MMRF1009HR5 MMRF1009HSR5
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
RF power transistors designed for applications operating at frequencies
from 900 to 1215 MHz. These devices are suitable for use in defense and
commercial pulse applications, such as IFF and DME.
Typical Pulse Performance: VDD =50Vdc,I
DQ = 200 mA,
Pulse Width = 128 sec, Duty Cycle = 10%
Application
Pout
(W)
f
(MHz)
Gps
(dB)
D
(%)
Narrowband 500 Peak 1030 19.7 62.0
Broadband 500 Peak 960--1215 18.5 57.0
Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 500 W Peak Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +110 Vdc
Gate--Source Voltage VGS --6.0, +10 Vdc
Storage Temperature Range Tstg -- 65 to +150 C
Case Operating Temperature TC150 C
Operating Junction Temperature (1) TJ225 C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2) Unit
Thermal Impedance, Junction to Case
Case Temperature 80C, 500 W Pulse, 128 sec Pulse Width, 10% Duty Cycle ZJC 0.044 C/W
1. Continuous use at maximum temperature will affect MTTF.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MMRF1009H
Rev. 0, 1/2014
Freescale Semiconductor
Technical Data
960--1215 MHz, 500 W, 50 V
PULSE
LATERAL N--CHANNEL
RF POWER MOSFETs
MMRF1009HR5
MMRF1009HSR5
NI--780S--2L
MMRF1009HSR5
NI--780H--2L
MMRF1009HR5
Freescale Semiconductor, Inc., 2014.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
MMRF1009HR5 MMRF1009HSR5
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2, passes 2600 V
Machine Model (per EIA/JESD22--A115) B, passes 200 V
Charge Device Model (per JESD22--C101) IV, passes 2000 V
Table 4. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 10 Adc
Drain--Source Breakdown Voltage
(VGS =0Vdc,I
D= 200 mA)
V(BR)DSS 110 — — Vdc
Zero Gate Voltage Drain Leakage Current
(VDS =50Vdc,V
GS =0Vdc)
IDSS — — 20 Adc
Zero Gate Voltage Drain Leakage Current
(VDS =90Vdc,V
GS =0Vdc)
IDSS — — 200 Adc
On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D=1.32mA)
VGS(th) 0.9 1.7 2.4 Vdc
Gate Quiescent Voltage
(VDD =50Vdc,I
D= 200 mAdc, Measured in Functional Test)
VGS(Q) 1.7 2.4 3.2 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=3.26Adc)
VDS(on) —0.25 —Vdc
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS =50Vdc30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Crss —0.2 —pF
Output Capacitance
(VDS =50Vdc30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Coss —697 —pF
Input Capacitance
(VDS =50Vdc,V
GS =0Vdc30 mV(rms)ac @ 1 MHz)
Ciss —1391 —pF
Functional Tests (In Freescale Narrowband Test Fixture, 50 ohm system) VDD =50Vdc,I
DQ = 200 mA, Pout = 500 W Peak (50 W Avg.),
f = 1030 MHz, 128 sec Pulse Width, 10% Duty Cycle
Power Gain Gps 18.5 19.7 22.0 dB
Drain Efficiency D58.0 62.0 — %
Input Return Loss IRL — -- 1 8 -- 9 dB
Typical Broadband Performance — 960--1215 MHz (In Freescale 960--1215 MHz Test Fixture, 50 ohm system) VDD =50Vdc,
IDQ = 200 mA, Pout = 500 W Peak (50 W Avg.), f = 960--1215 MHz, 128 sec Pulse Width, 10% Duty Cycle
Power Gain Gps —18.5 —dB
Drain Efficiency D—57.0 — %
1. Part internally matched both on input and output.
MMRF1009HR5 MMRF1009HSR5
3
RF Device Data
Freescale Semiconductor, Inc.
