(R) FQB15P12 / FQI15P12 120V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. * * * * * * * -15A, -120V, RDS(on) = 0.2 @VGS = -10 V Low gate charge ( typical 29 nC) Low Crss ( typical 110 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175C maximum junction temperature rating S ! D G! G S I2-PAK D2-PAK FQB Series G D S FQI Series ! D Absolute Maximum Ratings Symbol VDSS ID TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current FQB15P12 / FQI15P12 -120 Units V -15 A - Continuous (TC = 100C) IDM Drain Current - Pulsed -10.6 A (Note 1) -60 A VGSS Gate-Source Voltage 30 V EAS Single Pulsed Avalanche Energy (Note 2) 1157 mJ IAR Avalanche Current (Note 1) -15 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25C) * (Note 1) 10 -5.0 3.75 mJ V/ns W 100 0.67 -55 to +175 W W/C C 300 C dv/dt PD TJ, TSTG TL (Note 3) Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RJC Parameter Thermal Resistance, Junction-to-Case Typ -- Max 1.5 Units C/W RJA Thermal Resistance, Junction-to-Ambient * -- 40 C/W RJA Thermal Resistance, Junction-to-Ambient -- 62.5 C/W * When mounted on the minimum pad size recommended (PCB Mount) (c)2003 Fairchild Semiconductor Corporation Rev. A, December 2003 FQB15P12 / FQI15P12 QFET Symbol TC = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units -120 -- -- V -- -0.13 -- V/C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = -250 A, Referenced to 25C IDSS IGSSF IGSSR VDS = -120 V, VGS = 0 V -- -- -1 A VDS = -96 V, TC = 150C -- -- -10 A Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 A -2.0 -- -4.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -7.5 A -- 0.17 0.2 gFS Forward Transconductance VDS = -40 V, ID = -7.5 A -- 9.5 -- S -- 850 1100 pF -- 310 400 pF -- 110 140 pF ns (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -60 V, ID = -15 A, RG = 25 (Note 4, 5) VDS = -96 V, ID = -15 A, VGS = -10 V (Note 4, 5) -- 15 40 -- 100 210 ns -- 80 170 ns -- 80 170 ns -- 29 38 nC -- 5.1 -- nC -- 15 -- nC A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -15 ISM -- -- -60 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -15 A Drain-Source Diode Forward Voltage -- -- -4.0 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -15 A, dIF / dt = 100 A/s (Note 4) -- 126 -- ns -- 0.61 -- C Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 6.0mH, IAS = -15.0A, VDD = -50V, RG = 25 , Starting TJ = 25C 3. ISD -15A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2003 Fairchild Semiconductor Corporation Rev. A, December 2003 FQB15P12 / FQI15P12 Electrical Characteristics FQB15P12 / FQI15P12 Typical Characteristics 2 2 10 10 VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.0 V -5.5 V -5.0 V Bottom : -4.5 V 1 10 1 -I D, Drain Current [A] -ID, Drain Current [A] Top : 0 10 10 o 175 C o 25 C 0 10 o -55 C Notes : 1. VDS = -40V 2. 250 s Pulse Test Notes : 1. 250 s Pulse Test 2. TC = 25 -1 10 -1 -1 0 10 10 1 10 10 2 4 6 8 10 -VGS, Gate-Source Voltage [V] -VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1.0 0.9 -I DR , Reverse Drain Current [A] RDS(ON) [ ], Drain-Source On-Resistance 0.8 0.7 VGS = -10V 0.6 0.5 0.4 VGS = -20V 0.3 0.2 0.1 Note : TJ = 25 1 10 175 25 0 10 Notes : 1. VGS = 0V 2. 