Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.1
www.infineon.com 2018-04-17
IHW40N120R5
ResonantSwitchingSeries
ReverseConductingIGBTwithmonolithicbodydiode
Features:
•Powerfulmonolithicbodydiodewithlowforwardvoltage
designedforsoftcommutation
•TRENCHSTOPTMtechnologyoffering:
-verytightparameterdistribution
-highruggedness,temperaturestablebehavior
-lowVCEsat
-easyparallelswitchingcapabilityduetopositive
temperaturecoefficientinVCEsat
•LowEMI
•QualifiedaccordingtoJESD-022fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogenfree(accordingtoIEC61249-2-21)
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications:
•Inductioncooking
•Microwaveovens
G
C
E
G
C
E
KeyPerformanceandPackageParameters
Type VCE ICVCEsat,Tvj=25°C Tvjmax Marking Package
IHW40N120R5 1200V 40A 1.55V 175°C H40MR5 PG-TO247-3
Datasheet 2 V2.1
2018-04-17
IHW40N120R5
ResonantSwitchingSeries
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Datasheet 3 V2.1
2018-04-17
IHW40N120R5
ResonantSwitchingSeries
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter Symbol Value Unit
Collector-emittervoltage,Tvj≥25°C VCE 1200 V
DCcollectorcurrent,limitedbyTvjmax
Tc=25°C
Tc=100°C
IC80.0
40.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 120.0 A
Turn off safe operating area
VCE≤1200V,Tvj≤175°C,tp=1µs - 120.0 A
Diodeforwardcurrent,limitedbyTvjmax
Tc=25°C
Tc=100°C
IF80.0
40.0
A
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 120.0 A
Gate-emitter voltage
TransientGate-emittervoltage(tp≤10µs,D<0.010) VGE ±20
±25 V
PowerdissipationTc=25°C
PowerdissipationTc=100°C Ptot 394.0
197.0 W
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s 260 °C
Mounting torque, M3 screw
Maximum of mounting processes: 3 M0.6 Nm
ThermalResistance
Value
min. typ. max.
Parameter Symbol Conditions Unit
RthCharacteristics
IGBT thermal resistance,
junction - case Rth(j-c) - - 0.38 K/W
Diode thermal resistance,
junction - case Rth(j-c) - - 0.38 K/W
Thermal resistance
junction - ambient Rth(j-a) - - 40 K/W
Datasheet 4 V2.1
2018-04-17
IHW40N120R5
ResonantSwitchingSeries
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA 1200 - - V
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=40.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
-
-
-
1.55
1.80
1.90
1.85
-
-
V
Diode forward voltage VF
VGE=0V,IF=40.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
-
-
-
1.90
2.20
2.30
2.10
-
-
V
Gate-emitter threshold voltage VGE(th) IC=1.00mA,VCE=VGE 5.1 5.8 6.4 V
Zero gate voltage collector current ICES
VCE=1200V,VGE=0V
Tvj=25°C
Tvj=175°C
-
-
-
800
100
-
µA
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=40.0A - 30.0 - S
Integrated gate resistor rGnone Ω
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
DynamicCharacteristic
Input capacitance Cies - 2370 -
Output capacitance Coes - 70 -
Reverse transfer capacitance Cres - 60 -
VCE=25V,VGE=0V,f=1MHz pF
Gate charge QGVCC=960V,IC=40.0A,
VGE=15V - 310.0 - nC
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE- 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=25°C
Turn-off delay time td(off) - 420 - ns
Fall time tf- 20 - ns
Turn-off energy Eoff - 1.60 - mJ
Tvj=25°C,
VCC=600V,IC=40.0A,
VGE=0.0/15.0V,
RG(on)=10.0Ω,RG(off)=10.0Ω,
Lσ=175nH,Cσ=40pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Turn-off energy, soft switching Eoff dv/dt=200.0V/µs - 0.22 - mJ
Datasheet 5 V2.1
2018-04-17
IHW40N120R5
ResonantSwitchingSeries
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=175°C
Turn-off delay time td(off) - 490 - ns
Fall time tf- 90 - ns
Turn-off energy Eoff - 2.90 - mJ
Tvj=175°C,
VCC=600V,IC=40.0A,
VGE=0.0/15.0V,
RG(on)=10.0Ω,RG(off)=10.0Ω,
