Samsung Semiconductor, Inc.
Product Selection Guide
September 2006
SAMSUNG SEMICONDUCTOR, INC.
TABLE OF CONTENTS
MEMORY AND ST ORA GE
DRAM
DDR3 SDRAM
DDR2 SDRAM
DDR SDRAM
SDRAM
RDRAM
MOBILE SDRAM
GRAPHICS DDR SDRAM
DRAM ORDERING INFORMATION
FLASH
NAND, OneNAND, NOR FLASH
NAND FLASH ORDERING INFORMATION
ASYNCHRONOUS SRAM
LOW-POWER SRAM
LOW-VOLTAGE AND LOW-POWER SRAM
MICRO-POWER AND LOW-VOLTAGE SRAM
HIGH DENSITY, LOW POWER (UtRAM)
HIGH-SPEED ASYNCHRONOUS FAST SRAM
ASYNCHRONOUS SRAM ORDERING INFORMATION
SYNCHRONOUS SRAM
SPB & FT SRAM
NtRAM
LATE-WRITE R-R SRAM
DDR / II / II+ SRAM
QDR / II / II+ SRAM
SYNCHRONOUS SRAM ORDERING INFORMATION
MULTI-CHIP PACKAGE
NAND/DRAM
NOR/SRAM and NOR/UtRAM
OneNAND/DRAM
NOR/DRAM
STORAGE
HARD DISK DRIVES
OPTICAL STORAGE SOLUTIONS
SECTION A PAGE
3a
3a-4a
4a-5a
6a-7a
7a
8a
8a
9a-11a
12a
13a
14a
14a
14a
15a
15a
16a
17a-18a
18a-19a
19a-20a
20a-22a
22a-23a
24a
25a
26a
26a
26a
27a
28a-29a
SYSTEM LSI
ASICs
ASIC ORDERING INFORMATION
LCD DRIVER ICs
LCD DRIVER IC ORDERING INFORMATION
MOBILE APPLICA TION PROCESSORS
CMOS IMAGE SENSORS
MICROCONTROLLERS
MICROCONTROLLER ORDERING INFORMATION
SERIAL EPROMS
SECTION B PAGE
3b – 5b
6b
7b – 8b
9b
10b
10b
11b-14b
15b
16b
TFT-LCD
SECTION C
MONITOR/INDUSTRIAL LCD PANELS
15", 17"
19"
20.1", 21.3"
22.0", 23.0", 24.0", 30.0"
LCD TV/A.V.
HD 23", 26",32", 40", 46"
FULL HD 40", 46”, 52”, 57”
MOBILE PHONES
MAIN DISPLAYS
MAIN + EXTERNAL DISPLAYS
INFORMATION DISPLAYS
40", 46", 57", 82"
DIGITAL IMAGING: ENTERTAINMENT
DSC/DVC/PHOTO PRINTERS/PMP/VOIP/GAMES
MOBILE AV
MINI PCS/CNS/CAR TVS/P-DVDS/
INDUSTRIAL APPLICA TIONS
PAGE
3c
3c
4c
4c
5c
5c
6c
6c
7c
8c
9c
DDR2 SDRAM REGISTERED MODULES Parity
Density Org Speed (Mbps) Part Number Register Rank Composition Package
512MB 64Mx72 400/533 M393T6553CZ3-C(CC/D5) N 1 (64M x8)*9 Lead-free
512MB 64Mx72 400/533/667 M393T6553CZA-C(CC/D5/E6) Y 1 (64M x8)*9 Lead-free
1GB 128Mx72 400/533 M393T2950CZ3-C(CC/D5) N 1 (128M x4)*18 Lead-free
1GB 128Mx72 400/533 M393T2953CZ3-C(CC/D5) N 2 (64M x8)*18 Lead-free
1GB 128Mx72 400/533/667 M393T2950CZA-C(CC/D5/E6) Y 1 (128M x4)*18 Lead-free
1GB 128Mx72 400/533/667 M393T2953CZA-C(CC/D5/E6) Y 2 (64M x8)*18 Lead-free
2GB 256Mx72 400/533 M393T5750CZ3-C(CC/D5) N 2 (128M x4)*36 Lead-free
2GB 256Mx72 400/533 M393T5660AZ3-C(CC/D5) N 1 (256M x4)*18 Lead-free
2GB 256Mx72 400/533 M393T5663AZ3-C(CC/D5) N 2 (128M x8)*18 Lead-free
2GB 256Mx72 400/533/667 M393T5750CZA-C(CC/D5/E6) Y 2 (128M x4)*36 Lead-free
2GB 256Mx72 400/533/667 M393T5660AZA-C(CC/D5/E6) Y 1 (256M x4)*18 Lead-free
2GB 256Mx72 400/533/667 M393T5663AZA-C(CC/D5/E6) Y 2 (128M x8)*18 Lead-free
4GB 512Mx72 400/533 M393T5168AZ0-C(CC/D5) N 2 st.(512M x4)*18 Lead-free
4GB 512Mx72 400/533/667 M393T5166AZA-C(CC/D5/E6) Y 2 st.(512M x4)*18 Lead-free
NOTES: 00=Intel AMB 01=IDT AMB Voltage for AMB:1.5V Voltage for DRAM:1.8V Module Height=1.2"
DDR2 SDRAM FULLY BUFFERED MODULES
Density Org Speed (Mbps) Part Number Rank Composition Package
512MB 64Mx72 533 M395T6553CZ4-CD5(00/10) 1 (64M x8)*9 Lead-free
512MB 64Mx72 667 M395T6553CZ4-CE6(00/10) 1 (64M x8)*9 Lead-free
1GB 128Mx72 533 M395T2953CZ4-CD5(00/10) 2 (64M x8)*18 Lead-free
1GB 128Mx72 667 M395T2953CZ4-CE6(00/10) 2 (64M x8)*18 Lead-free
2GB 256Mx72 533 M395T5750CZ4-CD5(00/10) 2 (128M x4)*36 Lead-free
2GB 256Mx72 667 M395T5750CZ4-CE6(00/10) 2 (128M x4)*36 Lead-free
4GB 512Mx72 533 M395T5166AZ4-CD5(00/10) 2 st. (512M x4)*18 Lead-free
4GB 512Mx72 533 M395T5166AZ4-CE6(00/10) 2 st. (512M x4)*18 Lead-free
NOTES: 00=Intel AMB 01=IDT AMB Voltage for AMB:1.5V Voltage for DRAM:1.8V Module Height=1.2"
A
Section
MEMORY AND ST ORA GE
3a
DDR3 / DDR2 SDRAM
SAMSUNG SEMICONDUCTOR, INC.
SEPTEMBER 2006 BR-06-ALL-001
DDR3 SDRAM COMPONENTS Package
Density Org Speed (Mbps) Part Number Package Dimension
512Mb 128M x4 800/1066/1333 K4B510446E-ZC(E7/F8/G9) 82ball FBGA 10x11.5mm
512Mb 64M x8 800/1066/1333 K4B510846E-ZC(E7/F8/G9) 82ball FBGA 10x11.5mm
512Mb 32M x16 800/1066/1333 K4B511646E-ZC(E7/F8/G9) 100ball FBGA 10x11.5mm
1Gb 256M x4 800/1066/1333 K4B1G0446C-ZC(E7/F8/G9) 94ball FBGA 11x18mm
1Gb 128M x8 800/1066/1333 K4B1G0846C-ZC(E7/F8/G9) 94ball FBGA 11x18mm
1Gb 64M x16 800/1066/1333 K4B1G1646C-ZC(E7/F8/G9) 112ball FBGA 11x18mm
NOTES: E7=DDR3-800 (5-5-5) F8 = DDR3-1066 (7-7-7) G9=DDR3-1333 (8-8-8) Voltage: 1.5V
DDR3 SDRAM UNBUFFERED MODULES
Density Org Speed (Mbps) Part Number Rank Composition Package
256MB 32Mx64 800/1066/1333 M378B3374EZ0-C(E7/F8/G9) 1 512Mb(32M x16) * 4 RoHS
512MB 64Mx64 800/1066/1333 M378B6573EZ0-C(E7/F8/G9) 1 512Mb(64M x8) * 8 RoHS
512MB 64Mx64 800/1066/1333 M378B6474CZ0-C(E7/F8/G9) 1 1Gb(64M x16) * 4 RoHS
1GB 128Mx64 800/1066/1333 M378B2973EZ0-C(E7/F8/G9) 2 512Mb(64M x8) * 16 RoHS
1GB 128Mx64 800/1066/1333 M378B2873CZ0-C(E7/F8/G9) 1 1Gb(128M x8) * 8 RoHS
2GB 256Mx64 800/1066/1333 M378B5673CZ0-C(E7/F8/G9) 2 1Gb(128M x8) * 16 RoHS
NOTES: E7=DDR3-800 (5-5-5) F8 = DDR3-1066 (7-7-7) G9=DDR3-1333 (8-8-8) Voltage: 1.5V
A
Section MEMORY AND ST ORA GE
4a
DDR2 / DDR SDRAM
SAMSUNG SEMICONDUCTOR, INC. SEPTEMBER 2006
BR-06-ALL-001
DDR SDRAM 1U DIMM MODULES: REGISTERED Component # Banks
Density Org Speed (Mbps) Composition Part Number Package Module Notes
512MB 64Mx72 333/400 (64Mx8)*9 M312L6523DZ3 - CB3/CCC FBGA 1 Pb-free
512MB 64Mx72 333/400 (64Mx8)*9 M312L6523CZ3 - CB3/CCC FBGA 1 Pb-free
1GB 128Mx72 333/400 (128Mx4)*18 M312L2920CZ3 -CB3/CCC FBGA 1 Pb-free
2GB 256Mx72 266 (St. 256Mx4)*18 M312L5628CU0 - CB0 TSOP 2 Pb-free
2GB 256Mx72 333/400 (128Mx4)*36 M312L5720CZ3-CB3/CCC FBGA 2 Pb-free
4GB 512Mx72 266/333 (St. 512Mx4)*18 M312L5128AU0-CB0/CB3 TSOP 2 Pb-free
4GB 512Mx72 400 (St. 512Mx4)*18 M312L5128AU1-CCC TSOP 2 Pb-free
NOTES: B0 = DDR266 (133MHz @ CL=2.5) A2 = DDR266 (133MHz @ Cl=2) B3 = DDR333 (166MHz @ CL=2.5) CC = DDR400 (200MHz @ CL=3)
Type: 184-pin
DDR2 SDRAM COMPONENTS Package
Density Org Speed (Mbps) Part Number Package Dimension
512Mb 128M x4 400/533/667 K4T51043QC-ZC(CC/D5/E6) 60ball FBGA 10x11mm
512Mb 64M x8 400/533/667/800 K4T51083QC-ZC(CC/D5/E6/E7) 60ball FBGA 10x11mm
512Mb 32M x16 400/533/667 K4T51163QC-ZC(CC/D5/E6) 84ball FBGA 11x13mm
1Gb 256M x4 400/533/667 K4T1G044QA-ZC(CC/D5/E6) 68ball FBGA 11x18mm
1Gb 128M x8 400/533/667 K4T1G084QA-ZC(CC/D5/E6) 68ball FBGA 11x18mm
1Gb 64M x16 400/533/667 K4T1G164QA-ZC(CC/D5/E6) 84ball FBGA 11x18mm
NOTES: CC=DDR2-400 (3-3-3) D5 = DDR2-533 (4-4-4) E6=DDR2-667 (5-5-5) E7=DDR2-800 (5-5-5) Voltage: 1.8V
DDR2 SDRAM UNBUFFERED MODULES
Density Org Speed (Mbps) Part Number Rank Composition Package
256MB 32Mx64 400/533/667/800 M378T3354CZ3-C(CC/D5/E6E7) 1 (32M x16)*4 Lead-free
512MB 64Mx64 400/533/667/800 M378T6553CZ3-C(CC/D5/E6/E7) 1 (64M x8)*8 Lead-free
1GB 128Mx64 400/533/667/800 M378T2953CZ3-C(CC/D5/E6E7) 2 (64M x8)*16 Lead-free
2GB 256Mx64 400/533/667 M378T5663AZ3-C(CC/D5/E6) 2 (128M x8)*16 Lead-free
NOTES: CC=PC2-3200 (DDR2-400 @ CL=3) D5 = PC2-4200 (DDR2-533 @ CL=4) E6=PC2-5300 (DDR2-667 @ CL=5) E7=PC2-6400 (DDR2-800 @ CL=5) Voltage: 1.8V
Module Height =1.2"
DDR2 DRAM SODIMM MODULES
Density Org Speed (Mbps) Part Number Rank Composition Package
256MB 32Mx64 400/533/667 M470T3354CZ3-C(CC/D5/E6) 1 (32M x16)*4 Lead-free
512MB 64Mx64 400/533/667 M470T6554CZ3-C(CC/D5/E6) 2 (32M x16)*8 Lead-free
1GB 128Mx64 400/533/667 M470T2953CZ3-C(CC/D5/E6) 2 (64M x8)*16 Lead-free
1GB 128Mx64 400/533/667 M470T2864AZ3-C(CC/D5/E6) 2 (64M x16)*8 Lead-free
2GB 256Mx64 400/533/667 M470T5669AZ0-C(CC/D5/E6) 2 st.(256M x8)*8 Lead-free
NOTES: CC=PC2-3200 (DDR2-400 @ CL=3) D5 =PC2-4200 (DDR2-533 @ CL=4) E6=PC2-5300 (DDR2-667 @ CL=5) Voltage: 1.8V Module Height=1.2"
5a
A
Section
MEMORY AND ST ORA GE
DDR SDRAM
SAMSUNG SEMICONDUCTOR, INC.
SEPTEMBER 2006 BR-06-ALL-001
DDR SDRAM COMPONENTS
Density Org Speed (Mbps) Part Number Package Notes
256M 64Mx4 266 K4H560438H-UC(L)B0 66 pin TSOP Pb-free
256M 64Mx4 333/400 K4H560438H-ZC(L)CC/B3 60 ball FBGA Pb-free
256M 32Mx8 333/400 K4H560838H-UC(L)B3/CCC 66 pin TSOP Pb-free
256M 32Mx8 333/400 K4H560838H-ZC(L)B3/CCC 60 ball FBGA Pb-free
256M 16Mx16 333/400 K4H561638H-UC(L)/B3/CCC 66 pin TSOP Pb-free
256M 16Mx16 333/400 K4H561638H-ZC(L)B3/CCC 60 ball FBGA Pb-free
512M 128Mx4 266 K4H510438C-UC(L)B0 66 pin TSOP Pb-free
512M 128Mx4 266 K4H510438D-UC(L)B0 66 pin TSOP Pb-free
512M 128Mx4 333/400 K4H510438C-ZC(L)B3/CCC 60 ball FBGA Pb-free
512M 128Mx4 333/400 K4H510438D-ZC(L)B3/CCC 60 ball FBGA Pb-free
512M 64Mx8 266/333/400 K4H510838C-UC(L)B0/B3/CCC 66 pin TSOP Pb-free
512M 64Mx8 333/400 K4H510838C-ZC(L)B3/CCC 60 ball FBGA Pb-free
512M 64Mx8 333/400 K4H510838D-UC(L)B3/CCC 66 pin TSOP Pb-free
512M 32Mx16 333/400 K4H511638C-UC(L)B3/CCC 66 pin TSOP Pb-free
512M 32Mx16 333/400 K4H511638C-ZC(L)B3/CCC 60 ball FBGA Pb-free
512M 32Mx16 333/400 K4H511638D-UC(L)B3/CCC 66 pin TSOP Pb-free
1Gb 256Mx4 266/333/400 K4H1G0438A-UCB0/B3/CCC 66 pin TSOP Pb-free
1Gb 128Mx8 266/333/400 K4H1G0838A-UCB0/B3/CCC 66 pin TSOP Pb-free
2Gb 25MX4 *2 333 K4H2G0638A-UCB3000 66 pin TSOP Pb-free
NOTES: B0 = DDR266 (133MHz @ CL=2.5) A2 = DDR266 (133MHz @ Cl=2) B3 = DDR333 (166MHz @ CL=2.5) CC = DDR400 (200MHz @ CL=3)
DDR SDRAM DIMM MODULES: UNBUFFERED
Density Org Speed (Mbps) Composition Part Number Notes
512MB 64MX64 333/400 (64M x8) *8 M368L6523CUS-CB3/CCC Pb-free
512MB 64MX64 333/400 (64M x8) *8 M368L6523DUS-CB3/CCC Pb-free
512MB 64Mx72 333/400 (64M x 8)*9 M381L6523CUM-CB3/CCC Pb-free
512MB 64Mx72 333/400 (64M x 8)*9 M381L6523DUM-CB3/CCC Pb-free
1GB 128Mx64 333/400 (64M x 8)*16 M368L2923CUN-B3/CCC Pb-free
1GB 128Mx64 333/400 (64M x 8)*16 M368L2923DUN-CB3/CCC Pb-free
1GB 128Mx72 333/400 (64M x 8)*18 M381L2923CUM-CB3/CCC Pb-free
1GB 128Mx72 333/400 (64M x 8)*18 M381L2923DUM-CB3/CCC Pb-free
NOTES: B0 = DDR266 (133MHz @ CL=2.5) A2 = DDR266 (133MHz @ Cl=2) B3 = DDR333 (166MHz @ CL=2.5) CC = DDR400 (200MHz @ CL=3)
Type: 184-pin Package:TSOP components Voltage: 2.5V
DDR DRAM SODIMM MODULES
Density Org Speed (Mbps) Composition Part Number Notes
512MB 64Mx64 333 (32M x 16)*4 M470L3224CU0 -C(L)B3 Pb-free
512MB 64Mx64 333 (32M x 16)*4 M470L6524DU0-CB300 Pb-free
1GB 128MX64 333 (64M x 8)*16 M470L2923BN0 - C(L)B3
1GB 128MX64 333 (64M x 8)*16 M470L2923DV0-CB300 Pb-free
NOTES: B0 = DDR266 (133MHz @ CL=2.5) A2 = DDR266 (133MHz @ Cl=2) B3 = DDR333 (166MHz @ CL=2.5) CC = DDR400 (200MHz @ CL=3)
Type: 200-pin, Double Sided Height(in): 1.25
A
Section MEMORY AND ST ORA GE
6a
SDRAM
SAMSUNG SEMICONDUCTOR, INC. SEPTEMBER 2006
BR-06-ALL-001
1U SDRAM DIMM MODULES, PC133 / PC100 COMPLIANT: REGISTERED
LOW-PROFILE DIMMs (1.2-INCH HEIGHT) # Banks
Density Org Speed Composition Part Number Module Refresh Comments
128MB** 16Mx72 PC133 (16x8)*9 M390S1723ITU - C7A00 1 8K
256MB 32Mx72 PC133 (32Mx8)*9 M390S3253HUU - C7A00 1 8K
512MB 64Mx72 PC133 (64Mx4)*18 M390S6450HUU - C7A00 2 8K stacked
1GB 128Mx72 PC133 (St.128Mx4)*18 M390S2858ETU - C7A00 2 8K
1GB 128Mx72 PC133 (128Mx4)*18 M390S2950DUU - C7A00 2 8K
2GB 256Mx72 PC133 (St.128Mx4)*18 M390S5658DUU - C7A00 2
NOTES: St. = Stacked components Type: 168 pin, Double sided Package:TSOP Components Voltage: 3.3V
**Die rev. change - 128Mb component F-die to I-die stacked, avail Q204
SDRAM SODIMM MODULES Height # Banks
Density Org Speed Composition Part Number (in) Module
128MB** 16Mx64 PC133 (8Mx16)*8 M464S1724ITS-L7A00 1.15 1
256MB 32Mx64 PC133 (16Mx16)*8 M464S3254HUS-L7A00 1.25 1
256MB 32Mx64 PC133 (32Mx16)*4 M464S3354DUS-C(L)7A 1.25 1
512MB 64Mx64 PC133 (32Mx16)*8 M464S6554DUS-C(L)7A 1.18 1
512MB 64Mx64 PC133 (64Mx8)*16 M464S6453HV0-C75/L7500 1.25 2
NOTES: DS = Double-Sided L = Commercial Temp., Low Power Interface:SSTL-2 # Banks: 4 Latency: CL6 Refresh: 8K/32ms
** Die rev. change - 128Mb component F-die to I-die
SDRAM DIMM MODULES, PC133 COMPLIANT: UNBUFFERED # Banks
Density Org Speed (Mbps) Composition Part Number Module
128MB** 16Mx64 PC133 128M: (16Mx8)*8 M366S1723ITS-C7A00 1
128MB 16Mx64 PC133 256M: (16Mx16)*4 M366S1654HUS-C7A00 1
128MB** 16Mx72 PC133 128M: (16Mx8)*9 M374S1723ITS-C7A00 1
128MB 16Mx72 PC133 256M:(16Mx16)*5 M374S1654ETS- C7A00 1
128MB** 32Mx64 PC133 128M: (16Mx8)*16 M366S3323ITS- C7A00 2
128MB** 32Mx72 PC133 128M: (16Mx8)*18 M374S3323ITS-C7A00 2
256MB 32Mx64 PC133 256M: (32Mx8)*8 M366S3253HUS-C7A00 1
256MB 32Mx64 PC133 256M: (16Mx16)*8 M366S3254HUS-C7A00 1
256MB 32Mx64 PC133 256M: (32Mx8)*8 M366S3253US-C7A00 1
512MB 64Mx64 PC133 256M: (32Mx8)*16 M366S6453HUS-C7A00 2
1GB 128Mx64 PC133 512M: (64Mx8)*16 M366S2953DUS-C7A00 2
NOTES: Type: 168 pin Package:TSOP components Voltage: 3.3V
**Die rev. change - 128Mb component F-die to I-die
7a
A
Section
MEMORY AND ST ORA GE
SDRAM
SAMSUNG SEMICONDUCTOR, INC.
SEPTEMBER 2006 BR-06-ALL-001
RIMM™MODULES
Density Org Speed (Mbps) # of Devices Part Number Component Comments
128MB ECC x18 800/1066Mbps 4 MR18R1624EG0-CM8/T9 288Mb lead-free only
256MB ECC x18 800/1066Mbps 8 MR18R1628EG0-CM8/T9 288Mb lead-free only
512MB ECC x18 800/1066Mbps 16 MR18R162GEG0-CM8/T9 288Mb lead-free only
128MB NON-ECC x16 800/1066Mbps 4 MR16R1624EG0-CM8/T9 256Mb lead-free only
256MB NON-ECC x16 800/1066Mbps 8 MR16R1628EG0-CM8/T9 256Mb lead-free only
512MB NON-ECC x16 800/1066Mbps 16 MR16R162GEG0-CM8/T9 512Mb lead-free only
144MB NexMod x18 800/1066Mbps 4 MN18R1624EF0-CT9 288Mb lead-free only
288MB NexMod x18 800/1066Mbps 8 MN18R1628EF0-CT9 288Mb lead-free only
576MB NexMod * x18 800/1066Mbps 8 MN18R3268AEF0-CT9 576Mb lead-free only
NOTES: * In EOL Process
RDRAM COMPONENTS
Density Org Speed (Mbps) Part Number Refresh Package Notes
128M x16 800/1066 K4R271669F-SCK8/S8 16K/32ms 54ball FBGA
288M x18 800/1066 K4R881869E-GCM8/T9 16K/32ms 92ball FBGA lead-free only
576M* x18 1066 K4R761869A-GCT9 32K/32ms 92ball FBGA lead-free only
NOTES: Voltage: 2.5 v
* In EOL Process
SDRAM COMPONENTS
Density Org Speed (Mbps) Part Number Refresh Pkg TSOP Comments
64Mb** 8Mx8 133 K4S640832K-UC(75)000 4K 54
64Mb** 4Mx16 133/143/166 K4S641632K-UC(L)(75/70/60)000 4K 54
64Mb** 2Mx32 143/166/200 K4S643232H-UC(70/60/50)000 4K 86
128Mb** 16Mx8 133 K4S280832I-UC(L)(75)000 4K 54
128Mb** 8Mx16 133/166 K4S281632I-UC(L)(75/60)000 4K 54
256Mb 64Mx4 133 K4S560432H-UC(L)(75)000 8K 54
256Mb 32Mx8 133 K4S560832H-UC(L)(75)000 8K 54
256Mb 16Mx16 133/166 K4S561632H-UC(L)(75/60)000 8K 54
512Mb 128Mx4 133 K4S510632D-UC(L)(75)000 8K 54 stacked
512Mb 64Mx8 133 K4S510732D-UC(L)(75)000 8K 54 stacked
512Mb 128Mx4 133 K4S510432D-UC(L)(75)000 8K 54
512Mb 64Mx8 133 K4S510832D-UC(L)(75)000 8K 54
512Mb 32Mx16 133 K4S511632D-UC(L)(75)000 8K 54
1Gb 256Mx4 133 K4S1G0632D-UC(L)(75)000 8K 54 stacked
NOTES:
1 L = Commercial Temp., Low Power
2 # Banks:4
3 Package:TC = TSOP; UC = Lead Free
4 Voltage: 3.3V
5 Speed:PC133 (133MHz CL=3/PC100 CL2)
6 For Ind.Temp.,check with SSI Marketing
* In EOL process
**Die rev. change - 64Mb H-die to K-die, 128Mb F-die to I-die
MOBILE SDRAM COMPONENTS # Pins
Density Org Part Number Refresh Power TSOP/BGA
64Mb 4Mx16 K4M641633K-(1)(2)(3)(4) 4K 3.0V FBGA-54balls
64Mb 4Mx16 K4M64163LK-(1)(2)(3)(4) 4K 2.5V FBGA-54balls
64Mb 4Mx16 K4M64163PK-(1)(2)(3)(4) 4K 1.8V FBGA-54balls
64Mb 2MX32 K4S643233H-(1)(2)(3)(4) 4K 3.0V FBGA-90balls
64Mb 2MX32 K4S64323LH-(1)(2)(3)(4) 4K 2.5V FBGA-90balls
128Mb 8MX16 K4M281633H-(1)(2)(3)(4) 4K 3.0V FBGA-54balls
128Mb 8MX16 K4M28163LH-(1)(2)(3)(4) 4K 2.5V FBGA-54balls
128Mb 8MX16 K4M28163PH-(1)(2)(3)(4) 4K 1.8V FBGA-54balls
128Mb 4MX32 K4M283233H-(1)(2)(3)(4) 4K 3.0V FBGA-90balls
128Mb 4MX32 K4M28323LH-(1)(2)(3)(4) 4K 2.5V FBGA-90balls
128Mb 4MX32 K4M28323PH-(1)(2)(3)(4) 4K 1.8V FBGA-90balls
256Mb 16Mx16 K4M561633G-(1)(2)(3)(4) 8K 3.0V FBGA-54balls
256Mb 16Mx16 K4M56163LG-(1)(2)(3)(4) 8K 2.5V FBGA-54balls
256Mb 16Mx16 K4M56163PG-(1)(2)(3)(4) 8K 1.8V FBGA-54balls
256Mb 16Mx16 K4X56163PG-(1)(2)(3)(4) 8K 1.8V FBGA-60balls
256Mb 8Mx32 K4M563233G-(1)(2)(3)(4) 8K 3.0V FBGA-90balls
256Mb 8Mx32 K4M56323LG-(1)(2)(3)(4) 8K 2.5V FBGA-90balls
256Mb 8Mx32 K4M56323PG-(1)(2)(3)(4) 8K 1.8V FBGA-90balls
256Mb 8Mx32 K4X56323PG-(1)(2)(3)(4) 8K 1.8V FBGA-90balls
512Mb 32Mx16 K4M511633C-(1)(2)(3)(4) 8K 3.0V FBGA-54balls
512Mb 32Mx16 K4M51163LC-(1)(2)(3)(4) 8K 2.5V FBGA-54balls
512Mb 32Mx16 K4M51163PC-(1)(2)(3)(4) 8K 1.8V FBGA-54balls
512Mb 32Mx16 K4X51163PC-(1)(2)(3)(4) 8K 1.8V FBGA-60balls
512Mb 16Mx32 K4M513233C-(1)(2)(3)(4) 8K 3.0V FBGA-90balls
512Mb 16Mx32 K4M51323LC-(1)(2)(3)(4) 8K 2.5V FBGA-90balls
512Mb 16Mx32 K4M51323PC-(1)(2)(3)(4) 8K 1.8V FBGA-54balls
512Mb 16Mx32 K4X51323PC-(1)(2)(3)(4) 8K 1.8V FBGA-54balls
A
Section MEMORY AND ST ORA GE
8a
Mobile SDRAM/Graphics DDR SDRAM
SAMSUNG SEMICONDUCTOR, INC. SEPTEMBER 2006BR-06-ALL-001
GRAPHICS DDR SDRAM COMPONENTS
Type Density Org Die Part Number Package VDD/VDDQ Speed Bin (MHz) Remarks
GDDR4 512Mb 16Mx32 E K4U52324Q 136 FBGA 1.8/1.8V 1100/1200/1400 CS now
GDDR3 512Mb 16Mx32 C K4J52324Q 136 FBGA 1.8/1.8V 500/600/700 EOL'd
136 FBGA 2.0/2.0V 800/900/1000 EOL'd
512Mb 16Mx32 E K4J52324Q 136 FBGA 1.8/1.8V 700/800 CS now
136 FBGA 1.9/1.9V 900/1000 CS now
256Mb 8Mx32 G K4J55323Q 136 FBGA 1.8/1.8V 700/800
136 FBGA 2.0/2.0V 900/1000
GDDR2 512Mb 32Mx16 C K4N51163Q 84 FBGA 1.8/1.8V 300/350/400
256Mb 16Mx16 G K4N56163Q 84 FBGA 1.8/1.8V 350/400
84 FBGA 2.0/2.0V 450/500
GDDR1 256Mb 16Mx16 H K4D551638 66 TSOPII 2.35~2.7V 200/250
128Mb 4Mx32 G K4D26323Q 144 FBGA 1.8/1.8V 300/350 EOL'd
K4D263238 144 FBGA 2.5/2.5V 300/350 EOL'd
I K4D263238 144 FBGA 2.5/2.5V 200/250
K4D263238 100 TQFP 2.5/2.5V 200/250
8Mx16 I K4D261638 66 TSOPII 2.5/2.5V 200/250 CL-tRCD-tRP 3-3-3 for 200Mhz
NOTES: * clock cycle time ** all products are 4 banks
Part No.Suffix 07 08 09 1A 11 12 14 16 20 22 25 2A 33 40 50
Description 0.71ns 0.83ns 0.90ns 1ns 1.11ns 1.25ns 1.429ns 1.667ns 2.0 ns 2.2 ns 2.5 ns 2.86 NS 3.3 ns 4.0 ns 5.0 ns
(1400MHz) (1200MHz) (1100MHz) (1000MHz) (900MHz) (800MHz) (700MHz) (600MHz) (500MHz) (450MHz) (400MHz) (350MHz) (300MHZ) (250MHz) (200MHz)
F/H: Smaller 90balls FBGA Mono
Y/P: 54balls CSP DDP
M/E: 90balls FBGA DDP
(2) Temp & Power:
C : Commercial(-25 ~ 70’C), Normal
L : Commercial, Low, i-TCSR
F : Commercial, Low, i-TCSR
& PASR & DS
E : Extended(-25~85’C), Normal
N : Extended, Low, i-TCSR
G : Extended, Low, i-TCSR & PASR & DS
I : Industrial(-40~85’C), Normal
P : Industrial, Low
H : Industrial, Low, i-TCSR & PASR & DS
(3)~(4) Speed:
Mobile-SDRAM
60: 166MHz, CL 3
75: 133MHz, CL 3
80: 125MHz, CL 3
1H: 105MHz, CL 2
1L: 105MHz, CL 3
15: 66MHz, CL 2 & 3
Mobile-DDR
C3: 133MHz, CL 3
C2: 100MHz, CL 3
C0: 66MHz, CL 3
NOTES:
(1) Package: Leaded / Lead Free
G/A: 52balls FBGA Mono
R/B: 54balls FBGA Mono
X /Z: 54balls BOC Mono
J /V: 60(72)balls FBGA Mono 0.5pitch
L /F: 60balls FBGA Mono 0.8pitch S /
D: 90balls FBGA
Monolithic (11mm x 13mm)
9a
A
Section
MEMORY AND ST ORA GE
DRAM Ordering Information
SAMSUNG SEMICONDUCTOR, INC.
