BGA427
Aug-02-20011
in SIEGET 25-Technologie
Si-MMIC-Amplifie
r
VPS05605
4
2
1
3
Cascadable 50
-gain block
Unconditionally stable
Gain |S21|2 = 18.5 dB at 1.8 GHz (Appl.1)
gain |S21|2 = 22 dB at 1.8 GHz (Appl.2)
IP3out = +7 dBm at 1.8 GHz (VD=3V, ID=9.4mA)
Noise figure NF = 2.2 dB at 1.8 GHz
Typical device voltage VD = 2 V to 5 V
Reverse isolation
35 dB (Appl.2)
EHA07378
V
2
1
IN
OUT
+
4
3
GND
Circuit Diagram
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BGA427 BMs 1, IN 2, GND 3, +V 4, Out SOT343
Maximum Ratings
Parameter Symbol Value Unit
Device current ID25 mA
Device voltage VD,+V 6 V
Total power dissipation
TS = 120 °C
Ptot 150 mW
RF input power PRFin -10 dBm
Junction temperature Tj150 °C
Ambient temperature range TA-65 ... 150
Storage temperature range Tstg -65 ... 150
Thermal Resistance
Junction - soldering point1) RthJS
295 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
BGA427
Aug-02-20012
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Parameter Symbol UnitValues
typ. max.min.
AC characteristics VD = 3 V, Zo = 50
, Testfixture Appl.1
|S21|2
-
-
-
Insertion power gain
f = 0.1 GHz
f = 1 GHz
f = 1.8 GHz
27
22
18.5
-
-
-
dB
Reverse isolation
f = 1.8 GHz S12 - 22 -
Noise figure
f = 0.1 GHz
f = 1 GHz
f = 1.8 GHz
-
-
-
-
-
-
1.9
2
2.2
NF
Intercept point at the output
f = 1.8 GHz IP3out -+ 7 - dBm
Return loss input
f = 1.8 GHz RLin - >12 - dB
Return loss output
f = 1.8 GHz RLout - >9 -
Typical configuration
Appl.2
Appl.1
EHA07379
100 pF
100 pF
1 nF
RF OUT
RF IN GND
+V
BGA 427
EHA07380
2.2 pF
100 pF
RF IN
100 pF
GND
RF OUT
100 nH
10 nF 100 pF
+V
BGA 427
Note: 1) Large-value capacitors should be connected from pin 3 to ground right at the device
to provide a low impedance path (appl.1).
2) The use of plated through holes right at pin 2 is essential for pc-board-applications. Thin
boards are recommended to minimize the parasitic inductance to ground.
BGA427
Aug-02-20013
S-Parameters at TA = 25 °C, (Testfixture, Appl.1)
fS11 S21 S12 S22
GHz MAG ANG MAG ANG MAG ANG MAG ANG
VD = 3V, Zo = 50
0.0022
0.0046
0.0104
0.0169
0.0194
0.0225
0.0385
0.0479
0.0517
0.0549
0.0709
0.0892
50.7
71.8
83.8
94.8
97.3
98.3
99.7
99.3
98.9
98.8
97.1
96.9
0.1
0.2
0.5
0.8
0.9
1
1.5
1.8
1.9
2
2.5
3
-38.3
-16
-20.8
-56.9
-69.1
-80.6
-133.5
-156.1
-162.8
-167.7
172.8
153.3
164.9
158.9
135.2
115.4
109.4
104
84.9
77
74.7
72.3
63
55
24.821
24.606
22.236
18.258
17.152
15.786
10.923
9.029
8.486
8.015
6.259
5.103
0.1382
0.1179
0.1697
0.1824
0.1782
0.176
0.1827
0.1969
0.2021
0.2116
0.2437
0.258
0.6435
0.6278
0.54
0.4453
0.4326
0.4129
0.3852
0.3917
0.3946
0.3991
0.4202
0.4477
174.8
166.9
147.3
140.2
139.4
138.1
139.6
139.3
138.8
138.3
134.6
131
Spice-model BGA 427
EHA07381
3
RR
1
P1
C
P2
C
1
C
R
2
P3
CC
P4 P5
CR
4
11
14
13
T2
12
C’-E’-
including parasitics
Diode OUT
BGA 427-chip
IN
GND
+V
T1
T1 T501
T2 T501
R114.5k
R2280
R32.4k
R4170
C12.3pF
CP1 0.2pF
0.2pF
CP2
CP3 0.6pF
CP4 0.1pF
CP5 0.1pF
C'-E'-diode T1
BGA427
Aug-02-20014
Transistor Chip Data T1 (Berkley-SPICE 2G.6 Syntax) :
IS = 0.21024 fA
V39.251VAF =
NE = 1.7763 -
VVAR = 34.368
NC = 1.3152 -
RBM = 1.3491
CJE = 3.7265 fF
ps4.5899TF =
ITF = 1.3364 mA
V0.99532VJC =
TR = 1.4935 ns
-MJS = 0
XTI = 3 -
NF = 1.0405 -
ISE = fA15.761
0.96647 -
NR =
ISC = 0.037223 fA
0.21215 AIRB =
RC =
0.12691
0.37747 -
MJE =
VTF = V0.19762
96.941 fF
CJC =
XCJC = 0.08161 -
0.75 VVJS =
EG = 1.11 eV
300 KTNOM
BF = 83.23 -
A0.16493IKF =
BR = 10.526 -
AIKR = 0.25052
RB = 15
RE = 1.9289
VJE = 0.70367 V
-XTF = 0.3641
PTF = 0 deg
-0.48652MJC =
CJS = 0fF
-XTB = 0
FC = 0.99469 -
C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) :
RS = 20
IS = 2 fA -1.02N =
All parameters are ready to use, no scaling is necessary
Package Equivalent Circuit:
LBI = 0.36 nH
LBO = 0.4 nH
LEI = 0.3 nH
LEO = 0.15 nH
LCI = 0.36 nH
LCO = 0.4 nH
CBE = 95 fF
CCB = 6fF
CCE = 132 fF
C1 =28 fF
C2 =88 fF
C3 = 8 fF
L1 = 0.6 nH
L
2
= 0.4 nH
EHA07382
L
BI
1
C
BE
C
BO
L
EI
L
L
EO
CB
C
CI
L
C
3
CO
L
CE
C
Chip
11 13
12 C’-E’-
IN
Diode
C
2
2
LOUT
L
1
14
+V
GND
BGA 427
Valid up to 3GHz
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
For examples and ready to use parameters please contact your local Infineon Technologies distributor
or sales office to obtain a Infineon Technologies CD-ROM or see Internet:
http://www.infineon.com/silicondiscretes
BGA427
Aug-02-20015
Insertion power gain |S21|2 = f (f)
VD, ID = parameter
10 -1 10 0 10 1
GHz
f
0
5
10
15
20
25
dB
35
|S21|2
VD=5V, ID=17.5mA
VD=4V, ID=13.3mA
VD=3V, ID=9.5mA
VD=2V, ID=5.2mA
Noise figure NF = f (f)
VD,ID = parameter
10 -1 10 0 10 1
GHz
f
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
dB
5.0
NF
VD=5V, ID=17.5mA
VD=3V, ID=9.5mA
Intercept point at the output
IP3out = f (f)
VD,ID = parameter
10 -1 10 0 10 1
GHz
f
0
5
10
15
dBm
25
IP3out
VD=5V, ID=17.5mA
VD=4V, ID=13.3mA
VD=3V, ID=9.5mA
VD=2V, ID=5.2mA
