJ = 25 oC
TJ = 75 oC
Figure 1. Forward Characteristics Figure 2. Reverse Characteristics
Figure 3. Reverse Characteristics Figure 4. Current Derating
Figure 5. Power Derating Figure 6. Capacitive Charge vs. Reverse
Voltage
0
0
5
10
15
20
TJ = 175 oC
TJ = 125 oC
TJ = 75 oC
TJ = 25 oC
TJ = −55 oC
IF, FORWARD CURRENT (A)
VF, FORWARD CURRENT (V)
1234 400 600 800 1000 1200
1000
0.0
0.2
0.4
0.6
0.8
1.0
TJ = 175oC
TJ = 125 oC
TJ = 75oC
TJ = 25 oC
TJ = −55 oC
IR, REVERSE CURRENT (mA)
VR, REVERSE VOLTAGE (V)
1100 1200 1300 1400 1500 50 75 100 125 150 175
25
0
50
100
150
200
PTOT, POWER DISSIPATION (W)
TC, CASE TEMPERATURE (oC)
50 75 100 125 150 175 0
0
20
40
60
80
QC, CAPACITIVE CHARGE (nC)
VR, REVERSE VOLTAGE (V)
200 400 600 800 1000
FFSH10120A
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4
TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Figure 7. Capacitance vs. Reverse Voltage Figure 8. Capacitance Stored Energy
Figure 9. Junction-to-Case Transient Thermal Response Curve
0.1
10
100
1000
5000
CAPACITANCE (pF)
VR, REVERESE VOLTAGE (V)
1 10 100 1000 0
0
10
20
30
EC, CAPACITIVE ENERGY (mJ)
VR, REVERVE VOLTAGE (V)
200 400 600 800 1000
10−610−510−410−310−210−11
10−4
10−3
10−2
10−1
1DUTY CIRCLE−DESCENDING ORDER
SINGLE PULSE
D=0.01
D=0.02
D=0.05
D=0.1
D=0.2
D=0.5
2
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
t, RECTANGULAR PULSE DURATION (sec)
PDM
t1
t2
qJC(t) = r(t) x RqJC
RqJC = 0.78 oC/W
Duty Cycle, D = t1 / t2
Peak TJ = PDM x ZqJC(t) + TC
Z
NOTES:
XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
ZZ = Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
TO−247−2LD
CASE 340CL
ISSUE A
DATE 03 DEC 2019
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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TO−247−2LD
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