SEPTEMBER 2006 BR-06-ALL-001
DRAM ORDERING INFORMATION
K 4 X X X X X X X X - X X X X X X X
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
1. Memory (K)
2. DRAM:4
3. Small Classification
A:Advanced Dram Technology
B:DDR3 SDRAM
D: DDR SGRAM
E: EDO
F: FP
H: DDR SDRAM
J: GDDR3 SDRAM
K: Mobile SDRAM PEA
L: Mobile L2RAM
M: Mobile SDRAM
N: DDR SGRAM II
R: Direct RDRAM
S: SDRAM
T: DDR SDRAM II∫
U: GDDR4 SDRAM
V: Mobile DDR SDRAM PEA
X: Mobile DDR SDRAM
Y: XDR DRAM
Z:V alue Added DRAM
°∞PEA: Power Efficient Address
4~5. Density, Refresh
111: 1G, 64K/16ms
15: 16M, 1K/16ms
16: 16M, 2K/32ms
17: 16M, 4K/64ms
26: 128M, 4K/32ms
27: 128M, 16K/32ms
28: 128M, 4K/64ms
32: 32M, 2K/32ms
40: 4M, 512/8ms
41: 4M, 1K/16ms
44: 144M, 16K/32ms
50: 512M, 32K/16ms
51: 512M, 8K/64ms
52: 512M, 8K/32ms
54: 256M, 16K/16ms
55: 256M, 4K/32ms
56: 256M, 8K/64ms
57: 256M, 16K/32ms
58: 256M, 8K/32ms
62: 64M, 2K/16ms
64: 64M, 4K/64ms
66: 64M, 8K/64ms
68: 768M, 8K/64ms
72: 72M, 8K/32ms
76: 576M, 32K/32ms
80: 8M, 2K/32ms
88: 288M, 16K/32ms
89: 288M, 8K/32ms
1G: 1G, 8K/64ms
2G: 2G, 8K/64ms
4G: 4G, 8K/64ms
2A: 128M, 4K/64ms with TCSR
5A: 256M, 8K/64ms with TCSR
6A: 64M, 4K/64ms with TCSR
6~7. Organization
01: x1 02: x2 03:x2
(Including x1)
04: x4 05: x4 (2CS)
06: x4 Stack (Flexframe)
07: x8 Stack (Flexframe)
08: x8 09: x9 15: x16 (2CS)
16: x16 17: x16 (Including x8/ x4)
18: x18 30: x32 (2CS, 2CKE)
31: x32 (2CS) 32: x32 36: x36
A8: x8 Stack (70-mono)
8. Bank
1: 1Bank 2: 2Bank 3: 4Bank
4: 8Bank 5: 16Bank 6: 32Bank
9. Interface,VDD,VDDQ
0: NONE, NONE, NONE
1:TTL, 5.0V, 5.0V
2: LVTTL, 3.3V, 3.3V
3: LVTTL, 3.0V, 3.0V
4: LVTTL, 2.5V, 2.5V
5: SSTL(LP), 1.8V, 1.8V
6: SSTL, 1.5V, 1.5V
7: SSTL-2, 3.3V, 2.5V
8: SSTL-2, 2.5V, 2.5V
9: RSL, 2.5V, 2.5V
A: SSTL, 2.5V, 1.8V
H: SSTL-2 DLL, 3.3V, 2.5V
J: LVTTL, 3.0V, 1.8V
L: LVTTL, 2.5V, 1.8V
M: LVTTL, 1.8V, 1.5V
N: LVTTL, 1.5V, 1.5V
P: LVTTL, 1.8V, 1.8V
Q: SSTL, 1.8V, 1.8V
R: SSTL-2, 2.8V, 2.8V
S: SSTL-2, 2.2V, 1.8V
U: DRSL, 1.8V, 1.2V
Y: SSTL(LP), 2.5V, 2.5V
10. Generation
M: 1st Generation
A: 2nd Generation
B: 3rd Generation
C: 4th Generation
D: 5th Generation
E: 6th Generation
F: 7th Generation
G: 8th Generation
H: 9th Generation
I: 10th Generation
J: 11th Generation
K: 12th Generation
Y: Partial DRAM(2nd)
Z: Partial DRAM (for RAMOSTAK Product)
11.“ ----”
12. Package
- Advanced DRAM T echnology
G:WBGA L:TSOP2-400F(LF)
T:TSOP2 Z: BOC(LF)
- DDR SDRAM
J:TSOP2-400(LF, DDP) T:TSOP2-400
K:TSOP2-400(DDP) U:TSOP2-400(LF)
G: BOC,WBGA Z: BOC(LF)
P: BOC(DDP) Q: ISM
N: STSOP2 V: STSOP2(LF)
S: POP(DDP) X: POP(LF, DDP)
- DDR SDRAM II
G: BOC Z: BOC(LF)
S: BOC(Smaller) Y: BOC(Smaller, LF)
R:WLP
- DDR3 SDRAM
G: BOC Z: BOC(LF)
- DDR SGRAM
E: FBGA(LF, DDP) G : FBGA
J: FBGA(DDP) V: FBGA(LF)
P: FBGA(LLDDP) M: FBGA(1DQS)
N: FBGA(1DQS,LF) H: BOC
L:TSOP2-400(LF) T:TSOP2-400
Q:TQFP U:TQFP(LF)
A
Section MEMORY AND ST ORA GE
10a
DRAM Ordering Information
SAMSUNG SEMICONDUCTOR, INC. SEPTEMBER 2006BR-06-ALL-001
DRAM ORDERING INFORMATION
K 4 X X X X X X X X - X X X X X X X
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
- DDR SGRAM II
G: FBGA, BOC Z: BOC (LF)
- GDDR3 SDRAM
A: 136-FBGA, BOC B:136-FBGA, BOC(LF)
G: FBGA, BOC V: FBGA, BOC(LF)
- Direct RDRAM
F:WBGA G:WBGA(LF)3)
H:WBGA(LF, B/ L 320) J: MWBGA(LF)
M: µBGA®packages1) (M)2)
N: µBGA®packages
P: MWBGA R: 54-WBGA
S: 54-µBGA®packages T: 54-WBGA(LF)
- EDO
B: SOJ-300 J: SOJ-400
N: STSOP2
T:TSOP2-400 U:TSOP2-400(LF)
F:TSOP2-300 H:TSOP2-300(LF)
- FP
B: SOJ-300 J: SOJ-400
F:TSOP2-300 H:TSOP2-300(LF)
N: STSOP2
T:TSOP2-400 U:TSOP2-400(LF)
- Mobile SDRAM
1: MCP 6: MCP(LF)
2: 90-FBGA(DDP) 3: 90-FBGA(DDP,LF)
4: 96-FBGA 5: 96-FBGA(LF)
R: 54-CSP B: 54-CSP(LF)
J:WBGA V:WBGA(LF)
M: FBGA(MCP) E: FBGA(LF, MCP)
F: Smaller 90 FBGA
H: Smaller 90 FBGA(LF)
Y: 54-CSP(DDP) P: 54-CSP(LF, DDP)
T:TSOP2-400 Q: ISM
S: 90-FBGA D: 90-FBGA(LF)
Mobile SDRAM PEA
F: Smaller 90-FBGA
H: Smaller 90-FBGA(LF)
S: 90-FBGA D: 90-FBGA(LF)
Mobile DDR SDRAM
1: MCP 6: MCP(LF)
4: 96-FBGA 5: 96-FBGA(LF)
7: 90-FBGA 8: 90-FBGA(LF)
F:WBGA(LF, 0.8MM) J:WBGA
L:WBGA(0.8MM) T:TSOP2
V:WBGA(LF) Q: ISM
S: POP X: POP(LF, DDP)
Mobile DDR SDRAM PEA
6: POP MONO(LF) 7: 90-FBGA
8: 90-FBGA(LF) F: 60-FBGA(LF)
L: 60-FBGA Q: ISM
S: POP(DDP) X: POP(LF, DDP)
XDR DRAM
J: BOC(LF) P: BOC
SDRAM
1: MCP 2: 90-FBGA(DDP)
3: 90-FBGA(DDP, LF) 4: 96-FBGA
5: 96-FBGA(LF) A: 52-CSP(LF)
G: CSP(except 54 Pin) R: 54-CSP
B: 54-CSP(LF) D: 90-FBGA(LF)
E: 90-FBGA (LF, MCP) S: 90-FBGA
M: 90-FBGA(MCP) F: Smaller 90FBGA
H: Smaller 90FBGA(LF) K:TSOP2-400(DDP)
N: STSOP2 V: STSOP2(LF)
T:TSOP2-400 U:TSOP2-400(LF)
Y: 54-CSP(DDP) P: 54-CSP(LF, DDP)
X: BOC Z: BOC(LF)
DRAM COMMON
C: CHIP BIZ W:WAFER
(M): Mirror (LF): Lead Free
13.Temp, Power
- COMMON (Temp, Power)
0: NONE, NONE
A:Automotive, Normal
C: Commercial, Normal
J: Commercial, Medium
L: Commercial, Low
F: Commercial, Low, PASR & TCSR
B: Commercial, Super Low
R: Commercial, Super Low, PASR & TCSR
K: Commercial, Reduced
E: Extended, Normal
N: Extended, Low
G: Extended, Low, PASR & TCSR
U: Extended, Super Low
S: Extended, Super Low, PASR & TCSR
X: Extra Extend, Normal
I: Industrial, Normal
P: Industrial, Low
H: Industrial, Low, PASR & TCSR
D: Industrial, Super Low
T: Industrial, Super Low, PASR & TCSR
- WAFER,CHIP BIZ Level Classification
0: NONE, NONE
1: DC test only
2: DC test,WBI
3: DC , several A C test,WBI
14~15. Speed (Wafer/Chip Biz/BGD: 00)
- DDR SDRAM
A0: 10ns@CL2 A1: 8ns
A2: 7.5ns@CL2
AA :7.5ns@CL2,TRCD2,TRP2
B0: 7.5ns@CL2.5 B3: 6ns@CL2.5
B4: 5ns@CL2.5 C3: 6ns@CL3
C4: 5ns@CL3 C5: 3.75ns@CL3
CA: 5.5ns@CL3
CC: 5ns@CL3,TRCD3,TRP3 CD: 4ns@CL3
CE: 5ns@CL3,TRCD3,TRPS3(2.5V)
D4: 5ns@CL4 DS: Daisychain
M0: 10ns@CL1.5
<Only DDR SDRAM TPB code>
S0: SH BIN(TPB) V0: SH 2/ 2/ 2 BIN
W0: SH 3/ 3/ 3 BIN X0: Uniq. BIN
Y0: SH 3/ 4/ 4 BIN
- DDR SDRAM II
C4: 5ns@CL3 C5: 3.75ns@CL3
CC: 5ns@CL3,TRCD3,TRP3
CF: 3.75ns@CL3(1.9V)
D4: 5ns@CL4 D5: 3.75ns@CL4
D6: 3.0ns@CL4 D7: 2.5ns@CL4
DH: 3ns@CL4(1.9V)
DS: Daisychain Sample E4: 5ns@CL5
E5: 3.75ns@CL5 E6: 3.0ns@CL5
E7: 2.5ns@CL5 F6: 3.0ns@CL6
F7: 2.5ns@CL6
- DDR3 SDRAM
E7: 2.5ns@CL5 F6: 3.0ns@CL6
F7: 2.5ns@CL6
A
Section
MEMORY AND ST ORA GE
11a
SAMSUNG SEMICONDUCTOR, INC.
SEPTEMBER 2006 BR-06-ALL-001
DRAM ORDERING INFORMATION
K 4 X X X X X X X X - X X X X X X X
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
- EDO & FP (tRAC)
40: 40ns 45: 45ns
50: 50ns 60: 60ns
- Direct RDRAM (tCC, tRAC)
C6: 300MHz, 53.3ns w/ consumer PKG
C8: 400MHz, 45ns w/ consumer PKG
C9: 533MHz, 32ns w/ consumer PKG
G6: 300MHz(3.3ns), 53.3ns
K7: 356MHz(2.8ns), 45ns
K8: 400MHz(2.5ns), 45ns
M8: 400MHz(2.5ns), 40ns
M9: 533MHz(1.9ns), 35ns
N1: 600MHz(1.667ns), 32ns
N9: 533MHz(1.9ns), 32ns
P3: 667Mhz(1.5ns), 31ns
R6: 800Mhz(1.25ns), 27ns
S8: 400MHz, 45ns SC
S9: 533MHz(1.9ns), 35ns SC
T9: 533MHz(1.9ns), 32ns,tDAC 3
DS: Daisychain Sample
*SC (Short channel)
- Mobile SDRAM
15: 15ns@CL2 1H: 10ns@CL2
1L: 10ns@CL3 75: 7.5ns@CL3
80: 8ns@CL3
90: 9.0ns@CL3(12ns@CL2)
95: 9.5ns@CL3(12ns@CL2)
DP: Daisychain (PCB)
DS: Daisychain Sample
DY: Daisychain (Sanyo PCB)
- Mobile SDRAM PEA
1L: 10ns@CL3 60: 6ns@CL3
75: 7.5ns@CL3
90: 9.0ns@CL3(12ns@CL2)
- Mobile DDR SDRAM
C0: 15ns@CL3 C2: 10ns@CL3
C3: 7.5ns@CL3 C6: 6ns@CL3
CA: 9ns@CL3
DP: Daisychain (PCB)
DS: Daisychain
DY: Daisychain (Sanyo PCB)
- Mobile DDR SDRAM PEA
C3: 7.5ns@CL3 C6: 6ns@CL3
CA: 9ns@CL3
- Mobile L2RAM
L0: 100Mhz, CL3 L1: 133Mhz, CL3
L2: 166Mhz, CL4
- SDRAM (tCC: Default CL3)
10: 10ns, PC66 12: 12ns
15: 15ns
1H: 10ns@CL2, PC100 1L: 10ns,PC100
33: 3.3ns 40: 4ns
45: 4.5ns 50: 5ns
55: 5.5ns 56: 5.6ns
60: 6ns 67: 6.7ns
70: 7ns 74: 7.4ns
75: 7.5ns, PC133
7B: 7.5ns PC133, CL3,TRCD2,TRP2
7C: 7.5ns PC133, CL2,TRCD2,TRP2
80: 8ns 90: 9ns
96: 9.6ns
DP: Daisychain (PCB) DS: Daisychain
DY: Daisychain (Sanyo PCB)
< Only SDRAM TPB Code >
S0: 7.0ns BIN T0:5.5ns BIN
U0: 6.0ns BIN V0: 7.5ns BIN
W0: 8.0ns BIN G0: 5.6ns BIN
-DDR SGRAM (tCC: Default CL3)
20: 2.0ns 21: 2.1ns(475MHz)
22: 2.2ns(450MHz) 25: 2.5ns
30: 3ns 33: 3.3ns
35: 3.5ns 36: 3.6ns
3N 3.32ns(301MHz) 40: 4ns
45: 4.5ns 50: 5ns
55: 5.5ns 60: 6ns
70: 7ns 2A: 2.86ns(350MHz)
2B: 2.94ns(340MHz) 2C: 2.66ns(375MHz)
5A: 5ns@CL3(TRCD3,TRP3)
< Only SDRAM TPB Code>
S0: 4.0ns BIN
- DDR SGRAM II
12: 1.25ns 14: 1.429ns
15: 1.5ns (667MHz) 16: 1.667ns
18: 1.818ns 1K: 1.996ns
2A: 2.86ns(350MHz) 20: 2ns
22: 2.2ns 25: 2.5ns
30: 3.0ns 33: 3.3ns
37: 3.75ns
- GDDR3 SDRAM
11: 1.1ns 12: 1.25ns
14: 1.429ns 15: 1.5ns(667MHz)
16: 1.667ns 18: 1.818ns
20: 2.0ns 22: 2.2ns
25: 2.5ns 30: 3.0ns
33: 3.3ns 36: 3.6ns
40: 4.0ns 1A: 1.0ns
2A: 2.86ns
- GDDR4 SDRAM
15: 1.5ns(667MHz)
XDR DRAM
A2: 2.4Gbps, 36ns, 16Cycles
A3: 3.2Gbps, 27ns, 16Cycles
B3: 3.2Gbps, 35ns, 20Cycles
B4: 4.0Gbps, 28ns, 20Cycles
C3: 3.2Gbps, 35ns, 24Cycles
C4: 4.0Gbps, 28ns, 24Cycles
DS: Daisychain Sample
DRAM COMMON
00: NONE
16. Packing Type (16 digit)
Common to all products, except of Mask ROM
Divided into TAPE & REEL(In Mask ROM,divided into
TRAY,AMMO Packing Separately)
Type Packing Type New Marking
Component TAPE & REEL T
Other (Tray,Tube,Jar) 0 (Number)
Stack S
Component TRAY Y
(Mask ROM) AMMO PACKING A
Module MODULE TAPE & REEL P
MODULE Other Packing M
NOTES:
1) µgBGA® packages are registered trademarks of Tessera.
2) (M): Mirror
3) (LF): Lead Free
DRAM Ordering Information
SEPTEMBER 2006BR-06-ALL-001
NOR FLASH TSOP FBGA Block
Density Part Number Part Number Architecture Voltage Temperature Comments
16Mb K8D1716UTC-PI07 K8D1716UTC-FI07 Top 3.3V Industrial Dual Bank,Async
K801716UBC-PI07 K8D1716UBC-FI07 Bottom 3.3V Industrial Dual Bank,Async
32Mb K8D3216UTC-PI07 N/A Top 3.3V Industrial Dual Bank,Async
K8D3216UBC-PI07 N/A Bottom 3.3V Industrial Dual Bank,Async
N/A K8S3215ETE-SE7C Top 1.8V Industrial Mux'd Burst
64Mb K8D6316UTM-PI07 K8D6316UTM-DI07 Top 3.3V Industrial Dual Bank,Async
K8D6316UBM-PI07 K8D6316UBM-DI07 Bottom 3.3V Industrial Dual Bank,Async
N/A K8S6415ETB-DE7C Top 1.8V Extended Mux'd Burst
128Mb N/A K8S2815ETB-SE7C Top 1.8V Extended Mux'd Burst
256Mb N/A K8S5615ETA-SE7C Top 1.8V Extended Mux'd Burst
NOTE: All parts lead free
OneNAND™FLASH
Density Part Number Organization Package Voltage(V) Temperature Comments
128Mb KFG2816U1M-PIB0000 x16 48TSOP (12x20) 3.3V Industrial
KFG2816Q1M-DEB0000 x16 67 FBGA 1.8V Extended
KFG2816U1M-DIB0000 x16 (7x9) 3.3V Industrial
256Mb KFG5616Q1M-PEB0000 x16 48 TSOP 1.8V Extended No New Design
256Mb KFG5616U1A-PIB5000 x16 48TSOP (12x20) 3.3V Industrial
KFG5616Q1A-DEB5000 x16 67 FBGA 1.8V Extended
KFG5616U1A-DIB5000 x16 (7x9) 3.3V Industrial
512Mb KFG1216Q2A-DEB5000 x16 63 FBGA 1.8V Extended
KFG1216U2A-DIB5000 x16 (9.5x12) 3.3V Industrial
1Gb KFG1G16Q2M-DEB5000 x16 63 FBGA(10x13) 1.8V Extended No New Design
KFG1G16Q2A-DEB6000 x16 63 FBGA(10x13) 1.8V Extended
2Gb DDP KFH2G16Q2M-DEB5000 x16 63 FBGA (11x13) 1.8V Extended No New Design
2Gb mono KFG2G16Q2M-DEB6000 x16 63 FBGA (11x13) 1.8V Extended
4Gb QDP KFW4G16Q2M-DEB5000 x16 63 FBGA (11x13) 1.8V Extended No New Design
4Gb DDP KFN4G16Q2M-DEB8000 x16 63 FBGA (11x13) 1.8V Extended
NOTE: All parts lead free
A
Section MEMORY AND ST ORA GE
12a
Flash
SAMSUNG SEMICONDUCTOR, INC.
NAND FLASH DISCRETE COMPONENTS
TSOP BGA/LGA
Density Part Number Part Number Organization Voltage(V) Package Comments
SLC
256Mb K9F5608U0D-PCB K9F5608U0D-JIB x8 3.3V 48TSOP, 63FBGA
512Mb K9F1208U0B-PCB K9F1208U0B-JIB x8 3.3V 48TSOP, 63FBGA Best case for S/B long-term support
1Gb K9F1G08U0A-PCB K9F1G08U0A-JIB x8 3.3V 48TSOP, 63FBGA Moving to B-die in Q4'06
2Gb K9F2G08U0A-PCB K9F2G08U0A-IIB x8 3.3V 48TSOP, 52ULGA
4Gb K9F4G08U0A-PCB K9F4G08U0A-IIB x8 3.3V 48TSOP, 52ULGA
8Gb K9K8G08U0A-PCB K9K8G08U0A-IIB x8 3.3V 48TSOP, 52ULGA
16Gb K9WAG08U1A-PCB K9WAG08U1A-IIB x8 3.3V 48TSOP, 52TLGA
32Gb K9NBG08U5A-PCB N/A x8 3.3V DSP 48TSOP
MLC
8Gb K9G8G08U0M-PCB N/A x8 3.3V 48TSOP
16Gb K9LAG08U0M-PCB N/A x8 3.3V 48TSOP
32Gb K9HBG08U1M-PCB N/A x8 3.3V 48TSOP
NOTE: All parts lead free
SEPTEMBER 2006 BR-06-ALL-001
A
Section
MEMORY AND ST ORA GE
13a
NAND Flash Ordering Information
SAMSUNG SEMICONDUCTOR, INC.
