z-b oS xo MOSPOWER Prime Product Selector Guide * 200C RATING (e; Packages: S {i | i U J u " BVpss Quad | Quad (Volts) TO-3 TO-220 TO-39 10-237 T0-92 TO-202 Side Braze Plastic 450-500 IRF450 IRF840 13A, 0.49 BA, 0.852 IRF440 VN5001 D/IRF830 BA, 0.852 5.5A, 1.52 VNPOO2A * IRF820 6.5A, 1.52 2.5A, 30 VN5001A/IRF430 4.5A, 1.5 350-400 IRF350 IRF740 15A, 0.30 10A, 0.550 IRF340 VN4000D/IRF730 10A, 0.550 5.5A, 1.02 VNMO01A # IRF720 BA, 1.00 3A, 1.80 VN4000A/IRF330 5.5A, 1.02 150-240 tRF250 IRF640 VN2406B VN2406M VN2406L 30A, 0.0852 18A, 0.189 0.8A, 62 0.3A, 62 0.21A, 62 IRF240 IRF630 VN2410M VN2410L 18A, 0.180 9A, 0.42 0.25A, 100 0.16A, 109 IRF230 IRF620 9A, 0.40 5A, 0.80 IRF220 VN2406D 5A, 0.80 1.4A, 62 RF623 RF622 F221 = IRF222 = IRF223 F624 = iR | IR ir IRF220 IRF620 IRFO IRF220 = IRF224 IRF222 IRF223 Ss IRF620 = IRF621 IRF622 IRF623 Siliconix Advanced Informati 200V; -Channel Enhancement Mode non These power FETs are designed especially for switching regulators, power converters, solenoid drivers and relay drivers. FEATURES Product Summary = No Second Breakdown Never | BYoss | Rosiom | tp | Package w High Input Impedance IRF 220 200V a Internal Drain-Source Diode IRF221 150V 0.892 5.08 ws Very Rugged: Excellent SOA IAF202 200v TO-3 a Extremely Fast Switching IRF223 450V 1.20 4.04 IRF620 200V BENEFITS 082 | 5.0A IRF621 150V 22048 w Reduced Component Count iareo2 | 200v wma | aoa To = Improved Performance TRFe23 Ts0V s Simpler Designs a Improved Reliability | ool s ABSOLUTE MAXIMUM RATINGS (Tc = 25C unless otherwise noted) Drain-Source Voltage . IRF220,222,620,622 .....ccceceeccseees 200 Gate Current (Peak) .......... cee eee ee eee + 2A IRF221,223,621,623 ..........ccceeeeeee 150V Gate Source Voltage ............ cece eee + 40V Drain-Gate Voltage . Total Power Dissipation ................56. 40w IRF220,222,620,622 ..........cce eee eeee 200V Linear Derating Factor .......... 2+. 0.32W/C IRF221,223,621,623 ...... ccc cece cece eee 150V Storage and Junction Drain Current Continuous! Temperature .............06. -55C to +150C IRF220,221,620,621 ........... eee eee + 5.0A Notes: IRF222,223,622,623 ......-..-2-eeeeee + 4.0A 1. Limited by package dissipation. PUISED?. 06... cece ccc cecen esses eeaaeeeees +20A 2. Pulse test 80us to 300us, 1% duty cycle. PACKAGE DIMENSIONS 5 mac L_MAX |_| Y 0.043 11.092) F pase SEATING 0.638 (0.965) MIN {+ $98 ae PLANE 4.197 ar pati! 408 m \ 0.675 (17.145) 1177 (28.896) La ae (6.35) 0.655 76.637) dA ESN (in 1 ; 8 vaso 111.1765 Y fry | 2 \ ae foe | (+ 2 0420 770.668) Ww wi | 1 TE oN ae om aie 0208 16.207) aor com view he RMAX J- 821420) PIN 1 Gate PIN 1 Gate PIN 2 Source PIN 2 & TAB Drain CASE Drain PIN 3 Source TO-3 TO-220AB 2-10 Siliconix ELECTRICAL CHARACTERISTICS (Te =25C unless otherwise noted). Symbol | Parameter | Part Number] :Min | . Typ | Max Unit | : Test Conditions | Static IRF 220, 222-6 po BV, Drain-Source Breakdown IRF 620, 622 a Vv 1'Vgg <9, Ip= 250A pss IRF 221, 223 Jf Sope mos IRF 621, 623 Vestn) | Gate Threshold Voitage ANY 2 4 V_ | Ves=Vos; Ip=1mA lass Gate Body Leakage _ All +100 nA | Ves= + 20V, Vos =0 loss Zero Gate Voltage Drain Alt , Ot | 026 | mA Vos= Rated Vos Vas=0 Current = i 02 7 1.0 Vps = Rated Vps, Vas =9, To = 125C IRF 220, 221 / tpsion) | Drain-Source On IRF 620, 621 ot 8s @ |. Vag= 10V, Ip = 2.5A (Note 1) Resistance IRF 222, 223 3 | 42 , : IRF 622, 623 0. IDion) On-State Drain Current , All 5 A | Vps=25V, Vas = 10V (Note 1) : Dynamic Ofs Forward Transconductance All 1,3 2.3 S | Vpg=25V, Ip = 2.5A (Note 1) Ciss Input Capacitance Ail 450 | 600 Reverse Transfer Crss Capacitance All 40 | 80 | oF | Vag=0, Vpg = 25V, f= 1 MHz Common-Source Output Coss Capacitance All 160 300 tafon) Turn-On Delay Time All 40 tr Rise Time | All 80 | og | VoD =75V, Ip=2.5A, R, = 309, Ry =259, taoff) Turn-Off Delay Time | All 100 (Figure 1) te Fall Time " All 60 Drain-Source Diode Characteristics Vsp Forward ON Voltage. . AH -1.57 V_ | Igs=~-5A, Veg =0 (Note 1) 3 . Ip =-5A, Veg = 0, di/dt = 100A/, ter Reverse Recovery Time All 450 ns. (Figure 2) Ss us Note 1: Pulse Test 80ys to 300 us, 1% duty cycle TEST CIRCUITS FIGURE 1 Switching Test Circuit Vin Yoo | ~ 1 | | Agen | O Vout ae | | 20v T! | +t: | | | | siReurr = { PULSE UNDER . [generator] [TEST | PW. = 1 ps Cg <50 pF DUTY CYCLE =1% FIGURE 2 Reverse Recovery Test Circuit v 500 di/dt Adjust (1- 27uH) At 5 To 50uF IN6093 RS PK yAdjust 4 N ho 9 24011 rr + 2 iNa001 40000 F = q . 3 R< 0.250 LS 0.0%uH if rs AA. Tw VVVv WNA723 2N4204 SCOPE FROM TRIGGER CKT ; Siliconix c9ddl = co9Aal = bC9AMl = 079A ccdal = Cocdal = =bCcdal = OCCA