Figure 1. MMRF1009HR5(HSR5) Test Circuit Schematic
Z11 0.161” x 1.500Microstrip
Z12 0.613” x 1.281Microstrip
Z13 0.248” x 0.865Microstrip
Z14 0.087” x 0.425Microstrip
Z15 0.309” x 0.090Microstrip
Z16 0.193” x 0.516Microstrip
Z17 0.279” x 0.080Microstrip
Z18 0.731” x 0.080Microstrip
Z19, Z21 0.507” x 0.040Microstrip
PCB Arlon CuClad 250GX--0300--55--22, 0.030,r=2.55
Z1 0.457x 0.080Microstrip
Z2 0.250x 0.080Microstrip
Z3 0.605x 0.040Microstrip
Z4 0.080x 0.449Microstrip
Z5 0.374x 0.608Microstrip
Z6 0.118x 1.252Microstrip
Z7 0.778x 1.710Microstrip
Z8 0.095x 1.710Microstrip
Z9, Z20 0.482x 0.050Microstrip
Z10 0.138x 1.500Microstrip
Z1
RF
INPUT
C1
Z2 Z4
DUT
C2
RF
OUTPUT
VBIAS
V
SUPPLY
C8
C5 C12 C14
+
Z16
R3
Z3
C15
+
Z5
C7
Z15Z14Z13Z12Z11Z10
Z8Z7Z6
Z9
Z19
R1
C9
Z20
Z21
Z17 Z18
C6 C16
C3
C11 C10
R2
C4
R4
C13
Table 5. MMRF1009HR5(HSR5) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C2 5.1 pF Chip Capacitors ATC100B5R1CT500XT ATC
C3, C4, C5, C6 33 pF Chip Capacitors ATC100B330JT500XT ATC
C7, C10 10 F, 50 V Chip Capacitors GRM55DR61H106KA88L Murata
C8,C11,C13,C16 2.2 F, 100 V Chip Capacitors 2225X7R225KT3AB ATC
C9 22 F, 25 V Chip Capacitor TPSD226M025R0200 AVX
C12 1F, 100 V Chip Capacitor GRM31CR72A105KA01L Murata
C14, C15 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp
R1, R2 56 , 1/4 W Chip Resistors CRCW120656R0FKEA Vishay
R3, R4 0, 3 A Chip Resistors CRCW12060000Z0EA Vishay
4
RF Device Data
Freescale Semiconductor, Inc.
MMRF1009HR5 MMRF1009HSR5
Figure 2. MMRF1009HR5(HSR5) Test Circuit Component Layout
R3
CUT OUT AREA
C9 C8 C7 C3
R1
C1
R4
C11 C10
R2
C4 C6
C16
C2
C12
C5 C13
C14
C15
MMRF1009HR5 MMRF1009HSR5
5
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
50
0.1
10000
02010
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 3. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
30
Ciss
10
1
40
Coss
Crss
Measured with 30 mV(rms)ac @ 1 MHz
VGS =0Vdc
100
0
160
0
VDD =50Vdc,I
DQ = 200 mA
f = 1030 MHz, Pulse Width = 128 sec
10
100
DUTY CYCLE (%)
Figure 4. Safe Operating Area
MAXIMUM OPERATING Tcase (C)
25
140
120
80
60
40
20
52015
Pout = 525 W
Pout = 475 W
Pout = 500 W
22
30
0
100
21
20
80
60
50
40
Pout, OUTPUT POWER (WATTS) PEAK
Figure 5. Power Gain and Drain Efficiency
versus Output Power
Gps, POWER GAIN (dB)
D, DRAIN EFFICIENCY (%)
D
14
1000
Gps
18
VDD =50Vdc,I
DQ = 200 mA, f = 1030 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
62
30
55
54
53
Pin, INPUT POWER (dBm) PEAK
Figure 6. Output Power versus Input Power
56
52
51
50
49
32 34 36 38 40 42
Pout, OUTPUT POWER (WATTS)
P3dB = 57.6 dBm (575 W)
Actual
Ideal
P1dB = 57.1 dBm (511 W)
VDD =50Vdc,I
DQ = 200 mA, f = 1030 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
57
58
59
17
22
30
21
Pout, OUTPUT POWER (WATTS) PEAK
Figure 7. Power Gain versus Output Power
Gps, POWER GAIN (dB)
100
20
IDQ = 800 mA
1000
600 mA
19
18
200 mA
VDD = 50 Vdc, f = 1030 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
Figure 8. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) PEAK
Gps, POWER GAIN (dB)
VDD =30V
12
22
30
16
21
35 V
20
45 V
100 1000
50 V
19
18
17
40 V
IDQ = 200 mA, f = 1030 MHz
Pulse Width = 128 sec
Duty Cycle = 10%
1000
19
16
17
15
70
30
20
10
60
61
400 mA
13
15
14
6
RF Device Data
Freescale Semiconductor, Inc.
MMRF1009HR5 MMRF1009HSR5
TYPICAL CHARACTERISTICS
12
0
700
062
500
400
Pin, INPUT POWER (dBm) PEAK
Figure 9. Output Power versus Input Power
Pout, OUTPUT POWER (WATTS)
48
600
10
TC=--30_C
VDD =50Vdc,I
DQ = 200 mA, f = 1030 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
85_C
55_C
25_C
14
22
30
0
80
100
60
50
Pout, OUTPUT POWER (WATTS) PEAK
Figure 10. Power Gain and Drain Efficiency versus
Output Power
Gps, POWER GAIN (dB)
D, DRAIN EFFICIENCY (%)
D
21
1000
25_C
TC=--30_C
85_C
40
20
18 55_C
VDD =50Vdc,I
DQ = 200 mA, f = 1030 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
Gps
200
100
300
19
16
17
15
70
30
20
10
250
109
90
TJ, JUNCTION TEMPERATURE (C)
Figure 11. MTTF versus Junction Temperature
MTTF calculator available at http:/www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
105
110 130 150 170 190
MTTF (HOURS)
210 230
108
VDD =50Vdc
Pout = 500 W Peak
Pulse Width = 128 sec
Duty Cycle = 10%
D= 62%
VDD =50Vdc,I
DQ = 200 mA, Pout = 500 W Peak
f
MHz
Zsource
Zload
1030 1.36 -- j1.27 2.50 -- j0.17
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 12. Series Equivalent Source and Load Impedance
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Zsource Zload
MMRF1009HR5 MMRF1009HSR5
7
RF Device Data
Freescale Semiconductor, Inc.
