M25PX80-VMP6TG0Y - MICRON TECHNOLOGY

M25PX80 NOR Serial Flash Embedded

Memory

8Mb, Dual I/O, 4KB Subsector Erase, 3V Serial Flash Memory

with 75 MHz SPI Bus Interface

Features

• SPI bus compatible serial interface

• 75 MHz (maximum) clock frequency

• 2.3V to 3.6V single supply voltage

• Dual input/output instructions resulting in an

equivalent clock frequency of 150MHz

– Dual output fast read instruction

– Dual input fast program instruction

• 8Mb flash memory

– Uniform 4KB subsectors

– Uniform 64KB sectors

• Additional 64-byte user-lockable, one-time pro-

grammable (OTP) area

• Erase capability

– Subsector (4KB granularity)

– Sector (64KB granularity)

– Bulk erase (8Mb) in 8 s (TYP)

• Write protections

– Software write protection: applicable to every

64KB sector (volatile lock bit)

– Hardware write protection: protected area size

defined by non-volatile bits BP0, BP1, BP2

• Deep power down: 5µA (TYP)

• Electronic signature

– JEDEC standard 2-byte signature (7114h)

– Unique ID code (UID) with 16-byte read-only

space, available upon request

• More than 100,000 write cycles per sector

• More than 20 years data retention

• Packages (RoHS compliant)

– VFQFPN8 (MP) 6mm x 5mm

– SO8W (MW) 208mils

– SO8N (MN) 150mils

• Automotive grade parts available

M25PX80 Serial Flash Embedded Memory

Features

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Products and specifications discussed herein are subject to change by Micron without notice.

Contents

Functional Description ..................................................................................................................................... 6

Signal Descriptions ........................................................................................................................................... 8

Serial Peripheral Interface Modes ...................................................................................................................... 9

Operating Features ......................................................................................................................................... 11

Page Programming ..................................................................................................................................... 11

Dual Input Fast Program ............................................................................................................................. 11

Subsector Erase, Sector Erase, Bulk Erase ..................................................................................................... 11

Polling during a Write, Program, or Erase Cycle ............................................................................................ 11

Active Power, Standby Power, and Deep Power-Down .................................................................................. 11

Status Register ............................................................................................................................................ 12

Data Protection by Protocol ........................................................................................................................ 12

Software Data Protection ............................................................................................................................ 12

Hardware Data Protection .......................................................................................................................... 13

Hold Condition .......................................................................................................................................... 14

Memory Configuration and Block Diagram ...................................................................................................... 15

Memory Map – 8Mb Density ........................................................................................................................... 16

Command Set Overview ................................................................................................................................. 17

WRITE ENABLE .............................................................................................................................................. 19

WRITE DISABLE ............................................................................................................................................. 20

READ ID ........................................................................................................................................................ 21

READ STATUS REGISTER ................................................................................................................................ 22

WIP Bit ...................................................................................................................................................... 22

WEL Bit ...................................................................................................................................................... 22

Block Protect Bits ....................................................................................................................................... 23

Top/Bottom Bit .......................................................................................................................................... 23

SRWD Bit ................................................................................................................................................... 23

WRITE STATUS REGISTER .............................................................................................................................. 24

READ DATA BYTES ......................................................................................................................................... 26

READ DATA BYTES at HIGHER SPEED ............................................................................................................ 27

DUAL OUTPUT FAST READ ............................................................................................................................ 28

READ LOCK REGISTER ................................................................................................................................... 29

READ OTP ...................................................................................................................................................... 30

PAGE PROGRAM ............................................................................................................................................ 31

DUAL INPUT FAST PROGRAM ........................................................................................................................ 32

PROGRAM OTP .............................................................................................................................................. 33

WRITE to LOCK REGISTER ............................................................................................................................. 35

SUBSECTOR ERASE ....................................................................................................................................... 36

SECTOR ERASE .............................................................................................................................................. 37

BULK ERASE .................................................................................................................................................. 38

DEEP POWER-DOWN ..................................................................................................................................... 39

RELEASE from DEEP POWER-DOWN .............................................................................................................. 40

Power-Up/Down and Supply Line Decoupling ................................................................................................. 41

Maximum Ratings and Operating Conditions .................................................................................................. 43

Electrical Characteristics ................................................................................................................................ 44

AC Characteristics .......................................................................................................................................... 45

Package Information ...................................................................................................................................... 52

Device Ordering Information .......................................................................................................................... 55

Revision History ............................................................................................................................................. 56

Rev. C – 1/2014 ........................................................................................................................................... 56

Rev. B – 3/2013 ........................................................................................................................................... 56

M25PX80 Serial Flash Embedded Memory

Features

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Rev. A – 11/2012 .......................................................................................................................................... 56

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Features

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List of Figures

Figure 1: Logic Diagram ................................................................................................................................... 6

Figure 2: Pin Connections: VFQFPN, SO8N ...................................................................................................... 7

Figure 3: Bus Master and Memory Devices on the SPI Bus ............................................................................... 10

Figure 4: SPI Modes ....................................................................................................................................... 10

Figure 5: Hold Condition Activation ............................................................................................................... 14

Figure 6: Block Diagram ................................................................................................................................ 15

Figure 7: WRITE ENABLE Command Sequence .............................................................................................. 19

Figure 8: WRITE DISABLE Command Sequence ............................................................................................. 20

Figure 9: READ ID: Command Sequence ........................................................................................................ 21

Figure 10: READ STATUS REGISTER Command Sequence .............................................................................. 22

Figure 11: STATUS REGISTER Format ............................................................................................................ 22

Figure 12: WRITE STATUS REGISTER Command Sequence ............................................................................. 24

Figure 13: READ DATA BYTES Command Sequence ........................................................................................ 26

Figure 14: READ DATA BYTES AT HIGHER SPEED Command Sequence .......................................................... 27

Figure 15: DUAL OUTPUT FAST READ Command Sequence ........................................................................... 28

Figure 16: READ LOCK REGISTER Command Sequence ................................................................................. 29

Figure 17: READ OTP Command Sequence .................................................................................................... 30

Figure 18: PAGE PROGRAM Command Sequence ........................................................................................... 31

Figure 19: DUAL INPUT FAST PROGRAM Command Sequence ....................................................................... 32

Figure 20: PROGRAM OTP Command Sequence ............................................................................................. 33

Figure 21: How to Permanently Lock the OTP Bytes ........................................................................................ 34

Figure 22: WRITE to LOCK REGISTER Instruction Sequence ........................................................................... 35

Figure 23: SUBSECTOR ERASE Command Sequence ...................................................................................... 36

Figure 24: SECTOR ERASE Command Sequence ............................................................................................. 37

Figure 25: BULK ERASE Command Sequence ................................................................................................. 38

Figure 26: DEEP POWER-DOWN Command Sequence ................................................................................... 39

Figure 27: RELEASE from DEEP POWER-DOWN Command Sequence ............................................................. 40

Figure 28: Power-Up Timing .......................................................................................................................... 42

Figure 29: AC Measurement I/O Waveform ..................................................................................................... 45

Figure 30: Serial Input Timing ........................................................................................................................ 49

Figure 31: Write Protect Setup and Hold during WRSR when SRWD=1 Timing ................................................. 49

Figure 32: Hold Timing .................................................................................................................................. 50

Figure 33: Output Timing .............................................................................................................................. 50

Figure 34: VPPH Timing ................................................................................................................................. 51

Figure 35: VFQFPN8 (MLP8) 6mm x 5mm ...................................................................................................... 52

Figure 36: SO8W 208 mils Body Width ............................................................................................................ 53

Figure 37: SO8N 150 mils Body Width ............................................................................................................ 54

M25PX80 Serial Flash Embedded Memory

Features

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List of Tables

Table 1: Signal Descriptions ............................................................................................................................. 8

Table 2: SPI Modes .......................................................................................................................................... 9

Table 3: Software Protection Truth Table ........................................................................................................ 13

Table 4: Sectors 0 to 16, Protected Area Sizes – Upper Area Protection .............................................................. 13

Table 5: Sectors 0 to 16, Protected Area Sizes – Lower Area Protection .............................................................. 13

Table 6: Sectors 15:0 ...................................................................................................................................... 16

Table 7: Command Set Codes ........................................................................................................................ 18

Table 8: READ ID :Data Out Sequence ............................................................................................................ 21

Table 9: Status Register Protection Modes ...................................................................................................... 25

Table 10: Lock Register Out ............................................................................................................................ 29

Table 11: Lock Register In .............................................................................................................................. 35

Table 12: Absolute Maximum Ratings ............................................................................................................. 43

Table 13: Operating Conditions ...................................................................................................................... 43

Table 14: Data Retention and Endurance ........................................................................................................ 43

Table 15: Power Up Timing Specifications ...................................................................................................... 44

Table 16: DC Current Specifications ............................................................................................................... 44

Table 17: DC Voltage Specifications ................................................................................................................ 44

Table 18: AC Measurement Conditions ........................................................................................................... 45

Table 19: Capacitance .................................................................................................................................... 45

Table 20: AC Specifications (75MHz) .............................................................................................................. 46

Table 21: AC Specifications (50 MHz) ............................................................................................................. 47

Table 22: Part Number Information Scheme ................................................................................................... 55

M25PX80 Serial Flash Embedded Memory

Features

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Functional Description

The M25PX80 is an 8Mb (1Mb x 8) serial Flash memory device, with advanced write

protection mechanisms, accessed by a high speed SPI-compatible bus. The device sup-

ports two high-performance dual input/output commands that double the transfer

bandwidth for read and program operations:

• DUAL OUTPUT FAST READ command reads data at up to 75MHz by using both pin

DQ1 and pin DQ0 as outputs.

• DUAL INPUT FAST PROGRAM command programs data at up to 75MHz by using

both pin DQ1 and pin DQ0 as inputs.

Note: 75MHz operation is available only in VCC range 2.7V to 3.6V.

The memory can be programmed 1 to 256 bytes at a time, using the PAGE PROGRAM

command. It is organized as 16 sectors that are each further divided into 16 subsectors

(256 subsectors in total).

The memory can be erased a 4Kb subsector at a time, a 64Kb sector at a time, or as a

whole. It can be write protected by software using a mix of volatile and non-volatile pro-

tection features, depending on the application needs. The protection granularity is of

64Kb (sector granularity).

The device has 64 one-time-programmable bytes (OTP bytes) that can be read and pro-

grammed using two dedicated commands, READ OTP and PROGRAM OTP, respectively.

These 64 bytes can be locked permanently by a particular PROGRAM OTP sequence.

Once they have been locked, they become read-only and this state cannot be reverted.

Further features are available as additional security options. More information on these

security features is available, upon completion of an NDA (nondisclosure agreement),

and are, therefore, not described in this datasheet. For more details of this option con-

tact your nearest Micron sales office.

