NVTFS4C25N Power MOSFET 30 V, 17 mW, 22 A, Single N-Channel, m8FL Features * * * * * * Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVTFS4C25NWF - Wettable Flanks Product NVT Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V(BR)DSS RDS(on) MAX ID MAX 17 mW @ 10 V 30 V 22 A 26.5 mW @ 4.5 V N-Channel MOSFET D (5-8) MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS 20 V ID 10.1 A Continuous Drain Current RqJA (Notes 1, 3, 5) TA = 25C Steady State Power Dissipation RqJA (Notes 1, 3, 5) Continuous Drain Current RyJC (Notes 1, 2, 4, 5) TA = 25C TC = 25C Steady State PD ID TC = 85C TA = 25C, tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy (TJ = 25C, IL = 6.7 Apk, L = 0.5 mH) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) 1 22.1 A 17.1 PD MARKING DIAGRAM W 3.0 1.8 TC = 85C TC = 25C S (1,2,3) 7.8 TA = 85C Power Dissipation RyJC (Notes 1, 2, 4, 5) Pulsed Drain Current TA = 85C G (4) 14.3 WDFN8 (m8FL) CASE 511AB 1 S S S G XXXX AYWWG G D D D D W 8.6 IDM 90 A TJ, Tstg -55 to +175 C IS 14 A EAS 11.2 mJ TL 260 C XXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The entire application environment impacts the thermal resistance values shown; they are not constants and are valid for the specific conditions noted. 2. Psi (y) is used as required per JESD51-12 for packages in which substantially less than 100% of the heat flows to a single case surface. 3. Surface-mounted on FR4 board using 650 mm2, 2 oz. Cu Pad. 4. Assumes heat-sink sufficiently large to maintain constant case temperature independent of device power. 5. Continuous DC current rating. Maximum current for pulses as long as one second is higher but dependent on pulse duration and duty cycle. (c) Semiconductor Components Industries, LLC, 2014 April, 2014 - Rev. 1 1 Publication Order Number: NVTFS4C25N/D NVTFS4C25N THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction-to-Case (Drain) (Notes 6, 7 and 9) Parameter YqJC 10.5 Junction-to-Ambient - Steady State (Notes 6 and 8) RqJA 50 Unit C/W 6. The entire application environment impacts the thermal resistance values shown; they are not constants and are valid for the specific conditions noted. 7. Psi (y) is used as required per JESD51-12 for packages in which substantially less than 100% of the heat flows to a single case surface. 8. Surface-mounted on FR4 board using 650 mm2, 2 oz. Cu Pad. 9. Assumes heat-sink sufficiently large to maintain constant case temperature independent of device power. ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate-to-Source Leakage Current IDSS V 15.3 VGS = 0 V, VDS = 24 V mV/C TJ = 25C 1.0 TJ = 125C 10 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA mA 100 nA 2.2 V ON CHARACTERISTICS (Note 10) Gate Threshold Voltage Threshold Temperature Coefficient Drain-to-Source On Resistance VGS(TH)/TJ RDS(on) 1.3 -4.5 mV/C VGS = 10 V ID = 10 A 13 17 VGS = 4.5 V ID = 9 A 21 26.5 mW Forward Transconductance gFS VDS = 1.5 V, ID = 15 A 23 S Gate Resistance RG TA = 25C 1.0 W CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 500 VGS = 0 V, f = 1 MHz, VDS = 15 V 295 Capacitance Ratio CRSS/CISS Total Gate Charge QG(TOT) 5.1 Threshold Gate Charge QG(TH) 0.9 Gate-to-Source Charge QGS Gate-to-Drain Charge QGD Gate Plateau Voltage Total Gate Charge pF 85 VGS = 0 V, VDS = 15 V, f = 1 MHz VGS = 4.5 V, VDS = 15 V; ID = 20 A 0.170 1.7 nC 2.7 VGP QG(TOT) VGS = 10 V, VDS = 15 V; ID = 20 A 3.3 V 10.3 nC SWITCHING CHARACTERISTICS (Note 11) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) 8.0 tr td(OFF) VGS = 4.5 V, VDS = 15 V, ID = 10 A, RG = 3.0 W 32 10 tf 3.0 td(ON) 4.0 tr td(OFF) VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 25 13 2.0 10. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 11. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns ns NVTFS4C25N ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max TJ = 25C 0.87 1.2 TJ = 125C 0.75 Unit DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD VGS = 0 V, IS = 10 A tRR ta tb V 18.2 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A QRR 9.8 8.4 5.7 10. