FQB15P12TM - Fairchild Semiconductor

FQB15P12 / FQI15P12

QFET®

FQB15P12 / FQI15P12

120V P-Channel MOSFET

General Description

These P-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for low voltage applications such as audio amplifier,

high efficiency switching DC/DC converters, and DC motor

control.

Features

• -15A, -120V, RDS(on) = 0.2Ω @VGS = -10 V

• Low gate charge ( typical 29 nC)

• Low Crss ( typical 110 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Thermal Characteristics

* When mounted on the minimum pad size recommended (PCB Mount)

Symbol Parameter FQB15P12 / FQI15P12 Units

VDSS Drain-Source Voltage -120 V

IDDrain Current - Continuous (TC = 25°C) -15 A

- Continuous (TC = 100°C) -10.6 A

IDM Drain Current - Pulsed (Note 1) -60 A

VGSS Gate-Source Voltage ± 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 1157 mJ

IAR Avalanche Current (Note 1) -15 A

EAR Repetitive Avalanche Energy (Note 1) 10 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) -5.0 V/ns

PDPower Dissipation (TA = 25°C) * 3.75 W

Power Dissipation (TC = 25°C) 100 W

- Derate above 25°C 0.67 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C

TLMaximum lead temperature for soldering purposes,

1/8" from case for 5 seconds 300 °C

Symbol Parameter Typ Max Units

RθJC Thermal Resistance, Junction-to-Case -- 1.5 °C/W

RθJA Thermal Resistance, Junction-to-Ambient * -- 40 °C/W

RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

D2-PAK

FQB Series

I2-PAK

FQI Series

GSD

FQB15P12 / FQI15P12

Electrical Characteristics TC = 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 6.0mH, IAS = -15.0A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ -15A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Symbol Parame ter Test Condit ions Min Typ Max Unit s

Off Characteristics

BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = -250 µA-120 -- -- V

∆BVDSS

/ ∆TJ

Breakdown Voltage Temperature

Coefficient ID = -250 µA, Referenced to 25°C -- -0.13 -- V/°C

IDSS Zero Gate Voltage Drain Current VDS = -120 V, VGS = 0 V -- -- -1 µA

VDS = -96 V, TC = 150°C -- -- -10 µA

IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA

On Characteri st ics

VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA-2.0 -- -4.0 V

RDS(on) Static Drain-Source

On-Resistance VGS = -10 V, ID = -7.5 A -- 0.17 0.2 Ω

gFS Forward Transconduct ance VDS = -40 V, ID = -7.5 A (Note 4) -- 9.5 -- S

Dynamic Characteristics

Ciss Input Capacitance VDS = -25 V, VGS = 0 V,

f = 1.0 MHz

-- 850 1100 pF

Coss Output Capacitance -- 310 400 pF

Crss Reverse Transfer Capacitance -- 110 140 pF

Switching Characteristics

td(on) Turn-On Delay Time VDD = -60 V, ID = -15 A,

RG = 25 Ω

(Note 4, 5)

-- 15 40 ns

trTurn-On Rise Time -- 100 210 ns

td(off) Turn-Off D e l a y Time -- 80 170 ns

tfTur n -Off Fall Time -- 8 0 170 ns

QgTotal Gate Ch arge VDS = -96 V, ID = -15 A,

VGS = -10 V

(Note 4, 5)

-- 29 38 nC

Qgs Gate-Source Charge -- 5.1 -- nC

Qgd Gate-Drain Charge -- 15 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

ISMaximum Continuous Drain-Source Diode Forward Current -- -- -15 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -60 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, I S = -15 A -- -- -4.0 V

trr Reverse Recovery Time VGS = 0 V, I S = -15 A,

dIF / dt = 100 A/µs (Note 4)

-- 126 -- ns

Qrr Reverse Recovery Charge -- 0.61 -- µC

FQB15P12 / FQI15P12

Typical Characteristics

Figure 5. C apacitance C haracterist i cs Figure 6. Ga te Ch arge Chara ct eri stics

10-1 100101

10-1

100

101

102 VGS

Top : -15.0 V

-1 0.0 V

-8.0 V

-7.0 V

-6.0 V

-5.5 V

-5.0 V

Bottom : -4.5 V

$ Notes :

1. 250%s Pu lse Tes t

2 . TC = 25&

-ID, Drain Current [A]

-VDS, D ra in-S o u rc e Vo lta g e [V]

246810

10-1

100

101

102

175oC

25oC

-55oC

$ N o te s :

1. V DS = -40V

2. 25 0 %s Pu lse Test

-ID, Drain C urrent [A]

-VGS, Gate-Source Voltage [V ]

0 204060

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

VGS = -20V

VGS = -10V

$ N ote : TJ = 25&

RDS(ON) ['],

Drain-Source O n-Resistance

-ID, Dra in Cu rrent [A ] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

10-1

100

101

175&

$ No tes :

1. V GS = 0V

2. 250%s Pulse Test

25&

-IDR , Rev erse Drain Current [A]

-VSD, So urce-D rain v oltage [V]

10-1 100101

200

400

600

800

1000

1200

1400

1600

1800

2000

2200 Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + C gd

Crss = C gd

$ No tes ;

1 . VGS = 0 V

2 . f = 1 MHz

Crss

Coss

Ciss

Capacitance [pF]

-VDS, Drain-Source Voltage [V]

0 10203040

VDS = -60V

VDS = -30V

VDS = -96V

$ N o te : ID = -15A

-VGS , G a te -S o u rc e V o lta g e [V]

QG, T o ta l G a te C h a rg e [n C ]

Figu re 3. On-Resistan ce Variati on vs.