Figure 1: Logic Diagram

VCC

HOLD#

VSS

DQ1

DQ0

W#/VPP

M25PX80 Serial Flash Embedded Memory

Functional Description

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Signal Name Function Direction

C Serial clock Input

DQ0 Serial data input

(Serves as output during DUAL OUTPUT FAST READ operation)

I/O

DQ1 Serial data output

(Serves as input during DUAL INPUT FAST PROGRAM operation)

I/O

S# Chip select Input

W#/VPP Write protect or enhanced program supply voltage Input

HOLD# Hold Input

VCC Supply voltage –

VSS Ground –

Figure 2: Pin Connections: VFQFPN, SO8N

VCC

HOLD#

DQ1

VSS

DQ0

C W#/VPP

There is an exposed central pad on the underside of the VFQFPN package. This is pulled

internally to VSS, and must not be connected to any other voltage or signal line on the

PCB. The Package Mechanical section provides information on package dimensiions

and how to identify pin 1.

M25PX80 Serial Flash Embedded Memory

Functional Description

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Signal Descriptions

Table 1: Signal Descriptions

Signal Type Description

DQ1 Output Serial data: The DQ1 output signal is used to transfer data serially out of the device.

Data is shifted out on the falling edge of the serial clock (C). During the DUAL INPUT

FAST PROGRAM command, pin DQ1 is used as an input. It is latched on the rising edge

of C.

DQ0 Input Serial data: The DQ0 input signal is used to transfer data serially into the device. It

receives commands, addresses, and the data to be programmed. Values are latched on

the rising edge of the serial clock (C). During the DUAL OUTPUT FAST READ command,

pin DQ0 is used as an output. Data is shifted out on the falling edge of C.

C Input Clock: The C input signal provides the timing of the serial interface. Commands, ad-

dresses, or data present at serial data input (DQ0) is latched on the rising edge of the

serial clock (C). Data on DQ1 changes after the falling edge of C.

S# Input Chip select: When the S# input signal is HIGH, the device is deselected and DQ1 is at

HIGH impedance. Unless an internal PROGRAM, ERASE, or WRITE STATUS REGISTER cy-

cle is in progress, the device will be in the standby power mode (not the DEEP POWER-

DOWN mode). Driving S# LOW enables the device, placing it in the active power

mode. After power-up, a falling edge on S# is required prior to the start of any com-

mand.

HOLD# Input Hold: The HOLD# signal is used to pause any serial communications with the device

without deselecting the device. During the hold condition, DQ1 is High-Z. DQ0 and C

are "Don’t Care." To start the hold condition, the device must be selected, with S#

driven LOW.

W#/VPP Input Write protect/enhanced program supply voltage:The W#/VPP signal is both a con-

trol input and a power supply pin. The two functions are selected by the voltage

range applied to the pin. If the W#/VPP input is kept in a low voltage range (0 V to

VCC) the pin is seen as a control input. The W# input signal is used to freeze the size of

the area of memory that is protected against program or erase commands as specified

by the values in BP2, BP1, and BP0 bits of the Status Register. VPP acts as an additional

power supply if it is in the range of VPPH, as defined in the AC Measurement Condi-

tions table. Avoid applying VPPH to the W#/VPP pin during a Bulk Erase operation.

VCC Power Device core power supply: Source voltage.

VSS Ground Ground: Reference for the VCC supply voltage.

M25PX80 Serial Flash Embedded Memory

Signal Descriptions

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Serial Peripheral Interface Modes

The device can be driven by a microcontroller while its serial peripheral interface (SPI)

is in either of the two modes shown here. The difference between the two modes is the

clock polarity when the bus master is in standby mode and not transferring data. Input

data is latched in on the rising edge of the clock, and output data is available from the

falling edge of the clock.

Table 2: SPI Modes

SPI Modes Clock Polarity

CPOL = 0, CPHA = 0 C remains at 0 for (CPOL = 0, CPHA = 0)

CPOL = 1, CPHA = 1 C remains at 1 for (CPOL = 1, CPHA = 1)

The following figure is an example of three memory devices in a simple connection to

an MCU on an SPI bus. Because only one device is selected at a time, that one device

drives DQ1, while the other devices are HIGH-Z.

Resistors ensure the device is not selected if the bus master leaves S# HIGH-Z. The bus

master might enter a state in which all input/output is HIGH-Z simultaneously, such as

when the bus master is reset. Therefore, the serial clock must be connected to an exter-

nal pull-down resistor so that S# is pulled HIGH while the serial clock is pulled LOW.

This ensures that S# and the serial clock are not HIGH simultaneously and that tSHCH

is met. The typical resistor value of 100kΩ, assuming that the time constant R × Cp (Cp =

parasitic capacitance of the bus line), is shorter than the time the bus master leaves the

SPI bus in HIGH-Z.

Example: Cp = 50 pF, that is R × Cp = 5μs. The application must ensure that the bus

master never leaves the SPI bus HIGH-Z for a time period shorter than 5μs. W# and

HOLD# should be driven either HIGH or LOW, as appropriate.

M25PX80 Serial Flash Embedded Memory

Serial Peripheral Interface Modes

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Figure 3: Bus Master and Memory Devices on the SPI Bus

SPI bus master

SPI memory

device

SDO

SDI

SCK

DQ1 DQ0

SPI memory

device

DQ1 DQ0

SPI memory

device

DQ1 DQ0

CS3 CS2 CS1

SPI interface:

(CPOL, CPHA) =

(0, 0) or (1, 1)

W# HOLD# S# W# HOLD# S# W# HOLD#

R R R

VCC

VCC VCC VCC

VSS

VSS VSS VSS

Figure 4: SPI Modes

DQ0

DQ1

CPHA

CPOL

MSB

M25PX80 Serial Flash Embedded Memory

Serial Peripheral Interface Modes

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Operating Features

Page Programming

To program one data byte, two commands are required: WRITE ENABLE, which is one

byte, and a PAGE PROGRAM sequence, which is four bytes plus data. This is followed by

the internal PROGRAM cycle of duration tPP. To spread this overhead, the PAGE PRO-

GRAM command allows up to 256 bytes to be programmed at a time (changing bits

from 1 to 0), provided they lie in consecutive addresses on the same page of memory. To

optimize timings, it is recommended to use the PAGE PROGRAM command to program

all consecutive targeted bytes in a single sequence than to use several PAGE PROGRAM

sequences with each containing only a few bytes.

Dual Input Fast Program

The DUAL INPUT FAST PROGRAM command makes it possible to program up to 256

bytes using two input pins at the same time (by changing bits from 1 to 0). For opti-

mized timings, it is recommended to use the DUAL INPUT FAST PROGRAM command

to program all consecutive targeted bytes in a single sequence than to use several DUAL

INPUT FAST PROGRAM sequences each containing only a few bytes.

Subsector Erase, Sector Erase, Bulk Erase

The PAGE PROGRAM command allows bits to be reset from 1 to 0. Before this can be

applied, the bytes of memory need to have been erased to all 1s (FFh). This can be ach-

ieved a subsector at a time using the SUBSECTOR ERASE command, a sector at a time

using the SECTOR ERASE command, or throughout the entire memory using the BULK

ERASE command. This starts an internal ERASE cycle of duration tSSE, tSE or tBE. The

ERASE command must be preceded by a WRITE ENABLE command.

Polling during a Write, Program, or Erase Cycle

An improvement in the time to complete the following commands can be achieved by

not waiting for the worst case delay (tW, tPP, tSSE, tSE, or tBE).

• WRITE STATUS REGISTER

• PROGRAM OTP

• PROGRAM

• DUAL INPUT FAST PROGRAM

• ERASE (SUBSECTOR ERASE, SECTOR ERASE, BULK ERASE)

The write in progress (WIP) bit is provided in the status register so that the application

program can monitor this bit in the status register, polling it to establish when the pre-

vious WRITE cycle, PROGRAM cycle, or ERASE cycle is complete.

Active Power, Standby Power, and Deep Power-Down

When chip select (S#) is LOW, the device is selected, and in the ACTIVE POWER mode.

When S# is HIGH, the device is deselected, but could remain in the ACTIVE POWER

mode until all internal cycles have completed (PROGRAM, ERASE, WRITE STATUS

sumption drops to ICC1.

M25PX80 Serial Flash Embedded Memory

Operating Features

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The DEEP POWER-DOWN mode is entered when the DEEP POWER-DOWN command

is executed. The device consumption drops further to ICC2. The device remains in this

mode until the RELEASE FROM DEEP POWER-DOWN command is executed. While in

the DEEP POWER-DOWN mode, the device ignores all WRITE, PROGRAM, and ERASE

commands. This provides an extra software protection mechanism when the device is

not in active use, by protecting the device from inadvertent WRITE, PROGRAM, or

ERASE operations. For further information, see DEEP POWER-DOWN.

Status Register

The status register contains a number of status and control bits that can be read or set

(as appropriate) by specific commands. For a detailed description of the status register

bits, see READ STATUS REGISTER.

Data Protection by Protocol

Non-volatile memory is used in environments that can include excessive noise. The fol-

lowing capabilities help protect data in these noisy environments.

Power on reset and an internal timer (tPUW) can provide protection against inadvertent

changes while the power supply is outside the operating specification.

PROGRAM, ERASE, and WRITE STATUS REGISTER commands are checked before they

are accepted for execution to ensure they consist of a number of clock pulses that is a

multiple of eight.

All commands that modify data must be preceded by a WRITE ENABLE command to set

the write enable latch (WEL) bit.

In addition to the low power consumption feature, the DEEP POWER-DOWN mode of-

fers extra software protection since all WRITE, PROGRAM, and ERASE commands are

ignored when the device is in this mode.

Software Data Protection

Memory can be configured as read-only using the top/bottom bit and the block protect

bits (BP2, BP1, BP0) as shown in the Protected Area Sizes table.

Memory sectors can be protected by specific lock registers assigned to each 64KB sec-

tor. These lock registers can be read and written using the READ LOCK REGISTER and

WRITE to LOCK REGISTER commands. In each lock register the following two bits con-

trol the protection of each sector:

• Write lock bit: This bit determines whether the contents of the sector can be modified

using the WRITE, PROGRAM, and ERASE commands. When the bit is set to ‘1’, the

sector is write protected, and any operations that attempt to change the data in the

sector will fail. When the bit is reset to ‘0’, the sector is not write protected by the lock

• Lock down bit: This bit provides a mechanism for protecting software data from sim-

ple hacking and malicious attack. When the bit is set to '1’, further modification to the

write lock bit and lock down bit cannot be performed. A power-up, is required before

changes to these bits can be made. When the bit is reset to ‘0’, the write lock bit and

lock down bit can be changed.

The software protection truth table shows the lock down bit and write lock bit settings

and the sector protection status.

M25PX80 Serial Flash Embedded Memory

Operating Features

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Table 3: Software Protection Truth Table

Sector Lock Register

Bits

Lock Down Write Lock Protection Status

0 0 Sector unprotected from PROGRAM / ERASE / WRITE operations; protection status reversible

0 1 Sector protected from PROGRAM / ERASE / WRITE operations; protection status reversible

1 0 Sector unprotected from PROGRAM / ERASE / WRITE operations; protection status cannot be

changed except by a power-up.