Lσ=175nH,Cσ=40pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Turn-off energy, soft switching Eoff dv/dt=200.0V/µs - 0.57 - mJ
Datasheet 6 V2.1
2018-04-17
IHW40N120R5
ResonantSwitchingSeries
Figure 1. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tvj≤175°C;VGE=15V;tp=1µs)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
1 10 100 1000
0.1
1
10
100
not for linear use
Figure 2. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
TC,CASETEMPERATURE[°C]
Ptot,POWERDISSIPATION[W]
25 50 75 100 125 150 175
0
40
80
120
160
200
240
280
320
360
400
Figure 3. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tvj≤175°C)
TC,CASETEMPERATURE[°C]
IC,COLLECTORCURRENT[A]
25 50 75 100 125 150 175
0
20
40
60
80
Figure 4. Typicaloutputcharacteristic
(Tvj=25°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
012345
0
20
40
60
80
100
120
VGE = 20V
17V
15V
13V
11V
9V
8V
7V
5V
Datasheet 7 V2.1
2018-04-17
IHW40N120R5
ResonantSwitchingSeries
Figure 5. Typicaloutputcharacteristic
(Tvj=175°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
012345
0
20
40
60
80
100
120
VGE = 20V
17V
15V
13V
11V
9V
8V
7V
5V
Figure 6. Typicaltransfercharacteristic
(VCE=20V)
VGE,GATE-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
0 2 4 6 8 10 12 14
0
20
40
60
80
100
120
Tvj = 25°C
Tvj =175°C
Figure 7. Typicalcollector-emittersaturationvoltageas
afunctionofjunctiontemperature
(VGE=15V)
Tvj,JUNCTIONTEMPERATURE[°C]
VCEsat,COLLECTOR-EMITTERSATURATION[V]
25 50 75 100 125 150 175
1.0
1.5
2.0
2.5
3.0
IC = 20A
IC = 40A
IC = 80A
Figure 8. Typicalswitchingtimesasafunctionof
collectorcurrent
(inductiveload,Tvj=175°C,VCE=600V,
VGE=0/15V,rG=10Ω,Dynamictestcircuitin
Figure E)
IC,COLLECTORCURRENT[A]
t,SWITCHINGTIMES[ns]
0 10 20 30 40 50 60 70 80
10
100
1000
td(off)
tf
Datasheet 8 V2.1
2018-04-17
IHW40N120R5
ResonantSwitchingSeries
Figure 9. Typicalswitchingtimesasafunctionofgate
resistor
(inductiveload,Tvj=175°C,VCE=600V,
VGE=0/15V,IC=40A,Dynamictestcircuitin
Figure E)
rG,GATERESISTOR[Ω]
t,SWITCHINGTIMES[ns]
0 10 20 30 40 50
10
100
1000
1E+4
td(off)
tf
Figure 10. Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=600V,VGE=0/15V,
IC=40A,rG=10Ω,Dynamictestcircuitin
Figure E)
Tvj,JUNCTIONTEMPERATURE[°C]
t,SWITCHINGTIMES[ns]
25 50 75 100 125 150 175
10
100
1000
td(off)
tf
Figure 11. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=1mA)
Tvj,JUNCTIONTEMPERATURE[°C]
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
25 50 75 100 125 150 175
3.0
3.8
4.6
5.4
6.2
7.0
typ.
min.
max.
Figure 12. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(inductiveload,Tvj=175°C,VCE=600V,
VGE=0/15V,rG=10Ω,Dynamictestcircuitin
Figure E)
IC,COLLECTORCURRENT[A]
E,SWITCHINGENERGYLOSSES[mJ]
0 10 20 30 40 50 60 70 80
0
1
2
3
4
5
6
7
Eoff
Datasheet 9 V2.1
2018-04-17
IHW40N120R5
ResonantSwitchingSeries
Figure 13. Typicalswitchingenergylossesasa
functionofgateresistor
(inductiveload,Tvj=175°C,VCE=600V,
VGE=0/15V,IC=40A,Dynamictestcircuitin
Figure E)
rG,GATERESISTOR[Ω]
E,SWITCHINGENERGYLOSSES[mJ]
0 10 20 30 40 50
2.5
2.9
3.3
3.7
4.1
4.5
Eoff
Figure 14. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=600V,VGE=0/15V,
IC=40A,rG=10Ω,Dynamictestcircuitin
Figure E)
Tvj,JUNCTIONTEMPERATURE[°C]
E,SWITCHINGENERGYLOSSES[mJ]
25 50 75 100 125 150 175
1.5
1.8
2.1
2.4
2.7
3.0
Eoff
Figure 15. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=175°C,VGE=0/15V,
IC=40A,rG=10Ω,Dynamictestcircuitin
Figure E)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
E,SWITCHINGENERGYLOSSES[mJ]
400 450 500 550 600 650 700 750 800
2.0
2.5
3.0
3.5
Eoff
Figure 16. Typicalturnoffswitchingenergylossfor
softswitching
(inductiveload,VCE=600V,VGE=0/15V,
RG=10Ω,DynamictestcircuitinFigureE)
IC,COLLECTORCURRENT[A]
E,SWITCHINGENERGYLOSSES[mJ]
0 10 20 30 40 50 60 70 80
0.00