NAND FLASH ORDERING INFORMATION
K 9 X X X X X X X X - X X X X X X X
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
1. Memory (K)
2. NAND Flash: 9
3. Small Classification (SLC: Single Level Cell, MLC:
Multi Level Cell, SM: SmartMedia, S/B: Small Block)
A: SLC + Muxed I/F Chip
B: Muxed I/F Chip
S: SLC Single SM
D: SLC Dual SM
Q: 4CHIP SM
T: SLC SINGLE (S/B)
E: SLC DUAL (S/B)
R: SLC 4DIE STACK (S/B)
F: SLC Normal
G: MLC Normal
K: SLC 2-Die Stack
W:SLC 4-Die Stack
J: Non-Muxed OneNAND
U: 2 STACK MSP
V: 4 STACK MSP
4~5. Density
12: 512M 16: 16M
28: 128M 32: 32M
40: 4M 56: 256M
64: 64M 80: 8M
1G: 1G 2G: 2G
4G: 4G 8G: 8G
00: NONE
6~7. Organization
00: NONE 08: x8
16: x16
8.Vcc
C: 5.0V(4.5V~5.5V)
D: 2.65V(2.4V~2.9V)
E: 2.3V~3.6V
Q: 1.8V(1.7V~1.95V)
T: 2.4V~3.0V
U: 2.7V~3.6V
V: 3.3V(3.0V~3.6V)
W:2.7V~5.5V,3.0V~5.5V
0: NONE
9. Mode
O: Normal
1: Dual nCE & Dual Rn/B
4: Quad nCE & Single RnB
A: Mask Option 1
10. Generation
M: 1st Generation
A: 2nd Generation
B: 3rd Generation
C: 4th Generation
D: 5th Generation
Y: Partial NAND(2nd)
Z: Partial NAND(1st)
M: 1st Generation
A: 2nd Generation
B: 3rd Generation
C: 4th Generation
D: 5th Generation
Y: Partial NAND(2nd)
Z: Partial NAND(1st)
11.“--”
12. Package
A: COB B:TBGA
C: CHIP BIZ D: 63-TBGA
E:TSOP1(LF,1217) F:WSOP1(LF)
G: FBGA H:TBGA(LF)
J: FBGA(LF) K:TSOP1(1217)
L: LGA M: tLGA
P:TSOP1(LF) Q:TSOP2(LF)
R:TSOP2-R S: SMARTMEDIA
T:TSOP2 V:WSOP
W:WAFER Y:TSOP1
13.Temp
C: Commercial I: Industrial
0: NONE
14. Bad Block
B: Include Bad Block
D: Daisychain Sample
L: 1~5 Bad Block
N: Ini.All Good,Add. 10 Blocks
S:All Good Block
0: NONE
15. NAND-Reserved
0: Reserved
16. Packing Type (16 digit)
Common to all products, except of Mask ROM
Divided into TAPE & REEL(In Mask ROM,divided into
TRAY,AMMO Packing Separately)
Type Packing Type New Marking
Component TAPE & REEL T
Other (Tray,Tube,Jar) 0 (Number)
Stack S
Component TRAY Y
(Mask ROM) AMMO PACKING A
Module MODULE TAPE & REEL P
MODULE Other Packing M
A
Section MEMORY AND ST ORA GE
14a
Asynchronous SRAM
SAMSUNG SEMICONDUCTOR, INC. SEPTEMBER 2006BR-06-ALL-001
LOW-POWER (5V) SRAM Operating Operating Standby Production
Density Part Number Organization Vcc (V) Speed(ns) Temp Current (mA) Current (uA) Package Status
8Mbit K6X8008C2B 1Mx8 4.5 - 5.5 55,70 C,I 50 50 TSOP2(44) EOL
K6X8016C3B 512x16 4.5 - 5.5 55,70 C,I 60 50 TSOP2(44) EOL
4Mbit K6X4016C3F 256x16 4.5 - 5.5 55,70 I,A 50 20,30 TSOP2(44) EOL
K6X4008C1F 512x8 4.5 - 5.5 55,70 I,A 40 20,30 32SOP,TSOP EOL
1Mbit K6T1008C2E 128x8 4.5 - 5.5 55,70 C,I 50 10 32DIP,32SOP,TSOP1(32) EOL
K6X1008C2D 128x8 4.5 - 5.5 55,70 I,A 35 15,25 32SOP,TSOP1(32) EOL
256Kbit K6T0808C1D 32x8 4.5 - 5.5 55,70 C,I 60 5 28SOP,TSOP1(28) EOL
K6X0808C1D 32x8 4.5 - 5.5 55,70 C,I 35 25 28SOP EOL
NOTE: Lead-free available upon request
LOW-VOLTAGE & LOW-POWER SRAM Operating Operating Standby Production
Density Part Number Organization Vcc (V) Speed (ns) Temp Current (mA) Current (uA) Package Status
8Mbit K6X8008T2B 1024Kx8 2.7 - 3.6 55,70 C,I 40 40 TSOP2(44) EOL
K6X8016T3B 512Kx16 2.7 - 3.6 55,70 C,I 45 40 TSOP2(44) EOL
4Mbit K6X4008T1F 512x8 2.7 - 3.6 70,85 I,A 30 20,30 32SOP,TSOP2(32) EOL
K6X4016T3F 256x16 2.7 - 3.6 70,85 I,A 40 20,30 TSOP2(44) EOL
1Mbit K6F1008U2C 128x8 2.7 - 3.3 55,70 I 2 0.5 32TSOP1 EOL
K6X1008T2D 128x8 2.7 - 3.6 70,85 I,A 25 10,20 32SOP,TSOP2(32) EOL
K6F1008V2C 128x8 3.0 - 3.6 55,70 I 3 0.5 25SOP1 EOL
MICRO-POWER & LOW-VOLTAGE SRAM Operating Operating Standby Production
Density Part Number Organization Vcc (V) Speed (ns) Temp Current (mA) Current (uA) Package Status
16Mbit K6F1616U6C 1x16 2.7 - 3.3 55,70 I 3 1 48-FBGA EOL, LTB due no later than 12/31/06
K6F1616R6C 1x16 1.65 - 2.2 70 I 3 1 48-FBGA EOL, LTB due no later than 12/31/06
8Mbit K6F8016R6B 512x16 1.65 - 2.2 70,85 I 3 1 48-TBGA EOL
K6F8016U6B 512x16 2.7 - 3.3 55,70 I 4 1 48-TBGA EOL
4Mbit K6F4008R2G 512Kx8 1.65 - 2.20 70,85 I 2 0.5 36TBGA EOL, LTB due no later than 12/31/06
K6F4008U2G 512Kx8 2.7 - 3.3 45,55,70 I 2 0.5 36TBGA EOL, LTB due no later than 12/31/06
K6F4016R4E 256Kx16 1.65 - 2.20 70,85 I 2 0.5 48TBGA EOL, LTB due no later than 12/31/06
K6F4016R6G 256Kx16 1.65 - 2.20 70,85 I 2 0.5 48TBGA EOL, LTB due no later than 12/31/06
K6F4016U4G 256Kx16 2.7 - 3.3 55,70 I 2 0.5 48TBGA EOL, LTB due no later than 12/31/06
K6F4016U6G 256Kx16 2.7 - 3.3 55,70 I 2 0.5 48TBGA EOL, LTB due no later than 12/31/06
2Mbit K6F2016U4E 128x16 2.7 - 3.3 55,70 I 2 0.5 48-TBGA EOL
K6F2016R4E 128x16 1.65 - 2.2 70,85 I 2 0.5 48-FBGA EOL
K6F2008U2E 256x8 2.7 - 3.3 55,70 I 2 0.5 32TSOP1 EOL
K6F2008V2E 256x8 3.0 - 3.6 55,70 I 3 0.5 32TSOP1 EOL
1Mbit K6F1016U4C 64x16 2.7 - 3.3 55,70 I 2 0.5 48-FBGA EOL
A
Section
MEMORY AND ST ORA GE
15a
Asynchronous SRAM
SAMSUNG SEMICONDUCTOR, INC.
SEPTEMBER 2006 BR-06-ALL-001
HIGH-SPEED (4Mbit) ASYNCHRONOUS FAST SRAM
Operating Operating Standby Production
Density Part Number Organization Vcc (V) Speed (ns) Temp Current (mA) Current (uA) Package Status
4Mbit K6R4016C1D 256Kx16 5 10 I 65, 55 20,5 44SOJ,44TSOP2, 48TBGA Mass Production
K6R4016V1D 256Kx16 3.3 10 I 80, 65 20, 5(1.2) 44SOJ, 44TSOP2,48TBGA Mass Production
K6R4004C1D 1Mx4 5 10, 12 I 65, 55 20,5 32 SOJ EOL
K6R4004V1D 1Mx4 3.3 8, 10 I 80,65 20, 5 32 SOJ EOL
K6R4008C1D 512Kx8 5 10 I 65, 55 20,5 36 SOJ,44 TSOP2 Mass Production
K6R4008V1D 512Kx8 3.3 10 I 80, 65 20, 5 36 SOJ,44 TSOP2 Mass Production
3Mbit K6R3024V1D 128x24 3.3 9, 10, 12 C,I 170,150,130 40,15 119PBGA EOL
1Mbit K6R1008V1D 128x8 3.3 8, 10, 12 C,I 170,150,130 20,5 32SOJ,32TSOP2 EOL
K6R1008C1D 128x8 5 10, 12, 15 C,I 170,150,130 20,5 32SOJ,32TSOP2 EOL
K6R1004V1D 256x4 3.3 8, 10, 12 C,I 170,150,130 20,5 32SOJ EOL
K6R1004C1D 256x4 5 10, 12, 15 C,I 170,150,130 20,5 32SOJ EOL
K6R1016V1D 64x16 3.3 8, 10, 12 C,I 170,150,130 20,5 44SOJ,44TSOP2,48TBGA EOL
K6R1016C1D 64x16 5 10, 12, 15 C,I 170,150,130 20,5 44SOJ,44TSOP2,48TBGA EOL
NOTE: Ordering Information: http://www.samsung.com/Products/Semiconductor/Support/Label_CodeInfo/Async_SRAM.pdf
UtRAM (High Density & Low Power) Operating Operating Standby Production
Density Part Number Organization Vcc (V) Speed (ns) Temp Current (mA) Current (uA) Package Status
32Mbit K1S321615M 2Mx16 3 100 E 20 150 48-TBGA EOL
K1S321611C 2Mx16 3 70 I 35 100 48-FBGA Mass Production
K1S32161CD 2Mx16 3 70 I 35 100 48-FBGA Mass Production
K1S32161BCD 2Mx16 1.8 70 I 35 100 48-FBGA Mass Production
K1S32161CD 2Mx16 3 70 E 35 100 48-TBGA Mass Production
16Mbit K1S161615M 1Mx16 3 70 I 20 70 48-TBGA EOL
K1S1616B1M 1Mx16 1.8 70 I 35 60 48-TBGA EOL
A
Section MEMORY AND ST ORA GE
16a
Asynchronous SRAM
Ordering Information
SAMSUNG SEMICONDUCTOR, INC. SEPTEMBER 2006BR-06-ALL-001
ASYNCHRONOUS SRAM ORDERING INFORMATION
K 6 X X X X X X X X - X X X X X X X
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
1. Memory (K)
2.Async SRAM: 6
3. Small Classification
E: Corner Vcc/Vss + Fast SRAM
F: fCMOS Cell + LPSRAM
H: High Speed(LPSRAM)
X: High V oltage(LPSRAM)
J: BICMOS
L: Poly Load Cell + LPSRAM
R: Center Vcc/Vss + Fast SRAM
T:TFT Cell + LPSRAM
4~5. Density
06: 64K 08: 256K 09: 512K
10: 1M 16: 16M 20: 2M
30: 3M 32: 32M 40: 4M
60: 6M 64: 64M 80: 8M
6~7. Organization
01: x1 04: x4 08: x8
16: x16 18: x18 24:x24
32: x32
8.Vcc
5: 1.5V C: 5.0V
Q:VDD 3.0V/VDDQ 1.8V
R: 1.65V~2.2V
S: 2.5V T: 2.7V~3.6V U: 3.0V
V: 3.3V W:2.2V~3.3V
9. Mode
1: CS Low Active
2: CS1, CS2 - Dual Chip Select Signal
3: Single Chip Select with /LB,/UB(tOE)
4: Single Chip Select with /LB,/UB(tCS)
5: Dual Chip Select with /LB,/UB(tOE)
6: Dual Chip Select with /LB,/UB(tCS)
7: I/Os Control with /BYTE
8: CDMA Function
9: Multiplexed Address
A: Mirror Chip Option
10. Generation
M: 1st Generation
A: 2nd Generation B: 3rd Generation
C: 4th Generation D: 5th Generation
E: 6th Generation F: 7th Generation
G: 8th Generation H: 9th Generation
11. " ----"
12. Package
A:TBGA(LF) B: SOP(LF)
C: CHIP BIZ D: DIP
E:TBGA F: FBGA
G: SOP H: BGA
J: SOJ K: SOJ(LF)
L:TSOP1-0813.4F(LF)
P:TSOP1-0820F(LF)
Q:TSOP2-400R(LF) R:TSOP-R
T:TSOP U:TSOP2-400(LF)
W:WAFER Z: UBGA
* Exception
- 1MFSRAM B-ver
32-SOJ-300 > S
28-SOJ-300 > S
- 512K/1M/2M/4M LPSRAM
32-TSOP1-0813.4F > Y
32-TSOP1-0813.4 > Y
32-TSOP1-0813.4R > N
- 4M LPSRAM
32-TSOP2-400F > V
32-TSOP2-400R > M
13. 1st Chip Speed
- COMMON (Temp,Power)
A:Automotive,Normal
B: Commercial,Low Low
C: Commercial,Normal
D: Extended,Low Low
E: Extended,Normal
F: Industrial,Low Low
I: Industrial,Normal
L: Commercial,Low
M: Military,Normal
N: Extended,Low
P: Industrial,Low
Q:Automotive,Low
R: Industrial,Super Low
T: Extended,Super Low
U: Commercial,Ultra Super Low
0: NONE,NONE
- WAFER, CHIP BIZ Level Division
0: NONE,NONE
1: Hot DC sort
2: Hot DC,selected AC sort
3: Cold/Hot DC,selected AC sort
14~15. Speed (
t
AA)
- fCMOS Cell + LPSRAM & Poly Load Cell +
LPSRAM & TFT Cell + LPSRAM
10: 100ns
12: 120ns
15: 150ns
25: 25ns(only fCMOS Cell)
30: 300ns
35: 35ns(except Poly Load Cell)
45: 45ns(except fCMOS Cell)
55: 55ns
60: 60ns(only fCMOS Cell)
70: 70ns
85: 85ns
90: 90ns(only fCMOS Cell)
DS: Daisychain Sample
- High Speed (LPSRAM)
20: 20ns 25: 25ns
- High Voltage (LPSRAM)
55: 55ns 70: 70ns 85: 85ns
- Corner Vcc/Vss + Fast SRAM
10: 10ns 12: 12ns 13: 13ns
15: 15ns 17: 17ns 20: 20ns
25: 25ns 30: 30ns 35: 35ns
45 :45ns
- BICMOS & Center Vcc/Vss + Fast SRAM
06: 6ns 08: 8ns 09: 9ns
10: 10ns 12: 12ns 13: 13ns
15: 15ns 17: 17ns 20: 20ns
25: 25ns
30: 30ns(only Center Vcc/Vss + Fast SRAM)
35: 35ns(only Center Vcc/Vss + Fast SRAM)
7A: 7.2ns(only BICMOS)
8A: 8.6ns(only BICMOS)
DS: Daisychain Sample
- Async SRAM COMMON
00: NONE
(Containing Wafer, CHIP BIZ, Exception code)
16. Packing Type (16 digit)
- Common to all products, except of Mask ROM
- Divided into TAPE & REEL(In Mask ROM,divided into
TRAY,AMMO Packing Separately)
Type Packing Type New Marking
Component TAPE & REEL T
Other (Tray,Tube,Jar) 0 (Number)
Stack S
Component TRAY Y
(Mask ROM) AMMO PACKING A
Module MODULE TAPE & REEL P
MODULE Other Packing M
A
Section
MEMORY AND ST ORA GE
17a
SAMSUNG SEMICONDUCTOR, INC.
SEPTEMBER 2006 BR-06-ALL-001
Synchronous SRAM
SPB & FT (36Mbit) SRAM
Part Operating Access Time Speed I/O Production
Number Organization Mode Vdd (V) tCD(ns)
t
CYC (MHz) Voltage (V) Package Status Comments
K7A323600M 1Mx36 SPB 3.3 2.6, 3.1, 4.0 250, 200, 138 3.3, 2.5 100TQFP (L / LF) EOL in Q1`07 2E1D
K7A321800M 2Mx18 SPB 3.3 2.6, 3.1, 4.0 250, 200, 138 3.3, 2.5 100TQFP (L / LF) EOL in Q1`07 2E1D
K7B323625M 1Mx36 SB 3.3 6.5, 7.5 133, 118 3.3, 2.5 100TQFP (L / LF) EOL in Q1`07 -
K7B321825M 2Mx18 SB 3.3 6.5, 7.5 133, 118 3.3, 2.5 100TQFP (L / LF) EOL in Q1`07 -
K7A323630C 1Mx36 SPB 3.3, 2.5 3.1 200 3.3, 2.5 100TQFP (LF(Lead Free) only) Q3`06 (E/S) 2E1D
K7A321830C 2Mx18 SPB 3.3, 2.5 3.1 200 3.3, 2.5 100TQFP (Lead Free only) Q3`06 (E/S) 2E1D
K7B323635C 1Mx36 SB 3.3, 2.5 7.5 118 3.3, 2.5 100TQFP (Lead Free only) Q3`06 (E/S) -
K7B321835C 2Mx18 SB 3.3, 2.5 7.5 118 3.3, 2.5 100TQFP (Lead Free only) Q3`06 (E/S) -
NOTES: 2E1D = 2-cycle Enable and 1-cycle Disable
NOTES: 200MHz could cover 167MHz, 133MHz speed option
SPB & FT (18Mbit) SRAM
Part Operating Access Time Speed I/O Production
Number Organization Mode Vdd (V) tCD(ns)
t
CYC (MHz) Voltage (V) Package Status Comments
K7A163630B 512Kx36 SPB 3.3, 2.5 2.6, 3.5 250, 167 3.3, 2.5 100TQFP (LF only from 2H`07) Mass Production 2E1D
K7A163631B 512Kx36 SPB 3.3, 2.5 3.1 200 3.3, 2.5 100TQFP (LF only from 2H`07) Mass Production 2E2D
K7A161830B 1Mx18 SPB 3.3,2.5 2.6, 3.5 250, 167 3.3, 2.5 100TQFP (LF only from 2H`07) Mass Production 2E1D
K7A161831B 1Mx18 SPB 3.3,2.5 3.1 200 3.3, 2.5 100TQFP (LF only from 2H`07) Mass Production 2E2D
K7B163635B 512Kx36 SB 3.3, 2.5 7.5 117 3.3, 2.5 100TQFP (LF only from 2H`07) Mass Production -
K7B161835B 1Mx18 SB 3.3, 2.5 7.5 117 3.3, 2.5 100TQFP (LF only from 2H`07) Mass Production -
NOTES: 2E1D = 2-cycle Enable and 1-cycle Disable 2E2D = 2-cycle Enable and 2-cycle Disable
NOTES: 250MHz could cover 200MHz speed option / 167MHz could cover 133MHz speed option
SPB & FT (8Mbit) SRAM
Part Operating Access Time Speed I/O Production
Number Organization Mode Vdd (V) tCD(ns)
t
CYC (MHz) Voltage (V) Package Status Comments
K7A803600B 256x36 SPB 3.3 3.5,3.8 167,138 3.3,2.5 100TQFP (LF only from 2H`07) Mass Production 2E1D
K7A803609B 256x36 SPB 3.3 2.6 250 3.3,2.5 100TQFP (LF only from 2H`07) Mass Production 2E1D
K7A801800B 512x18 SPB 3.3 3.5,3.8 167,138 3.3,2.5 100TQFP (LF only from 2H`07) Mass Production 2E1D
K7A801809B 512x18 SPB 3.3 2.6 250 3.3,2.5 100TQFP (LF only from 2H`07) Mass Production 2E1D
K7B803625B 256x36 SB 3.3 6.5,7.5 133,117 3.3,2.5 100TQFP (LF only from 2H`07) Mass Production -
K7B801825B 512x18 SB 3.3 6.5,7.5 133,117 3.3,2.5 100TQFP (LF only from 2H`07) Mass Production -
NOTES: 2E1D = 2-cycle Enable and 1-cycle Disable Recommended speed options for SPB are 250MHz and 167MHz
2E2D = 2-cycle Enable and 2-cycle Disable Recommended access speed option for SB is 6.5ns
SPB & FT (4Mbit) SRAM
Part Operating Access Time Speed I/O Production
Number Organization Mode Vdd (V) tCD(ns)
t
CYC (MHz) Voltage (V) Package Status Comments
K7A403600B 128Kx36 SPB 3.3 3.5, 4.0 167, 138 3.3, 2.5 100TQFP (LF only from 2H`07) Mass Production 2E1D
K7A401800B 256Kx18 SPB 3.3 3.5, 4.0 167, 138 3.3, 2.5 100TQFP (LF only from 2H`07) Mass Production 2E1D
K7A403609B 128Kx36 SPB 3.3 2.4, 2.8 250, 200 3.3, 2.5 100TQFP (LF only from 2H`07) Mass Production 2E1D
K7A401809B 256Kx18 SPB 3.3 2.4, 2.8 250, 200 3.3, 2.5 100TQFP (LF only from 2H`07) Mass Production 2E1D
K7A403200B 128Kx32 SPB 3.3 3.5, 4.0 167, 138 3.3, 2.5 100TQFP (LF only from 2H`07) Mass Production 2E1D
K7B403625B 128Kx36 SB 3.3 6.5, 7.5 133, 118 3.3, 2.5 100TQFP (LF only from 2H`07) Mass Production
K7B401825B 256Kx18 SB 3.3 6.5, 7.5 133, 118 3.3, 2.5 100TQFP (LF only from 2H`07) Mass Production
NOTES: 2E1D = 2-cycle Enable and 1-cycle Disable 2E2D = 2-cycle Enable and 2-cycle Disable
NOTES: 250MHz could cover 200MHz speed option / 167MHz could cover 133MHz speed option
A
Section MEMORY AND ST ORA GE
18a
Synchronous SRAM
SAMSUNG SEMICONDUCTOR, INC. SEPTEMBER 2006BR-06-ALL-001
NtRAM (18Mbit) SRAM
Part Operating Access Time Speed I/O Production
Number Organization Mode Vdd (V) tCD(ns)
t
CYC (MHz) Voltage (V) Package Status
K7N161831B 1Mx18 SPB 3.3, 2.5 2.6, 3.5 250, 167 3.3, 2.5 100TQFP(LF only from 2H`07), Mass Production
165FBGA
K7N163631B 512Kx36 SPB 3.3, 2.5 2.6, 3.5 250, 167 3.3,2.5 100TQFP(LF only from 2H`07), Mass Production
165FBGA
K7M161835B 1Mx18 FT(SB) 3.3 6.5 133 3.3, 2.5 100TQFP (LF only from 2H`07) Mass Production
K7M163635B 512Kx36 FT(SB) 3.3 6.5 133 3.3, 2.5 100TQFP (LF only from 2H`07) Mass Production
NOTES: 250MHz could cover 200MHz speed option / 167MHz could cover 133MHz speed option / 6.5ns could cover 7.5ns speed option
NtRAM (36Mbit) SRAM
Part Operating Access Time Speed I/O Production
Number Organization Mode Vdd (V) tCD(ns)
t
CYC (MHz) Voltage (V) Package Status
K7N323645M 1Mx36 SPB 2.5 2.6, 3.2,3.5,4.2 250, 200,167, 133 2.5 100TQFP, 165FBGA EOL in Q1`07
K7N321845M 2Mx18 SPB 2.5 2.6, 3.2,3.5,4.2 250, 200,167, 133 2.5 100TQFP, 165FBGA EOL in Q1`07
K7N323601M 1Mx36 SPB 3.3 2.6, 3.2,3.5,4.2 250, 200,167, 133 3.3, 2.5 100TQFP, 165FBGA EOL in Q1`07
K7N321801M 2Mx18 SPB 3.3 2.6, 3.2,3.5,4.2 250, 200,167, 133 3.3, 2.5 100TQFP, 165FBGA EOL in Q1`07
K7M323625M 1Mx36 FT 3.3 7.5 118 3.3, 2.5 100TQFP EOL in Q1`07
K7M321825M 2Mx18 FT 3.3 7.5 118 3.3, 2.5 100TQFP EOL in Q1`07
K7N32363SC 1Mx36 SPB 3.3, 2.5 2.6, 3.5 250, 167 3.3, 2.5 100TQFP(LF only), 165FBGA Q3`06 (E/S)
K7N32183SC 2Mx18 SPB 3.3, 2.5 2.6, 3.5 250, 167 3.3, 2.5 100TQFP(LF only), 165FBGA Q3`06 (E/S)
K7M323635C 1Mx36 FT 3.3, 2.5 7.5 118 3.3, 2.5 100TQFP (LF only) Q3`06 (E/S)
K7M321835C 2Mx18 FT 3.3, 2.5 7.5 118 3.3, 2.5 100TQFP (LF only) Q3`06 (E/S)
NOTES: Recommended speed options for SPB are 250MHz and 167MHz Recommended access speed option for SB is 7.5ns
NOTES: 250MHz could cover 200MHz speed option / 167MHz could cover 133MHz speed option
NtRAM (72Mbit) SRAM
Part Operating Access Time Speed I/O Production
Number Organization Mode Vdd (V) tCD(ns)
t
CYC (MHz) Voltage (V) Package Status
K7N643645M 2Mx36 SPB 2.5 2.6, 3.5 250, 167 2.5 100TQFP(LF Only), 165FBGA Mass Production
K7N641845M 4Mx18 SPB 2.5 2.6, 3.5 250, 167 2.5 100TQFP(LF Only), 165FBGA Mass Production
NOTES: 250MHz could cover 200MHz speed option / 167MHz could cover 133MHz speed option
SPB & FT (2Mbit) SRAM
Part Operating Access Time Speed I/O Production
Number Organization Mode Vdd (V) tCD(ns)
t
CYC (MHz) Voltage (V) Package Status Comments
K7A203600B 64Kx36 SPB 3.3 4 138 2.5, 3.3 100 TQFP Will be EOL'd in Q1`07 2E1D
K7A203200B 64Kx32 SPB 3.3 4 138 2.5, 3.3 100 TQFP Will be EOL'd in Q1`07 2E1D
NOTES: 2E1D = 2-cycle Enable and 1-cycle Disable 2E2D = 2-cycle Enable and 2-cycle Disable
A
Section
MEMORY AND ST ORA GE
19a
Synchronous SRAM
SAMSUNG SEMICONDUCTOR, INC.