1 1 Sector protected from PROGRAM / ERASE / WRITE operations; protection status cannot be

changed except by a power-up.

Hardware Data Protection

Hardware data protection is implemented using the write protect signal applied on the

W#/VPP pin. This freezes the status register in a read-only mode, protecting the block

protect (BP) bits and the status register write disable bit (SRWD). The device is ready to

accept a BULK ERASE command only if all block protect bits are 0.

Table 4: Sectors 0 to 16, Protected Area Sizes – Upper Area Protection

Status Register Content Memory Content

Top/Bottom Bit BP2 BP1 BP0 Protected Area Unprotected Area

0 0 0 0 None All sectors 1

0 0 0 1 Upper 16th (sector 15) Lower 15/16ths (sectors 0 to 14)

0 0 1 0 Upper 8th (sectors 14 to 15) Lower 7/8ths (sectors 0 to 13 )

0 0 1 1 Upper 4th (sectors 12 to 15) Lower 3/4ths (sectors 0 to 11)

0 1 0 0 Upper half (sectors 8 to 15) Lower half (sectors 0 to 7)

0 1 0 1 All sectors None

0 1 1 0 All sectors None

0 1 1 1 All sectors None

Note: 1. The device is ready to accept a BULK ERASE command only if all block protect bits are 0.

Table 5: Sectors 0 to 16, Protected Area Sizes – Lower Area Protection

Status Register Content Memory Content

Top/Bottom Bit BP2 BP1 BP0 Protected Area Unprotected Area

1 0 0 0 None All sectors 1

1 0 0 1 Lower 16th (sector 0) Upper 15/16ths (sectors 1 to 15)

1 0 1 0 Lower 8th (sectors 0 to 1) Upper 7/8ths (sectors 2 to 15 )

1 0 1 1 Lower 4th (sectors 0 to 3) Upper 3/4ths (sectors 4 to 15)

1 1 0 0 Lower half (sectors 3 to 7) Upper half (sectors 8 to 15)

1 1 0 1 All sectors None

1 1 1 0 All sectors None

M25PX80 Serial Flash Embedded Memory

Operating Features

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Table 5: Sectors 0 to 16, Protected Area Sizes – Lower Area Protection (Continued)

Status Register Content Memory Content

Top/Bottom Bit BP2 BP1 BP0 Protected Area Unprotected Area

1 1 1 1 All sectors None

Note: 1. The device is ready to accept a BULK ERASE command only if all block protect bits are 0.

Hold Condition

The HOLD# signal is used to pause any serial communications with the device without

resetting the clocking sequence. However, taking this signal LOW does not terminate

any WRITE STATUS REGISTER, PROGRAM, or ERASE cycle that is currently in progress.

To enter the hold condition, the device must be selected, with S# LOW. The hold condi-

tion starts on the falling edge of the HOLD# signal, if this coincides with serial clock (C)

being LOW. The hold condition ends on the rising edge of the HOLD# signal, if this co-

incides with C being LOW. If the falling edge does not coincide with C being LOW, the

hold condition starts after C next goes LOW. Similarly, if the rising edge does not coin-

cide with C being LOW, the hold condition ends after C next goes LOW.

During the hold condition, DQ1 is HIGH impedance while DQ0 and C are Don’t Care.

Typically, the device remains selected with S# driven LOW for the duration of the hold

condition. This ensures that the state of the internal logic remains unchanged from the

moment of entering the hold condition. If S# goes HIGH while the device is in the hold

condition, the internal logic of the device is reset. To restart communication with the

device, it is necessary to drive HOLD# HIGH, and then to drive S# LOW. This prevents

the device from going back to the hold condition.

Figure 5: Hold Condition Activation

HOLD#

HOLD condition (standard use) HOLD condition (nonstandard use)

M25PX80 Serial Flash Embedded Memory

Operating Features

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Memory Configuration and Block Diagram

Each page of memory can be individually programmed; bits are programmed from 1 to

0. The device is subsector, sector, or bulk-erasable, but not page-erasable; bits are

erased from 0 to 1.. The memory is configured as follows:

• 1,048,576 bytes (8 bits each)

• 256 subsectors (4KB each)

• 16 sectors (64KB each)

• 4,096 pages (256 bytes each)

• 64 OTP bytes located outside the main memory array

Figure 6: Block Diagram

HOLD#

VPP Control Logic

High Voltage

Generator

I/O Shift Register

Address Register

and Counter

256 Byte

Data Buffer

256 bytes (page size)

X Decoder

Y Decoder

DQ0

DQ1

Status

00000h

0FFFFFh

000FFh

64 OTP bytes

M25PX80 Serial Flash Embedded Memory

Memory Configuration and Block Diagram

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Memory Map – 8Mb Density

Table 6: Sectors 15:0

Sector Subsector

Address Range

Start End

15 255 000F F000 000F FFFF

254 000F E000 000F EFFF

253 000F D000 000F DFFF

⋮ ⋮ ⋮

242 000F 2000 000F 2FFF

241 000F 1000 000F 1FFF

240 000F 0000 000F 0FFF

14 239 000E F000 000E FFFF

238 000E E000 000E EFFF

237 000E D000 000E DFFF

⋮ ⋮ ⋮

226 000E 2000 000E 2FFF

225 000E 1000 000E 1FFF

224 000E 0000 000E 0FFF

⋮ ⋮ ⋮ ⋮

1 31 0001 F000 0001 FFFF

30 0001 E000 0001 EFFF

29 0001 D000 0001 DFFF

⋮ ⋮ ⋮

18 0001 2000 0001 2FFF

17 0001 1000 0001 1FFF

16 0001 0000 0001 0FFF

0 15 0000 F000 0000 FFFF

14 0000 E000 0000 EFFF

13 0000 D000 0000 DFFF

⋮ ⋮ ⋮

2 0000 2000 0000 2FFF

1 0000 1000 0000 1FFF

0 0000 0000 0000 0FFF

M25PX80 Serial Flash Embedded Memory

Memory Map – 8Mb Density

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Command Set Overview

All commands, addresses, and data are shifted in and out of the device, most significant

bit first.

Serial data inputs DQ0 and DQ1 are sampled on the first rising edge of serial clock (C)

after chip select (S#) is driven LOW. Then, the one-byte command code must be shifted

in to the device, most significant bit first, on DQ0 and DQ1, each bit being latched on

the rising edges of C.

Every command sequence starts with a one-byte command code. Depending on the

command, this command code might be followed by address or data bytes, by address

and data bytes, or by neither address or data bytes. For the following commands, the

shifted-in command sequence is followed by a data-out sequence. S# can be driven

HIGH after any bit of the data-out sequence is being shifted out.

• READ DATA BYTES (READ)

• READ DATA BYTES at HIGHER SPEED

• DUAL OUTPUT FAST READ

• READ OTP

• READ LOCK REGISTERS

• READ STATUS REGISTER

• READ IDENTIFICATION

• RELEASE from DEEP POWER-DOWN

For the following commands, S# must be driven HIGH exactly at a byte boundary. That

is, after an exact multiple of eight clock pulses following S# being driven LOW, S# must

be driven HIGH. Otherwise, the command is rejected and not executed.

• PAGE PROGRAM

• PROGRAM OTP

• DUAL INPUT FAST PROGRAM

• SUBSECTOR ERASE

• SECTOR ERASE

• BULK ERASE

• WRITE STATUS REGISTER

• WRITE to LOCK REGISTER

• WRITE ENABLE

• WRITE DISABLE

• DEEP POWER-DOWN

All attempts to access the memory array are ignored during a WRITE STATUS REGISTER

command cycle, a PROGRAM command cycle, or an ERASE command cycle. In addi-

tion, the internal cycle for each of these commands continues unaffected.

M25PX80 Serial Flash Embedded Memory

Command Set Overview

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Table 7: Command Set Codes

Command Name

One-Byte

Command Code

Bytes

Address Dummy Data

WRITE ENABLE 0000

0110

06h 0 0 0

WRITE DISABLE 0000

0100

04h 0 0 0

READ IDENTIFICATION 1001

1111

9Fh 0 0 1 to 20

1001

1110

9Eh 1 to 20

READ STATUS REGISTER 0000

0101

05h 0 0 1 to ∞

WRITE STATUS REGISTER 0000

0001

01h 0 0 1

WRITE to LOCK REGISTER 1110

0101

E5h 3 0 1

READ LOCK REGISTER 1110

1000

E8h 3 0 1

READ DATA BYTES 0000

0011

03h 3 0 1 to ∞

READ DATA BYTES at HIGHER SPEED 0000

1011

0Bh 3 1 1 to ∞

DUAL OUTPUT FAST READ 0011

1011

3Bh 3 1 1 to ∞

READ OTP (Read 64 bytes of OTP area) 0100

1011

4Bh 3 1 1 to 65

PROGRAM OTP (Program 64 bytes of OTP

area)

0100

0010

42h 3 0 1 to 65

PAGE PROGRAM 0000

0010

02h 3 0 1 to 256

DUAL INPUT FAST PROGRAM 1010

0010

A2h 3 0 1 to 256

SUBSECTOR ERASE 0010

0000

20h 3 0 0

SECTOR ERASE 1101

1000

D8h 3 0 0

BULK ERASE 1100

0111

C7h 0 0 0

DEEP POWER-DOWN 1011

1001

B9h 0 0 0

RELEASE from DEEP POWER-DOWN 1010

1011

ABh 0 0 0

M25PX80 Serial Flash Embedded Memory

Command Set Overview

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WRITE ENABLE

The WRITE ENABLE command sets the write enable latch (WEL) bit.

The WEL bit must be set before execution of every PROGRAM, ERASE, and WRITE com-

mand.

The WRITE ENABLE command is entered by driving chip select (S#) LOW, sending the

command code, and then driving S# HIGH.

Figure 7: WRITE ENABLE Command Sequence

Don’t Care

DQ[0]

01 2 4 53 76

High-Z

DQ1

MSB

LSB

0 0 0 0 0 011

Command bits

M25PX80 Serial Flash Embedded Memory

WRITE ENABLE

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WRITE DISABLE

The WRITE DISABLE command resets the write enable latch (WEL) bit.

The WRITE DISABLE command is entered by driving chip select (S#) LOW, sending the

command code, and then driving S# HIGH.

The WEL bit is reset under the following conditions:

• Power-up

• Completion of any ERASE operation

• Completion of any PROGRAM operation

• Completion of any WRITE REGISTER operation

• Completion of WRITE DISABLE operation

Figure 8: WRITE DISABLE Command Sequence

Don’t Care

DQ[0]

01 2 4 53 76

High-Z

DQ1

MSB

LSB

0 0 0 0 0 001

Command bits

M25PX80 Serial Flash Embedded Memory

WRITE DISABLE

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READ ID

The READ IDENTIFICATION command reads the following device identification data:

• Manufacturer identification (1 byte): This is assigned by JEDEC.

