BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie 3 Cascadable 50 -gain block 4 Unconditionally stable Gain |S21|2 = 18.5 dB at 1.8 GHz (Appl.1) gain |S21|2 = 22 dB at 1.8 GHz (Appl.2) 2 IP3out = +7 dBm at 1.8 GHz (VD =3V, ID =9.4mA) 1 Noise figure NF = 2.2 dB at 1.8 GHz Typical device voltage VD = 2 V to 5 V VPS05605 3 +V Reverse isolation 35 dB (Appl.2) 4 OUT Circuit Diagram IN 1 2 GND EHA07378 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BGA427 BMs Pin Configuration 1, IN 2, GND 3, +V Package 4, Out SOT343 Maximum Ratings Parameter Symbol Device current Value Unit ID 25 mA Device voltage VD,+V 6 V Total power dissipation Ptot 150 mW -10 dBm Junction temperature PRFin Tj 150 C Ambient temperature range TA -65 ... 150 Storage temperature range Tstg -65 ... 150 TS = 120 C RF input power Thermal Resistance Junction - soldering point1) RthJS 295 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Aug-02-2001 BGA427 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol Values min. AC characteristics VD = 3 V, Zo = 50, Testfixture Appl.1 Insertion power gain |S21|2 f = 0.1 GHz f = 1 GHz f = 1.8 GHz typ. Unit max. dB - 27 22 18.5 22 - - 1.9 2 2.2 - Reverse isolation f = 1.8 GHz Noise figure f = 0.1 GHz f = 1 GHz f = 1.8 GHz S12 Intercept point at the output f = 1.8 GHz Return loss input f = 1.8 GHz Return loss output f = 1.8 GHz IP3out - +7 - dBm RLin - >12 - dB RLout - >9 - NF Typical configuration Appl.2 Appl.1 +V +V 100 pF RF OUT 1 nF 10 nF 100 nH 2.2 pF BGA 427 100 pF 100 pF 100 pF RF IN RF OUT GND EHA07379 BGA 427 100 pF RF IN GND EHA07380 Note: 1) Large-value capacitors should be connected from pin 3 to ground right at the device to provide a low impedance path (appl.1). 2) The use of plated through holes right at pin 2 is essential for pc-board-applications. Thin boards are recommended to minimize the parasitic inductance to ground. 2 Aug-02-2001 BGA427 S-Parameters at TA = 25 C, (Testfixture, Appl.1) f S11 GHz MAG S21 ANG VD = 3V, Zo = 50 0.1 0.1382 -38.3 0.2 0.1179 -16 0.5 0.1697 -20.8 0.8 0.1824 -56.9 0.9 0.1782 -69.1 1 0.176 -80.6 1.5 0.1827 -133.5 1.8 0.1969 -156.1 1.9 0.2021 -162.8 2 0.2116 -167.7 2.5 0.2437 172.8 3 0.258 153.3 S12 S22 MAG ANG MAG ANG MAG ANG 24.821 24.606 22.236 18.258 17.152 15.786 10.923 9.029 8.486 8.015 6.259 5.103 164.9 158.9 135.2 115.4 109.4 104 84.9 77 74.7 72.3 63 55 0.0022 0.0046 0.0104 0.0169 0.0194 0.0225 0.0385 0.0479 0.0517 0.0549 0.0709 0.0892 50.7 71.8 83.8 94.8 97.3 98.3 99.7 99.3 98.9 98.8 97.1 96.9 0.6435 0.6278 0.54 0.4453 0.4326 0.4129 0.3852 0.3917 0.3946 0.3991 0.4202 0.4477 174.8 166.9 147.3 140.2 139.4 138.1 139.6 139.3 138.8 138.3 134.6 131 Spice-model BGA 427 +V BGA 427-chip including parasitics 13 R2 T2 R1 IN R3 C'-E'Diode 14 C1 11 C P3 T1 C P1 C P4 C P5 R4 C P2 12 GND EHA07381 3 OUT T1 T2 R1 R2 R3 R4 C1 CP1 CP2 CP3 CP4 T501 T501 14.5k 280 2.4k 170 2.3pF 0.2pF 0.2pF 0.6pF 0.1pF 0.1pF CP5 C'-E'-diode T1 Aug-02-2001 BGA427 Transistor Chip Data T1 (Berkley-SPICE 2G.6 Syntax) : IS = 0.21024 fA BF = 83.23 - NF = 1.0405 - VAF = 39.251 V IKF = 0.16493 A ISE = 15.761 fA NE = 1.7763 - BR = 10.526 - NR = 0.96647 - VAR = 34.368 V IKR = 0.25052 A ISC = 0.037223 fA NC = 1.3152 - RB = 15 IRB = 0.21215 A RBM = 1.3491 RE = 1.9289 RC = 0.12691 CJE = 3.7265 fF VJE = 0.70367 V MJE = 0.37747 - TF = 4.5899 ps XTF = 0.3641 - VTF = 0.19762 V ITF = 1.3364 mA PTF = 0 deg CJC = 96.941 fF VJC = 0.99532 V MJC = 0.48652 - XCJC = 0.08161 - TR = 1.4935 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.99469 - TNOM 300 K - RS = 20 LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = C1 = C2 = C3 = L1 = L2 = 0.36 0.4 0.3 0.15 0.36 0.4 95 6 132 28 88 8 0.6 0.4 nH nH nH nH nH nH fF fF fF fF fF fF nH nH C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) : IS = 2 fA N= 1.02 All parameters are ready to use, no scaling is necessary Package Equivalent Circuit: L2 OUT C1 C3 L1 C CB C2 14 L BO L BI IN 11 BGA 427 Chip 12 C BE 13 L CI L CO +V C'-E'Diode C CE L EI L EO GND EHA07382 Valid up to 3GHz Extracted on behalf of Infineon Technologies AG by: Institut fur Mobil-und Satellitentechnik (IMST) For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 4 Aug-02-2001 BGA427 Insertion power gain |S21|2 = f (f) Noise figure NF = f (f) VD, ID = parameter VD,ID = parameter 5.0 35 VD=5V, ID=17.5mA VD=4V, ID=13.3mA VD=3V, ID=9.5mA VD=2V, ID=5.2mA dB 4.0 25 VD=5V, ID=17.5mA VD=3V, ID=9.5mA 3.5 NF |S 21|2 dB 20 3.0 2.5 15 2.0 1.5 10 1.0 5 0.5 0 -1 10 10 0 GHz 10 0.0 -1 10 1 f 10 0 GHz 10 1 f Intercept point at the output IP3out = f (f) VD,ID = parameter 25 IP3out dBm VD=5V, ID=17.5mA VD=4V, ID=13.3mA VD=3V, ID=9.5mA VD=2V, ID=5.2mA 15 10 5 0 -1 10 10 0 GHz 10 1 f 5 Aug-02-2001