SEPTEMBER 2006 BR-06-ALL-001
NtRAM (8Mbit) SRAM
Part Operating Access Time Speed I/O Production
Number Organization Mode Vdd (V) tCD(ns)
t
CYC (MHz) Voltage (V) Package Status
K7N803601B 256Kx36 SPB 3.3 3.5, 4.2 167,133 3.3,2.5 100TQFP (LF only from 2H`07) Mass Production
K7N801801B 512Kx18 SPB 3.3 3.5, 4.2 167,133 3.3,2.5 100TQFP (LF only from 2H`07) Mass Production
K7N803609B 256Kx36 SPB 3.3 2.6 250 3.3,2.5 100TQFP (LF only from 2H`07) Mass Production
K7N801809B 512Kx18 SPB 3.3 2.6 250 3.3,2.5 100TQFP (LF only from 2H`07) Mass Production
K7N803645B 256Kx36 SPB 2.5 3.5, 4.2 167,133 2.5 100TQFP (LF only from 2H`07) Mass Production
K7N801845B 512Kx18 SPB 2.5 3.5, 4.2 167,133 2.5 100TQFP (LF only from 2H`07) Mass Production
K7N803649B 256Kx36 SPB 2.5 2.6 250 2.5 100TQFP (LF only from 2H`07) Mass Production
K7N801849B 512Kx18 SPB 2.5 2.6 250 2.5 100TQFP (LF only from 2H`07) Mass Production
K7M801825B 512Kx18 FT 3.3 6.5,7.5 133,117 3.3, 2.5 100TQFP (LF only from 2H`07) Mass Production
K7M803625B 256Kx36 FT 3.3 6.5,7.5 133,117 3.3, 2.5 100TQFP (LF only from 2H`07) Mass Production
NtRAM (4Mbit) SRAM
Part Operating Access Time Speed I/O Production
Number Organization Mode Vdd (V) tCD(ns)
t
CYC (MHz) Voltage (V) Package Status
K7N403601B 128Kx36 SPB 3.3 3.5, 4.2 167,133 3.3,2.5 100TQFP (LF only from 2H`07) Mass Production
K7N401801B 256Kx18 SPB 3.3 3.5, 4.2 167,133 3.3,2.5 100TQFP (LF only from 2H`07) Mass Production
K7N403609B 128Kx36 SPB 3.3 2.6, 3.0 250,200 3.3,2.5 100TQFP (LF only from 2H`07) Mass Production
K7N401809B 256Kx18 SPB 3.3 2.6, 3.0 250,200 3.3,2.5 100TQFP (LF only from 2H`07) Mass Production
LATE-WRITE R-R (16Mbit) SRAM
Part Operating Access Time Speed I/O Production
Number Organization Mode Vdd (V) tCD(ns)
t
CYC (MHz) Voltage (V) Package Status
K7P161866A 1Mx18 SP 2.5 2 250 1.5 (Max 1.9) 119BGA Mass Production
K7P163666A 512Kx36 SP 2.5 1.6 300,250 1.5 (Max.1.9) 119BGA Mass Production
LATE-WRITE R-R (32Mbit) SRAM
Part Operating Access Time Speed I/O Production
Number Organization Mode Vdd (V) tCD(ns)
t
CYC (MHz) Voltage (V) Package Status
K7P321888M 2Mx18 SP 1.8 1.7, 2.0 300,250 1.5 (Max 1.8) 119BGA EOL in Q2`07
K7P323688M 1Mx36 SP 1.8 1.7, 2.0 300,250 1.5 (Max 1.8) 119BGA EOL in Q2`07
K7P321866M 2Mx18 SP 2.5 1.6, 2.0 300,250 1.5 (Max 1.8) 119BGA EOL in Q2`07
K7P323666M 1Mx36 SP 2.5 1.6, 2.0 300,250 1.5 (Max 1.8) 119BGA EOL in Q2`07
K7P321874C 2Mx18 SP 1.8 / 2.5V 1.6,2.0 300,250 1.5 (Max 1.8) 119BGA Q3`06 (C/S)
K7P323674C 1Mx36 SP 1.8 / 2.5V 1.6,2.0 300,250 1.5 (Max 1.8) 119BGA Q3`06 (C/S)
A
Section MEMORY AND ST ORA GE
20a
Synchronous SRAM
SAMSUNG SEMICONDUCTOR, INC. SEPTEMBER 2006BR-06-ALL-001
DDR (16Mbit) SRAM
P art Access Time Cycle Time I/O Production
Number Organization Vdd (V) tCD (ns) (MHz) Voltage (V) Package Status
K7D161874B 1Mx18 1.8~2.5 2.3 330,300 1.5~1.9 153BGA Mass Production
K7D163674B 512Kx36 1.8~2.5 2.3 330, 300 1.5~1.9 153BGA Mass Production
LATE-WRITE R-R & R-L (4Mbit) SRAM
Part Operating Access Time Speed I/O Production
Number Organization Mode Vdd (V) tCD(ns)
t
CYC (MHz) Voltage (V) Package Status
K7P401822B 256Kx18 SP 3.3 2.5,2.7,3.0 250,200,167 2.5/3.3 119BGA Mass Production
K7P401823B 256Kx18 SP 3.3 6.5 167 2.5/3.3 119BGA Mass Production
K7P403622B 128Kx36 SP 3.3 2.5,2.7,3.0 250,200,167 2.5/3.3 119BGA Mass Production
DDR (8Mbit) SRAM
P art Access Time Cycle Time I/O Production
Number Organization Vdd (V) tCD (ns) (MHz) Voltage (V) Package Status
K7D803671B 256Kx36 2.5 1.7/1.9/2.1 333, 330, 250 1.5(Max 2.0) 153BGA Mass Production
K7D801871B 512Kx18 2.5 1.7/1.9/2.1 333, 330, 250 1.5(Max 2.0) 153BGA Mass Production
LATE-WRITE R-R (8Mbit) SRAM
Part Operating Access Time Speed I/O Production
Number Organization Mode Vdd (V) tCD(ns)
t
CYC (MHz) Voltage (V) Package Status
K7P801811B 512Kx18 SP 3.3 1.5,1.6,2.0 333,300,250 1.5 (Max.2.0) 119BGA Mass Production
K7P803611B 256Kx36 SP 3.3 1.5,1.6,2.0 333,300,250 1.5 (Max.2.0) 119BGA Mass Production
K7P801866B 512Kx18 SP 2.5 1.5,1.6,2.0 333,300.25 1.5 (Max.2.0) 119BGA Mass Production
K7P803666B 256Kx36 SP 2.5 1.5, 1.6, 2.0 333, 300,250 1.5 (Max 2.0) 119BGA Mass Production
K7P801822B 512Kx18 SP 3.3 1.5, 1.6, 2.0 333, 300,250 2.5/3.3 119BGA Mass Production
K7P803622B 256Kx36 SP 3.3 3.3,2.5,2.0 250,200,166 2.5/3.3 119BGA Mass Production
A
Section
MEMORY AND ST ORA GE
21a
SAMSUNG SEMICONDUCTOR, INC.
SEPTEMBER 2006 BR-06-ALL-001
DDR II CIO/SIO (18Mbit) SRAM
P art Access Time Cycle Time I/O Production
Number Organization Vdd (V) tCD (ns) (MHz) Voltage (V) Package Status Comments
K7I161882B 1Mx18 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 165FBGA Mass Production CIO-2B
K7I161884B 1Mx18 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 165FBGA Mass Production CIO-4B
K7J161882B 1Mx18 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 165FBGA Mass Production SIO-2B
K7J163682B 512Kx36 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 165FBGA Mass Production SIO-2B
K7I163682B 512Kx36 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 165FBGA Mass Production CIO-2B
K7I163684B 512Kx36 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 165FBGA Mass Production CIO-4B
NOTES: 2B = Burst of 2 4B = Burst of 4 SIO = Separate I/O CIO = Common I/O
DDR II CIO/SIO (36Mbit) SRAM
P art Access Time Cycle Time I/O Production
Number Organization Vdd (V) tCD (ns) (MHz) Voltage (V) Package Status Comments
K7I321882M 2Mx18 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 165FBGA EOL in Q4`06 CIO-2B
K7I321884M 2Mx18 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 165FBGA EOL in Q4`06 CIO-4B
K7J321882M 2Mx18 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 165FBGA EOL in Q4`06 SIO-2B
K7I323682M 1Mx36 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 165FBGA EOL in Q4`06 CIO-2B
K7I323684M 1Mx36 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 165FBGA EOL in Q4`06 CIO-4B
K7J323682M 1Mx36 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 165FBGA EOL in Q4`06 SIO-2B
K7I321882C 2Mx18 1.8 0.45 330,300,250 1.5,1.8 165FBGA Q3`06 (C/S) CIO-2B
K7I321884C 2Mx18 1.8 0.45 330,300,250 1.5,1.8 165FBGA Q3`06 (C/S) CIO-4B
K7J321882C 2Mx18 1.8 0.45 330,300,250 1.5,1.8 165FBGA Q3`06 (C/S) SIO-2B
K7I323682C 1Mx36 1.8 0.45 330,300,250 1.5,1.8 165FBGA Q3`06 (C/S) CIO-2B
K7I323684C 1Mx36 1.8 0.45 330,300,250 1.5,1.8 165FBGA Q3`06 (C/S) CIO-4B
K7J323682C 1Mx36 1.8 0.45 330,300,250 1.5,1.8 165FBGA Q3`06 (C/S) SIO-2B
NOTES: 2B = Burst of 2 4B = Burst of 4 SIO = Separate I/O CIO = Common I/O
C-die will support high-speed bins only 330, 300, 250MHz, which can cover slow-speed bins (200MHz, 167MHz) using stable DLL circuit .
Synchronous SRAM
DDR (32Mbit) SRAM
P art Access Time Cycle Time I/O Production
Number Organization Vdd (V) tCD (ns) (MHz) Voltage (V) Package Status
K7D321874A 2Mx18 1.8~2.5 2.0 400,375, 333 1.5~1.8 153BGA EOL in Q4`06
K7D323674A 1Mx36 1.8~2.5 2.0 400,375, 333 1.5~1.8 153BGA EOL in Q4`06
K7D321874C 2Mx18 1.8~2.5 2.0 400, 375, 333 1.5~1.8 153BGA Q3`06 (C/S)
K7D323674C 1Mx36 1.8~2.5 2.0 400, 375, 333 1.5~1.8 153BGA Q3`06 (C/S)
A
Section MEMORY AND ST ORA GE
22a SAMSUNG SEMICONDUCTOR, INC.
Synchronous SRAM
SEPTEMBER 2006BR-06-ALL-001
QDR I,II (18Mbit) SRAM
P art Access Time Cycle Time I/O Production
Number Organization Vdd (V) tCD (ns) (MHz) Voltage (V) Package Status Comments
K7R160982B 2Mx9 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 165FBGA Mass Production QDR II - 2B
K7R161882B 1Mx18 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 165FBGA Mass Production QDR II - 2B
K7R161884B 1Mx18 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 165FBGA Mass Production QDR II - 4B
K7Q161862B 1Mx18 1.8v / 2.5v 2.5 167 1.5,1.8 165FBGA Mass Production QDR I - 2B
K7Q161864B 1Mx18 1.8v / 2.5v 2.5 167 1.5,1.8 165FBGA Mass Production QDR I - 4B
K7R163682B 512Kx36 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 165FBGA Mass Production QDR II - 2B
K7R163684B 512Kx36 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 165FBGA Mass Production QDR II - 4B
K7Q163662B 512Kx36 1.8v / 2.5v 2.5 167 1.5,1.8 165FBGA Mass Production QDR I - 2B
K7Q163664B 512Kx36 1.8v / 2.5v 2.5 167 1.5,1.8 165FBGA Mass Production QDR I - 4B
NOTES: 2B = Burst of 2 4B = Burst of 4
DDR II+ CIO/SIO (18Mbit) SRAM
P art Access Time Cycle Time I/O Production
Number Organization Vdd (V) tCD (ns) (MHz) Voltage (V) Package Status Comments
K7K1618T2C 1Mx18 1.8 0.45 400, 333 1.5 165FBGA Q3`06 (E/S) D DRII + C IO -2B
K7K1636T2C 512Kx36 1.8 0.45 400, 333 1.5 165FBGA Q3`06 (E/S) D DRII + C IO -2B
NOTES:Offer 2-clock latency now; we can also support 2.5-clock latency with 500MHz speed based on demand.
DDR II+ CIO/SIO (36Mbit) SRAM
P art Access Time Cycle Time I/O Production
Number Organization Vdd (V) tCD (ns) (MHz) Voltage (V) Package Status Comments
K7K3218T2C 2Mx18 1.8 0.45 400, 333 1.5 165FBGA Q3`06 (E/S) DDRII + CIO-2B
K7K3236T2C 1Mx36 1.8 0.45 400, 333 1.5 165FBGA Q3`06 (E/S) DDRII + CIO-2B
NOTES:Offer 2-clock latency now; we can also support 2.5-clock latency with 500MHz speed based on demand.
DDR II CIO/SIO (72Mbit) SRAM
P art Access Time Cycle Time I/O Production
Number Organization Vdd (V) tCD (ns) (MHz) Voltage (V) Package Status Comments
K7I641882M 4Mx18 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 165FBGA Mass Production CIO-2B
K7I641884M 4Mx18 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 165FBGA Mass Production CIO-4B
K7J641882M 4Mx18 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 165FBGA Mass Production SIO-2B
K7I643682M 2Mx36 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 165FBGA Mass Production CIO-2B
K7I643684M 2Mx36 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 165FBGA Mass Production CIO-4B
K7J643682M 2Mx36 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 165FBGA Mass Production SIO-2B
NOTES: 2B = Burst of 2 4B = Burst of 4 SIO = Separate I/O CIO = Common I/O
23a
A
Section
MEMORY AND ST ORA GE
Synchronous SRAM
SAMSUNG SEMICONDUCTOR, INC.
SEPTEMBER 2006 BR-06-ALL-001
QDR II+ (18Mbit) SRAM
P art Access Time Cycle Time I/O Production
Number Organization Vdd (V) tCD (ns) (MHz) Voltage (V) Package Status Comments
K7S1618T4C 1Mx18 1.8 0.45 400, 333 1.5 165FBGA Q3`06 (E/S) QDR II + 4B
K7S1636T4C 512Kx36 1.8 0.45 400, 333 1.5 165FBGA Q3`06 (E/S) QDR II + 4B
NOTES: Offer 2-clock latency now; we can also support 2.5-clock latency with 500MHz speed based on demand.
QDR II+ (36Mbit) SRAM
P art Access Time Cycle Time I/O Production
Number Organization Vdd (V) tCD (ns) (MHz) Voltage (V) Package Status Comments
K7S3218T4C 1Mx36 1.8 0.45 400, 333 1.5 165FBGA Q3`06 (E/S) QDR II + 4B
K7S3236T4C 2Mx18 1.8 0.45 400, 333 1.5 165FBGA Q3`06 (E/S) QDR II + 4B
NOTES:Offer 2-clock latency now; we can also support 2.5-clock latency with 500MHz speed based on demand.
QDR II (72Mbit) SRAM
P art Access Time Cycle Time I/O Production
Number Organization Vdd (V) tCD (ns) (MHz) Voltage (V) Package Status Comments
K7R640982M 8Mx9 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 165FBGA Mass Production QDR II-2B
K7R641882M 4Mx18 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 165FBGA Mass Production QDR II-2B
K7R641884M 4Mx18 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 165FBGA Mass Production QDR II-4B
K7R643682M 2Mx36 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 165FBGA Mass Production QDR II-2B
K7R643684M 2Mx36 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 165FBGA Mass Production QDR II-4B
NOTES: 2B = Burst of 2 4B = Burst of 4
The recommended speed bins are 250MHz, 200MHz for 2B part, 300MHz, 250MHz for 4B part.
QDR II (36Mbit) SRAM
P art Access Time Cycle Time I/O Production
Number Organization Vdd (V) tCD (ns) (MHz) Voltage (V) Package Status Comments
K7R320982M 4Mx9 1.8 0.45,0.50 200,167 1.5,1.8 165FBGA EOL in Q4`06 QDR II-2B
K7R321882M 2Mx18 1.8 0.45,0.50 200,167 1.5,1.8 165FBGA EOL in Q4`06 QDR II-2B
K7R321884M 2Mx18 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 165FBGA EOL in Q4`06 QDR II-4B
K7R323682M 1Mx36 1.8 0.45,0.50 200,167 1.5,1.8 165FBGA EOL in Q4`06 QDR II-2B
K7R323684M 1Mx36 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 165FBGA EOL in Q4`06 QDR II-4B
K7R320982C 4Mx9 1.8 0.45 300, 250, 200 1.5,1.8 165FBGA Q3`06 (C/S) QDR II-2B
K7R321882C 2Mx18 1.8 0.45 300, 250, 200 1.5,1.8 165FBGA Q3`06 (C/S) QDR II-2B
K7R321884C 2Mx18 1.8 0.45 333, 300, 250 1.5,1.8 165FBGA Q3`06 (C/S) QDR II-4B
K7R323682C 1Mx36 1.8 0.45 300, 250, 200 1.5,1.8 165FBGA Q3`06 (C/S) QDR II-2B
K7R323684C 1Mx36 1.8 0.45 333, 300, 250 1.5,1.8 165FBGA Q3`06 (C/S) QDR II-4B
NOTES: 2B = Burst of 2 4B = Burst of 4
C-die will support high-speed bins only 300, 250, 200MHz, which can cover slow-speed bin (167MHz) using stable DLL circuit.
A
Section MEMORY AND ST ORA GE Synchronous SRAM Ordering Information
24a SAMSUNG SEMICONDUCTOR, INC. SEPTEMBER 2006BR-06-ALL-001
SYNCHRONOUS SRAM ORDERING INFORMATION
K 7 X X X X X X X X - X X X X X X X
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
1. Memory (K)
2. Sync SRAM: 7
3. Small Classification
A: Sync Pipelined Burst
B: Sync Burst
C: Custom Product
D: Double Data Rate
I: Double Data Rate II, Common I/O
J: Double Data Rate, Separate I/O
K: Double Data II+, Common I/O
L: Late Select
M: Sync Burst + NtRAM
N: Sync Pipelined Burst + NtRAM
P: Sync Pipe
Q: Quad Data Rate I
R: Quad Data Rate II
S: Quad Data Rate II+
4~5. Density
10: 1M 80: 8M
20: 2M 16: 18M
40: 4M 32: 36M
64: 72M 44: 144M
6~7. Organization
08: x8 09: x9
18: x18 32: x32
36: x36 44: x144
72: x72
8~9.Vcc, Interface, Mode
00: 3.3V,L VTTL,2E1D WIDE
01: 3.3V,L VTTL,2E2D WIDE
08: 3.3V,LVTTL,2E2D Hi SPEED
09: 3.3V,LVTTL,Hi SPEED
11: 3.3V,HSTL,R-R
12: 3.3V,HSTL,R-L
14: 3.3V,HSTL,R-R Fixed ZQ
22: 3.3V,LVTTL,R-R
23: 3.3V,LVTTL,R-L
25: 3.3V,L VTTL,SB-FT WIDE
30: 1.8/2.5/3.3V,LVTTL,2E1D
31: 1.8/2.5/3.3V,LVTTL,2E2D
35: 1.8/2.5/3.3V,LVTTL,SB-FT
44: 2.5V,LVTTL,2E1D
45: 2.5V,LVTTL,2E2D
49: 2.5V,LVTTL,Hi SPEED
52: 2.5V,1.5/1.8V,HSTL,Burst2
54: 2.5V,1.5/1.8V,HSTL,Burst4
62: 2.5V/1.8V,HSTL,Burst2
64: 2.5V/1.8V,HSTL,Burst4
66: 2.5V,HSTL,R-R
70: 2.5V,HSTL,4-1-1-1
71: 2.5V,HSTL,3-1-1-1
73: 1.5V,1.8V,HSTL,All
74: 1.8V,2.5V,HSTL,All
80: 1.8V,LVCMOS,2E1D
82: 1.8V,HSTL,Burst2
84: 1.8V,HSTL,Burst4
85: 1.8V,LVCMOS,2E2D,Hi SPEED
88: 1.8V,HSTL,R-R
91: 1.5V,HSTL,All
95: 1.0V,HSTL,All
T2: 1.8V,2Clock Latency,Burst2
T4: 1.8V,2Clock Latency,Burst4
U2: 1.8V,2.5Clock Latency,Burst2
U4: 1.8V,2.5Clock Latency,Burst4
10. Generation
M: 1st Generation
A: 2nd Generation
B: 3rd Generation
C: 4th Generation
D: 5th Generation
Z:TEMPORARY CODE
11.“--”
12. Package
H: BGA,FCBGA,PBGA
G: BGA, FCBGA, FBGA (LF)
F: FBGA
E: FBGA (LF)
Q: (L)QPF
P: (L)QFP(LF)
C: CHIP BIZ
W:WAFER
13.Temp, Power
- COMMON (Temp,Power)
0: NONE,NONE (Containing of Error handling code)
A:Automotive,Normal
B: Commercial,Low Low
C: Commercial,Normal
E: Extended,Normal
I: Industrial,Normal
- WAFER, CHIP BIZ Level Division
0: NONE,NONE
1: Hot DC sort
2: Hot DC, selected AC sort
14~15. Speed
- Sync Burst,Sync Burst + NtRAM
& < Mode is R-L >(Clock Accesss Time)
10: 10ns(Sync Burst, Sync Burst + NtRAM)
38: 3.8ns 43: 4.3ns
48: 4.8ns
50: 5ns(Only Sync Pipe)
55: 5.5ns 60: 6ns
65: 6.5ns 67: 6.7ns
70: 7ns 75: 7.5ns
80: 8ns 85: 8.5ns
90: 9ns
- Other Small Classification (Clock Cycle Time)
10: 100MHz 11: 117MHz
13: 133MHz 14: 138MHz
15: 150MHz 16: 166MHz
17: 175MHz 18: 183MHz
19: 143MHz 20: 200MHz
21: 200MHz(2.0ns) 22: 225MHz
25: 250MHz
26: 250MHz(1.75ns) 27: 275MHz
30: 300MHz 33: 333MHz
35: 350MHz
36: 366MHz(t-CYCLE) 37: 375MHz
40: 400MHz(t-CYCLE) 42: 425MHz
45: 450MHz
50: 500MHz(except Sync Pipe)
6A: 600MHz 6F: 650Mhz(Only CSRAM)
7F: 750MHz
16. Packing Type (16 digit)
- Common to all products, except of Mask ROM
- Divided into TAPE & REEL(In Mask ROM,divided into
TRAY,AMMO Packing Separately)
Type Packing Type New Marking
Component TAPE & REEL T
Other (Tray,Tube,Jar) 0 (Number)
Stack S
Component TRAY Y
(Mask ROM) AMMO PACKING A
Module MODULE TAPE & REEL P
MODULE Other Packing M
A
Section
MEMORY AND ST ORA GE
MCPs
25a
SAMSUNG SEMICONDUCTOR, INC.
BR-06-ALL-001
SEPTEMBER 2006
MCP: NAND/DRAM
DENSITY VCC (V) ORGANIZATION PACKAGE INFORMATION
FLASH DRAM Memory Combination FLASH DRAM FLASH DRAM Part No. Size Type
256Mb 128Mb ND256128 1.8V 1.8V x8 x16 K5D5629ACC-D0900000 10.5x13x1.4 107FBGA
256Mb 256Mb ND256256 1.8V 1.8V x8 x16 K5D5657ACB-D0900000 10.5x13x1.4 107FBGA
2.65V 1.8V x8 x16 K5D5657DCB-D090000 10.5x13x1.4 107FBGA
256Mb 512Mb ND256512 3.0V 2.5V x8 x32 K5D5613HCA-D090000 10.5x13x1.2 137FBGA
3.3V 3.3V x8 x32 K5D5613VCM-D090000 10.5x13x1.2 137FBGA
256Mb 1Gb NDD256512512 3.0V 2.5V x8 x16 KAL005005M-DGYY000 10.5X13X1.4 137FBGA
128Mb ND256128 1.8V 1.8V x8 x16 K5D5629ACC-D090000 10.5x13x1.2 107FBGA
256Mb ND256256 1.8V 1.8V x8 x16 K5D5657ACB-D090000 10.5x13x1.2 107FBGA
2.65V 1.8V x8 x16 K5D5657DCB-D090000 10.5x13x1.2 107FBGA
512Mb 256Mb ND512256 1.8V 1.8V x8 x16 K5D1257ACB-D090000 10.5x13x1.2 107FBGA
2.65V 1.8V x8 x16 K5D1257DCA-D090000 10.5x13x1.4 107FBGA
1.8V 1.8V x8 x32 K5D1258ACM-D090000 11.5x13x1.2 137FBGA
2.65V 1.8V x8 x32 K5D1258DCM-D090000 10.5x13x1.4 137FBGA
512Mb 512Mb NDD512256256 2.65V 1.8V x8 x32 KAL003004M-DG55000 10.5x13x1.4 137FBGA
ND512512 2.65V 1.8V x8 x16 K5D1212DCA-D090000 10.5x13x1.2 107FBGA
1.8V 1.8V x8 x32 K5D1213ACM-D090000 10.5x13x1.2 137FBGA
1.8V 1.8V x8 x16(D) K5E1212ACB-D075000 11.5x13x1.4 202FBGA
1Gb 256Mb NND512512256 2.65V 1.8V x8 x16 KAG00K007A-DGG5000 10.5x13x1.4 107FBGA
1Gb 512Mb NNDD512512256256 2.65V 1.8V x8 x16 KBE00F003A-D411000 10.5x13x1.4 107FBGA
1.8V 1.8V x8 x16 KBE00G003M-D429000 10.5x13x1.4 107FBGA
3.0V 3.0V x8 x16 KBE00J006A-D411000 10.5x13x1.4 107FBGA
2.65V 1.8V x8 x32 KBE00F005A-D411000 10.5x13x1.4 137FBGA
1.8V 1.8V x8 x32 KBE00G005A-D411000 10.5x13x1.4 137FBGA
NND512512512 1.8V 1.8V x8 x16 KAG004003M-DDD5000 10.5x13x1.4 107FBGA
2.65V 1.8V x8 x16 KAG00K003M-DGG5000 10.5x13x1.4 107FBGA
1.8V 1.8V x8 x32 KAG00400SM-DDDY000 10.5x13x1.4 137FBGA
NDD1G256256 1.8V(L) 1.8V x8 x32 KAL00T00KM-DG55000 11.5x13x1.2 137FBGA
3.0V 2.65V x8 x32 KAL00Z00LM-DA55000 11.5x13x1.4 137FBGA
ND1G512 2.65V 1.8V x8 x16 K5D1G12DCM-D090000 10.5x13x1.4 107FBGA
2.65V 1.8V x8 x32 K5D1G13DCM-D090000 10.5x13x1.4 137FBGA
1.8V 1.8V x8 x32 K5D1G13ACD-D075000 10.5x13x1.2 137FBGA
1.8V(L) 1.8V x8 x16 K5D1G12ACM-D090000 12.0x14x1.4 107FBGA
1.8V(L) 1.8V x8 x32 K5E1G13ACM-D075000 11.5x13x1.2 137FBGA
1Gb 1Gb ND1G512512 1.8V(L) 1.8V x8 x16 KAL00X00VM-D1YY000 10.5x13x1.4 137FBGA
2Gb 512Mb NNDD1G1G256256 2.65V(L) 1.8V x8 x32 KBE00S005M-D411000 12x14x1.4 137FBGA
3.3V(L) 3.0V x8 x16 KBE00U006M-D411000 12x14x1.4 107FBGA
1.8V(L) 1.8V x8 x32 KBE00H005M-D411000 11.5x13x1.4 137FBGA
1.8V(L) 2.8V x8 x32 KBE00H00BM-D413000 11.5x13x1.4 137FBGA
NND1G1G512 2.65V 1.8V x8 x16 KAG006003M-DGG5000 12.0x14x1.4 107FBGA
2.65V 1.8V x8 x32 KAG006003M-DGG5000 12.0x14x1.4 137FBGA
1.8V(L) 1.8V x8 x32(D) KAG001002M-DGGY000 11.5x13x1.4 137FBGA
2.65V 1.8V x8 x16 KAG006003A-D115000 10.5x13x1.4 107FBGA
2.65V 1.8V x8 x32 KAG00600SA-D115000 10.5x13x1.4 137FBGA
2Gb 1Gb NNDD1G1G512512 1.8V 1.8V x8 x32 KBE00500AM-D437000 10.5x13x1.4 137FBGA
2.65V 1.8V x8 x32 KBE00S00AA-D435000 10.5x13x1.4 137FBGA
2.65V(L) 3.0V x8 x32 KBE00100GM-431000 11.5x13x1.4 137FBGA
NOTES:
1. N = NAND,D= DRAM memory combination indicates the type, density, and number of die stacks in the MCP. (Ex. NDD256256256 = 256Mb NAND + 256Mb DRAM + 256Mb DRAM).