• Device identification (2 bytes): This is assigned by device manufacturer; the first byte

indicates memory type and the second byte indicates device memory capacity.

• A Unique ID code (UID) (17 bytes,16 available upon customer request): The first byte

contains length of data to follow; the remaining 16 bytes contain optional Customized

Factory Data (CFD) content.

Table 8: READ ID :Data Out Sequence

Manufacturer ID

Device ID UID

Memory Type Memory Capacity CFD Length CFD Content

20h 71h 14h 10h 16 bytes

Note: 1. The CFD bytes are read-only and can be programmed with customer data upon demand.

If customers do not make requests, the devices are shipped with all the CFD bytes pro-

grammed to zero.

A READ IDENTIFICATION command is not decoded while an ERASE or PROGRAM cy-

cle is in progress and has no effect on a cycle in progress. The READ IDENTIFICATION

command must not be issued while the device is in DEEP POWER-DOWN mode. The

device is first selected by driving S# LOW. Then the 8-bit command code is shifted in

and content is shifted out on DQ1 as follows: the 24-bit device identification that is stor-

ed in the memory, the 8-bit CFD length, followed by 16 bytes of CFD content. Each bit is

shifted out during the falling edge of serial clock (C). The READ IDENTIFICATION com-

mand is terminated by driving S# HIGH at any time during data output. When S# is

driven HIGH, the device is put in the STANDBY POWER mode and waits to be selected

so that it can receive, decode, and execute commands.

Figure 9: READ ID: Command Sequence

UIDDevice

identification

Manufacturer

identification

High-Z

DQ1

MSB MSB

DOUT DOUT DOUT DOUT

LSB

7 8 15 16 32

MSB

DQ0

LSB

Command

MSB

DOUT DOUT

LSB

Don’t Care

M25PX80 Serial Flash Embedded Memory

READ ID

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READ STATUS REGISTER

The READ STATUS REGISTER command allows the status register to be read. The status

ded to check the write in progress (WIP) bit before sending a new command to the de-

vice. It is also possible to read the status register continuously.

Figure 10: READ STATUS REGISTER Command Sequence

High-Z

DQ1

7 8 9 10 11 12 13 14 15

MSB

DQ0

LSB

Command

MSB

DOUT DOUT DOUT DOUT DOUT

LSB

DOUT DOUT DOUT DOUT

Don’t Care

Figure 11: STATUS REGISTER Format

SRWD 0TB BP2 BP1 BP0 WEL WIP

Status register write protect

Block protect bits

Top/bottom bit

Write enable latch bit

Write in progress bit

WIP Bit

The write in progress (WIP) bit indicates whether the memory is busy with a WRITE

STATUS REGISTER cycle, a PROGRAM cycle, or an ERASE cycle. When the WIP bit is set

to 1, a cycle is in progress; when the WIP bit is set to 0, a cycle is not in progress.

WEL Bit

The write enable latch (WEL) bit indicates the status of the internal write enable latch.

When the WEL bit is set to 1, the internal write enable latch is set; when the WEL bit is

M25PX80 Serial Flash Embedded Memory

READ STATUS REGISTER

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set to 0, the internal write enable latch is reset and no WRITE STATUS REGISTER, PRO-

GRAM, or ERASE command is accepted.

Block Protect Bits

The block protect bits are non-volatile. They define the size of the area to be software

protected against PROGRAM and ERASE commands. The block protect bits are written

with the WRITE STATUS REGISTER command.

When one or more of the block protect bits is set to 1, the relevant memory area, as de-

fined in the Protected Area Sizes table, becomes protected against PAGE PROGRAM and

SECTOR ERASE commands. The block protect bits can be written provided that the

HARDWARE PROTECTED mode has not been set. The BULK ERASE command is execu-

ted only if all block protect bits are 0.

Top/Bottom Bit

The top/bottom (TB) bit is non-volatile. It can be set and reset with the WRITE STATUS

TB bit is used in conjunction with the block protect bits to determine if the protected

area defined by the block protect bits starts from the top or the bottom of the memory

array:

• When TB is reset to 0 (default value), the area protected by the block protect bits starts

from the top of the memory array.

• When TB is set to 1, the area protected by the block protect bits starts from the bot-

tom of the memory array.

The TB bit cannot be written when the status register write disable (SRWD) bit is set to 1

and the W# pin is driven LOW.

SRWD Bit

The status register write disable (SRWD) bit is operated in conjunction with the write

protect (W#/VPP) signal. When the SRWD bit is set to 1 and W#/VPP is driven LOW, the

device is put in the hardware protected mode. In the hardware protected mode, the

non-volatile bits of the status register (SRWD, and the block protect bits) become re-

adonly bits and the WRITE STATUS REGISTER command is no longer accepted for exe-

cution.

M25PX80 Serial Flash Embedded Memory

READ STATUS REGISTER

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WRITE STATUS REGISTER

The WRITE STATUS REGISTER command allows new values to be written to the status

ABLE command must have been executed previously. After the WRITE ENABLE com-

mand has been decoded and executed, the device sets the write enable latch (WEL) bit.

The WRITE STATUS REGISTER command is entered by driving chip select (S#) LOW,

followed by the command code and the data byte on serial data input (DQ0). The

WRITE STATUS REGISTER command has no effect on b6, b5, b4, b1, and b0 of the sta-

tus register. The status register b6 is b5, and b4 are always read as ‘0’. S# must be driven

HIGH after the eighth bit of the data byte has been latched in. If not, the WRITE STATUS

Figure 12: WRITE STATUS REGISTER Command Sequence

7 8 9 10 11 12 13 14 15

MSB

DQ0

LSB

Command

MSB

LSB

DIN DIN DIN DIN DIN

DIN DIN DIN DIN

As soon as S# is driven HIGH, the self-timed WRITE STATUS REGISTER cycle is initi-

ated; its duration is tW. While the WRITE STATUS REGISTER cycle is in progress, the sta-

tus register may still be read to check the value of the write in progress (WIP) bit. The

WIP bit is 1 during the self-timed WRITE STATUS REGISTER cycle, and is 0 when the

cycle is completed. Also, when the cycle is completed, the WEL bit is reset.

The WRITE STATUS REGISTER command allows the user to change the values of the

block protect bits (BP2, BP1, BP0). Setting these bit values defines the size of the area

that is to be treated as read-only, as defined in the Protected Area Sizes table.

The WRITE STATUS REGISTER command also allows the user to set and reset the status

The SRWD bit and the W#/VPP signal allow the device to be put in the HARDWARE PRO-

TECED (HPM) mode. The WRITE STATUS REGISTER command is not executed once

the HPM is entered. The options for enabling the status register protection modes are

summarized here.

M25PX80 Serial Flash Embedded Memory

WRITE STATUS REGISTER

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Table 9: Status Register Protection Modes

W#/VPP

Signal

SRWD

Bit

Protection

Mode (PM)

Status Register

Write Protection

Memory Content

Notes

Protected

Area

Unprotected

Area

1 0 SOFTWARE

PROTECTED mode

(SPM)

Software protection Commands not

accepted

Commands

accepted

1, 2, 3

0 0

1 1

0 1 HARDWARE

PROTECTED mode

(HPM)

Hardware protection Commands not

accepted

Commands

accepted

3, 4, 5,

Notes: 1. Software protection: status register is writable (SRWD, BP2, BP1, and BP0 bit values can

be changed) if the WRITE ENABLE command has set the WEL bit.

2. PAGE PROGRAM, SECTOR ERASE, AND BULK ERASE commands are not accepted.

3. PAGE PROGRAM and SECTOR ERASE commands can be accepted.

4. Hardware protection: status register is not writable (SRWD, BP2, BP1, and BP0 bit values

cannot be changed).

5. PAGE PROGRAM, SECTOR ERASE, AND BULK ERASE commands are not accepted.

When the SRWD bit of the status register is 0 (its initial delivery state), it is possible to

write to the status register provided that the WEL bit has been set previously by a WRITE

ENABLE command, regardless of whether the W#/VPP signal is driven HIGH or LOW.

When the status register SRWD bit is set to 1, two cases need to be considered depend-

ing on the state of the W#/VPP signal:

• If the W#/VPP signal is driven HIGH, it is possible to write to the status register provi-

ded that the WEL bit has been set previously by a WRITE ENABLE command.

• If the W#/VPP signal is driven LOW, it is not possible to write to the status register even

if the WEL bit has been set previously by a WRITE ENABLE command. Therefore, at-

tempts to write to the status register are rejected, and are not accepted for execution.

The result is that all the data bytes in the memory area that have been put in SPM by

the status register block protect bits (BP2, BP1, BP0) are also hardware protected

against data modification.

Regardless of the order of the two events, the HPM can be entered in either of the fol-

lowing ways:

• Setting the status register SRWD bit after driving the W#/VPP signal LOW

• Driving the W#/VPP signal LOW after setting the status register SRWD bit.

The only way to exit the HPM is to pull the W#/VPP signal HIGH. If the W#/VPP signal is

permanently tied HIGH, the HPM can never be activated. In this case, only the SPM is

available, using the status register block protect bits (BP2, BP1, BP0).

M25PX80 Serial Flash Embedded Memory

WRITE STATUS REGISTER

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READ DATA BYTES

The device is first selected by driving chip select (S#) LOW. The command code for

READ DATA BYTES is followed by a 3-byte address (A23-A0), each bit being latched-in

during the rising edge of serial clock (C). Then the memory contents at that address is

shifted out on serial data output (DQ1), each bit being shifted out at a maximum fre-

quency fR during the falling edge of C.

The first byte addressed can be at any location. The address is automatically incremen-

ted to the next higher address after each byte of data is shifted out. Therefore, the entire

memory can be read with a single READ DATA BYTES command. When the highest ad-

dress is reached, the address counter rolls over to 000000h, allowing the read sequence

to be continued indefinitely.

The READ DATA BYTES command is terminated by driving S# HIGH. S# can be driven

HIGH at any time during data output. Any READ DATA BYTES command issued while

an ERASE, PROGRAM, or WRITE cycle is in progress is rejected without any effect on

the cycle that is in progress.

Figure 13: READ DATA BYTES Command Sequence

Don’t Care

MSB

DQ[0]

LSB

Command

A[MAX]

A[MIN]

7 8 Cx

High-Z

DQ1

MSB

DOUT DOUT DOUT DOUT DOUT

LSB

DOUT DOUT DOUT DOUT

Note: 1. Cx = 7 + (A[MAX] + 1).

M25PX80 Serial Flash Embedded Memory

READ DATA BYTES

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READ DATA BYTES at HIGHER SPEED

The device is first selected by driving chip select (S#) LOW. The command code for the

READ DATA BYTES at HIGHER SPEED command is followed by a 3-byte address (A23-

A0) and a dummy byte, each bit being latched-in during the rising edge of serial clock

(C). Then the memory contents at that address are shifted out on serial data output

(DQ1) at a maximum frequency fC, during the falling edge of C.