Drain Current and Gate Voltage Figure 4. Body Diode Fo rwa rd Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On- R egi on Character ist ic s

FQB15P12 / FQI15P12

10-5 10-4 10-3 10-2 10-1 100101

10-2

10-1

100

$ Note s :

1 . Z (JC

(t) = 1.5 &/W Ma x.

2 . Duty F a c to r , D =t1/t2

3 . T JM - T C = P DM * Z (JC

(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

Z(JC

(t), Therm al R esponse

t1, S q u a re W a ve P u lse Du ra tio n [se c]

Typical Characteristics (Continued)

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

Figure 11. Transient Thermal Res ponse Curve

PDM

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

$ N otes :

1 . VGS = 0 V

2 . I D = -250 %A

-BV DSS , (Normalized)

D rain-So urce B reakdown Vo ltage

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

$ Notes :

1. VGS = -10 V

2. ID = -7 .5 A

RDS(ON) , (N orm alized)

D rain-Source O n-R esistance

TJ, Junction Temperature [oC]

100101102

10-1

100

101

102

10 ms

1 ms

100 µs

Operation in This Area

is Limited by R DS(on)

$ No te s :

1. TC = 25 oC

2. TJ = 175 oC

3. S ingle P u lse

-ID, Drain Current [A]

-VDS, Drain-Source Voltage [V]

25 50 75 100 125 150 175

-ID, D rain Cu rrent [A]

TC, Case Temperature [&

]

Figu re 7. Breakdo w n Voltag e Vari ation

vs. Temperature Figure 8. On-Resistance Variation

vs. Temperature

FQB15P12 / FQI15P12

Charge

VGS

-10V Qg

Qgs Qgd

-3mA

VGS

DUT

VDS

300nF

50K)

200nF

12V

Same Type

as DUT

Charge

VGS

-10V Qg

Qgs Qgd

-3mA

VGS

DUT

VDS

300nF

50K)

200nF

12V

Same Type

as DUT

VDS

VGS 10%

90%

td(on) tr

ton toff

td(off) tf

VDD

-10V

VDS RL

DUT

VGS

VDS

VGS 10%

90%

td(on) tr

ton toff

td(off) tf

VDD

-10V

VDS RL

DUT

VGS

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

-10V DUT

t p

EAS =LI

AS2

----

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

-10V DUT

t p

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & W aveforms

FQB15P12 / FQI15P12

Peak Diode Recovery dv/dt Tes t Ci rcuit & Wavef or ms

DUT

VDS

Driver

RGCompliment of DUT

(N-Channel)

VGS • dv/dt controlled by RG

•I

SD con troll e d by pul s e period

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recoverydv/dt

di/dt

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

DUT

VDS

Driver

RGCompliment of DUT

(N-Channel)

VGS • dv/dt controlled by RG

•I

SD con troll e d by pul s e period

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recoverydv/dt

di/dt

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

FQB15P12 / FQI15P12

Package Dimensions

10.00 ±0.20

(8.00)

(4.40)

1.27 ±0.10 0.80 ±0.10

0.80 ±0.10

(2XR0.45)

9.90 ±0.20 4.50 ±0.20

0.10 ±0.15

2.40 ±0.20

2.54 ±0.30

15.30 ±0.30

9.20 ±0.20

4.90 ±0.20

1.40 ±0.20

2.00 ±0.10

(0.75)

(1.75)

(7.20)

0°~3°

1.20 ±0.20

9.20 ±0.20

15.30 ±0.30

4.90 ±0.20

(0.40)

2.54 TYP 2.54 TYP

1.30 +0.10

–0.05

0.50 +0.10

–0.05

D2-PAK

Dimensions in Millimeters

FQB15P12 / FQI15P12

Package Dimensions (Continued)

9.90 ±0.20

2.40 ±0.20

4.50 ±0.20

1.27 ±0.10 1.47 ±0.10

(45°)

0.80 ±0.10

10.00 ±0.20

2.54 TYP2.54 TYP

13.08 ±0.20

9.20 ±0.20

1.20 ±0.20

10.08 ±0.20 MAX13.40

MAX 3.00

(0.40)

(1.46)

(0.94)

1.30 +0.10

–0.05

0.50 +0.10

–0.05

I2-PAK

Dimensions in Millimeters

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or systems are devic es or syst em s

which, (a) ar e intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary First Production T his dat asheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconduct or reserv es the right to make

changes at any time without notice in order to improve

design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. I6

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