2.When ordering Tape and Reel, please indicate by the letter "T" on the 3rd to last field in the part number. (Ex. K5D5629ACC-D090T00)
3. (D) Denotes DDR SDRAM packaged in MCP
4. (L) Denotes Large Block NAND packaged in MCP
A
Section MEMORY AND ST ORA GE
26a
MCPs
SAMSUNG SEMICONDUCTOR, INC. SEPTEMBER 2006BR-06-ALL-001
MCP: OneNAND™/DRAM
DENSITY VCC (V) ORGANIZATION PACKAGE INFORMATION
FLASH DRAM Memory Combination FLASH DRAM FLASH DRAM Part No. Size Type
256Mb 256Mb OD1256256 3.3V 3.3V x16 x32 K5R5658VCM-DR75000 8x13x1.4 188FBGA
3.3V 1.8V x16 x32 K5R5658LCM-DR75000 8x13x1.4 188FBGA
512Mb 512Mb OD512512 1.8V 1.8V x16 x16(D) K5W1212ACM-DK75000 11.5x13x1.4 167FBGA
1.8V 1.8V x16 x32 K5R1213ACA-DK75000 11.5x13x1.0 202FBGA
1Gb 512Mb OD1G512 1.8V 1.8V x16 x16 K5R1G12ACM-DK90000 11.5x13x1.4 167FBGA
1.8V 1.8V x16 x32 K5R1G13ACA-DK75000 11.5x13x1.0 202FBGA
3Gb 512Mb OOOD1G1G1G512 1.8V 1.8V x16 x32 KBR00Y00EA-D434000 11.5x13x1.4 167FBGA
NOTES:
1. O= OneNAND,D= DRAM Memory combination indicates the type, density, and number of die stacks in the MCP. (Ex. OD1G512 = 1Gb OneNAND + 512Mb SDRAM).
2.When ordering Tape and Reel, please indicate by the letter "T" on the 3rd to last field in the part number. (Ex. K5R5658VCM-DR75T00)
3. (D) Denotes DDR SDRAM packaged in MCP.
4.All OneNAND Flash have demuxed Add/Data lines.
MCP: NOR/SRAM AND NOR/UtRAM
DENSITY Memory VCC (V) ORGANIZATION PACKAGE INFORMATION
FLASH SRAM Combination FLASH SRAM FLASH SRAM BOOT NOR OPR. Part No. Size Type
32Mb 4Mb RS3204 3.0V 3.0V x8/x16 x8/x16 BOTTOM Async.No Page K5A3240CBM-F755000 8x11x1.2 69FBGA
8Mb RS3208 3.0V 3.0V x8/x16 x8/x16 TOP Async. No Page K5A3281CTM-D755000 8x11x1.2 69FBGA
3.0V 3.0V x8/x16 x8/x16 BOTTOM Async. No Page K5A3281CBM-D755000 8x11x1.2 69FBGA
32Mb 8Mb RS3208 3.0V 3.0V x8/x16 x8/x16 TOP Async. No Page K5A3281CTM-D755000 8x11x1.2 69FBGA
3.0V 3.0V x8/x16 x8/x16 BOTTOM Async. No Page K5A3281CBM-D755000 8x11x1.2 69FBGA
64Mb 32Mb RU6432 3.0V 3.0V x16 x16 TOP Async. No Page K5J6332CTM-D770000 8x11.6x1.4 69FBGA
3.0V 3.0V x16 x16 BOTTOM Async. No Page K5J6332CBM-D770000 8x11.6x1.4 69FBGA
128Mb 32Mb RU12832 3.0V 3.0V x16 x16 TOP/BOT Async. Page Mode K5L2931CAM-D770000 8x11.6x1.2 64FBGA
1.8V 1.8V x16 x16 TOP Sync Mux K5N2828ATM-SS66000 8.0x9.2x1.2 56FBGA
128Mb 64Mb RU12864 3.0V 3.0V x16 x16 TOP/BOT Async Page Mode K5L2963CAM-D770000 8x11.6x1.2 64FBGA
1.8V 1.8V x16 x16 TOP Sync K5L2864ATM-DF66000 8x12x1.4 115FBGA
256Mb 64Mb RU25664 3.0V 3.0V x16 x16 TOP/BOT Async Page Mode K5L5563CAM-D770000 8x11.6x1.2 84FBGA
256Mb 128Mb RU256128 1.8V 2.6/1.8V x16 x16 TOP/BOT Async Page Mode K5L5527CAM-D770000 8x11.6x1.2 84FBGA
NOTES:
1. R= NOR, S= SRAM, U= UtRAM Memory combination indicates the type,density, and number of die stacks in the MCP. (Ex. RRU646432 = 64Mb NOR + 64Mb NOR + 32Mb UtRAM).
2.When ordering Tape and Reel, please indicate by the letter "T" on the 3rd to last field in the part number. (Ex. K5D5629ACC-D090T00)
3.All NOR Flash have demuxed Add/Data lines unless otherwise indicated in NOR OPR column.
4.All packages are pin compatible to Spansion's MCP pin out.
MCP: NOR/DRAM
DENSITY Memory VCC (V) ORGANIZATION PACKAGE INFORMATION
FLASH SRAM Combination FLASH SRAM FLASH SRAM BOOT NOR OPR. Part No. Size Type
64Mb 256Mb RD64256 3.0V 2.6V x16 x32 TOP Async.No Page K5H6358ETA-D775000 10x11x0.8 145FBGA
64Mb 512Mb RD64512 3.0V 1.8V x16 x32(D) TOP Async. No Page K5Y6313LTM-D790000 10.5x12x1.4 151FBGA
512Mb 256Mb RRD512256 1.8V 1.8V x16 x16(D) TOP Sync MLC KAS35000AM-S44Y000 11x10x1.3 133FBGA
512Mb 512Mb RRD256256512 1.8V 1.8V x16 x16 T+B Sync KAS280003M-DUU5000 11.5x13x1.4 167FBGA
NOTES:
1. R= NOR, D= DRAM Memory combination indicates the type, density, and number of die stacks in the MCP. (Ex. RDD32128128 = 32Mb NOR + 128Mb DRAM + 128Mb DRAM).
2.When ordering Tape and Reel, please indicate by the letter "T" on the 3rd to last field in the part number. (Ex. K5H6358ETA-D775T00)
3.All NOR Flash have demuxed Add/Data lines.
27a
A
Section
MEMORY AND ST ORA GE
Hard Disk Drives
SAMSUNG SEMICONDUCTOR, INC.
BR-06-ALL-001
SEPTEMBER 2006
3.5” HARD DISK DRIVES (HDD)
Capacity RPMs Model # of Heads # of Disks Interface Buffer Size Seek Time MTBF
SpinP oint V Series V80 Series PATA/2MB 120GB 5400 rpm SV1203N 3 2 ATA-133 2MB 8.9ms 500K hrs
160GB 5400 rpm SV1604N 4 2 ATA-133 2MB 8.9ms 500K hrs
V120 CE Series 250GB 5400 rpm HA250JC 4 2 ATA-133 2MB 8.9ms 500K hrs
SpinPoint P Series P40 Series PATA/2MB 40GB 7200 rpm SP0411N 1 1 ATA-133 2MB 10ms 500K hrs
40GB 7200 rpm SP0401N 1 1 ATA-133 2MB 10ms 500K hrs
SATA 1.5Gb/s 40GB 7200 rpm SP0411C 1 1 S-ATA 1.5G 2MB 10ms 500K hrs
P80 Series PATA/2MB 80GB 7200 rpm SP0802N 2 1 ATA-133 2MB 8.9ms 500K hrs
80GB 7200 rpm SP0822N 2 1 ATA-133 2MB 8.9ms 500K hrs
120GB 7200 rpm SP1203N 3 2 ATA-133 2MB 8.9ms 500K hrs
160GB 7200 rpm SP1604N 4 2 ATA-133 2MB 8.9ms 500K hrs
160GB 7200 rpm SP1624N 4 2 ATA-133 2MB 8.9ms 500K hrs
PATA/8MB 80GB 7200 rpm SP0812N 2 1 ATA-133 8MB 8.9ms 500K hrs
80GB 7200 rpm SP0842N 2 1 ATA-133 8MB 8.9ms 500K hrs
120GB 7200 rpm SP1213N 3 2 ATA-133 8MB 8.9ms 500K hrs
160GB 7200 rpm SP1614N 4 2 ATA-133 8MB 8.9ms 500K hrs
160GB 7200 rpm SP1644N 4 2 ATA-133 8MB 8.9ms 500K hrs
SATA 1.5Gb/s 80GB 7200 rpm SP0812C 2 1 S-ATA 1.5G 8MB 8.9ms 500K hrs
120GB 7200 rpm SP1213C 3 2 S-ATA 1.5G 8MB 8.9ms 500K hrs
160GB 7200 rpm SP1614C 4 2 S-ATA 1.5G 8MB 8.9ms 500K hrs
P80 SD Series SA TA 3.0Gb/s 40GB 7200 rpm HD040GJ 1 1 S-ATA 3G 8MB 8.9ms 500K hrs
80GB 7200 rpm HD080HJ 2 1 S-ATA 3G 8MB 8.9ms 500K hrs
120GB 7200 rpm HD120IJ 3 2 S-ATA 3G 8MB 8.9ms 500K hrs
160GB 7200 rpm HD160JJ 4 2 S-ATA 3G 8MB 8.9ms 500K hrs
P120 Series PATA/8MB 200GB 7200 rpm SP2014N 4 2 ATA-133 8MB 8.9ms 500K hrs
250GB 7200 rpm SP2514N 4 2 ATA-133 8MB 8.9ms 500K hrs
SATA 3.0Gb/s 200GB 7200 rpm SP2004C 4 2 S-ATA 3G 8MB 8.9ms 600K hrs
250GB 7200 rpm SP2504C 4 2 S-ATA 3G 8MB 8.9ms 600K hrs
SpinP oint T Series T133 Series PATA/8MB 300GB 7200 rpm HD300LD 6 3 ATA-133 8MB 8.9ms 600K hrs
400GB 7200 rpm HD400LD 6 3 ATA-133 8MB 8.9ms 600K hrs
SATA 3.0Gb/s 300GB 7200 rpm HD300LJ 6 3 S-ATA 3G 8MB 8.9ms 600K hrs
400GB 7200 rpm HD400LJ 6 3 S-ATA 3G 8MB 8.9ms 600K hrs
2.5“ HARD DISK DRIVES (HDD)
Capacity RPMs Model # of Heads # of Disks Interface Buffer Size Seek Time MTBF
SpinPoint M Series M40 Series 40GB 5400 rpm MP0402H 2 1 ATA-6 8MB 12ms 330K hrs
60GB 5400 rpm MP0603H 3 2 ATA-6 8MB 12ms 330K hrs
80GB 5400 rpm MP0804H 4 2 ATA-6 8MB 12ms 330K hrs
M40S Series SATA 1.5Gb/s 40GB 5400 rpm HM040HI 2 1 S-ATA 8MB 12ms 330K hrs
60GB 5400 rpm HM060II 3 2 S-ATA 8MB 12ms 330K hrs
80GB 5400 rpm HM080JI 4 2 S-ATA 8MB 12ms 330K hrs
M60 Series 40GB 5400 rpm HM040HC 2 1 ATA-6 8MB 12ms 330K hrs
60GB 5400 rpm HM060HC 2 1 ATA-6 8MB 12ms 330K hrs
80GB 5400 rpm HM080IC 3 2 ATA-6 8MB 12ms 330K hrs
100GB 5400 rpm HM100JC 4 2 ATA-6 8MB 12ms 330K hrs
120GB 5400 rpm HM120JC 4 2 ATA-6 8MB 12ms 330K hrs
SATA 1.5Gb/s (3.0Gb/s) 40GB 5400 rpm HM041HI 2 1 S-ATA 8MB 12ms 330K hrs
60GB 5400 rpm HM060HI 2 1 S-ATA 8MB 12ms 330K hrs
80GB 5400 rpm HM080II 3 2 S-ATA 8MB 12ms 330K hrs
100GB 5400 rpm HM100JI 4 2 S-ATA 8MB 12ms 330K hrs
120GB 5400 rpm HM120JI 4 2 S-ATA 8MB 12ms 330K hrs
A
Section MEMORY AND ST ORA GE
28a SAMSUNG SEMICONDUCTOR, INC. SEPTEMBER 2006BR-06-ALL-001
Optical Storage
SN-M242D
Basic Specs
Horizontal/vertical drive mounting
Solenoid tray loading
Dimensions (WxHxD in mm):
Interface:P-ATA
2MB buffer memory
Seek Time (Average)
ROM/R/RW:120ms
DVD-Single:130ms
DVD-Dual:140ms
DVD-DL(±R):140ms
DVD±R/RW:140ms
Drive Speed
Read CD-ROM Max. 24X (3,600KB/sec)
Speed CD-RW Max.24X (3,600KB/sec)
DVD-Single Max.8X (10,800KB/sec)
DVD-Dual Max.6 (10,800KB/sec)
Write CD-R Max. 24X (3,600KB/sec)
Speed CD-RW Max.10X (1,500KB/sec)
US-RW Max.24X (3,600KB/sec)
US+ CD-RW Max.24X (3,600KB/sec)
Supported Disc
CD CD-DA;CD-ROM; CD-ROM
XA;CD-I; CD-Extra/CD-Plus;
Video-CD;CD-R;CD-RW &
HSRW;Super Audio CD; US
& US+ RW
DVD DVD-ROM;DVD-Dual; DVD-
Video;DVD-R;DVD+R;
DVD+RW;DVD-RW
Media Capacity
CD 650 MB CD-ROM (read only)
80mm CD (horizontal mount only)
800/700/650/ CD-Recordable (read & write)
700/650MB CD-Rewritable (read & write)
700/650MB High-Speed CD-Rewritable (read & write)
700/650MB Ultra & Ultra+ Speed CD-Rewritable
(read & write)
DVD 5/9/10/18 G DVD-Single/Dual (PTP,O TP) (read only)
3.9/4.7 G DVD-R (read only)
4.7G DVD+R (read only)
DVD±RW (read only)
80mm DVD
SN-S082D
Basic Specs
Horizontal/vertical drive mounting
Solenoid tray loading
Dimensions (WxHxD in mm):
128 x 12.7 x 127
Interface:P-ATA
2MB buffer memory
Seek Time (Average)
CD-ROM:130ms
NS CD-RW:130ms
HS/US CD-RW:130ms
DVD-Single:130ms
DVD-Dual:150ms
DVD-R/+R:150ms
DVD-RW/+RW:150ms
Drive Speed
Read CD-ROM Max. 24X (3,600KB/sec)
Speed CD-R Max.24X (3,600KB/sec)
NS CD-RW Max.24x
HS/US CD-RW Max.24x
DVD-Single Max.8x
DVD-Double Max.6x
DVD-R/+R Max.8x
DVD-RW/+RW Max.6x
DVD-RAM 5x
Write CD-R Max. 24X (3,600KB/sec)
Speed NS CD-RW 4X (600KB/sec)
HS CD-RW Max.10X (1,500KB/sec)
US/US+ RW Max.24X
DVD+R Max.8X
DVD+RW Max.8X (8x media) Max.
4x (4x media)
DVD+R DL Max.6x
DVD-R Max.8X
DVD-R DL Max,6x
DVD-RW Max 6X (6x media),Max.
4x (4x media)
Supported Disc
CD CD-DA;CD-ROM; CD-ROM
XA;CD-I/FMV;CD-Extra/CD-
Plus;Video-CD;CD-R;CD-
RW & HSRW;US & US +
RW;Super Audio CD
DVD DVD-ROM;DVD-Video;
DVD-R;DVD+R; DVD±RW;
DVD+R DL;DVD-R DL;
support DVD-R/RW CPRM
(read/write);DVD-RAM
(read only)
Media Capacity
CD 650MB CD-ROM (read only)
120mm/80mm CD
800/700/650MB CD-Recordable (read & write)
700/650MB CD-Rewritable (read & write)
700/650MB High-Speed CD-Rewritable (read & write)
700/650MB Ultra & Ultra+ Speed CD-Rewritable
(read & write)
DVD 5/9/10/18 G DVD-Single/Dual (PTP,O TP) (read only)
3.9/4.7 G DVD-R (read only)
4.7G DVD+R (read only)
DVD±RW (read only)
80mm DVD
29a
SAMSUNG SEMICONDUCTOR, INC.
BR-06-ALL-001
SEPTEMBER 2006
A
Section
MEMORY AND ST ORA GE
Optical Storage
SH-S182M
Basic Specs
Horizontal/vertical drive mounting
Solenoid tray loading
Dimensions (WxHxD in mm):
148.2 x 42 x 170
Interface:P-ATA
(Light Scribe)
2MB buffer memory
Seek Time (Average)
CD-ROM/R/RW:110ms
DVD-Single:130ms
DVD-Dual:140ms
DVD±R/RW:140ms
Drive Speed
Read DVD-ROM Max.16X (21,600KB/sec)
Speed DVD-RAM Max.12X (16200KB/sec)
DVD-Dual
DVD± RW Max. 8X (10,800KB/sec)
DVD±R Max.12X (16,200KB/sec)
DVD±R DL Max.8X (10,800KB/sec)
CD-ROM Max.48X (7,200 KB/sec)
CD-R/CD-RW Max.40X (6,000 KB/sec)
Write DVD-RAM Max.12X (16,200 KB/sec)
Speed DVD+R Max.18X (24,300KB/sec)
DVD-R Max.18X (24,300KB/sec)
DVD±RW Max.8X (10,800KB/sec),
6X (8,100KB/sec)
DVD±R Double L Max.8X (10,800/sec)
CD-R Max.48X (7,200KB/sec)
HS-RW Max.10X (1,500KB/sec)
US-RW Max.32X (4,800KB/sec)
Supported Disc
CD CD-DA;CD-ROM; CD-ROM
XA;CD-I; CD-Extra/CD-Plus;
Video-CD;CD-R;CD-RW
DVD DVD-ROM;DVD-Video;
DVD-R;DVD+R; DVD_R DL;
DVD±RW;DVD-RAM
Media Capacity
CD 120mm CD-ROM (read only)
80mm CD (horizontal mount only)
800/700/650MB CD-Recordable (read & write)
700/650MB Low/High/Ultra-Speed CD Rewritable
(read & write)
DVD 5/9/10/18G DVD-Single/Dual (PTP,O TP) (read only)
3.9/4.7G DVD-ROM (read only)
DVD±RW,DVD±R,DVD±R DL (read & write)
80mm DVD (horizontal mount only)
SH-S182D
Basic Specs
Horizontal/vertical drive mounting
Solenoid tray loading
Dimensions (WxHxD in mm):
148.2 x 42 x 170
Interface:P-ATA
2MB buffer memory
Seek Time (Average)
CD-ROM/R/RW:110ms
DVD-Single:130ms
DVD-Dual:140ms
DVD±R/RW:140ms
Drive Speed
Read DVD-ROM Max.16X (21,600KB/sec)
Speed DVD-RAM Max.12X (16200KB/sec)
DVD-Dual
DVD± RW Max. 8X (10,800KB/sec)
DVD±R Max.12X (16,200KB/sec)
DVD±R DL Max.8X (10,800KB/sec)
CD-ROM Max.48X (7,200 KB/sec)
CD-R/CD-RW Max.40X (6,000 KB/sec)
Write DVD-RAM Max. 12X (16,200 KB/sec)
Speed DVD+R Max.18X (24,300KB/sec)
DVD-R Max.18X (24,300KB/sec)
DVD±RW Max.8X (10,800KB/sec),
6X (8,100KB/sec)
DVD±R Double L Max.8X (10,800/sec)
CD-R Max.48X (7,200KB/sec)
HS-RW Max.10X (1,500KB/sec)
US-RW Max.32X (4,800KB/sec)
Supported Disc
CD CD-DA;CD-ROM; CD-ROM
XA;CD-I; CD-Extra/CD-Plus;
Video-CD;CD-R;CD-RW
DVD DVD-ROM;DVD-Video;
DVD-R;DVD+R; DVD_R DL;
DVD±RW;DVD-RAM
Media Capacity
CD 120mm CD-ROM (read only)
80mm CD (horizontal mount only)
800/700/650MB CD-Recordable (read & write)
700/650MB Low/High/Ultra-Speed CD Rewritable
(read & write)
DVD 5/9/10/18G DVD-Single/Dual (PTP,O TP) (read only)
3.9/4.7G DVD-ROM (read only)
DVD±RW,DVD±R,DVD±R DL (read & write)
80mm DVD (horizontal mount only)
SYSTEM LSI
ASICs
ASIC ORDERING INFORMATION
LCD DRIVER ICs
LCD DRIVER IC ORDERING INFORMATION
MOBILE APPLICA TION PROCESSORS
CMOS IMAGE SENSORS
MICROCONTROLLERS
MICROCONTROLLER ORDERING INFORMATION
SERIAL EPROMS
SECTION B PAGE
3b – 5b
6b
7b – 8b
9b
10b
10b
11b-14b
15b
16b
SEPTEMBER 2006 BR-06-ALL-002 3b
B
Section
SYSTEM LSI
ASIC
SAMSUNG SEMICONDUCTOR, INC.
ASIC TECHNOLOGY LIBRAR Y
Technology Library Core Voltage Core Voltage I/O Receive I/O Drive Maximum
Name Name(s) Description (Nominal) (V) Tolerance (V) Voltage (V) Voltage (V) Vgs (V)
LF13 MFL150 0.13µm Merged Flash Memory with Logic 1.2 -0.1 2.5/3.3/5.0T 2.5/3.3 3.3
LD13 MDL150 0.13µm Merged DRAM with Logic 1.2 -0.1 2.5/3.3/5.0T 2.5/3.3 3.3
L13 STDH150 0.13µm High-Speed Standard Cell with L13HS 1.2 -0.1 2.5/3.3/5.0T 2.5/3.3 3.3
STDH150HD 0.13um High-Density Standard Cell with L13HS 1.2 -0.1 2.5/3.3/5.0T 2.5/3.3 3.3
STD150 0.13µm High-Density Standard Cell with L13G 1.2 -0.1 2.5/3.3/5.0T 2.5/3.3 3.3
STD150HS 0.13um High-Speed Standard Cell with L13G 1.2 -0.1 2.5/3.3/5.0T 2.5/3.3 3.3
STD150HVT ”0.13um Low-Leakage and High-Density Standard Cell
with L13G High-VTH option“ 1.2 -0.1 2.5/3.3/5.0T 2.5/3.3 3.3
STD150OD ”0.13um High-Speed Standard Cell with L13G
Over-Drive option“ 1.5 -0.1 2.5/3.3/5.0T 2.5/3.3 3.3
STD150HVTOD "0.13um Low-Leakage and High-Density Standard Cell
with L13G High-VTH and Over-Drive option" 1.5 -0.1 2.5/3.3/5.0T 2.5/3.3 3.3
STDL150 ”0.13µm Low Leakage and High-Density Standard Cell
with L13LP“ 1.5 -0.1 1.5/2.5/3.3/5.0T 1.5/2.5/3.3 3.3
LF18 MFL130 0.18µm Merged Flash Memory with Logic 1.8 -0.15 1.8/2.5/3.3/5.0T 1.8/2.5/3.3 3.3
LD18 MDL130 0.18µm Merged DRAM with Logic 1.8 -0.15 1.8/2.5/3.3/5.0T 1.8/2.5/3.3 3.3
L18 STD130 0.18µm High-Density Standard Cell with L18 1.8 -0.15 1.8/2.5/3.3/5.0T 1.8/2.5/3.3 3.3
STD131 0.18µm High-Speed Standard Cell with L18 1.8 -0.15 1.8/2.5/3.3/5.0T 1.8/2.5/3.3 3.3
STDL130 ”0.18µm Low Leakage and High-Density
Standard Cell with L18LP“ 1.8 -0.15 1.8/2.5/3.3/5.0T 1.8/2.5/3.3 3.3
STDL131 ”0.18um Low Leakage and High Performance
Standard Cell with L18LP“ 1.8 -0.15 1.8/2.5/3.3/5.0T 1.8/2.5/3.3 3.3
L25 STD110 0.25µm High-Density Standard Cell 2.5 -0.2 2.5/3.3/5.0 2.5/3.3 3.3
STDM110 0.25µm Low Voltage High-Density Standard Cell 1.8 -0.15 2.5/3.3/5.0 2.5/3.3 3.3
STD111 0.25µm High Performance Standard Cell 2.5 -0.2 2.5/3.3/5.0 2.5/3.3 3.3
LF35 MFL90 0.35µm Merged Flash Memory with Logic 3.3 -0.3 3.3/5.0 3.3 3.3
L35H STDH90 0.35µm High-Density Standard Cell with dual gate oxide 3.3 -0.3 3.3/5.0 3.3/5.0 5
L35 STD90 0.35µm High-Density Standard Cell 3.3 -0.3 3.3/5.0 3.3 3.3
ASIC FOUNDRY TECHNOLOGY LIBRARY
Technology Process Core Voltage I/O Voltage Cell Size
G/HS/LP/RF/MS L09 90nm 1.0~1.2V 1.8~3.3V SRAM :0.79~1.25 um2
G/HS/LP/RF L06 65nm (Common Platform) 1.0~1.2V 1.8V~2.5V SRAM : 0.499~0.676 um2
Logic L13 0.13um 1.2~1.5V 2.5~3.3V SRAM : 1.85~2.43 um2
(Embedded DRAM) LD13 0.13um 1.0~1.5V 2.5~3.3V DRAM : 0.34 um2
MDL LD18 0.18um 1.8V 3.3V/5V DRAM :0.45 um2
(Embedded Flash) LFS13 0.13um 1.0~1.5V 2.5~3.3V Flash : <0.28 um2
MFL LF18 0.18um 1.8V 3.3V/5V Flash :0.63 um2
(Embedded Flash) LF13 0.13um 1.0~1.5V 2.5~3.3V Flash : 0.45 um2
BiCMOS BH3515 0.35um 15V 3.3V/5V
BH3505 0.35um 5V 3.3V/5V
BH1805 0.18um 1.8V 3.3V/5V
BH1305 0.13um 1.2V~1.5V 2.5/3.3V
RF (SiGe BiCMOS) BS3550 0.35um 3.3V 3.3V/5V fT :50GHz
BS1850 0.18um 1.8V 2.5~3.3V fT : 120GHz
BS13200 0.13um 1.2V~1.5V 2.5~3.3V fT : 200GHz
B
Section SYSTEM LSI
4b
ASIC
SAMSUNG SEMICONDUCTOR, INC.