250 s Pulse Test -1 0.0 0 20 40 10 60 0.0 0.5 1.0 -ID, Drain Current [A] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2.0 2.5 3.0 3.5 4.0 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 12 2200 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Coss 2000 1800 VDS = -30V 10 1400 Notes ; 1. VGS = 0 V 2. f = 1 MHz 1200 1000 Crss 800 600 400 200 0 -1 10 -V GS , Gate-Source Voltage [V] Ciss 1600 Capacitance [pF] 1.5 -VSD, Source-Drain voltage [V] VDS = -60V VDS = -96V 8 6 4 2 Note : ID = -15A 0 0 10 1 10 -VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics (c)2003 Fairchild Semiconductor Corporation 0 10 20 30 40 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics Rev. A, December 2003 FQB15P12 / FQI15P12 Typical Characteristics (Continued) 3.0 1.2 -BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 RDS(ON) , (Normalized) Drain-Source On-Resistance 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = -250 A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 Notes : 1. VGS = -10 V 2. ID = -7.5 A 0.5 0.0 -100 200 -50 o 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 20 Operation in This Area is Limited by R DS(on) 2 10 15 -I D, Drain Current [A] -I D, Drain Current [A] 100 s 1 ms 10 ms 1 10 DC 0 10 Notes : 10 5 o 1. TC = 25 C o 2. TJ = 175 C 3. Single Pulse -1 10 0 1 10 0 25 2 10 10 50 -VDS, Drain-Source Voltage [V] 150 175 D = 0 .5 N o te s : 1 . Z J C( t) = 1 .5 /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C( t) 0 .1 -1 0 .0 5 0 .0 2 0 .0 1 PDM s in g le p u ls e t1 Z 10 125 Figure 10. Maximum Drain Current vs. Case Temperature 0 .2 10 100 0 JC ( t) , T h e r m a l R e s p o n s e Figure 9. Maximum Safe Operating Area 10 75 TC, Case Temperature [] t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve (c)2003 Fairchild Semiconductor Corporation Rev. A, December 2003 FQB15P12 / FQI15P12 Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50K Qg 200nF 12V -10V 300nF VDS VGS Qgs Qgd DUT -3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL t on VDD VGS RG td(on) VGS t off tr td(off) tf 10% DUT -10V VDS 90% Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS tp ID RG VDD DUT -10V tp (c)2003 Fairchild Semiconductor Corporation VDD Time VDS (t) ID (t) IAS BVDSS Rev. A, December 2003 FQB15P12 / FQI15P12 Peak Diode Recovery dv/dt Test Circuit & Waveforms + VDS DUT _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Compliment of DUT (N-Channel) VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V Body Diode Reverse Current IRM di/dt IFM , Body Diode Forward Current VDS ( DUT ) VSD Body Diode Forward Voltage Drop VDD Body Diode Recovery dv/dt (c)2003 Fairchild Semiconductor Corporation Rev. A, December 2003 FQB15P12 / FQI15P12 Package Dimensions 4.50 0.20 9.90 0.20 +0.10 2.00 0.10 2.54 TYP (0.75) ~3 0 0.80 0.10 1.27 0.10 2.54 0.30 15.30 0.30 0.10 0.15 2.40 0.20 4.90 0.20 1.40 0.20 9.20 0.20 1.30 -0.05 1.20 0.20 (0.40) D2-PAK +0.10 0.50 -0.05 2.54 TYP 9.20 0.20 (2XR0.45) 4.90 0.20 15.30 0.30 10.00 0.20 (7.20) (1.75) 10.00 0.20 (8.00) (4.40) 0.80 0.10 Dimensions in Millimeters (c)2003 Fairchild Semiconductor Corporation Rev. A, December 2003 (Continued) I2-PAK 4.50 0.20 (0.40) 9.90 0.20 +0.10 MAX13.40 9.20 0.20 (1.46) 1.20 0.20 1.30 -0.05 0.80 0.10 2.54 TYP 2.54 TYP 10.08 0.20 1.47 0.10 MAX 3.00 (0.94) 13.08 0.20 ) 5 (4 1.27 0.10 +0.10 0.50 -0.05 2.40 0.20 10.00 0.20 Dimensions in Millimeters (c)2003 Fairchild Semiconductor Corporation Rev. A, December 2003 FQB15P12 / FQI15P12 Package Dimensions TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACT Quiet SeriesTM ActiveArrayTM FAST(R) FASTrTM BottomlessTM FRFETTM CoolFETTM CROSSVOLTTM GlobalOptoisolatorTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM EnSignaTM ImpliedDisconnectTM FACTTM ISOPLANARTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2003 Fairchild Semiconductor Corporation Rev. I6