The first byte addressed can be at any location. The address is automatically incremen-

ted to the next higher address after each byte of data is shifted out. Therefore, the entire

memory can be read with a single READ DATA BYTES at HIGHER SPEED command.

When the highest address is reached, the address counter rolls over to 000000h, allow-

ing the read sequence to be continued indefinitely.

The READ DATA BYTES at HIGHER SPEED command is terminated by driving S# HIGH.

S# can be driven HIGH at any time during data output. Any READ DATA BYTES at

HIGHER SPEED command issued while an ERASE, PROGRAM, or WRITE cycle is in

progress is rejected without any effect on the cycle that is in progress.

Figure 14: READ DATA BYTES AT HIGHER SPEED Command Sequence

7 8 Cx

MSB

DQ0

LSB

Command

A[MAX]

A[MIN]

MSB

DOUT DOUT DOUT DOUT DOUT

LSB

DOUT DOUT DOUT DOUT

Dummy cycles

DQ1 High-Z

Don’t Care

M25PX80 Serial Flash Embedded Memory

READ DATA BYTES at HIGHER SPEED

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DUAL OUTPUT FAST READ

The DUAL OUTPUT FAST READ command is similar to the READ DATA BYTES at

HIGHER SPEED command, except that data is shifted out on two pins (DQ0 and DQ1)

instead of one. Outputting the data on two pins doubles the data transfer bandwidth

compared to the READ DATA BYTES at HIGHER SPEED command. The device is first

selected by driving chip select S# LOW. The command code for the DUAL OUTPUT

FAST READ command is followed by a 3-byte address (A23-A0) and a dummy byte, each

bit being latched-in during the rising edge of serial clock (C). Then the memory con-

tents at that address are shifted out on DQ0 and DQ1 at a maximum frequency fC, dur-

ing the falling edge of C.

Figure 15: DUAL OUTPUT FAST READ Command Sequence

7 8 Cx

MSB

DQ0

LSB

Command DOUT

LSB

DQ1 DOUT

A[MAX]

High-Z

A[MIN]

DOUT

MSB

DOUT

Dummy cycles

The first byte addressed can be at any location. The address is automatically incremen-

ted to the next higher address after each byte of data is shifted out on DQ0 and DQ1.

Therefore, the entire memory can be read with a single DUAL OUTPUT FAST READ

command. When the highest address is reached, the address counter rolls over to 00

0000h so that the read sequence can be continued indefinitely.

M25PX80 Serial Flash Embedded Memory

DUAL OUTPUT FAST READ

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READ LOCK REGISTER

The device is first selected by driving chip select (S#) LOW. The command code for the

READ LOCK REGISTER command is followed by a 3-byte address (A23-A0) pointing to

any location inside the concerned sector. Each address bit is latched-in during the ris-

ing edge of serial clock (C). Then the value of the lock register is shifted out on serial

data output (DQ1), each bit being shifted out at a maximum frequency fC during the

falling edge of C.

The READ LOCK REGISTER command is terminated by driving S# HIGH at any time

during data output.

Figure 16: READ LOCK REGISTER Command Sequence

MSB

DQ[0]

LSB

Command

A[MAX]

A[MIN]

7 8 Cx

High-Z

DQ1

MSB

DOUT DOUT DOUT DOUT DOUT

LSB

DOUT DOUT DOUT DOUT

Don’t Care

Note: 1. Cx = 7 + (A[MAX] + 1).

Any READ LOCK REGISTER command issued while an ERASE, PROGRAM, or WRITE

cycle is in progress is rejected without any effect on the cycle that is in progress.

Values of b1 and b0 after power-up are defined in Power-Up/Down and Supply Line De-

coupling (page 41).

Table 10: Lock Register Out

Bit Bit name Value Function

b7-b2 Reserved

b1 Sector lock down 1 The write lock and lock-down bits cannot be changed. Once a value of 1 is writ-

ten to the lock-down bit, it cannot be cleared to a value of 0 except by a power-

up.

0 The write lock and lock-down bits can be changed by writing new values to

them.

b0 Sector write lock 1 WRITE, PROGRAM, and ERASE operations in this sector will not be executed. The

memory contents will not be changed.

0 WRITE, PROGRAM, or ERASE operations in this sector are executed and will

modify the sector contents.

M25PX80 Serial Flash Embedded Memory

READ LOCK REGISTER

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READ OTP

The device is first selected by driving chip select (S#) LOW. The command code for the

READ OTP (one-time programmable) command is followed by a 3-byte address (A23-

A0) and a dummy byte. Each bit is latched in on the rising edge of serial clock (C). Then

the memory contents at that address are shifted out on serial data output (DQ1). Each

bit is shifted out at the maximum frequency fCmax on the falling edge of C. The address

is automatically incremented to the next higher address after each byte of data is shifted

out.

There is no rollover mechanism with the READ OTP command. This means that the

READ OTP command must be sent with a maximum of 65 bytes to read because once

the 65th byte has been read, the same 65th byte continues to be read on the DQ1 pin.

The READ OTP command is terminated by driving S# HIGH. S# can be driven HIGH at

any time during data output. Any READ OTP command issued while an ERASE, PRO-

GRAM, or WRITE cycle is in progress is rejected without having any effect on the cycle

that is in progress.

Figure 17: READ OTP Command Sequence

7 8 Cx

MSB

DQ0

LSB

Command

A[MAX]

A[MIN]

MSB

DOUT DOUT DOUT DOUT DOUT

LSB

DOUT DOUT DOUT DOUT

Dummy cycles

DQ1 High-Z

Don’t Care

Note: 1. Cx = 7 + (A[MAX] + 1).

M25PX80 Serial Flash Embedded Memory

READ OTP

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PAGE PROGRAM

The PAGE PROGRAM command allows bytes in the memory to be programmed, which

means the bits are changed from 1 to 0. Before a PAGE PROGRAM command can be ac-

cepted a WRITE ENABLE command must be executed. After the WRITE ENABLE com-

mand has been decoded, the device sets the write enable latch (WEL) bit.

The PAGE PROGRAM command is entered by driving chip select (S#) LOW, followed by

the command code, three address bytes, and at least one data byte on serial data input

(DQ0).

If the eight least significant address bits (A7-A0) are not all zero, all transmitted data that

goes beyond the end of the current page are programmed from the start address of the

same page; that is, from the address whose eight least significant bits (A7-A0) are all

zero. S# must be driven LOW for the entire duration of the sequence.

If more than 256 bytes are sent to the device, previously latched data are discarded and

the last 256 data bytes are guaranteed to be programmed correctly within the same

page. If less than 256 data bytes are sent to device, they are correctly programmed at the

requested addresses without any effects on the other bytes of the same page.

For optimized timings, it is recommended to use the PAGE PROGRAM command to

program all consecutive targeted bytes in a single sequence rather than to use several

PAGE PROGRAM sequences, each containing only a few bytes.

S# must be driven HIGH after the eighth bit of the last data byte has been latched in.

Otherwise the PAGE PROGRAM command is not executed.

As soon as S# is driven HIGH, the self-timed PAGE PROGRAM cycle is initiated; the cy-

cles's duration is tPP. While the PAGE PROGRAM cycle is in progress, the status register

may be read to check the value of the write in progress (WIP) bit. The WIP bit is 1 during

the self-timed PAGE PROGRAM cycle, and 0 when the cycle is completed. At some un-

specified time before the cycle is completed, the write enable latch (WEL) bit is reset.

A PAGE PROGRAM command is not executed if it applies to a page protected by the

block protect bits BP2, BP1, and BP0.

Figure 18: PAGE PROGRAM Command Sequence

7 8 Cx

MSB

DQ[0]

LSB

Command

A[MAX]

A[MIN]

MSB

DIN DIN DIN DIN DIN

LSB

DIN DIN DIN DIN

Note: 1. Cx = 7 + (A[MAX] + 1).

M25PX80 Serial Flash Embedded Memory

PAGE PROGRAM

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DUAL INPUT FAST PROGRAM

The DUAL INPUT FAST PROGRAM command is similar to the PAGE PROGRAM com-

mand, except that data is entered on two pins (DQ0 and DQ1) instead of one, doubling

the data transfer bandwidth.

The DUAL INPUT FAST PROGRAM command is entered by driving Chip Select S# LOW,

followed by the command code, three address bytes, and at least one data byte on serial

data input (DQ0).

If the eight least significant address bits (A7-A0) are not all zero, all transmitted data that

goes beyond the end of the current page is programmed from the start address of the

same page; that is, from the address whose eight least significant bits (A7-A0) are all

zero. S# must be driven LOW for the entire duration of the sequence.

If more than 256 bytes are sent to the device, previously latched data is discarded and

the last 256 data bytes are guaranteed to be programmed correctly within the same

page. If less than 256 data bytes are sent to device, they are correctly programmed at the

requested addresses without any effect on other bytes in the same page.

For optimized timings, it is recommended to use the DUAL INPUT FAST PROGRAM

command to program all consecutive targeted bytes in a single sequence than to use

several DUAL INPUT FAST PROGRAM sequences, each containing only a few bytes.

S# must be driven HIGH after the eighth bit of the last data byte has been latched in.

Otherwise the DUAL INPUT FAST PROGRAM command is not executed.

As soon as S# is driven HIGH, the self-timed PAGE PROGRAM cycle is initiated; the cy-

cle's duration is tPP. While the DUAL INPUT FAST PROGRAM cycle is in progress, the

status register may be read to check the value of the write In progress (WIP) bit. The

WIP bit is 1 during the self-timed PAGE PROGRAM cycle, and 0 when the cycle is com-

pleted. At some unspecified time before the cycle is completed, the write enable latch

(WEL) bit is reset.

A DUAL INPUT FAST PROGRAM command is not executed if it applies to a page protec-

ted by the block protect bits BP2, BP1, and BP0.

Figure 19: DUAL INPUT FAST PROGRAM Command Sequence

7 8 Cx

MSB

DQ0

LSB

Command DIN

LSB

DQ1 DIN

A[MAX]

High-Z

A[MIN]

DIN

MSB

DIN

Notes: 1. For the M25PX16, the DUAL INPUT FAST PROGRAM command is available only in VCC

range 2.7 V - 3.6 V.

2. Cx = 7 + (A[MAX] + 1).

M25PX80 Serial Flash Embedded Memory

DUAL INPUT FAST PROGRAM

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PROGRAM OTP

The PROGRAM OTP command allows a maximum of 64 bytes in the OTP memory area

to be programmed, which means the bits are changed from 1 to 0. Before a PROGRAM

OTP command can be accepted, a WRITE ENABLE command must have been executed

previously. After the WRITE ENABLE command has been decoded, the device sets the

write enable latch (WEL) bit.

The PROGRAM OTP command is entered by driving chip select (S#) LOW, followed by

the command opcode, three address bytes, and at least one data byte on serial data in-

put (DQ0).