ASIC DIGITAL CORES
DSP Cores CPU Cores Interface Cores BUS Architecture
•SSP1820 (OAK Compatible 16-Bit DSP Core) •SAM17(8)X (ARM7TDMI Compatible RISC Processor) USB1.1 Function Controller •AMBA2.0 (Micro Pack v2.0)
•TeakLite (TeakLite Compatible 16-Bit DSP Core) •SAM40X (ARM9TDMI Compatible RISC Processor) USB2.0 Function Controller •AMBA3.0 (ADK)
•Teak (Teak Compatible 16-Bit DSP Core) •SAM42X (ARM920T Compatible RISC Processor) USB1.1 Host Controller
•SAM44X (ARM940T Compatible RISC Processor) USB FS OTG Controller
USB2.0 Phy (L18)
USB2.0 Phy (L13)
•ARM920T (ARM920T Compatible RISC Processor) IEEE1394a Link
•ARM940T (ARM940T Compatible RISC Processor) IEE1394a DV Link
•ARM926EJS (ARM926EJ-S Compatible RISC Processor) IEEE1394a Phy (L18)
•ARM1020E (ARM1020E Compatible RISC Processor) PCI Bridge
•ETM9 (Embedded Trace Macrocell for ARM9 core) PCI Device
•ETM7 (Embedded Trace Macrocell for ARM7 core) PCI2AHB
•ARM946E-S (ARM946E-S Compatible RISC Processor) Ethernet MAC (10/100)
•ARM7TDMI-S (ARM7TDMI-S Compatible RISC Processor)
•ARM1136JF-S (ARM1136JF-S Compatible RISC Processor)
SEPTEMBER 2006BR-06-ALL-002
ASIC LEGACY FOUNDRY
Product Technology Feature Production Comments
CMOS Legacy 2.0µm ~ 0.5µm S/D Poly, D/TLM Foundry 5V with Mixed Signal (Optional)
Hi Voltage CMOS 0.8µm ~ 0.13µm S/D Poly, D/TLM Foundry 12, 13V, 15V, 20V, 30V, 45V
EEPROM 0.8µm ~ 0.35µm D Poly,D/TLM Foundry
CIS 0.8µm ~ 0.5µm S/D Poly, D/TLM Foundry B&W, RGB, Full Color
ASIC CORE LIBRARY
I/O LIBRARY 0.35µm 0.25µm 0.18µm ----0.13µm---
STD90 /STDM90 STD110 STD130 STD150HS STD150G STD150LP
I/O CMOS,TTL I/O Buffers A A A A A A
I/O-IP 3/5V tolerant A A A A A A
Slew control A A A A A A
PVT impedance control NA G G G G G
True 5V I/O A NA NA NA NA NA
AGP4X NA NA NA NA NA NA
ATA5 A A AR AR AR AR
ATA6 NA NA AR G AR AR
CardBus/PCI AR AR AR AR AR AR
GTL A AR AR G G G
HSTL G G AR G G G
IEEE1284 A NA NA NA NA NA
LVDS G AR AR AR AR AR
OSC (KHz) A A A A A A
OSC (MHz) A A A A A A
PCI A A AR AR AR AR
PECL AR AR AR G G G
SSTL AR A AR AR AR AR
Ultra2- SCSI (LVD) D NA NA NA NA NA
USB1.1 A A A A A A
NOTES: * I/O review sheet (I/O interface for I/O-IP review sheet in NCTS (New Cell Traveler Sheet)
1 A = Available 6 E = Under development (design and layout will be finished by the date)
2 AR = Available upon Request 7 F = Scheduled (design and layout will be finished by the date)
3 B = Under test (test will be finished by the date) 8 G = Will be developed based upon customer's request (SEC has more than 90% confidence for silicon result)
4 C = In fabrication line (fab.out date) 9 TBD = To Be Determined
5 D = GDS is available but silicon has not been verified 10 NA = Not Available
(SEC has more than 90% confidence in silicon result) * For further information, please contact: jhprk@samsung.co.kr
B
Section
SYSTEM LSI
5b
ASIC
SAMSUNG SEMICONDUCTOR, INC.
SEPTEMBER 2006 BR-06-ALL-002
ASIC MIXED-SIGNAL IPs
High Resolution & Performance for Low-Voltage Mixed-Signal Full Customer Support
Mixed-Signal Cores (based on proven silicon) Cores for SoC Specific Cores
•ADC: 1.8V 8-bit 250MHz ADC •ADC: 1.2V 8-bit 30MHz ADC •Support for various kinds of MSC architectures
1.8V 10-bit 150MHz ADC 1.2V 10-bit 100MHz ADC
3.3V 14-bit 80MHz ADC
•DAC:3.3V 8-bit 300MHz DAC • DAC: 1.2V 8-bit 2MHz DAC •The shortest TAT for customer-specific cores
3.3V 12-bit 80MHz ADC
3.3V 14-bit 40MHz DAC
1.2V 8-bit 80MHz DAC
•PLL: 3.3V 800MHz FSPLL •PLL: 1.2V 100M/300M/500M FSPLL
1.8V 200MHz Pixel Clock Gen
1.2V 230MHz Dithered PLL
•CODEC: 3.3V 16-bit Audio DAC •CODEC: 2.5V 16-bit Audio DAC
3.3V 16-bit Audio CODEC
ASIC LINE-UP TABLE FOR COMPILED MEMORY
STD90 STD110 MDL120 STD130 STDL130 STDH150 STD150 STDL1
L35 L25 LD25 L18 L18L L13HS L13G L13LP
HD HD LP HD HD LP HD LP HD LP HD LP HD LP
SPSRAM A A A A A A A A A NA A A AR A
SPSRAMBW A A NA A A A A A A NA A A AR A
SPSRAMR NA NA NA NA A NA A NA A NA A A AR A
DPSRAM A A A A A A A A A NA A A AR A
DPSRAMBW NA NA NA NA A A A A A NA A A AR A
DPSRAMR NA NA NA NA NA NA NA NA A NA A A AR A
SPARAM A A A NA NA NA NA NA NA NA NA NA AR NA
SPARAMBW NA NA NA NA A NA A NA NA NA NA NA AR NA
ARFRAM NA A NA NA A NA NA NA NA NA NA NA NA NA
SRFRAM NA NA NA NA NA NA NA NA A NA A NA A NA
DROM @ Active A A A A A NA A NA NA NA NA NA NA NA
MROM @ Met-2 A A A A A NA A NA NA NA NA NA NA NA
VROM @ Via-1 NA NA NA NA NA NA NA NA A NA A NA A NA
FIFO NA NA NA NA A NA A NA AR NA AR NA AR NA
CAM NA NA NA NA A NA A NA AR NA A NA AR NA
HCSPSRAM NA NA NA NA A NA NA NA AR NA A NA AR NA
HCVROM @ Via-1 NA NA NA NA A NA NA NA AR NA A NA AR NA
NOTES: A = Available AR = Available Upon Request E = Under Development (design and layout will be finished by the date) NA = Not Available
B
Section SYSTEM LSI
6b
ASIC Ordering Information
SAMSUNG SEMICONDUCTOR, INC.
ASIC ORDERING INFORMATION
S 6 X X X X X X X X - X X X X
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
1. System LSI (S)
2. Large Classification:ASIC (6)
3. Small Classification
A : STN (Character) B : STN (Graphic)
C :TFT (Large) D :TFT (Mobile)
F :TFT (Midsmall) E : OELD
P : PDI (DUAL) T :TCON
V : Process Vehicle
4~7.
Serial No
8.Version
A~Z
*1st V ersion X
9~10. Mask Option
- STN (Character)
00~99 : Font
- STN (Graphic)
Mask Option
- TFT Device
Mask Option
11. " - "
12~14. P ackage T ype
- In Case of PKG
(12) Package Type
A : SDIP B : BUMP BIZ
C : CHIP BIZ E : LQFP
J : ELP K :TR
N : COB Q : QFP
S : SOP T :TQFP
W :WAFER X : ETQFP
(13) Reserved
- PKG Option
0 : none
1 : Special Handling 1 2 : Special Handling 2
3 : Special Handling 3 A :Test Condition 1
B : Customer Option 1 C :Customer Option 2
D : Customer Option 3 E : Customer Option 4
G : Customer Option 6 H : Customer Option 7
J : Customer Option 8 K : Customer Option 9
L : Customer Option 10 M :Customer Option 11
N : Customer Option 12 P :Customer Option 13
- WAFER
0 : BUMP 1 : NO BUMP
(14) Packing
- In Case of TAB / COF
(12)(13) Film Type
00~49 TAB
50~99 COF
(14) Revision
1st V ersion X
15. Custom
0 : No Grinding 1 : 250°æ10um
5 : 200±10um
8 : 300±10um (CHIP BIZ) 9 : 280°æ10um
A : 300±10um
C : 300±10um (Wafer)
G : 375±10um (CHIP BIZ) J : 425±10um
K : 400±10um L : 450±10um
M : 470±10um (Wafer) N : 470±10um
R : 350±10um (Wafer) U : 610±10um
V : 500±10um (CHIP BIZ)
W : 425±10um (Wafer)
X : 425±10um (CHIP BIZ)
Y : 470±10um (CHIP BIZ)
Z : No Grinding (CHIP / Wafer)
SEPTEMBER 2006BR-06-ALL-002BR-06-ALL-002
7b
B
Section
SYSTEM LSI
LCD Driver ICs
SAMSUNG SEMICONDUCTOR, INC.
SEPTEMBER 2006 BR-06-ALL-002BR-06-ALL-002
STN CHARACTER LCD DRIVER ICs
CG DC/DC Convert
Part Number Segment Common ROM (Ch.) CGRAM (Ch.) Interface (Bit) VDD (V) Vlcd (Max.V) (Times) Package
S6A0031 80 8 10160 (254) 80 (2) 8-Apr 2.4~5.5 6 Au bump chip
S6A0032 80 16 10160 (254) 80 (2) 8-Apr 2.4~5.5 6 Au bump chip
S6A0065 40 2.7~5.5 13 Bare die/64QFP
S6A0069 40 16 10080 (236) 512 (8) 8-Apr 2.7~5.5 13 Bare die/80QFP
S6A0070 80 16 8320 (224) 512 (8) 8-Apr 2.7~5.5 10 Bare die/Au bump chip
S6A0071 60 32 8400 (240) 512 (8) 8-Apr 2.4~5.5 13 2 Au bump chip/TCP
S6A0072 40 16 9600 (240) 160 (4) 8-Apr 2.7~5.5 11 Au bump chip
S6A0073 60 34 9600 (240) 512 (8) 4-Jan 2.7~5.5 13 2~3 Bare die
S6A0074 80 34 9600 (240) 512 (8) 4-Jan 2.7~5.5 13 2~3 Bare die
S6A0075 100 34 9600 (240) 512 (8) 4-Jan 2.7~5.5 13 2~3 Bare die
S6A0078 120 34 9600 (240) 512 (8) 4-Jan 2.7~5.5 13 2~3 Bare die/TCP
S6A0079 120 34 9600 (240) 512 (8) 4-Jan 2.7~5.5 13 2~3 Bare die
S6A0090 64 26 10240 (256) 160 (4) 4-Jan 2.4~5.5 11 2~3 Au bump chip/TCP
S6A0093 80 26 10240 (256) 320 (8) 4-Jan 2.4~5.5 6 4 Au bump chip/TCP
S6A0094* 80 34 21760 (544) 80 (6) 4-Jan 2.2~3.6 7 4 Au bump chip
S6A0067 80 2.7~5.5 10 Bare die/100QFP
S6A2068 60 16 8320 (224) 512 (8) 8-Apr 2.7~5.5 10 Bare die/
NOTES: Devices marked with an asterisk (*) are under development. Bare die is equivalent term with bare chip, pellet or die.
TCP (Tape Carrier Package) COF (Chip On Film) is available in case of TCP.
STN GRAPHIC LCD DRIVER ICs DC/DC Convert
Part Number Segment Common DDRAM (Bits) Interface (Bit) VDD (V) Vlcd (Max.V) (Times) Package
S6B0107 64 1 4.5~5.5 17
S6B0086 V 80 4-Jan 2.7~5.5 28
S6B0715 100 33 8580 8-Jan 2.4~5.5 15 2~4 Au bump chip/TCP
S6B0717 100 55 6500 8-Jan 2.4~5.5 15 2~5 Au bump chip/TCP
S6B0718 104 81 9256 8-Jan 2.4~3.6 15 3~6 Au bump chip/TCP
S6B0719 160 105 16800 8-Jan 2.4~3.6 15 3~6 Au bump chip/TCP
S6B0723 132 65 8580 8-Jan 2.4~5.5 15 2~5 TCP
S6B0724 132 65 8580 8-Jan 2.4~5.5 15 2~5 Au bump chip
S6B0725 104 65 6860 8-Jan 2.4~3.6 15 2~5 Au bump chip
S6B0728 132 128 16896 8-Jan 2.4~3.6 15 3~7 Au bump chip/TCP
S6B0741 128 129 33024 8-Jan 1.8~3.3 15 3~6 TCP
S6B0755 128 65 8320 8-Jan 1.8~3.3 15 3~5 Au bump chip/TCP
S6B0756 96 65 6240 8-Jan 1.8~3.3 12 2~4 Au bump chip
S6B0759 128 81 10368 8-Jan 1.8~3.3 15 3~6 Au bump chip/TCP
S6B2400 96 65 12480 8-Jan 1.8~3.3 12 3~5 Au bump chip
S6B0794 160 160 8-Apr 2.4~5.5 32 Au bump chip/TCP
S6B0796 240 240 8-Apr 2.4~5.5 32 Au bump chip/TCP
S6B1713 132 65 8580 8-Jan 2.4~5.5 15 2~5 Au bump chip/TCP
NOTES: Bare die is equivalent term with bare chip, pellet or die.
TCP (Tape Carrier Package)
COF (Chip On Film) is available in case of TCP.
B
Section SYSTEM LSI
8b
LCD Driver ICs
SAMSUNG SEMICONDUCTOR, INC.
STN GRAPHIC COLOR LCD DRIVER ICs DC/DC Convert
Device Name Segment Common Color Depth DDRAM (Bits) VDD (V) Vlcd (Max.V) (Times) Package
S6B33A1 132 160 256/4k 266,112 1.8~3.6 20 V Au bump chip
S6B33A2 128 129 256/4k 196,608 1.8~3.3 20 V Au bump chip
S6B33B0 144 177 256/4k/65k 405,504 1.8~3.3 20 V Au bump chip
S6B3300* 104 80 256/4k 99,840 1.8~3.3 15 V Au bump chip
NOTES: Devices marked with an asterisk (*) are under development.
TCP (Tape Carrier Package)
Bare die is equivalent term with bare chip, pellet or die.
COF (Chip On Film) is available in case of TCP.
STN GRAPHIC LCD DRIVER ICs
Part Bit Map Area Vlcd
Number RGB Gate Color Depth (RAM) VCl(V) (Max. V) Package
S6D0110 132 176 260K 132*18*176 2.5~3.3 25V Max Au bumped chip
S6D0114 132 176 260K 132*18*176 2.5~3.3 25V Max Au bumped chip
S6D0117 132 132 260K 132*132*18 2.5~3.3 25V Max Au bumped chip
S6D0118 176 240 260K 176*18*240 2.5~3.3 25V Max Au bumped chip
S6D0123 132 176 260K 132*18*176 2.5~3.3 25V Max Au bumped chip
S6D0129 240 320 260K 240*18*320 2.5~3.3 30V Max Au bumped chip
NOTES: TCP (Tape Carrier Package)
COF (Chip On Film) is available in case of TCP
SEPTEMBER 2006BR-06-ALL-002
9b
B
Section
SYSTEM LSI
LCD Driver IC Ordering Information
SAMSUNG SEMICONDUCTOR, INC.
SEPTEMBER 2006 BR-06-ALL-002
LCD DRIVER IC ORDERING INFORMATION
S 6 X X X X X X X X - X X X X
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
1. System LSI (S)
2. Large Classification: LDI (6)
3. Small Classification
A : STN (Character) B : STN (Graphic)
C :TFT (Large) D :TFT (Mobile)
F :TFT (Midsmall) E : OELD
P : PDI (DUAL) T :TCON
V : Process Vehicle
4~7.
Serial No.
8.Version
A~Z
*1st V ersion X
9~10. Mask Option
- STN (Character)
00~99: Font
- STN (Graphic)
Mask Option
- TFT Device
Mask Option
11. " - "
12~14. P ackage T ype
- In Case of PKG
A : SDIP B : BUMP BIZ
C : CHIP BIZ E : LQFP
J : ELP K :TR
N : COB Q : QFP
S : SOP T :TQFP
W :WAFER X : ETQFP
(13) Reserved
- PKG Option
0 : none
1 :Special Handling 1 2 : Special Handling 2
3 :Special Handling 3 A :Test Condition 1
B :Customer Option 1 C :Customer Option 2
D :Customer Option 3 E :Customer Option 4
G :Customer Option 6 H :Customer Option 7
J :Customer Option 8 K :Customer Option 9
L :Customer Option 10 M :Customer Option 11
N :Customer Option 12 P :Customer Option 13
- WAFER
0 : BUMP 1 : NO BUMP
(14) Packing
- In Case of TAB / COF
(12)(13) Film Type
00~49 TAB
50~99 COF
(14) Revision
1st V ersion X
15. Back Lap
0 : No Grinding 1 : 250±10um
5 : 200±10um
8 : 300±10um (CHIP BIZ) 9 : 280±10um
A : 300±10um
C : 300±10um (Wafer)
G : 375±10um (CHIP BIZ) J : 425±10um
K : 400±10um L : 450±10um
M : 470±10um (Wafer) N : 470±10um
R : 350±10um (Wafer) U : 610±10um
V : 500±10um (CHIP BIZ)
W : 425±10um (Wafer)
X : 425±10um (CHIP BIZ)
Y : 470±10um (CHIP BIZ)
Z : No Grinding (CHIP / Wafer)
B
Section SYSTEM LSI
10b
Processors/HDTV Products
SAMSUNG SEMICONDUCTOR, INC. SEPTEMBER 2006BR-06-ALL-002
CMOS IMAGE SENSORS
Part Pixels Pixels Pixel
Number Type Resol. O/F Horizontal Vertical Size Package Production Status
S5K53BE SOC VGA 1/5.8" 640 480 4 wafer or die MP
S5KA3A SOC VGA 1/10" 640 480 2.25 wafer or die Sampling
S5K3AA SOC SXGA 1/3.2" 1280 1024 3.5 wafer or die MP
S5K4AA SOC SXGA 1/4" 1280 1024 2.8 wafer or die MP
S5K5AA SOC SXGA 1/5" 1280 1024 2.25 wafer or die Sampling
S5K3BAF SOC UXGA 1/3.2" 1600 1200 2.8 wafer or die Sampling
S5K3B1F CIS UXGA 1/3.2" 1600 1200 2.8 wafer or die Sampling
S5K4BA SOC UXGA 1/4" 2048 1024 2.25 wafer or die MP
S5K3C1F CIS QXGA 1/2.7" 2048 1536 2.5 wafer or die Under Development
NOTE: * O/F: Optical Format
MOBILE APPLICATION PROCESSORS
Part Max Memory Inteface Data Bus Features I/O Interrupt Timer/ Serial
Number CPU(Cache) Freq (bit) Pins (Ext) Counter Interface DMA PKG
S3C44B0 ARM7TDMI 66MHz ROM/SRAM 8,16,32 Mono/Color/Gray STN Cont., 71 31(8) WDT/16TCx5 UARTx2 4-ch 160LQFP
(8KB) SDRAM 10 ADC x 8 Internal 16TC IIC/IIS 160FBGA
S3C2412 ARM926EJ-S 200/266MHz ROM/SRAM 8,16,32 TFT/STN(65K) LCD Cont., 115 55(24) WDT/16TCx4 UARTx3 4-ch 272FBGA
(8KB-I,8KB-D) SDRAM/mSDRAM NAND Boot, 10 ADCx8(TSP), Internal 16TC SPIx2/IIC/IIS
NAND USB hostx2,USB device,
SD(SDIO)/MMC
S3C2413 ARM926EJ-S 266MHz ROM/SRAM 8,16,32 TFT/STN LCD Cont.,ATA Interfaces, 129 55(24) WDT/16TCx4 UARTx3 4-ch 289FBGA
(8KB-I,8KB-D) SDRAM/mSDRAM NAND Boot, 10 ADCx8(TSP), Internal 16TC SPIx2/IIC/IIS
DDR/mDDR USB hostx2, USB device,
NAND/oneNAND SD(SDIO)/MMC,Camera I/F
S3C2440 ARM920T 300MHz ROM/SRAM 8,16,32 TFT/STN LCD Controller, 130 59(24) WDT/16TCx4 UARTx3 4-ch 289FBGA
(16KB-I,16KB-D) 400MHz SDRAM/mSDRAM NAND Boot, 10 ADCx8(TSP), Internal 16TC SPIx2/IIC/IIS
NAND USB hostx2,USB device,
SD(SDIO)/MMC, Camera I/F
AC97
SC32442 ARM920T 300MHz Stacked with 8,16,32 TFT/STN LCD Controller, 130 59(24) WDT/16TCx4 UARTx3 4-ch 332FBGA
(16KB-I,16KB-D) 400MHz 32/64MB mSDRAM, NAND Boot, 10 ADCx8(TSP), Internal 16TC SPIx2/IIC/IIS
64/128MB NAND USB hostx2, USB device,
SD(SDIO)/MMC, Camera I/F
AC97
S3C24A0 ARM926EJ-S 266MHz ROM/SRAM 8,16,32 TFT/STN LCD Controller, 32 60(19) WDT/16TCx4 UARTx2(IrDA) 4-ch 337FBGA
(16KB-I, 16KB-D) SDRAM/mSDRAM AC97, Camera I/F, Internal 16TC SPI/IIC/IIS
NAND NAND Boot,10 ADCx8(TSP), IrDA(v1.1)
MPEG4 CODEC,SD(SDIO)/MMC
8bit Modem I/F(4KB dual),
Memory Stick
S3C2460 ARM926EJ-S 266MHz ROM/SRAM 8,16,32 TFT/STN LCD Controller, 154 61(16) WDT/16TCx4 UARTx3(IrDA) 4-ch 416FBGA
(16KB-I,16KB-D) SDRAM/mSDRAM AC97, Camera I/F, Internal 16TC SPIx2/IIC/IIS
Teak DSP mDDR/NAND NAND Boot, 10 ADCx8(TSP), IrDA(v1.1)
MPEG4 CODEC,SD(SDIO)/MMC
USB hostx2, USB device,USB OTG
2D,3D Graphic/Memory Stick
S3C2443 ARM920T 400MHz ROM/SRAM 8,16,32 TFT/STN LCD Controller, 174 69(23) WDT/16TCx4 UARTx4(IrDA) 6-ch 400FBGA
(16KB-I,16KB-D) 533MHz SDRAM/mSDRAM AC97, Camera I/F,ATA Interfaces, Internal 16TC SPIx2/IIC/IIS
DDR/mDDR NAND Boot, 10 ADCx10(TSP), IrDA(v1.1)
NAND/oneNAND SD(SDIO)/MMC/HS MMC
8bit Modem I/F(4KB dual),
USB hostx2, USB 2.0 Device
11b
B
Section
SYSTEM LSI
Image Sensors/Microcontrollers
SAMSUNG SEMICONDUCTOR, INC.
SEPTEMBER 2006 BR-06-ALL-002
4-BIT MICROCONTROLLER FAMILY
Part Name Package ROM RAM Interrupt Timer/ LCD ADC PWM(1) Max. OSC. OTP
Type Kbytes Nibble I/O Pins (Int/Ext) Counters SIO (Seg/Com) (Bit x Ch) (BitxCh) DTMF Freq. Vdd (V) Equivalent
S3C1xxx (KS51) Series
S3C1840DZ0-DKB1 20DIP 1 32 15/19 6MHz 1.8~3.6 n/a
S3C1840DZ0-SKB1 20SOP
S3C1840DZ0-SMB1 24SOP
S3C1850DZ0-SMB1 24SOP 1 32 19 6MHz 1.8~3.6 n/a
S3C1860XZ0-DKB1 20DIP 1 32 15 6MHz 1.8~3.6 n/a
S3C1860XZ0-SKB1 20SOP
S3C7xxx (KS57) Series
S3C7048DZ0-AQB4 42SDIP 4 512 36 3/4 BT/WT/8Tx2 Yes 6MHz 1.8~5.5 S3P7048D
S3C7048DZ0-QZR4 44QFP
S3C7048DZ0-AQB8 42SDIP 8
S3C7048DZ0-QZR8 44QFP
S3C70F4XZ0-AVB4 30SDIP 4 512 24 3/2 BT/WT/8TC Yes Comx4 6MHz 1.8~5.5 S3P70F4X
S3C70F4XZ0-SOB4 32SOP
S3C7235DZ0-QWR8 80QFP 8 512 40 3/3 BT/WT/WDT/8T Yes 32/4 6MHz 1.8~5.5 S3P7235X
S3C7235DZ0-QWR5 16
S3C72H8XZ0-QTR8 64QFP 8 512 21 3/3 BT/WT/WDT/8T/16T 26/4 Comx2 6MHz 1.8~5.5 S3P72H8X
S3C72K8XZ0-QWR8 80QFP 8 1024 27 3/4 BT/WT/8TC Yes 40/8 Comx2 6MHz 2.0~5.5 S3P72K8X
S3C72M9XZ0-QAR5 128QFP 16 3840 51 5/4 BT/WT/WDT/8T/16T Yes 80/16 Comx3 6MHz 1.8~5.5 S3P72M9X
S3C72M9XZ0-QAR7 24
S3C72M9XZ0-QAR9 32
S3C72N5XZ0-QWR8 80QFP 8 512 40 3/3 BT/WT/8TC Yes 32/4 6MHz 1.8~5.5 S3P72N5X
S3C72N5XZ0-QWR5 16
S3C72P9XZ0-QXR5 100QFP 16 1056 39 4/4 BT/WT/8TC/16TC Yes 56/16 6MHz 1.8~5.5 S3P72P9X
S3C72P9XZ0-QXR7 24
S3C72P9XZ0-QXR9 32
S3C72Q5XZ0-QXR8 100QFP 8 5264 39 3/3 BT/WT/8TCx2 60/12 6MHz 1.8~5.5 S3P72Q5X
S3C72Q5XZ0-QXR5 16
S3C7324XZ0-QTR4 64QFP 4 256 32 2/3 BT/WT/WDT/8T 28/4 8x4 6MHz 1.8~5.5 S3P7324X
S3C7335XZ0-QWR8 80QFP 8 512 56 4/4 BT/WT/WDT/8T Yes 28/4 8x4 6MHz 1.8~5.5 S3P7335X
S3C7335XZ0-QWR5 16
S3C7414DZ0-AQB4 42SDIP 4 256 35 5/3 BT/WT/WDT/8Tx2 Yes 8x6 (8x1) 6MHz 1.8~5.5 S3P7414D
S3C7414DZ0-QZR4 44QFP
S3C7515DZ0-ATB5 64SDIP 16 512 55 4/3 BT/WT/8Tx2 Yes Yes 6MHz 2.0~5.5 S3P7515D
S3C7515DZ0-QTR5 64QFP
S3C7528DZ0-AQB4 42SDIP 4 768 35 3/3 BT/WT/WDT/8Tx2 Yes 6MHz 1.8~5.5 S3P7528D
S3C7528DZ0-QZR4 44QFP
S3C7528DZ0-AQB8 42SDIP 8
S3C7528DZ0-QZR8 44QFP
S3C7544XZ0-AMB4 24SDIP 4 512 17 2/2 BT/WDT/8T 6MHz 1.8~5.5 S3P7544X
S3C7544XZ0-SMB4 24SOP
S3C7559XZ0-ATB9 64SDIP 32 1024 55 4/3 BT/WT/WDT/8Tx2 Yes Yes 6MHz 1.8~5.5 S3P7559X
S3C7559XZ0-QTR9 64QFP
S3C7565XZ0-QXR5 100QFP 16 5120 49 5/4 BT/WT/WDT/8T/16T Yes 60/16 Yes 6MHz 1.8~5.5 S3P7565X
S3C7588AZ0-C0C8 44Pellet 8 768 25 4/4 BT/WT/WDT/8TCx2 Yes 3.58MHz 2.7~5.5 S3P7588X
NOTES: *Under development. Contact Samsung
sales office for availability.