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 11. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 ns nC NVTFS4C25N TYPICAL CHARACTERISTICS 40 40 4.5 V to 10 V 35 ID, DRAIN CURRENT (A) 3.8 V 25 3.6 V 20 3.4 V 15 3.2 V 10 3.0 V TJ = 25C 0 0 1 3 2 20 TJ = 25C 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics ID = 30 A 0.022 0.012 0.002 4.0 5.0 6.0 7.0 8.0 9.0 VGS, GATE-TO-SOURCE VOLTAGE (V) 10 4.5 5.0 TJ = 25C 0.045 0.035 VGS = 4.5 V 0.025 0.015 VGS = 10 V 0.005 10 20 30 40 50 ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. VGS Figure 4. On-Resistance vs. Drain Current and Gate Voltage 1.9 10000 VGS = 0 V ID = 10 A VGS = 10 V TJ = 150C 1.6 IDSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 0.5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 0.032 1.7 TJ = -55C 0 5 0.042 1.8 TJ = 125C 10 0 4 0.052 3.0 30 2.8 V RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 4.0 V 30 5 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) VDS = 5 V 4.2 V 1.5 1.4 1.3 1.2 1.1 1.0 1000 TJ = 125C 100 TJ = 85C 10 0.9 0.8 0.7 -50 1 -25 0 25 50 75 100 125 150 175 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 4 30 NVTFS4C25N TYPICAL CHARACTERISTICS VGS = 0 V TJ = 25C 700 C, CAPACITANCE (pF) VGS, GATE-TO-SOURCE VOLTAGE (V) 800 Ciss 600 500 Coss 400 300 200 Crss 100 0 0 5 10 15 20 25 10 QT 8 6 TJ = 25C VDD = 15 V VGS = 10 V ID = 20 A 2 0 30 0 4 2 6 8 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 12 20 100 VGS = 0 V IS, SOURCE CURRENT (A) 18 tr td(off) 10 td(on) tf 1 VDD = 15 V ID = 15 A VGS = 10 V 16 14 12 10 8 TJ = 25C TJ = 125C 6 4 2 0.1 1 10 0 100 0.4 0.5 0.6 0.7 0.8 0.9 RG, GATE RESISTANCE (W) VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 NVTFS4C25N FBSOA TC = 25C, VGS = 10 V ID, DRAIN CURRENT (A) t, TIME (ns) Qgd Qgs 4 10 0.01 ms 0.1 ms 1 1 ms 0.1 0.1 dc 1 10 ms 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 5 100 1.0 NVTFS4C25N TYPICAL CHARACTERISTICS 100 qJA, 650 mm2, 2 oz Cu Pad, single layer on FR4 R(t) (C/W) 10 YJC, infinite heat sink assumption @ 1% Duty Cycle @ 2% Duty Cycle @ 5% Duty Cycle @ 10% Duty Cycle @ 20% Duty Cycle @ 50 % Duty Cycle RqJA Single Pulse RYJA Single Pulse 1 0.1 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 100 1000 PULSE TIME (sec) Figure 12. Thermal Response 100 30 ID, DRAIN CURRENT (A) 25 GFS (S) 20 15 10 TJ(initial) = 25C 10 TJ(initial) = 85C 5 1 1.E-06 0 0 5 10 15 25 20 30 35 40 1.E-05 1.E-04 ID (A) PULSE WIDTH (SECONDS) Figure 13. GFS vs. ID Figure 14. Avalanche Characteristics 1.E-03 ORDERING INFORMATION Marking Package Shipping NVTFS4C25NTAG 4V25 WDFN8 (Pb-Free) 1500 / Tape & Reel NVTFS4C25NWFTAG 25WF WDFN8 (Pb-Free) 1500 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 NVTFS4C25N PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A B D1 2X 0.20 C 8 7 6 5 4X q E1 E c 1 2 3 4 A1 TOP VIEW 0.10 C A 0.10 C SIDE VIEW 0.10 8X b C A B 0.05 C 4X DETAIL A 6X C e SEATING PLANE DETAIL A 8X e/2 L 0.42 4 INCHES NOM 0.030 --- 0.012 0.008 0.130 BSC 0.116 0.120 0.078 0.083 0.130 BSC 0.116 0.120 0.058 0.063 0.009 0.012 0.026 BSC 0.012 0.016 0.026 0.032 0.012 0.017 0.002 0.005 0.055 0.059 0_ --- MIN 0.028 0.000 0.009 0.006 0.65 PITCH PACKAGE OUTLINE K MAX 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.016 0.020 0.037 0.022 0.008 0.063 12 _ 4X 0.66 M E3 8 G MILLIMETERS MIN NOM MAX 0.70 0.75 0.80 0.00 --- 0.05 0.23 0.30 0.40 0.15 0.20 0.25 3.30 BSC 2.95 3.05 3.15 1.98 2.11 2.24 3.30 BSC 2.95 3.05 3.15 1.47 1.60 1.73 0.23 0.30 0.40 0.65 BSC 0.30 0.41 0.51 0.65 0.80 0.95 0.30 0.43 0.56 0.06 0.13 0.20 1.40 1.50 1.60 0_ --- 12 _ SOLDERING FOOTPRINT* 1 E2 DIM A A1 b c D D1 D2 E E1 E2 E3 e G K L L1 M q 5 D2 BOTTOM VIEW 3.60 L1 0.75 2.30 0.57 0.47 2.37 3.46 DIMENSION: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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