S# must be driven HIGH after the eighth bit of the last data byte has been latched in.

Otherwise the PROGRAM OTP command is not executed.

There is no rollover mechanism with the PROGRAM OTP command. This means that

the PROGRAM OTP command must be sent with a maximum of 65 bytes to program.

When all 65 bytes have been latched in, any following byte will be discarded.

As soon as S# is driven HIGH, the self-timed PAGE PROGRAM cycle is initiated; the cy-

cle's duration is tPP. While the PROGRAM OTP cycle is in progress, the status register

may be read to check the value of the write in progress (WIP) bit. The WIP bit is 1 during

the self-timed PROGRAM OTP cycle, and 0 when when the cycle is completed. At some

unspecified time before the cycle is complete, the WEL bit is reset.

Figure 20: PROGRAM OTP Command Sequence

7 8 Cx

MSB

DQ[0]

LSB

Command

A[MAX]

A[MIN]

MSB

DIN DIN DIN DIN DIN

LSB

DIN DIN DIN DIN

Note: 1. Cx = 7 + (A[MAX] + 1).

The OTP control byte is byte 64. Bit 0 of this OTP control byte is used to permanently

lock the OTP memory array.

• When bit 0 of the OTP control byte = 1, the 64 bytes of the OTP memory array can be

programmed.

• When bit 0 of the OTP control byte = 0, the 64 bytes of the OTP memory array are

read-only and cannot be programmed anymore.

Once a bit of the OTP memory has been programmed to 0, it can no longer be set to 1.

Therefore, as soon as bit 0 of the control byte is set to 0, the 64 bytes of the OTP memory

array is set permanently as read-only.

Any PROGRAM OTP command issued while an ERASE, PROGRAM, or WRITE cycle is in

progress is rejected without any effect on the cycle that is in progress.

M25PX80 Serial Flash Embedded Memory

PROGRAM OTP

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Figure 21: How to Permanently Lock the OTP Bytes

byte

X X X X X X X bit 0

OTP control byte64 data bytes

Bit 1 to bit 7 are NOT

programmable

When bit 0 = 0

the 64 OTP bytes

become READ only

M25PX80 Serial Flash Embedded Memory

PROGRAM OTP

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WRITE to LOCK REGISTER

The WRITE to LOCK REGISTER instruction allows the lock register bits to be changed.

Before the WRITE to LOCK REGISTER instruction can be accepted, a WRITE ENABLE

instruction must have been executed previously. After the WRITE ENABLE instruction

has been decoded, the device sets the write enable latch (WEL) bit.

The WRITE to LOCK REGISTER instruction is entered by driving chip select (S#) LOW,

followed by the instruction code, three address bytes, and one data byte on serial data

input (DQ0). The address bytes must point to any address in the targeted sector. S#

must be driven HIGH after the eighth bit of the data byte has been latched in. Otherwise

the WRITE to LOCK REGISTER instruction is not executed.

Lock register bits are volatile, and therefore do not require time to be written. When the

WRITE to LOCK REGISTER instruction has been successfully executed, the WEL bit is

reset after a delay time of less than tSHSL minimum value.

Any WRITE to LOCK REGISTER instruction issued while an ERASE, PROGRAM, or

WRITE cycle is in progress is rejected without any effect on the cycle that is in progress.

Figure 22: WRITE to LOCK REGISTER Instruction Sequence

7 8 Cx

MSB

DQ[0]

LSB

Command

A[MAX]

A[MIN]

MSB

DIN DIN DIN DIN DIN

LSB

DIN DIN DIN DIN

Note: 1. Cx = 7 + (A[MAX] + 1).

Table 11: Lock Register In

Sector Bit Value

All sectors b7–b2 0

All sectors b1 Sector lock-down bit value

All sectors b0 Sector write lock bit value

Note: Values of b1 and b0 after power-up are defined in Power-Up/Down and Supply

Line Decoupling (page 41). For the sector lock down and sector write lock values, see

the Lock Register Out table in READ LOCK REGISTER (page 29).

M25PX80 Serial Flash Embedded Memory

WRITE to LOCK REGISTER

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SUBSECTOR ERASE

The SUBSECTOR ERASE command sets to 1 (FFh) all bits inside the chosen subsector.

Before the SUBSECTOR ERASE command can be accepted, a WRITE ENABLE com-

mand must have been executed previously. After the WRITE ENABLE command has

been decoded, the device sets the write enable latch (WEL) bit.

The SUBSECTOR ERASE command is entered by driving chip select (S#) LOW, followed

by the command code, and three address bytes on serial data input (DQ0). Any address

inside the subsector is a valid address for the SUBSECTOR ERASE command. S# must

be driven LOW for the entire duration of the sequence.

S# must be driven HIGH after the eighth bit of the last address byte has been latched in.

Otherwise the SUBSECTOR ERASE command is not executed. As soon as S# is driven

HIGH, the self-timed SUBSECTOR ERASE cycle is initiated; the cycle's duration is tSSE.

While the SUBSECTOR ERASE cycle is in progress, the status register may be read to

check the value of the write in progress (WIP) bit. The WIP bit is 1 during the self-timed

SUBSECTOR ERASE cycle, and is 0 when the cycle is completed. At some unspecified

time before the cycle is complete, the WEL bit is reset.

A SUBSECTOR ERASE command issued to a sector that is hardware or software protec-

ted is not executed.

Any SUBSECTOR ERASE command issued while an ERASE, PROGRAM, or WRITE cycle

is in progress is rejected without any effect on the cycle that is in progress.

Figure 23: SUBSECTOR ERASE Command Sequence

7 8 Cx

MSB

DQ0

LSB

Command

A[MAX]

A[MIN]

Note: 1. Cx = 7 + (A[MAX] + 1).

M25PX80 Serial Flash Embedded Memory

SUBSECTOR ERASE

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SECTOR ERASE

The SECTOR ERASE command sets to 1 (FFh) all bits inside the chosen sector. Before

the SECTOR ERASE command can be accepted, a WRITE ENABLE command must have

been executed previously. After the WRITE ENABLE command has been decoded, the

device sets the write enable latch (WEL) bit.

The SECTOR ERASE command is entered by driving chip select (S#) LOW, followed by

the command code, and three address bytes on serial data input (DQ0). Any address in-

side the sector is a valid address for the SECTOR ERASE command. S# must be driven

LOW for the entire duration of the sequence.

S# must be driven HIGH after the eighth bit of the last address byte has been latched in.

Otherwise the SECTOR ERASE command is not executed. As soon as S# is driven HIGH,

the self-timed SECTOR ERASE cycle is initiated; the cycle's duration is tSE. While the

SECTOR ERASE cycle is in progress, the status register may be read to check the value of

the write in progress (WIP) bit. The WIP bit is 1 during the self-timed SECTOR ERASE

cycle, and is 0 when the cycle is completed. At some unspecified time before the cycle is

completed, the WEL bit is reset.

A SECTOR ERASE command is not executed if it applies to a sector that is hardware or

software protected.

Figure 24: SECTOR ERASE Command Sequence

7 8 Cx

MSB

DQ0

LSB

Command

A[MAX]

A[MIN]

Note: 1. Cx = 7 + (A[MAX] + 1).

M25PX80 Serial Flash Embedded Memory

SECTOR ERASE

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BULK ERASE

The BULK ERASE command sets all bits to 1 (FFh). Before the BULK ERASE command

can be accepted, a WRITE ENABLE command must have been executed previously. Af-

ter the WRITE ENABLE command has been decoded, the device sets the write enable

latch (WEL) bit.

The BULK ERASE command is entered by driving chip select (S#) LOW, followed by the

command code on serial data input (DQ0). S# must be driven LOW for the entire dura-

tion of the sequence.

S# must be driven HIGH after the eighth bit of the command code has been latched in.

Otherwise the BULK ERASE command is not executed. As soon as S# is driven HIGH,

the self-timed BULK ERASE cycle is initiated; the cycle's duration is tBE. While the BULK

ERASE cycle is in progress, the status register may be read to check the value of the write

In progress (WIP) bit. The WIP bit is 1 during the self-timed BULK ERASE cycle, and is 0

when the cycle is completed. At some unspecified time before the cycle is completed,

the WEL bit is reset.

The BULK ERASE command is executed only if all block protect (BP2, BP1, BP0) bits are

0. The BULK ERASE command is ignored if one or more sectors are protected.

Figure 25: BULK ERASE Command Sequence

MSB

DQ0

LSB

Command

M25PX80 Serial Flash Embedded Memory

BULK ERASE

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DEEP POWER-DOWN

Executing the DEEP POWER-DOWN command is the only way to put the device in the

lowest power consumption mode, the DEEP POWER-DOWN mode. The DEEP POWER-

DOWN command can also be used as a software protection mechanism while the de-

vice is not in active use because in the DEEP POWER-DOWN mode the device ignores

all WRITE, PROGRAM, and ERASE commands.

Driving chip select (S#) HIGH deselects the device, and puts it in the STANDBY POWER

mode if there is no internal cycle currently in progress. Once in STANDBY POWER

mode, the DEEP POWER-DOWN mode can be entered by executing the DEEP POWER-

DOWN command, subsequently reducing the standby current from ICC1 to ICC2.

To take the device out of DEEP POWER-DOWN mode, the RELEASE from DEEP POW-

ER-DOWN command must be issued. Other commands must not be issued while the

device is in DEEP POWER-DOWN mode. The DEEP POWER-DOWN mode stops auto-

matically at power-down. The device always powers up in STANDBY POWER mode.

The DEEP POWER-DOWN command is entered by driving S# LOW, followed by the

command code on serial data input (DQ0). S# must be driven LOW for the entire dura-

tion of the sequence.

S# must be driven HIGH after the eighth bit of the command code has been latched in.

Otherwise the DEEP POWER-DOWN command is not executed. As soon as S# is driven

HIGH, it requires a delay of tDP before the supply current is reduced to ICC2 and the

DEEP POWER-DOWN mode is entered.

Any DEEP POWER-DOWN command issued while an ERASE, PROGRAM, or WRITE cy-

cle is in progress is rejected without any effect on the cycle that is in progress.

Figure 26: DEEP POWER-DOWN Command Sequence

MSB

DQ0

LSB tDP

Command

Don’t Care

Deep Power-Down ModeStandby Mode

M25PX80 Serial Flash Embedded Memory

DEEP POWER-DOWN

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RELEASE from DEEP POWER-DOWN

Once the device has entered DEEP POWER-DOWN mode, all commands are ignored ex-

cept RELEASE from DEEP POWER-DOWN and READ ELECTRONIC SIGNATURE. Exe-

cuting either of these commands takes the device out of the DEEP POWER-DOWN

mode.

The RELEASE from DEEP POWER-DOWN command is entered by driving chip select

(S#) LOW, followed by the command code on serial data input (DQ0). S# must be driven

LOW for the entire duration of the sequence.

The RELEASE from DEEP POWER-DOWN command is terminated by driving S# HIGH.