(1) ( ) S/W supported PWM
(2) SIO mode can be selected by S/W
(3) Flash:Writing endurance is 10K times
(4) MTP:Writing endurance is 100 times
Abbreviations:
ADC=Analog to Digital Converter
DTMF=Dual Tone Multi Frequency
CAS=CPE Alerting Signal
PWM=Pulse Width Modulation
SIO=Serial Input/Output
8T/16T=8-bit /16-bit Timer
BT/WT/WDT=Basic/W atch/W atchdog T imer
DAC=Digital to Analog Converter
ZCD=Zero Cross Detection circuit
Com=Comparator
FSK=Frequency Shift Keying
B
Section SYSTEM LSI
12b
Microcontrollers
SAMSUNG SEMICONDUCTOR, INC. SEPTEMBER 2006BR-06-ALL-002
8-BIT MICROCONTROLLER FAMILY
Part Name Package ROM RAM Interrupt Timer/ Serial LCD ADC PWM(1) Max. OSC. OTP or Flash
Type Kbytes Bytes I/O Pins (Int/Ext) Counter Interface (Seg/Com) (Bit x Ch) (BitxCh) Freq. Vdd (V) Equivalent
S3C9xxx (KS86) Series
S3C9228AZ0-AQB8 42SDIP 8 256 36 4/10 BT/WT/8TCx2 SIO 16x8 10x4 8MHz 2.0~5.5 S3P9228A
S3C9228AZ0-QZR8 44QFP
S3C9228AZ0-LRR8 48ELP
S3C9234XZ0-QTR4 64QFP 4 208 52 5/7 BT/WT/8TCx2 SIO 32/4 8MHz 2.0~5.5 S3P9234X
S3C9404DZ0-AVB4 30SDIP 4 208 22 3/3 BT/WDT/8Tx2 8x8 (10x1) 10MHz 2.7~5.5 S3P9404D
S3C9404DZ0-SOB4 32SOP
S3C9428XZ0-SNB4 28SOP 4 208 24 5/4 BT/WDT/8Tx2 IIC,SIO 10x12 12x2, (8x1) 16MHz 1.8~5.5 S3P9428X
S3C9428XZ0-SOB4 32SOP
S3C9428XZ0-AVB4 30SDIP
S3C9428XZ0-SNB8 28SOP 8
S3C9428XZ0-SOB8 32SOP
S3C9428XZ0-AVB8 30SDIP
S3C9434XZ0-DIB4 18DIP 4 112 11/13 3/2 BT/WDT/8T SIO 10x5 12x1 16MHz 3.0~5.5 S3P9434X
S3C9434XZ0-DKB4 20DIP
S3C9434XZ0-SKB4 20SOP
S3C9444XZ0-SCB4 8SOP 4 208 6 1/2 BT/8TC 10x3 10MHz 2.0~5.5 S3F9444X(4)
S3C9444XZ0-DCB4 8DIP
S3C9454BZ0-DHB4 16DIP 4 208 14/18 2/2 BT/8TC 10x9 8x1 10MHz 2.0~5.5 S3F9454B(4)
S3C9454BZ0-SHB4 16SOP
S3C9454BZ0-VHB4 16TSSOP
S3C9454BZ0-DKB4 20DIP
S3C9454BZ0-SKB4 20SOP
S3C9454BZ0-VKB4 20SSOP
S3C9488XZ0-AOB8 32SDIP 8 208 26/36/38 6/4 BT/8T UART 19/8 10x9 10MHz 2.2~5.5 S3F9488X(4)
S3C9488XZ0-SOB8 32SOP
S3C9488XZ0-AQB8 42SDIP
S3C9488XZ0-QZR8 44QFP
S3C9498XZ0-SNB8 28SOP 8 208 22/24/26 11/5 BT/8TCx4/16TC SIO,UART 10x8 12x1,(8x1) 8MHz 2.0~5.5 S3F9498X(4)
S3C9498XZ0-SOB8 32SOP
S3C9498XZ0-AOB8 32SDIP
S3C9498XZ0-AVB8 30SDIP
S3C94A5XZ0-QZR5 44QFP 16 368 34 8/15 BT/WT/8TC/16TCx2 SIO 10x16 8x1, 16x2 12MHz 2.0 ~5.5 S3F94A5X(4)
S3C94A5XZ0-AQB5 42SDIP
S3C9688XZ0-AQB8 42SDIP 8 208 32 15/14 BT/WDT/8T USB 6MHz 4.0~5.25 S3P9688X
S3C9688XZ0-QZR8 44QFP
S3C8xxx (KS88) Series
S3C80A5BZ0-SMB8 24SOP 8 272 19 5/8 BT/WDT/8Tx2/16T 8x1 8MHz 2.0~3.6 S3P80A5A
S3C80A5BZ0-AMB8 24SDIP
S3C80A5BZ0-SMB5 24SOP 16
S3C80A5BZ0-AMB5 24SDIP
S3C80B5XZ0-SMB8 24SOP 8 272 19 5/8 BT/WDT/8Tx2/16T 8x1 4MHz 1.7~3.6 S3P80B5X
S3C80B5XZ0-AMB8 24SDIP
S3C80B5XZ0-SMB5 24SOP 16
S3C80B5XZ0-AMB5 24SDIP
S3C80C5XZ0-SMB8 24SOP 8 272 19 5/8 BT/WDT/8Tx2/16T 8x1 4MHz 1.7~3.6 S3P80C5X
S3C80C5XZ0-AMB8 24SDIP
S3C80C5XZ0-SMB5 24SOP 16
S3C80C5XZ0-AMB5 24SDIP
S3C80F9BZ0-SOB7 32SOP 24 272 38 5/16 BT/8TC/16TC 8x1 8MHz 2.0~5.0 S3P80F9X
S3C80F9BZ0-AQB7 42SDIP
S3C80F9BZ0-QZR7 44QFP
S3C80F9BZ0-LRR7 48ELP
S3C80F9BZ0-SOB9 32SOP 32
S3C80F9BZ0-AQB9 42SDIP
S3C80F9BZ0-QZR9 44QFP
S3C80F9BZ0-LRR9 48ELP
S3C80G9BZ0-SNB7 28SOP 24 272 38 5/16 BT/8TC/16TC 8x1 4MHz 1.7~3.6 S3P80G9X
S3C80G9BZ0-SOB7 32SOP
S3C80G9BZ0-AQB7 42SDIP
S3C80G9BZ0-QZR7 44QFP
S3C80G9BZ0-SNB9 28SOP 32
S3C80G9BZ0-SOB9 32SOP
S3C80G9BZ0-AQB9 42SDIP
S3C80G9BZ0-QZR9 44QFP
S3C80J9XZ0-S0B9 32SOP 32 272 26 12/10 BT/8T/16T 8x1 8MHz 1.95~3.6 S3F80J9X(3)
S3C80J9XZ0-SNB9 28SOP
S3C80JBXZ0-QZRB 44QFP 64 272 38 14/10 BT/8T/16Tx2 COMx4 8x1 8MHz 1.95~3.6 S3F80JBX(3)
13b
B
Section
SYSTEM LSI
Microcontrollers
SAMSUNG SEMICONDUCTOR, INC.
SEPTEMBER 2006 BR-06-ALL-002
8-BIT MICROCONTROLLER FAMILY
Part Name Package ROM RAM Interrupt Timer/ Serial LCD ADC PWM(1) Max. OSC. OTP or Flash
Type Kbytes Bytes I/O Pins (Int/Ext) Counter Interface (Seg/Com) (Bit x Ch) (BitxCh) Freq. Vdd (V) Equivalent
S3C8xxx (KS88) Series
S3C80JBXZ0-AQBB 42SDIP
S3C80JBXZ0-SOBB 32SOP 14/10
S3C80L4XZ0-AOB4 32SDIP 4 144 26 2/8 BT/8TC 8x1 8MHz 2.0~5.5 S3F80L4X(4)
S3C80L4XZ0-SOB4 32SOP
S3C80L4XZ0-SNB4 28SOP
S3C80M4XZ0-DKB4 20DIP 4 128 15/11 2/4 BT/8TC 8x1 10MHz 2.0~5.5 S3F80M4X(4)
S3C80M4XZ0-SKB4 20SOP
S3C80M4XZ0-DHB4 16DIP
S3C80M4XZ0-SHB4 16SOP
S3C8235BZ0-QTR8 64QFP 8 552 32 8/8 BT/8TCx2/16TC 24/8 10x8 8x2 8MHz 2.0~5.5 S3F8235X(4)
S3C8235BZ0-ETR8 64LQFP
S3C8235BZ0-QTR5 64QFP 16
S3C8235BZ0-ETR5 64LQFP
S3C8245AZ0-TWR8 80TQFP 8 544 45 8/8 BT/WDT/8Tx2/16Tx2 SIO 32/4 10x8 (8x2, 16x1) 10MHz 1.8~5.5 S3P8245X
S3C8245AZ0-QWR8 80QFP
S3C8245AZ0-TWR5 80TQFP 16
S3C8245AZ0-QWR5 80QFP
S3C8249XZ0-TWR7 80TQFP 24 1056 45 8/8 BT/WDT/8Tx2/16Tx2 SIO 32/4 10x8 (8x2,16x1) 10MHz 1.8~5.5 S3P8249X
S3C8249XZ0-QWR7 80QFP
S3C8249XZ0-TWR9 80TQFP 32
S3C8249XZ0-QWR9 80QFP
S3C825ACZ0-TWRA 80TQFP 48 2096 67 11/12 BT/WT/8TC/16TC SIO,UART 28/8 10x4 (8x1, 16x1) 8MHz 2.0~5.5 S3P825AX
S3C825ACZ0-QWRA 80QFP
S3C826AXZ0-QCRA 144QFP 48 2k 128 9/12 BT/8TCx3/16TC SIO 80/16 8x4 8x2 8MHz 2.0~5.5 S3P826AX
S3C8274XZ0-QTR4 64QFP 4 256 52 4/8 WT/BT/8TCx2 SIO 32/4 8MHz 2.0~3.6 S3F8274X(4)
S3C8274XZ0-ETR4 64LQFP
S3C8275XZ0-QTR5 64QFP 16 512 S3F8275X(3)
S3C8275XZ0-ETR5 64LQFP
S3C8278XZ0-QTR8 64QFP 8 256 S3F8278X(4)
S3C8278XZ0-ETR8 64LQFP
S3C8285XZ0-QWR5 80QFP 16 512 65 10/8 BT/WT/8TCx2/16TCx2 UART, SIO 32/8 10x8 8x1,16x1 11.1MHz 2.0~3.6 S3F8285X(4)
S3C8285XZ0-TWR5 80TQFP
S3C8289XZ0-QWR9 80QFP 32 1024 S3F8289X(4)
S3C8289XZ0-TWR9 80TQFP
S3C828BXZ0-QWRB 80QFP 64 2560 S3F828BX(3)
S3C828BXZ0-TWRB 80TQFP
S3C82E5XZ0-QZR5 44QFP 16 208 38 5/4 BT/WT/8TC SIO 23/4 8MHz 2.0~3.6 S3F82E5X(4)
S3C82E5XZ0-TBR5 48TQFP
S3C82F5XZ0-QXR5 100QFP 16 2.5K 44 6/12 BT/WT/8TCx2/16TC SIO 60/16 8x1 8MHz 2.0~5.0 S3F82F5X(4)
S3C82F5XZ0-TXR5 100TQFP
S3C830AXZ0-QXRA 100QFP 48 2084 72 10/8 BT/WDT/8Tx2/16T SIOx2 40/4 8x4 8x1 4.5MHz 3.0~5.5 S3P830AX
S3C831BXZ0-QXRB 100QFP 64 2.5K 72 10/8 BT/WDT/WT/8Tx2/16T SIOx2 40/4 8x8 8x1 9MHz 2.2~5.5 S3P831BX
S3C831BXZ0-TXRB 100TQFP
S3C8325XZ0-QWR5 80QFP 16 512 64 9/12 BT/WDT/WT/8Tx2/16T SIO 28/8 8x8 8x1 4.5MHz 2.0~5.5 S3P8325X
S3C8325XZ0-TWR5 80TQFP
S3F833BXZ0-QXRB 100QFP 64 2.5K 86 13/8 BT/WDT/WT/8Tx2/16T SIOx2, UARTx2 40/8 10x12 8x1 12MHz 2.0~3.6 Flash Only
S3F833BX(4)
S3F834BXZ0-TXRB 100TQFP 64 2.5K 86 13/8 BT/WDT/WT/8Tx2/16T SIOx2, UARTx2 40/8 10x12 8x1 12MHz 2.0~3.6 Flash Only
S3F834BX(4)
S3C8454XZ0-TWR4 80TQFP 4 1040 42 8/8 BT/WDT/8Tx2/16Tx2 SIO 8x4 8x2,(16x2) 25MHz 4.5~5.5 S3P8454X
S3C8454XZ0-QWR4 80QFP
S3C8469XZ0-ATB5 64SDIP 16 528 56 11/10 BT/WDT/8Tx2/16Tx2 UART, SIO 10x8 14x2, (8x2) 12MHz 2.7~5.5 S3P8469X
S3C8469XZ0-QTR5 64QFP
S3C8469XZ0-LTR5 64ELP
S3C8469XZ0-ATB9 64SDIP 32
S3C8469XZ0-QTR9 64QFP
S3C8469XZ0-LTR9 64ELP
S3C8475XZ0-AQB8 42SDIP 8 272 36 6/8 BT/WDT/8T/16T UARTx2 10x8 (8x1, 10x1) 12MHz 2.7~5.5 S3P8475X
S3C8475XZ0-QZR8 44QFP
S3C8475XZ0-AQB5 42SDIP 16
S3C8475XZ0-QZR5 44QFP
S3C848AXZZ-ATBA 64SDIP 48 2064 56 15/14 BT/8TCx4/16Tx2 UARTx2 SIO 10x8 14x2,(8x2) 12MHz 2.7~5.5 S3P848AX
S3C848AXZZ-QTRA 64QFP
B
Section SYSTEM LSI
14b
Microcontrollers
SAMSUNG SEMICONDUCTOR, INC. SEPTEMBER 2006BR-06-ALL-002
8-BIT MICROCONTROLLER FAMILY
Part Name Package ROM RAM Interrupt Timer/ Serial LCD ADC PWM(1) Max. OSC. OTP or Flash
Type Kbytes Bytes I/O Pins (Int/Ext) Counter Interface (Seg/Com) (Bit x Ch) (BitxCh) Freq. Vdd (V) Equivalent
S3C8xxx (KS88) Series
NOTES:
1 *Under Development.Contact Samsung sales office for availability
2 (1) ( ) S/W supported PWM
(2) SIO mode can be selected by S/W
(3) Flash:Writing endurance is 10K times
(4) MTP:Writing endurance is 100 times
3 Abbreviations:
LVR = Low Voltage Reset
ZCD=Zero Cross Detection circuit
FSK=Frequency Shift Keying
RDS=Radio Data System
DAC=Digital to Analog Converter
PWM=Pulse Width Modulation
SIO=Serial Input/Output
LIN=Local Interface Network
DTMF=Dual Tone Multi Frequency
DDC=Display Data Channel
SDT=Stuttered Dial Tone
BT/WT/WDT=Basic/Watch/Watchdog timer
8T/16T=8-bit /16-bit Timer
OSD=On Screen Display
ADC=Analog to Digital Converter
CAS=CPE Alerting Signal
LVD = Low Voltage Detector
PGM=Pattern Generation Module
Com=Comparator
S3C84A4XZ0-QTR4 64QFP 4 784 29 7/4 BT/8TCx2/16Tx2 8x4 8x2, (8x2) 30MHz 4.5~5.5 S3P84A4X
S3C84BBXZ0-TWRB 80TQFP 64 2064 70 14/10 BT/8TCx2/16TCx2/8Tx2 UARTx2, SIO 10x8 8*1 (DAC) 10MHz 2.7~5.5 S3F84BBX(3)
S3C84BBXZ0-QWRB 80QFP
S3C84DBXZ0-TWRB 100TQFP 64 2064 90 14/10 BT/8TCx4/16TCx2 UARTx2,SIO 48/8 10x8 8*1 (DAC) 10MHz 2.7~5.5 S3F84DBX(3)
S3C84DBXZ0-QWRB 100QFP
S3C84E9XZ0-AQB9 42SDIP 16 272 34/36 9/12 BT/WT/8T/8TC/16TCx2UART 10x8 (8x1) 12MHz 2.7~5.5 S3P84E9X
S3C84E9XZ0-QZR9 44QFP
S3C84H5XZ0-AOB5 32SDIP 16 272 22/20/18 12/4 BT/WT/8TCx2/16TCx2 UART, SIO 10x8 10x1 10MHz 2.4~5.5 S3F84H5X(4)
S3C84H5XZ0-SOB5 32SOP
S3C84H5XZ0-AVB5 30SDIP
S3C84H5XZ0-SNB5 28SOP
S3C84I8XZ0-AQB8 42SDIP 8 292 34/32 12/4 BT/WT/8TCx2/16TCx2 UART, SIO 16/8 10x8 10x1 10MHz 2.4~5.5 S3F84I8X(4)
S3C84I8XZ0-QZR8 44QFP
S3C84I9XZ0-AQB9 42SDIP 32 528 S3F84I9X(3)
S3C84I9XZ0-QZR9 44QFP
S3F84K4XZ0-DHB4 16DIP 4 208 11/18 2/2 BT/16(8X2)T 10x9 12x1 8MHz 2.0~5.5 Flash Only
S3F84K4X(4)
S3F84K4XZ0-SHB4 16SOP
S3F84K4XZ0-VHB4 16SSOP
S3F84K4XZ0-RHB4 16TSSOP
S3F84K4XZ0-DKB4 20DIP
S3F84K4XZ0-SKB4 20SOP
S3F84K4XZ0-VKB4 20SSOP
S3F84MBXZ0-TWRB* 80TQFP 64 2064 70 17/10 BT/8TCx2/16TCx2/8Tx2 UARTx3, SIOz2 10x5 8x2 10MHz 2.4~5.5 Flash Only
S3F84MBX(3)
S3F84MBXZ0-QWRB* 80QFP
S3F84P4XZ0-SCB4* 8SOP 4 208 6 2/2 BT/16(8X2)T 10x4 12x1 10MHz 2.0~5.5 Flash Only
S3F84P4X(4)
S3F84P4XZ0-DCB4* 8DIP
S3C851BXZ0-QDRB 160QFP 64 1808 42 1/7 BT/WDT/WT/8T/16T UART, SIO 56/34 10x4 3.58MHz 2.7~5.5 S3P851BX
S3C852BXZ0-QXRB 100QFP 64 1808 80 36897 BT/WDT/WT/8T/16T SIO 3.58MHz 2.7~5.5 S3P852BX
S3C863AXZ0-AQB9 42SDIP 32 1040 27 7/3 BT/8TC/8T/12C M/M IIC, Slave IIC 8x4 8x7 12MHz 3.0~5.5 S3P863AX
S3C863AXZ0-QZR9 44QFP
S3C863AXZ0-AQBA 42SDIP 48 S3P863AX
S3C863AXZ0-QZRA 44QFP
S3C8647XZ0-AOB5 32SDIP 16 384 19 6/3 BT/8TC/8T/12C IIC 4x4 8x6 12MHz 4.0~5.5 S3F8647X(4)
S3C8647XZ0-AOB7 24
S3C866BXZ0-AQBB* 42SDIP 64 1040 30 9/2 BT/WDT/8TCx3 IIC 8x8 8x7 24MHz 2.3~3.6V S3F866BX(4)
S3C866BXZ0-QZRB* 44QFP
S3C866BXZ0-PZBB* 44PLCC
S3C880AXZ0-AQBA 42SDIP 48 336 26 5/4 BT/8TCx2 8x4 14x2,8x4(8x1) 8MHz 4.5~5.5 S3F880AX(4)
S3C8849XZ0-AQB7 42SDIP 24 272 26 5/4 BT/WDT/8Tx2 4x4 14x2,8x4(8x1) 8MHz 4.5~5.5 S3P8849X
S3C8849XZ0-AQB9 32
15b
B
Section
SYSTEM LSI
Microcontroller Ordering Information
SAMSUNG SEMICONDUCTOR, INC.
SEPTEMBER 2006 BR-06-ALL-002
MICROCONTROLLER ORDERING INFORMATION
S 3 X X X X X X X X - X X X X X X X
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
1. System LSI (S)
2. Large Classification: Microcontroller(3)
3. Small Classification
C: MASK ROM E: EVA-CHIP
F: FLASH P: OTP
3: MCP
4. Core
1: 51 4-bit 2: 32-bit ARM9
3: 17 16-bit 4: 32 32-bit
5: 32-bit ARM10 6: 56 4-bit
7: 57 4-bit 8: 88 8-bit
9: 86 8-bit A: 15 Other
B: 8-bit CALM RISC MAC
C: 16-bit CALM RISC MAC
D: 32-bit CALM RISC MAC
I: CUSTOM MCU
J: SC-200
K: 8-bit CALM RISC
L: 16-bit CALM RISC
R: 128-bit CALM RISC
S: SC-100
5~6.Application Category
0n: General Purpose 1n:Voice
2n: LCD 3n:Audio
4n: General A/D 5n:Telecom
6n: PC & Peripheral,OA 7n:VFD
8n:Video 9n: Special (IC Card)
An: General Purpose-1 Cn: C
Fn:Telecom-1 Nn: Intel Application
Zn:Assignment Code
* "n": Serial No (1°„Z)
7. Rom Master
0: 0K byte 1: 1K byte
2: 2K byte 3: 12K byte
4: 4K byte 5: 16K byte
6: 6K byte 7: 24K byte
8: 8K byte 9: 32K byte
A: 48K byte B: 64K byte
C: 96K byte D: 128K byte
F: 256K byte G: 384K byte
H: 512K byte J:1M byte
K: 1M byte
8.Version
A~Z
*1st V ersion °˜ X
9~10. Mask Option
11. (--)
12. P ackage T ype
A: SDIP B: LGA
C: CHIP BIZ D: DIP
E: LQFP F:WQFP
G: BGA H: CSP
J: BQFP K: UELP
L: ELP M: QFPH
N: COB P: PLCC
Q: QFP S: SOP
T:TQFP V:TEBGA
W:WAFER Y: FBGA
Z: SBGA
3. Package Pin
Wafer/CHIP BIZ = 0(NONE)
- SDIP
B: 56 M: 24 O: 32
Q: 42 T: 64 V: 30
- LGA
A: 88 C: 83 J: 176
- DIP
C: 8 H: 16 I: 18
K: 20 N: 28 P: 40
- LQFP
C: 144 D: 160 E: 208
G: 256 J: 176 R: 48
T: 64 W: 80 X: 100
- WQFP
T: 64
- BGA
A: 272 B: 416
- CSP
J: 176
- BQFP
B: 132
-UELP
T: 64
- ELP
R: 48 T: 64
- QFPH
D: 160 F: 240
- COB
C: 8 D: 8CNCL
- PLCC
C: 52 Z: 44
- QFP
A: 128 C: 144 D: 160
E: 208 G: 256 R: 48
T: 64 U: 304 W: 80
X: 100 Z: 44
- SOP
C: 8 H: 16 I: 18
K: 20 M: 24 N: 28
O:32
- TQFP
A: 128 T: 64 W: 80
X: 100
- TEBGA
X: 492
- FBGA
A: 337 B: 81 C: 144
D: 160 E: 208 F: 180
G: 285 H: 320 K: 105
L: 400 O: 272 P: 504
Q: 289 T: 64
- SBGA
A: 432
- WAFER
0: None 1: Cust1 2: Cust2
14. Packing
B:Tube
U: Bulk
R:Tray
T:Tape & Reel
S:Tape & Reel Reverse
C: Chip Biz
D: Chip Biz (3 Inch tray)
E: Chip Biz (4 Inch tray)
F: Chip Biz (Reverse)
W:WF Biz Draft Wafer
X:WF Biz Full Cutting
7:Tape & Reel (Pb-Free PKG)
8:Tray (Pb-Free PKG)
9:Tube (Pb-Free PKG)
15. ROM Size
0: 0K byte 1: 1K byte
2: 2K byte 3: 12K byte
4: 4K byte 5: 16K byte
6: 6K byte 7: 24K byte
8: 8K byte 9: 32K byte
A: 48K byte B: 64K byte
C: 96K byte D: 128K byte
E: Extended F: 256K byte
G: 384K byte H: 512K byte
J: 1M byte K: 1M byte
M: Military N: Industrial
X: Special MK3 Y:Special MK2
Z: Special MK1
* Smart Card IC: EEPROM Size
* X,Y,Z: Special Marking ( MASKROM)
16b SAMSUNG SEMICONDUCTOR, INC. SEPTEMBER 2006BR-06-ALL-002
B
Section SYSTEM LSI EEPROMs
SERIAL EEPROMS Write Cycle
Part Number Density (bit) Write Protection Vopr (V) Time (Max) Interface Package
S524A40X20-RCT0 2K by Hardware & Software 1.8 ~ 5.5 5 ms I2C BUS 8TSSOP (T&R)
S524A40X21-DCB0 2K by Hardware 1.8 ~ 5.5 5ms I2C BUS 8DIP
S524A40X21-SCB0 2K by Hardware 1.8 ~ 5.5 5 ms I2C BUS 8SOP
S524A40X21-SCT0 2K by Hardware 1.8 ~ 5.5 5 ms I2C BUS 8SOP (T&R)
S524A40X41-DCB0 4K by Hardware 1.8 ~ 5.5 5 ms I2C BUS 8DIP
S524A40X41-SCB0 4K by Hardware 1.8 ~ 5.5 5 ms I2C BUS 8SOP
S524A40X41-SCT0 4K by Hardware 1.8 ~ 5.5 5 ms I2C BUS 8SOP (T&R)
S524A60X51-DCB0 16K by Hardware 1.8 ~ 5.5 5 ms I2C BUS 8DIP
S524A60X51-SCB0 16K by Hardware 1.8 ~ 5.5 5 ms I2C BUS 8SOP
S524A60X51-SCT0 16K by Hardware 1.8 ~ 5.5 5 ms I2C BUS 8SOP (T&R)
S524A60X81-DCB0 8K by Hardware 1.8 ~ 5.5 5 ms I2C BUS 8DIP
S524A60X81-SCB0 8K by Hardware 1.8 ~ 5.5 5 ms I2C BUS 8SOP
S524A60X81-SCT0 8K by Hardware 1.8 ~ 5.5 5 ms I2C BUS 8SOP (T&R)
S524AB0X91-DCB0 32K by Hardware 1.8 ~ 5.5 5 ms I2C BUS 8DIP
S524AB0X91-SCB0 32K by Hardware 1.8 ~ 5.5 5 ms I2C BUS 8SOP
S524AB0X91-SCT0 32K by Hardware 1.8 ~ 5.5 5 ms I2C BUS 8SOP (T&R)
S524AB0XB1-DCB0 64K by Hardware 1.8 ~ 5.5 5 ms I2C BUS 8DIP
S524AB0XB1-SCB0 64K by Hardware 1.8 ~ 5.5 5 ms I2C BUS 8SOP
S524AB0XB1-SCT0 64K by Hardware 1.8 ~ 5.5 5 ms I2C BUS 8SOP (T&R)
S524AD0XF1-RCT0 256K by Hardware 1.8 ~ 5.5 5 ms I2C BUS 8TSSOP
NOTES: All listed products are in production
Temperature: -25 ~ 70c
All products offer 100-year data retention, a 16M page buffer and two-wired serial I2C-bus interfaces.
All products operate at 100KHz, 400KHz clock frequency.
Package: DCBO=8DIP
BR-06-ALL-003
TFT-LCD
MONITOR/INDUSTRIAL LCD PANELS
15", 17"
19"
20.1", 21.3"
22.0", 23.0", 24.0", 30.0"
LCD TV/A.V.
