© 2005 IXYS All rights reserved 1 - 4
VMM 90-09F
0521
IXYS reserves the right to change limits, test conditions and dimensions.
Phaseleg Configuration
Dual Power
HiPerFETTM Module
VDSS = 900 V
ID25 = 85 A
RDS(on) = 76 mΩΩ
ΩΩ
Ω
MOSFET T1 + T2
Symbol Conditions Maximum Ratings
VDSS TVJ = 25°C to 150°C 900 V
VGS ±20 V
ID25 TC = 25°C 85 A
ID80 TC = 80°C 65 A
IF25 (diode) TC = 25°C 85 A
IF80 (diode) TC = 80°C 65 A
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
RDSon VGS = 10 V; ID = ID80 76 mΩ
VGSth VDS = 20 V; ID = 30 mA 3 5 V
IDSS VDS = 0.8 • VDSS; VGS = 0 V; TVJ = 25°C 0.4 mA
TVJ = 125°C 1.5 mA
IGSS VGS = ±20 V; VDS = 0 V 1 µA
Qg960 nC
Qgs 225 nC
Qgd 430 nC
td(on) 150 ns
tr180 ns
td(off) 330 ns
tf140 ns
VF(diode) IF = 90 A; VGS = 0 V 1.1 1.6 V
trr (diode) IF = 90 A; -di/dt = 400 A/µs; VDS = 100 V 250 ns
RthJC 0.08 K/W
RthJS with heat transfer paste 0.12 K/W
Features
• HiPerFET TM technology
– low RDSon
– unclamped inductive switching (UIS)
capability
– dv/dt ruggedness
– fast intrinsic reverse diode
– low gate charge
• thermistor
for internal temperature measurement
• package
– low inductive current path
– screw connection to high current
main terminals
– use of non interchangeable
connectors for auxiliary terminals
possible
– Kelvin source terminals for easy drive
– isolated DCB ceramic base plate
Applications
• converters with high power density
and high switching speed for
– power supplies
– induction heating
VGS= 10 V; VDS = 450 V; ID = 50 A
VGS= 10 V; VDS = 0.5 • VDSS;
ID = ID80; RG = 0.47 Ω
3
1
2
8
9
11
10
6
7NTC
© 2005 IXYS All rights reserved 2 - 4
VMM 90-09F
0521
IXYS reserves the right to change limits, test conditions and dimensions.
Dimensions in mm (1 mm = 0.0394")
Optional accessories for modules
keyed twin plugs
(UL758, style 1385, CSA class 5851,
guide 460-1-1)
• Type ZY180L with wire length 350mm
– for pins 4 (yellow wire) and 5 (red wire)
– for pins 11 (yellow wire) and 10 (red wire)
• Type ZY180R with wire length 350mm
– for pins 7 (yellow wire) and 6 (red wire)
– for pins 8 (yellow wire) and 9 (red wire)
Temperature Sensor NTC
Symbol Conditions Characteristic Values
min. typ. max.
R25 T = 25°C 2200 Ω
B25/100 3560 K
Module
Symbol Conditions Maximum Ratings
TVJ -40...+150 °C
Tstg -40...+125 °C
VISOL IISOL ≤ 1 mA; 50/60 Hz 3600 V~
MdMounting torque (M6) 2.25 - 2.75 Nm
Terminal connection torque (M6) 4.5 - 5.5 Nm
Symbol Conditions Characteristic Values
min. typ. max.
Weight 250 g
© 2005 IXYS All rights reserved 3 - 4
VMM 90-09F
0521
IXYS reserves the right to change limits, test conditions and dimensions.
VDS
0246810
ID
0
20
40
60
80
0 5 10 15 20 25
0
20
40
60
80
100
120
25 50 75 100 125 150
0.5
1.0
1.5
2.0
2.5
234567
0
20
40
60
80
100
120
0 40 80 120 160 200
RDS(on)
norm.
0.8
1.2
1.6
2.0
2.4
0 4 8 12 16 20
0
50
100
150
200
6 V
5 V
4 V 4 V
5 V
4 V
5 V
ID = 90 A
TJ = 25°C
A
V
TJ = 25°C
VCE
V
ID
VGS = 9/8/7/6 V VGS = 9/8/7 V
A
A
ID
VDS
V
TJ = 125°C
VGS = 9/8/7/6 V
TJ = 25°C
TJ = 125°C
V
VGS
A
ID
TJ = 25°C
TJ = 125°C
VGS = 10 V
A
ID
VGS = 10 V
°C
TJ
ID = 45 A
RDS(on)
norm.
Fig. 1 Typical output characteristics Fig. 2 Typical transfer characteristics
Fig. 3 Typical output characteristics Fig. 4 Typical transfer characteristics
Fig. 5 Typical normalized RDSon versus IDFig. 6 Typical normalized RDSon versus TJ
© 2005 IXYS All rights reserved 4 - 4
VMM 90-09F
0521
IXYS reserves the right to change limits, test conditions and dimensions.
VSD
0.0 0.2 0.4 0.6 0.8 1.0
ID
0
40
80
120
160
200
0 20 40 60 80 100 120 140
0
20
40
60
80
100
t
0.001 0.01 0.1 1 10
RthJC
0.001
0.010
0.100
VDS
0 5 10 15 20 25 30 35
C
100
1000
10000
100000
Qg
0 200 400 600 800 1000 1200
VGS
0
4
8
12
16
Ciss
nC
VVDS = 500 V
ID = 45 A
IG = 40 mA
pF
V
f = 1MHz
Coss
Crss
A
ID
A
V°C
TC
K/W
s
TJ = 25°C
TJ = 125°C
Fig. 7 Typical turn-on gate charge characteristics Fig. 8 Typical capacitances
Fig. 9 Typical forward characteristics of diode Fig. 10 Continuous drain current
Fig. 11 Transient thermal resistance