Sending additional clock cycles on serial clock C while S# is driven LOW causes the

command to be rejected and not executed.

After S# has been driven HIGH, followed by a delay, tRES, the device is put in the STAND-

BY mode. S# must remain HIGH at least until this period is over. The device waits to be

selected so that it can receive, decode, and execute commands.

Any RELEASE from DEEP POWER-DOWN command issued while an ERASE, PRO-

GRAM, or WRITE cycle is in progress is rejected without any effect on the cycle that is in

progress.

Figure 27: RELEASE from DEEP POWER-DOWN Command Sequence

High-Z

DQ1

MSB

DQ0

LSB tRDP

Command

Don’t Care

Deep Power-Down Mode Standby Mode

M25PX80 Serial Flash Embedded Memory

RELEASE from DEEP POWER-DOWN

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Power-Up/Down and Supply Line Decoupling

At power-up and power-down, the device must not be selected; that is, chip select (S#)

must follow the voltage applied on VCC until VCC reaches the correct value:

• VCC,min at power-up, and then for a further delay of tVSL

• VSS at power-down

A safe configuration is provided in the SPI Modes section.

To avoid data corruption and inadvertent write operations during power-up, a power-

on-reset (POR) circuit is included. The logic inside the device is held reset while VCC is

less than the POR threshold voltage, VWI – all operations are disabled, and the device

does not respond to any instruction. Moreover, the device ignores the following instruc-

tions until a time delay of tPUW has elapsed after the moment that VCC rises above the

VWI threshold:

• WRITE ENABLE

• PAGE PROGRAM

• DUAL INPUT FAST PROGRAM

• PROGRAM OTP

• SUBSECTOR ERASE

• SECTOR ERASE

• BULK ERASE

• WRITE STATUS REGISTER

• WRITE to LOCK REGISTER

However, the correct operation of the device is not guaranteed if, by this time, VCC is still

below VCC.min. No WRITE STATUS REGISTER, PROGRAM, or ERASE instruction should

be sent until:

•tPUW after VCC has passed the VWI threshold

•tVSL after VCC has passed the VCC,min level

If the time, tVSL, has elapsed, after VCC rises above VCC,min, the device can be selected

for READ instructions even if the tPUW delay has not yet fully elapsed.

VPPH must be applied only when VCC is stable and in the VCC,min to VCC,max voltage

range.

M25PX80 Serial Flash Embedded Memory

Power-Up/Down and Supply Line Decoupling

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Figure 28: Power-Up Timing

VCC

VCC,min

VWI

RESET state

of the

device

Chip selection not allowed

PROGRAM, ERASE, and WRITE commands are rejected by the device

tVSL

tPUW

Time

READ access allowed Device fully

accessible

VCC,max

After power-up, the device is in the following state:

• Standby power mode (not the deep power-down mode)

• Write enable latch (WEL) bit is reset

• Write in progress (WIP) bit is reset

• Write lock bit = 0

• Lock down bit = 0

Normal precautions must be taken for supply line decoupling to stabilize the VCC sup-

ply. Each device in a system should have the VCC line decoupled by a suitable capacitor

close to the package pins; generally, this capacitor is of the order of 100 nF.

At power-down, when VCC drops from the operating voltage to below the POR threshold

voltage VWI, all operations are disabled and the device does not respond to any instruc-

tion.

Note: If power-down occurs while a WRITE, PROGRAM, or ERASE cycle is in progress,

some data corruption may result.

M25PX80 Serial Flash Embedded Memory

Power-Up/Down and Supply Line Decoupling

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Maximum Ratings and Operating Conditions

Caution: Stressing the device beyond the absolute maximum ratings may cause perma-

nent damage to the device. These are stress ratings only and operation of the device be-

yond any specification or condition in the operating sections of this datasheet is not

recommended. Exposure to absolute maximum rating conditions for extended periods

may affect device reliability.

Table 12: Absolute Maximum Ratings

Symbol Parameter Min Max Units Notes

TSTG Storage temperature –65 150 °C

TLEAD Lead temperature during soldering — See note °C 1

VIO Input and output voltage (with respect to

ground)

–0.6 VCC+0.6 V

VCC Supply voltage –0.6 4.0 V

VPP FAST PROGRAM / ERASE voltage –0.2 10.0 V 2

VESD Electrostatic discharge voltage (Human Body

model)

–2000 2000 V 3

Notes: 1. The TLEAD signal is compliant with JEDEC Std J-STD-020C (for small body, Sn-Pb or Pb as-

sembly), the Micron RoHS compliant 7191395 specification, and the European directive

on Restrictions on Hazardous Substances (RoHS) 2002/95/EU.

2. Avoid applying VPPH to the W#/VPP pin during the BULK ERASE operation.

3. The VESD signal: JEDEC Std JESD22-A114A (C1 = 100 pF, R1 = 1500 Ω, R2 = 500 Ω).

Table 13: Operating Conditions

Symbol Parameter Min Max Unit

VCC Supply voltage 2.3 3.6 V

Supply voltage (automotive grade 6 and grade 3) 2.7 3.6 V

VPPH Supply voltage on VPP pin 8.5 9.5 V

TAAmbient operating temperature (device grade 6) –40 85 °C

Ambient operating temperature (device grade 3) –40 125 °C

Table 14: Data Retention and Endurance

Parameter Condition Min Max Unit

PROGRAM and ERASE cycles Grade 3; Autograde 6; Grade

100,000 – Cycles per sector

Data Retention at 55°C 20 – years

M25PX80 Serial Flash Embedded Memory

Maximum Ratings and Operating Conditions

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Electrical Characteristics

Table 15: Power Up Timing Specifications

Symbol Parameter Min Max Units

tVSL VCC[MIN] to S# LOW 30 – µs

tPUW Time delay to WRITE command 1 10 ms

VWI Write Inhibit voltage 1.5 2.1 V

Note: 1. These parameters are characterized only.

Table 16: DC Current Specifications

Symbol Parameter Test Condition

Device Grade 6 Device Grade 3

UnitsMin Max Min Max

ILI Input leakage current – – ±2 – ±2 µA

ILO Output leakage current – – ±2 – ±2 µA

ICC1 Standby current S# = VCC, VIN = VSS or VCC – 50 – 100 µA

ICC2 Deep power-down current S# = VCC, VIN = VSS or VCC – 10 – 100 µA

ICC3 Operating current (READ) C = 0.1VCC / 0.9VCC at 75MHz,

DQ1 = open

– 12 – 12 mA

C = 0.1VCC / 0.9VCC at 33MHz,

DQ1 = open

– 4 – 4 mA

Operating current

(DUAL OUTPUT FAST READ)

C = 0.1VCC / 0.9VCC at 75MHz,

DQ1 = open

– 15 – 15 mA

ICC4 Operating current

(PAGE PROGRAM)

S# = VCC – 15 – 15 mA

Operating current

(DUAL INPUT FAST PROGRAM)

S# = VCC – 15 – 15 mA

ICC5 Operating current

(WRITE STATUS REGISTER)

S# = VCC – 15 – 15 mA

ICC6 Operating current

(SECTOR ERASE)

S# = VCC – 15 – 15 mA

ICC7 Operating current

(BULK ERASE)

S# = VCC – 15 – 15 mA

Table 17: DC Voltage Specifications

Symbol Parameter Test Conditons Min Max Units

VIL Input LOW voltage – –0.5 0.3VCC V

VIH Input HIGH voltage – 0.7VCC VCC+0.4 V

VOL Output LOW voltage IOL = 1.6mA – 0.4 V

VOH Output HIGH voltage IOL = –100µA VCC–0.2 – V

Note: 1. All specifications apply to both device grade 6 and device grade 3.

M25PX80 Serial Flash Embedded Memory

Electrical Characteristics

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AC Characteristics

In the following AC specifications, output HIGH-Z is defined as the point where data

out is no longer driven; however, this is not applicable to the M25PX64 device.

Table 18: AC Measurement Conditions

Symbol Parameter Min Max Unit

CLLoad capacitance 30 30 pF

Input rise and fall times – 5 ns

Input pulse voltages 0.2VCC 0.8VCC V

Input timing reference voltages 0.3VCC 0.7VCC V

Output timing reference voltages VCC / 2 VCC / 2 V

Figure 29: AC Measurement I/O Waveform

Input and output

timing reference levels

Input levels

0.8VCC

0.2VCC

0.7VCC

0.3VCC

0.5VCC

Table 19: Capacitance

Symbol Parameter Test condition Min Max Unit Notes

CIN/OUT Input/output capacitance (DQ0/DQ1) VOUT = 0 V – 8 pF 1

CIN Input capacitance (other pins) VIN = 0 V – 6 pF

Note: 1. Values are sampled only, not 100% tested, at TA=25°C and a frequency of 33MHz.

M25PX80 Serial Flash Embedded Memory

AC Characteristics

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Table 20: AC Specifications (75MHz)

Symbol Alt. Parameter Min Typ Max Unit Notes

fCfCClock frequency for all commands (except READ) D.C. – 75 MHz

fR– Clock frequency for READ command D.C. – 33 MHz

tCH tCLH Clock HIGH time 6 – – ns 2

tCL tCLL Clock LOW time 6 – – ns 2

tCLCH – Clock rise time (peak to peak) 0.1 – – V/ns 3, 4

tCHCL – Clock fall time (peak to peak) 0.1 – – V/ns 3, 4

tSLCH tCSS S# active setup time (relative to C) 5 – – ns

tCHSL S# not active hold time (relative to C) 5 – – ns

tDVCH tDSU Data In setup time 2 – – ns

tCHDX tDH Data In hold time 5 – – ns

tCHSH – S# active hold time (relative to C) 5 – – ns

tSHCH – S# not active setup time (relative to C) 5 – – ns

tSHSL tCSH S# deselect time 80 – – ns

tSHQZ tDIS Output disable time – – 8 ns 3

tCLQV tVClock LOW to output valid under 30 pF – – 8 ns

Clock LOW to output valid under 10 pF – – 6 ns

tCLQX tHO Output hold time 0 – – ns

tHLCH – HOLD# setup time (relative to C) 5 – – ns

tCHHH – HOLD# hold time (relative to C) 5 – – ns

tHHCH – HOLD# setup time (relative to C) 5 – – ns

tCHHL – HOLD# hold time (relative to C) 5 – – ns

tHHQX tLZ HOLD# to output LOW-Z – – 8 ns 3

tHLQZ tHZ HOLD# to output HIGH-Z – – 8 ns 3

tWHSL – WRITE PROTECT setup time 20 – – ns 5

tSHWL – WRITE PROTECT hold time 100 – – ns 5

tVPPHSL – Enhanced program supply voltage HIGH (VPPH) to S#

LOW

200 – – ns 6

tDP – S# HIGH to DEEP POWER-DOWN mode – – 3 μs 3

tRDP – S# HIGH to STANDBY mode – – 30 μs 3

tW– WRITE STATUS REGISTER cycle time – 1.3 15 ms

tPP – PAGE PROGRAM cycle time (256 bytes) – 0.8 5 ms 7

0.9 7, 10

tPP – PAGE PROGRAM cycle time (n bytes) – int(n/8)

× 0.025

5 ms 7

0.9 7, 8, 10

tPP – PROGRAM OTP cycle time (64 bytes) – 0.2 5 ms 7

0.9 7, 10

tSSE – SUBSECTOR ERASE cycle time – 70 150 ms

tSE – SECTOR ERASE cycle time – 0.6 3 s

M25PX80 Serial Flash Embedded Memory

AC Characteristics

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Table 20: AC Specifications (75MHz) (Continued)

Symbol Alt. Parameter Min Typ Max Unit Notes

tBE – BULK ERASE cycle time – 8 80 s

Notes: 1. Applies to the entire table: the AC specification values for 75MHz operations shown

here are allowed only on the VCC range 2.7V - 3.6V. Typical values are given for TA =

25°C.