0.25
0.50
0.75
1.00
1.25
1.50
Tvj = 25°C
Tvj = 175°C
Datasheet 10 V2.1
2018-04-17
IHW40N120R5
ResonantSwitchingSeries
Figure 17. Typicalgatecharge
(IC=40A)
QGE,GATECHARGE[nC]
VGE,GATE-EMITTERVOLTAGE[V]
0 40 80 120 160 200 240 280 320
0
2
4
6
8
10
12
14
16
VCC=240V
VCC=960V
Figure 18. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
C,CAPACITANCE[pF]
0 5 10 15 20 25 30
10
100
1000
1E+4
Cies
Coes
Cres
Figure 19. IGBTtransientthermalresistance
(D=tp/T)
tp,PULSEWIDTH[s]
Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W]
1E-5 1E-4 0.001 0.01 0.1 1
0.001
0.01
0.1
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
single pulse
Figure 20. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
tp,PULSEWIDTH[s]
Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W]
1E-5 1E-4 0.001 0.01 0.1 1
0.001
0.01
0.1
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
single pulse
Datasheet 11 V2.1
2018-04-17
IHW40N120R5
ResonantSwitchingSeries
Figure 21. Typicaldiodeforwardcurrentasafunction
offorwardvoltage
VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]
012345
0
20
40
60
80
100
120
Tvj = 25°C
Tvj = 175°C
Figure 22. Typicaldiodeforwardvoltageasafunction
ofjunctiontemperature
Tvj,JUNCTIONTEMPERATURE[°C]
VF,FORWARDVOLTAGE[V]
25 50 75 100 125 150 175
1.0
1.5
2.0
2.5
3.0
3.5
4.0
IF = 20A
IF = 40A
IF = 80A
Datasheet 12 V2.1
2018-04-17
IHW40N120R5
ResonantSwitchingSeries
Package Drawing PG-TO247-3
Datasheet 13 V2.1
2018-04-17
IHW40N120R5
ResonantSwitchingSeries
t
ab
td(off) tftr
td(on)
90% IC
10% IC
90% IC
10% VGE
10% IC
t
90% VGE
t
t
90% VGE
VGE(t)
t
t
t
t1t4
2% IC
10% VGE
2% VCE
t2t3
E
t
t
V I t
off = x x d
1
2
CE C
E
t
t
V I t
on = x x d
3
4
CE C
CC
dI /dt
F
dI
I,V
Figure A.
Figure B.
Figure C. Definition of diode switching
characteristics
Figure E. Dynamic test circuit
Figure D.
I (t)
C
Parasitic inductance L ,
parasitic capacitor C ,
relief capacitor C ,
(only for ZVT switching)
s
s
r
t t t
Q Q Q
rr a b
rr a b
= +
= +
QaQb
V (t)
CE
VGE(t)
I (t)
C
V (t)
CE
Testing Conditions
Datasheet 14 V2.1
2018-04-17
IHW40N120R5
ResonantSwitchingSeries
RevisionHistory
IHW40N120R5
Revision:2018-04-17,Rev.2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
2.1 2018-04-17 Final Datasheet
Trademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
Publishedby
InfineonTechnologiesAG
81726München,Germany
©InfineonTechnologiesAG2018.
AllRightsReserved.
ImportantNotice
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics
(“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany
informationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesand
liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird
party.
Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis
documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseof
theproductofInfineonTechnologiesincustomer’sapplications.
Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityof
customer’stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe
completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication.
Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest
InfineonTechnologiesoffice(www.infineon.com).
PleasenotethatthisproductisnotqualifiedaccordingtotheAECQ100orAECQ101documentsoftheAutomotive
ElectronicsCouncil.
Warnings
Duetotechnicalrequirementsproductsmaycontaindangeroussubstances.Forinformationonthetypesinquestion
pleasecontactyournearestInfineonTechnologiesoffice.
ExceptasotherwiseexplicitlyapprovedbyInfineonTechnologiesinawrittendocumentsignedbyauthorized
representativesofInfineonTechnologies,InfineonTechnologies’productsmaynotbeusedinanyapplicationswherea
failureoftheproductoranyconsequencesoftheusethereofcanreasonablybeexpectedtoresultinpersonalinjury.