Figure 13. MMRF1009HR5(HSR5) Test Circuit Component Layout — 960--1215 MHz
R1
C10
CUT OUT AREA
R2
C7
C5
C3
C2
C1
C6
C4
C12
C14
C16
C8
C17
C18
C15
C13
C9
C11
Table 6. MMRF1009HR5(HSR5) Test Circuit Component Designations and Values — 960--1215 MHz
Part Description Part Number Manufacturer
C1 2.2 pF Chip Capacitor ATC100B2R2JT500XT ATC
C2 0.2 pF Chip Capacitor ATC100B0R2BT500XT ATC
C3, C4 33 pF Chip Capacitors ATC100B330JT500XT ATC
C5, C6, C11, C12 2.2 F, 100 V Chip Capacitors G2225X7R225KT3AB ATC
C7 22 F, 35 V Tantalum Capacitor T491X226K035AT Kemet
C8 8.2 pF Chip Capacitor ATC100B8R2CT500XT ATC
C9, C10 39 pF Chip Capacitors ATC100B390JT500XT ATC
C13, C14 0.022 F, 100 V Chip Capacitors C1825C223K1GAC Kemet
C15, C16 0.10 F, 100 V Chip Capacitors C1812F104K1RAC Kemet
C17, C18 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp
R1, R2 22 , 1/4 W Chip Resistors CRCW120622R0FKEA Vishay
PCB 0.030,r=2.55 AD255A Arlon
8
RF Device Data
Freescale Semiconductor, Inc.
MMRF1009HR5 MMRF1009HSR5
TYPICAL CHARACTERISTICS — 960--1215 MHz
Gps, POWER GAIN (dB)
1300900
IRL
Gps
f, FREQUENCY (MHz)
Figure 14. Power Gain, Drain Efficiency and IRL
versus Frequency
1150110010501000950
20
18
-- 2 0
66
62
0
-- 1 0
D, DRAIN
EFFICIENCY (%)
D
15
14
11
10
19
17
16 58
13
12
1200 1250
VDD =50Vdc,P
out = 500 W Peak (50 W Avg.), IDQ = 200 mA
Pulse Width = 128 sec, Duty Cycle = 10%
600
17
22
40
65
Pout, OUTPUT POWER (WATTS) PEAK
Figure 15. Power Gain and Drain Efficiency versus
Output Power
VDD =50Vdc
IDQ = 200 mA
Pulse Width = 128 sec
Duty Cycle = 10%
400200
21
20
19
18
60
55
50
45
DDRAIN EFFICIENCY (%)
Gps
D
Gps, POWER GAIN (dB)
64
60
56
-- 5
-- 1 5
IRL, INPUT RETURN
LOSS (dB)
250 300 350 450 500 550
1150 MHz
1030 MHz
960 MHz
1215 MHz
1150 MHz
1030 MHz
960 MHz
1215 MHz
MMRF1009HR5 MMRF1009HSR5
9
RF Device Data
Freescale Semiconductor, Inc.
Zo=5
Zload
f = 1215 MHz
f = 960 MHz
Zsource
f = 960 MHz
f = 1215 MHz
VDD =50Vdc,I
DQ = 200 mA, Pout = 500 W Peak
f
MHz
Zsource
Zload
960 2.25 -- j1.78 1.38 -- j1.53
1030 2.51 -- j1.02 1.48 -- j1.11
1090 2.69 -- j0.73 1.51 -- j0.78
1150 2.71 -- j0.65 1.53 -- j0.49
1215 2.48 -- j0.76 1.53 -- j0.33
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 16. Series Equivalent Source and Load Impedance — 960--1215 MHz
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Zsource Zload
10
RF Device Data
Freescale Semiconductor, Inc.
MMRF1009HR5 MMRF1009HSR5
PACKAGE DIMENSIONS
MMRF1009HR5 MMRF1009HSR5
11
RF Device Data
Freescale Semiconductor, Inc.
12
RF Device Data
Freescale Semiconductor, Inc.
MMRF1009HR5 MMRF1009HSR5
MMRF1009HR5 MMRF1009HSR5
13
RF Device Data
Freescale Semiconductor, Inc.
14
RF Device Data
Freescale Semiconductor, Inc.
MMRF1009HR5 MMRF1009HSR5
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Jan. 2014 Initial Release of Data Sheet
MMRF1009HR5 MMRF1009HSR5
15
RF Device Data
Freescale Semiconductor, Inc.
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Document Number: MMRF1009H
Rev. 0, 1/2014