2. The tCH and tCL signal values must be greater than or equal to 1/fC.

3. The tCLCH, tCHCL, tSHQZ, tHHQX, tHLQZ, tDP, and tRDP signal values are guaranteed by charac-

terization, not 100% tested in production.

4. The tCLCH and tCHCL signals clock rise and fall time values are expressed as a slew-rate.

5. The tWHSL and tSHWL signal values are only applicable as a constraint for a WRITE STATUS

6. The tVPPHSL signal value for VPPH should be kept at a valid level until the program or

erase operation has completed and its result (success or failure) is known. Avoid apply-

ing VPPH to the W/VPP pin during the BULK ERASE operation.

7. To obtain optimized timings (tPP) when programming consecutive bytes with the PAGE

PROGRAM command, use one sequence including all the bytes versus several sequences

of only a few bytes (1 is less than or equal to n is less than or equal to 256).

8. int(A) corresponds to the upper integer part of A. For example, int(12/8) = 2, int(32/8) =

4 int(15.3) =16.

9. OE# may be delayed by up to tELQV - tGLQV after CE#’s falling edge without impact to

tELQV.

10. Specified values applicable for production parts with date-code 346 or higher (Novem-

ber 2013 and later).

Table 21: AC Specifications (50 MHz)

Symbol Alt. Parameter Min Typ Max Unit Notes

fCfCClock frequency for commands (See note) D.C. – 50 MHz 2

fR– Clock frequency for READ command D.C. – 25 MHz

tCH tCLH Clock HIGH time 9 – – ns 3

tCL tCLL Clock LOW time 9 – – ns 3

tCLCH – Clock rise time (peak to peak) 0.1 – – V/ns 4, 5

tCHCL – Clock fall time (peak to peak) 0.1 – – V/ns 4, 5

tSLCH tCSS S# active setup time (relative to C) 5 – – ns

tCHSL — S# not active hold time (relative to C) 5 – – ns

tDVCH tDSU Data in setup time 2 – – ns

tCHDX tDH Data in hold time 5 – – ns

tCHSH – S# active hold time (relative to C) 5 – – ns

tSHCH – S# not active setup time (relative to C) 5 – – ns

tSHSL tCSH S# deselect time 100 – – ns

tSHQZ tDIS Output disable time – – 8 ns 4

tCLQV tVClock LOW to output valid – – 8 ns

tCLQX tHO Output hold time 0 – – ns

tHLCH – HOLD# setup time (relative to C) 5 – – ns

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AC Characteristics

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Table 21: AC Specifications (50 MHz) (Continued)

Symbol Alt. Parameter Min Typ Max Unit Notes

tCHHH – HOLD# hold time (relative to C) 5 – – ns

tHHCH – HOLD# setup time (relative to C) 5 – – ns

tCHHL – HOLD# hold time (relative to C) 5 – – ns

tHHQX tLZ HOLD# to output LOW-Z – – 8 ns 4

tHLQZ tHZ HOLD# to output HIGH-Z – – 8 ns 4

tWHSL – WRITE PROTECT setup time 20 – – ns 6

tSHWL – WRITE PROTECT hold time 100 – – ns 6

tDP – S# HIGH to DEEP POWER-DOWN mode – – 3 μs 4

tRES1 – S# HIGH to STANDBY mode without electronic signature

read

– – 30 μs 4

tRES2 – S# HIGH to STANDBY mode with electronic signature

read

– – 30 μs 4

Notes: 1. Applies to the entire table: the AC specification values for 50MHz operations are al-

lowed on the VCC range 2.3V - 2.7V and 2.7V - 3.6V. Typical values are given for TA =

25°C.

2. READ DATA BYTES at HIGHER SPEED, PAGE PROGRAM, SECTOR ERASE, BLOCK ERASE,

DEEP POWER-DOWN, READ ELECTRONIC SIGNATURE, WRITE ENABLE/DISABLE, READ ID,

READ/WRITE STATUS REGISTER

3. The tCH and tCL signals must be greater than or equal to 1/fC.

4. The tCLCH, tCHCL, tSHQZ, tHHQX, tHLQZ, tDP, tRES1, and tRES2 signal values are guaranteed by

characterization, not 100% tested in production.

5. The tCLCH and tCHCLsignals clock rise and fall time values are expressed as a slew-rate.

6. The tWHSL and tSHWLsignals are only applicable as a constraint for a WRITE STATUS REGIS-

TER command when SRWD bit is set at 1.

M25PX80 Serial Flash Embedded Memory

AC Characteristics

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Figure 30: Serial Input Timing

DQ0

MSB IN

DQ1

tDVCH

high impedance

LSB IN

tSLCH

tCHDX

tCHCL

tCLCH

tSHCH

tSHSL

tCHSHtCHSL

Figure 31: Write Protect Setup and Hold during WRSR when SRWD=1 Timing

DQ0

DQ1

high impedance

W#/VPP

tWHSL tSHWL

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AC Characteristics

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Figure 32: Hold Timing

tCHHL

tHLCH

tHHCH

tHHQXtHLQZ

DQ1

DQ0

HOLD#

tCHHH

Figure 33: Output Timing

DQ1

LSB OUT

DQ0 ADDRESS

LSB IN

tSHQZ

tCH

tCL

tQLQH

tQHQL

tCLQX

tCLQV

tCLQX

tCLQV

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AC Characteristics

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Figure 34: VPPH Timing

DQ0

VPP

VPPH

tVPPHSL

end of command

(identified by WIP polling)

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AC Characteristics

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Package Information

Figure 35: VFQFPN8 (MLP8) 6mm x 5mm

12°

0.20 TYP

0 MIN/

0.05 MAX

5.75 TYP

Pin one

indicator 1.27

TYP

4 +0.30

-0.20

0.60 +0.15

-0.10

0.85 +0.15

-0.05

0.40 +0.08

-0.05

3.40 ±0.20

0.10 MAX/

0 MIN

6 TYP

4.75 TYP

0.05

5 TYP

0.65 TYP

0.10 C B

0.10 C A

0.15 C B

0.10 C A B

0.15 C A

Note: 1. Drawing is not to scale.

M25PX80 Serial Flash Embedded Memory

Package Information

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Figure 36: SO8W 208 mils Body Width

10.05 MIN/

0.25 MAX

1.70 MIN/

1.91 MAX

1.78 MIN/

2.16 MAX

0.36 MIN/

0.48 MAX

5.08 MIN/

5.49 MAX

5.08 MIN/

5.49 MAX

7.70 MIN/

8.10 MAX

0º MIN/

10° MAX

0.15 MIN/

0.25 MAX

0.50 MIN/

0.80 MAX

1.27 TYP

0.10 MAX

Note: 1. Drawing is not to scale.

M25PX80 Serial Flash Embedded Memory

Package Information

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Figure 37: SO8N 150 mils Body Width

0.25mm

Gauge plane

0.10 MIN/

0.25 MAX 0.40 MIN/

1.27 MAX

0o MIN/

8o MAX

0.28 MIN/

0.48 MAX

0.17 MIN/

0.23 MAX

x 45°

0.25 MIN/

0.50 MAX

0.10 MAX

1.75 MAX/

1.27 TYP

1.04 TYP

1.25 MIN

3.90 ±0.10

6.00 ±0.20

4.90 ±0.10

Note: 1. Drawing is not to scale.

M25PX80 Serial Flash Embedded Memory

Package Information

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Device Ordering Information

Micron Serial NOR Flash devices are available in different configurations and densities.

Valid part numbers are at Micron’s part catalog (www.micron.com), and feature and

specification comparisons are at www.micron.com/products. Contact your sales repre-

sentative for devices not found. For more information on how to identify products and

top-side marking by the process identification letter, refer to technical note TN-12-24,

Serial Flash Memory Device Marking for the M25P, M25PE, M25PX, and N25Q Product

Families.

Table 22: Part Number Information Scheme

Part Number

Category Category Details Notes

Device type M25PX = Serial Flash memory, 4KB and 64KB erasable sectors, dual I/O

Density 80 = 8Mb (1Mb x 8-bit)

Security features – = No extra security 1

SO = OTP configurable

ST = OTP configurable plus protection at power-up

S = CFD programmed with UID

Operating voltage V = VCC = 2.3V to 3.6V (automotive parts available only in 2.7V to 3.6V)

Package MP = VFQFPN 6mm x 5mm (MLP8)

MW = SO8W (208 mils width)

MN = SO8N (150 mils width)

Grade 6 = Industrial temperature range: –40°C to 85°C. Device tested with standard test flow

(option A is not selected).

Device tested with high reliability certified test flow, if automotive grade option A is se-

lected.

3 = Automotive temperature range: –40°C to 125°C. Device tested with high reliability

certified test flow.

Plating technology P or G = RoHS compliant (G is not available for automotive commercial product)

Lithography B = 110nm, Fab 2 diffusion plant (Automotive only)

Blank = 110nm

Automotive grade A = Automotive –40°C to 85°C (device grade 6). Device tested with high reliability certi-

fied test flow.

Blank = Automotive –40°C to 125°C

Notes: 1. Secure options available upon customer request.

2. Micron strongly recommends the use of the Automotive Grade devices (AutoGrade 6

and Grade 3) for use in an automotive environment. The High Reliability Certified Flow

(HRCF) is described in the quality note QNEE9801.

M25PX80 Serial Flash Embedded Memory

Device Ordering Information

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Revision History

Rev. C – 1/2014

• Added tPP = 0.9ms for parts having date-code 346 or higher.

Rev. B – 3/2013

• Replaced SO8W package dimension figure

• Revised text at the beginning of Ordering Information

Rev. A – 11/2012

• Initial Micron release with rebrand

8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900

www.micron.com/productsupport Customer Comment Line: 800-932-4992

Micron and the Micron logo are trademarks of Micron Technology, Inc.

All other trademarks are the property of their respective owners.

This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.

Although considered final, these specifications are subject to change, as further product development and data characterization some-

times occur.

M25PX80 Serial Flash Embedded Memory

Revision History

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