HD 23", 26", 32", 40", 46"
FULL HD 40", 46”, 52”, 57”
MOBILE PHONES
MAIN DISPLAYS
MAIN + EXTERNAL DISPLAYS
INFORMATION DISPLAYS
40", 46", 57", 82"
DIGITAL IMAGING: ENTERTAINMENT
DSC/DVC/PHOTO PRINTERS/PMP/VOIP/GAMES
MOBILE AV
MINI PCS/CNS/CAR TVS/P-DVDS/
INDUSTRIAL APPLICA TIONS
PAGE
3c
3c
4c
4c
5c
5c
6c
6c
7c
8c
9c
BR-06-ALL-003
TFT-LCDMonitor/Industrial Panels
3c
SAMSUNG SEMICONDUCTOR, INC.
SEPTEMBER 2006
MONITOR/INDUSTRIAL LCD PANELS - 15.0", 17.0”
15.0" XGA, 17.0" SXGA
15.0" XGA 17.0" SXGA
LTM150XO-L01 LTB150XT-A01 LTM170EU-L21/-L31 LTM170EX-L21 /-L31 LTM170E8 -L01
Resolution XGA XGA SXGA SXGA SXGA
Number of Pixels 1,024 x 768 1,024 x 768 1,280 x 1,024 1,280 x 1,024 1,280 x 1,024
Active Area (mm) 304.1 X 228.1 304.1 X 228.1 337.9 x 270.3 337.9 x 270.3 337.9 x 270.3
Pixel Pitch (mm) 0.297 0.297 0.264 0.264 0.264
Mode BTN BTN BTN II / BTN III BTN II / BTN III PVA
Number of Colors 16.2M 16.2M 16.2M / 16.7M 16.2M / 16.7M 6-Bit Hi-FRC =16M
Contrast Ratio (typ.) 700:1 700:1 700:1 / 1:000:1 700:1 / 1:000:1 1,000:1
Brightness (cd/m2)250 450 300 300 280
Response Time (ms at 25°C) 8ms 8ms 8ms / 5ms 8ms / 5ms < 25ms
Color Gamut 60% 60% 72% 72% 72%
Viewing Angle (U/D/L/R) 75/60/75/75 75/60/75/75 75/75/75/60 / 160/160 75/75/75/60 / 160/160 89/89/89/89
Interface 1 Ch. LVDS 1 Ch.LVDS 2 Ch. LVDS 2 Ch. LVDS 2 Ch. LVDS
Supply V oltage (V) 3.3 3.3 5 5 5
Backlight 2 CCFL 2 CCFL 4 CCFL 4 CCFL 4 CCFL
Outline Dimensions (mm) 326.5 x 253.5 x 11.5 326.5 x 253.5 x TBD 358.5 x 296.5 x 17.5 354.9 x 290.3 x 12.8 354.9 x 290.3 x 13.3
Weight (g) 1,050 1,050 2,100 1,650 1,650
Production Now Now Now / August Now / August Now
NOTES: Samsung LCD Product Matrix is based on 2006-2007 availability
MONITOR/INDUSTRIAL LCD PANELS - 19.0"
19.0" SXGA
19.0” SXGA
LTM190EX-L21/-L31 LTM190E4-L02 LTM190E4-L03 LTB190E1-L01 LTB190E2-L01 LTB190E2-L02 LTM190M2-L01
Resolution SXGA SXGA SXGA SXGA SXGA SXGA Wide XGA+
Number of Pixels 1,280 x 1,024 1,280 x 1,024 1,280 x 1,024 1,280 x 1,024 1,280 x 1,024 1,280 x 1,024 1,440 x 900
Active Area (mm) 376.3 X 301.1 376.3 X 301.1 376.3 X 301.1 376.3 X 301.05 376.3 X 301.1 376.3 X 301.1 408.2 x 255.2
Pixel Pitch (mm) 0.294 0.294 0.294 0.294 0.294 0.294 0.284
Mode BTN II / BTN III PVA PVA S-PVA PVA PVA BTN III
Number of Colors 16.7M 16.7M 16.7M 16.7M 16.7M 16.7M 16.7M
Contrast Ratio 700:1 / 1:000:1 1,500:1 1,000:1 1,000:1 1,500:1 1,000:1 1,000:1
Brightness (cd/m2)300 250 300 250 250 700 300
Response T ime (ms at 25°C) 8ms / 5ms < 20ms < 25ms 20ms 25ms 25ms 5ms
Color Gamut 72% 72% 72% 72% 72% 72% 72%
Viewing Angle (U/D/L/R) 75/75/75/60/160/160 89/89/89/89 89/89/89/89 90/90/90/90 89/89/89/89 89/89/89/89 80/80/80/80
Interface 2 Ch.LVDS 2 Ch. LVDS 2 Ch. LVDS 2 Ch. LVDS 2 Ch.LVDS 2 Ch. LVDS 2 Ch. LVDS
Supply Voltage (V) 5555555
Backlight 4 CCFL 4 CCFL 4 CCFL 4 CCFL 4 CCFL 4 CCFL 4 CCFL
Outline Dimensions (mm) 396.0 x 324.0 x 16.5 396.0 x 324.0 x 17.5 396.0 x 324.0 x 20.5 396 x 324 x 16.5 388.6 x 320.5 x 15.2 392.4 x 317.4 x 46.1 428.0 x 278.0 x 18.0
Weight (g) 2,200 2,600 2,700 TBD 2,600 3,000 2,500
Production Now / August Now Now Now Now Now Now
NOTE: Samsung LCD Product Matrix is based on 2006-2007 availability
TFT-LCD Monitor/Industrial Panels
4c SAMSUNG SEMICONDUCTOR, INC. SEPTEMBER 2006
BR-06-ALL-003
MONITOR/INDUSTRIAL LCD PANELS - 20.1", 21.3"
20.1" UXGA, 20.1" WSXGA+
21.3" UXGA, 21.3" QXGA
20.1" UXGA 21.3" UXGA 21.3" QXGA 20.1" WSXGA+
LTM201U1-L01 LTM213U6-L01 LTB213QR-L01 LTM201M1-L01 LTM201M2-L01
Resolution UXGA UXGA QXGA Wide SXGA+ Wide SXGA+
Number of Pixels 1,600 x 1,200 1,600 x 1,200 2,048 x 1,536 1,680 x 1,050 1,680 x 1,050
Active Area (mm) 408.8 x 306.0 432.0 X 324.0 433.2 x 325.9 433.4 x 270.9 433.4 x 270.9
Pixel Pitch (mm) 0.255 0.270 0.212 0.258 0.258
Mode S-PVA S-PVA S-PVA S-PVA BTN III
Number of Colors 16.7M 16.7M Monochrome 10-bit 16.7M 6-Bit Hi-FRC =16.7M
Contrast Ratio 1,000:1 1,000:1 2,000:1 1,000:1 1,000:1
Brightness (cd/m2)300 300 1,500 300 300
Response T ime (ms at 25°C) 8ms 25ms 16ms 16ms (8ms G-G) 5ms
Color Gamut 72% 72% - 72% 72%
Viewing Angle (U/D/L/R) 90/90/90/90 89/89/89/89 90/90/90/90 89/89/89/89 80/80/80/80
Interface 2 Ch. LVDS 2 Ch.LVDS 2 Ch. LVDS 2 Ch. LVDS 2 Ch. LVDS
Supply V oltage (V) 55 5 5 5
Backlight 6 CCFL 6 CCFL 6 CCFL 6 CCFL 6 CCFL
Outline Dimensions (mm) 432.0 x 331.5 x 25.0 462.0 x 361.0 x 22.5 457 x 350 x 42.6 459.4 x 296.4 x 23.3 459.4 x 296.4 x 19.8
Weight (g) 3,250 3,500 2,400 3,100 2,750
Production Now Now Now Now Q306
NOTE: Samsung LCD Product Matrix is based on 2006-2007 availability
MONITOR/INDUSTRIAL LCD PANELS - 22.0", 23.0", 24.0", 30.0"
22.0" WSXGA+, 23.0" WXGA
24.0" WUXGA, 24.0" WUXGA
30.0" WQXGA
22.0" WSXGA+ 23.0" WXGA 24.0" WUXGA 24.0" WUXGA 30.0" WQXGA
LTM220M1-L01 LTB230W1-L01 LTM240M2-L02 LTB240M1-L01 LTB300M1-P01
Resolution Wide SXGA+ WXGA Wide UXGA Wide UXGA Wide QXGA
Number of Pixels 1,680 x 1,050 1,366 x 768 1,920 x 1,200 1,920 x 1,200 2,560 x 1,600
Active Area (mm) 473.8 x 296.1 508.15 x 324.0 518.4 X 324.0 518.4 X 324.0 641.3 x 400.8
Pixel Pitch (mm) 0.282 0.372 0.270 0.270 0.251
Mode BTN III S-PVA S-PVA S-PVA S-PVA
Number of Colors 16.7M 16.7M 16.7M 16.7M 16.7M
Contrast Ratio 1,000:1 1,200:1 1,000:1 1,000:1 1,000:1
Brightness (cd/m2)300 350 500 250 400
Response T ime (ms at 25°C) 5ms 25ms 6ms (Grey to Grey) 8ms (Grey to Grey) 8ms
Color Gamut 72% 72% 72% 104% 72%
Viewing Angle (U/D/L/R) 80/80/80/80 90/90/90/90 89/89/89/89 90/90/90/90 90/90/90/90
Interface 2 Ch. LVDS 2 Ch.LVDS 2 Ch. LVDS 2 Ch.LVDS Dual TMDS
Supply V oltage (V) 55 5 5 12
Backlight 4 CCFL 6 CCFL 6 CCFL, Direct BLU LED Backlight 16 CCFL
Outline Dimensions (mm) 493.7 x 320.1 x 17.0 546.0 x 318.3 x 46.3 546.4 x 352.0 x 35.8 549.1x 368.4 x 33 677.3 x 436.8 x 42.3
Weight (g) 2,800 3,000 3,200 TBD 5,100
Production Q306 Now Now Q107 Now
NOTE: Samsung LCD Product Matrix is based on 2006-2007 availability
TFT-LCDLCD TV/A.V.
5c
SAMSUNG SEMICONDUCTOR, INC.
SEPTEMBER 2006 BR-06-ALL-003
HD LCD TV/A.V. - 23", 26", 32", 40", 46"
23",26",32",40",46"
HD
23" 26" 32" 40" 46"
LTA230W2-L01 LTA260W3-L01 LTA320WT-L16 LTA400WT-L11 LTA400WS-LH1 LTA460WT-L03 LTA460WT-LH1
Resolution WXGA WXGA WXGA WXGA WXGA WXGA WXGA
Number of Pixels 1,366 x 768 1,366 x 768 1,366 x 768 1,366 x 768 1,366 x 768 1,366 x 768 1,366 x 768
Active Area (mm) 508.1 x 285.7 575.8 x 323.7 697.7 x 392.2 885.2 x 497.7 885.2 x 497.7 1,018.1 x 572.5 1,018.1 x 572.5
Pixel Pitch (mm) 0.372 0.422 0.511 0.648 0.648 0.746 0.746
Wide V/A T echnology PVA PVA S-PVA S-PVA S-PVA S-PVA S-PVA
Number of Colors 16.7M 16.7M 16.7M 16.7M 16.7M 16.7M 16.7M
Color Gamut 72 72 72 72 92 72 92
Contrast Ratio 1,200:1 1,200:1 1,200:1 1,200:1 1,200:1 1,200:1 1,200:1
Brightness (cd/m2) 450 450 500 500 500 500 500
Response T ime (ms at 25°C) 8 (G/G) 8 (G/G) 8 (G/G) 8 (G/G) 8 (G/G) 8 (G/G) 8 (G/G)
Interface LVDS (1 ch.) LVDS (1 ch.) LVDS (1 ch.) LVDS (1 ch.) LVDS (1 ch.) LVDS (1 ch.) LVDS (1 ch.)
Outline Dimensions (mm) 546.0 x 318.3 x 47.3 626.0 x 373.0 x 48.0 760.0 x 450.0 x 50.0 952.0 x 551.0 x 50.1 952.0 x 551.0 x 50.1 1,083.0 x 627.0 x 56.5 1,083.0 x 627.0 x 50.0
Weight (kg) 3.0 4.5 7.0 11.5 11.5 15.0 10.0
Production Q306 Q306 Q306 Now Now Q306 Q306
NOTES: Viewing Angle (H/V): PVA-178°/178°,S-PVA-180°/180°
G/G - Gray to gray response time
The specifications represent the main model of each product and are subject to change without prior notice.
FULL-HD LCD TV/A.V. - 40", 46”, 52”, 57”
40", 46”, 52”, 57”
Full-HD
40” 46” 52” 57”
LTA400HS-L01 LTA400HS-LH1 LTA460HS-LH3 LTA520HT-LH1 LTA570HS-L01
Resolution WUXGA WUXGA WUXGA WUXGA WUXGA
Number of Pixels 1,920 x 1,080 1,920 x 1,080 1,920 x 1,080 1,920 x 1,080 1,920 x 1,080
Active Area (mm) 885.6 x 498.2 885.6 x 498.2 1,018.1 x 572.7 1,152.0 x 648.0 1,251.4 x 703.9
Pixel Pitch (mm) 0.461 0.461 0.530 0.600 0.651
Wide V/A Technology S-PVA S-PVA S-PVA S-PVA S-PVA
Number of Colors 16.7M 16.7M 16.7M 1.07B 1.07B
Color Gamut 72 92 92 92 72
Contrast Ratio 1,200:1 1,200:1 1,200:1 1,000:1 1,200:1
Brightness (cd/m2) 500 450 500 500 500
Response T ime (ms at 25°C) 8 (G/G) 8 (G/G) 6 (G/G) 8 (G/G) 8 (G/G)
Interface LVDS (2 ch.) LVDS (2 ch.) LVDS (2 ch.) LVDS (2 ch.) LVDS (2 ch.)
Outline Dimensions (mm) 952.0 x 551.0 x 53.5 952.0 x 551.0 x 47.6 1,083.0 x 627.0 x 50.0 1,236.0 x 719.2 x 57.5 1,328.4 x 765.3 x 63.0
Weight (kg) 12.5 11.5 15.5 23.0 30.0
Production Now Now Q306 Q306 Now
NOTES: Viewing Angle (H/V): PVA-178°/178°,S-PVA-180°/180°
G/G - Gray to gray response time
The specifications represent the main model of each product and are subject to change without prior notice.
TFT-LCD Mobile Phones
MOBILE PHONE: MAIN + EXTERNAL DISPLAYS
Specifications LTD222QV-F0E
Main External
Display Size (inch) 2.22 1.07
Resolution 240xRGBx320 96xRGBx96
Display Mode TMR TMR
Display Colors 65K 65K
Interface 18 bit RGB 8 bit CPU
Brightness (cd//m2)200 110
Contrast Ratio 600:1 600:1
Panel Power 37 8
Consumption (mW)
B/L Power 342 -
Consumption (mW)
Active Area (mm) 33.8x45.1 12.3x19.3
Module Dimensions (mm) 40.5x57.3x5 40.5x57.3x5
Sample Status Now Now
Mass Production Now Now
NOTES: TMR:Transmissive with Micro-Reflectivity MHD: Mobile High Definition
Specifications represent the main model of each product and are subject to change without prior notice.
For More Information: http://www.samsung.com/Products/TFTLCD/common/product_list.aspx?family_cd=LCD03
6c SAMSUNG SEMICONDUCTOR, INC. SEPTEMBER 2006
BR-06-ALL-003
MOBILE PHONE: MAIN DISPLAYS
Specifications LTS166QQ-F0A LTS182QQ-F07 LTS190QC-F0N LTS200QC-F0V LTS220QC-F0H LTS200QV-F0E LTS222QV-F0Y LTP241QV-F02
Display Size (inch) 1.66 1.82 1.9 2 2.2 2 2.22 2.41
Resolution 128xRGBx160 128xRGBx160 176xRGBx220 176xRGBx220 176xRGBx220 240xRGBx320 240xRGBx320 240xRGBx320
Display Mode TMR TMR TMR TMR TMR TMR TMR TMR
Display Colors 65K 65K 65K 65K 262K 65K 262K 262K
Interface CPU CPU CPU CPU CPU CPU CPU MDDI
Brightness (cd/m2)250 160 250 240 180 150 180 300
Contrast Ratio 300:1 150:1 250:1 TBD 200:1 400:1 350:1 400:1
Panel Power 10 10 14 TBD 25 42 22 TBD
Consumption (mW)
B/L Power 150 150 150 TBD wo BLU 256 280 TBD
Consumption (mW)
Active Area (mm) 26.3x32.9 28.9x36.0 30.1x37.6 31.7x39.6 34.8x43.6 30.2x40.3 33.8x45.1 36.7x48.9
Module Dimensions (mm) 32.1x42.4x2.5 34.0x46.7x3.5 35.9x47.8x2.2 38.2x51.3x2.5 39.3x67.3x1.52 35.4x49.8x2.4 39.8x56.9x2.8 42.6x59.3x2.25
(wo BLU)
Sample Status Now Now Now Now Now Now Now Q4 `06
Mass Production Now Now Now Q4 `06 Now Now Q3 `06 Q2 `07
NOTES: TMR:Transmissive with Micro-Reflectivity mWV: Mobile wide-view plus
TSP:Touch-screen panel SLS: Single crystal like silicon
Specifications represent the main model of each product and are subject to change without prior notice
For More Information: http://www.samsung.com/Products/TFTLCD/common/product_list.aspx?family_cd=LCD03
TFT-LCDInformation Displays
7c
SAMSUNG SEMICONDUCTOR, INC.
SEPTEMBER 2006 BR-06-ALL-003
INFORMATION DISPLAY APPLICATIONS - 40", 46", 57", 82"
LTI400WT-L01 LTI460WT-L17 LTI460WT-L13 LTI400HS-L02 LTI460HS-L03 LTI570HH-L01 LTI820HS-L01
40" Narrow Bezel 46" Narrow Bezel 46" 40" Full HD 46" Full HD 57" 82"
Resolution WXGA WXGA WXGA WXGA WXGA WXGA WXGA
Aspect Ratio 16:09 16:09 16:09 16:09 16:09 16:09 16:09
Number of Pixels 1,366 x 768 1,366 x 768 1,366 x 768 1,920 x 1,080 1,920 x 1,080 1,366 x 768 1,366 x 768
Active Area (mm) 885.2 X 497.7 1,018.1 x 572.7 1,018.1 x 572.7 885.2 X 497.7 1018.1 x 572.7 1,251.36 x 703.89 1,805.76 x 1,015.74
Pixel Pitch (mm) 0.648 0.745 0.745 0.648 0.745 0.652 0.941
Mode S-PVA S-PVA S-PVA S-PVA S-PVA S-PVA S-PVA
Number of Colors 16.7 M 16.7 M 16.7 M 16.7 M 16.7 M 16.7 M 16.7 M
Color Gamut 72% 72% 72% 72% 72% 72% 72%
Contrast Ratio (typ.) 1,200:1 1,200:1 1,200:1 1,200:1 1,200:1 1,200:1 1,200:1
Brightness (cd/m2)700 700 700 450 500 600 600
Response T ime (ms at 25°C) 8 ms 8 ms 8 ms 8 ms 8 ms 8 ms 8 ms
Viewing Angle (U/D/L/R) 89/89/89/89 89/89/89/89 89/89/89/89 89/89/89/89 89/89/89/89 89/89/89/89 89/89/89/89
Interface 1 Ch. LVDS 1 Ch. LVDS 1 Ch. LVDS 2 Ch. LVDS 2 Ch. LVDS 2 Ch. LVDS LVDS / TMDS
Power Supply Voltage (V) 5v(Logic), 24v(BLU) 5v(Logic), 24v(BLU) 5v(Logic), 24v(BLU) 12v(Logic), 24v(BLU) 12v(Logic), 24v(BLU) 12v(Logic), 24v(BLU) 12v(Logic), 24v(BLU)
Outline Dimensions (mm) 911.7 x 524.2 x 58.7 1,047.4 x 600.6 x 56.0 1,083 x 627 x 67.8 952.0 x 551.0 x 50.1 1,083 x 627 x 56.5 1,328 x 764 x 63.5 1,875 x 1,080 X 84.1
Weight (g) 12,600 16,500 16,500 TBD TBD TBD TBD
Production Now Now Now October October Oct./Nov. Nov./Dec.
NOTE: All monitors are 16:9 WXGA,high contrast, fast response time,high brightness
TFT-LCD Digital Imaging
8c SAMSUNG SEMICONDUCTOR, INC. SEPTEMBER 2006
BR-06-ALL-003
DIGITAL IMAGING: ENTERTAINMENT
DSC/DVC/Photo Printers/PMP/VoIP/Games/Other
Specifications LTE182QQ-F03 LTE222QV-F01 LTV250QV-F01 LTV250QV-F02 LTV200WQ-F02
Application MP3/DAB/DVB-H MP4/DAB/DVB-H MP5/DAB/DVB-H MP6/DAB/DVB-H DSC
Display Size (inch) 1.82 2.22 2.50 2.50 2.00
Resolution 128xRGBx160 320xRGBx240 320xRGBx240 320xRGBx240 480x240
Display Mode TMR TMR TMR TMR TMR
Display Colors 65K 262K 16.7M 262K 16.7M
Interface CPU CPU 8bit RGB 6bit RGB 8bit RGB
Brightness (cd/m_) 250 190 220 220 190
Contrast Ratio 250:1 400:1 300:1 300:1 250:1
Panel Power Consumption 45 40 40 25
B/L Power Consumption 150 165 200 200 115
Active Area (mm) 26.3x32.9 44.64x33.84 50.88x38.04 50.88x38.04 40.84x30.48
Module Dimensions (mm) 34.9x45.7 55.96x40.04 56.98x47.94 56.98x47.94 47.24x41.08
Sample Status Available Available Available Available Available
Mass Production MP MP MP MP MP
Specifications LTV236WQ-F09 LTV250QV-F0A LTV300QV-F01 LTV300QV-C02 LTV300GV-B01
Application DSC DSC DSC DSC DSC/PMP/VoIP
Display Size (inch) 2.36 2.50 3.00 3.00 3.00
Resolution 480x234 960x240 960x242 960x243 640xRGBx480
Display Mode TMR TMR mSWV+ mSWV+ mSWV+
Display Colors 16.7M 16.7M 16.7M 16.7M 16.7M
Interface CPU CPU 8bit RGB 6bit RGB 8bit RGB
Brightness (cd/m_) 240 250 250 300 TBD
Contrast Ratio 200:1 250:1 400:1 500:1 TBD
Panel Power Consumption 25 (30)
B/L Power Consumption 150 (160) TBD TBD TBD
Active Area (mm) 48.05x35.92 49.95x37.44 60.48x44.76 60.94x49.32 60.48x45.36
Module Dimensions (mm) 55.20x47.50 55.95x47.90 71.98x51.76 69.56x51.52 68.65x45.36
Sample Status Available 2006.12 2006.12 2007.4 2006.12
Mass Production MP 2007.1Q 2007.1Q 2007.2Q 2007.2Q
NOTES: TMR:Transmissive with Micro-Reflectivity mSWV+:mobile Super Wide View (mPVA)
Specifications represent the main model of each product and are subject to change without prior notice.
9c
TFT-LCDMobile A V
SAMSUNG SEMICONDUCTOR, INC.
SEPTEMBER 2006 BR-06-ALL-003
MOBILE AV
Mini PCs/CNS/Car TVs/P-DVDs/Industrial Applications
Specifications LTV350QV-F04 LTV350QV-F0A LTV350QV-F0E LTV350QV-F0F LTV350QV-F0G LTE400WQ-F01 LTE400WQ-F02 LTE400WQ-E01
Display Size (inch) 3.50 3.50 3.50 3.50 3.50 4.00 4.00 4.00
Resolution 320xRGBx240 320xRGBx240 320xRGBx240 320xRGBx240 320xRGBx240 480x272xRGB 480x272xRGB 480x272xRGB
Display Mode TM R TM R T M R T MR T M R TMR TMR Transflective
Display Colors 16.7M 16.7M 16.7M 16.7M 16.7M 16.7M 16.7M 16.7M
Interface 24 bit RGB I/F 24 bit RGB I/F 24 bit RGB I/F 24 bit RGB I/F 24 bit RGB I/F 24 bit RGB I/F 24 bit RGB I/F 24 bit RGB I/F
Brightness (cd/m2) 250 200 320 350 300 250 280 180
Contrast Ratio 300 30 0 300 3 0 0 3 00 40 0 400 18 0
Panel Power 400 400 400 400 400 400 530 530
Consumption
B/L Power 150mW 200mW TBD 200mW 200mW 400mW 390mW 3400mW
Consumption
Light Source LED LED LED LED LED LED LED LED
Storage T emperature - 30~70 -30~70 -30~70 -30~70 -30~70 -30~70 -30~70 -30~70
(°C)
Operation T emperature -20~70 -20~70 -20~70 -20~70 -20~70 -20~60 -20~60 -20~60
(°C)
Active Area (mm) 70.08x52.56 70.08x52.56 70.08x52.56 70.08x52.56 70.08x52.56 87.84x49.78 87.84x49.78 87.84x49.78
Module Dimensions 76.90x63.90x3.15 76.90*63.90x4.25 76.90*63.90x4.25 76.90x63.90x3.15 76.90*63.90x4.25 98.3x62.6x3.8 98.3x62.6x4.85 98.3x62.6x4.85
(mm)
Mass Production No w N ow N o w Now Now No w Now Now
Remarks Now Now Now 3Q '06 3Q '06 Now Now Now
Specifications LTE430WQ-F07 LTE480WQ-F01 LTP500WV-F03 LTE700WQ-F05 LTP700WV-F01 LTP700WV-F02 LTA120W1-T02
Display Size (inch) 4.30 4.80 5.00 7.0 7.0 7.0 12.0
Resolution 480x272xRGB 480x272xRGB 800xRGB*480 480x234xRGB 800x480xRGB 800x480xRGB 800xRGBx480
Display Mode TM R TM R T M R T MR T M R TMR Transmissive
Display Colors 16.7M 16.7M 262K 16.7M 16.7M 16.7M 262K
Interface 24 bit RGB I/F 24 bit RGB I/F 18 bit RGB I/F 24 bit RGB I/F 24 bit RGB I/F 24 bit RGB I/F 6 bit RGB
Brightness (cd/m2) 350 350 170 450 350 350 330
Contrast Ratio 400 40 0 250 5 0 0 4 00 40 0 300
Panel Power 80 110 300 87 TBD TBD 957
Consumption
B/L Power 480 480 888 3.8W TBD TBD 6.84W
Consumption
Light Source LED LED LED CCFL LED CCFL CCFL
Storage T emperature - -30~70 -30~70 -30~70 -20~70 -20 ~ 70 -20 ~ 70 -30~70
(°C)
Operation T emperature --20~60 -20~60 -20~60 -10~60 -10 ~ 60 -10 ~ 60 0~70
(°C)
Active Area (mm) 95.04x53.86 105.84x59.98 109.2x65.52 154.08x86.58 152.4x91.44 152.4x91.44 265.8x149.52
Module Dimensions 105.3x67.2x3.95 114.24x72.88x3.2 122.4x79.0x3.75 166x100x5.7 163.2x104x3.4 165x104x5.4 283.1x171.4x13.0
(mm)
Mass Production No w N ow N o w Now 3Q '06 3Q ' 0 6 No w
Remarks Now 4Q '06 Now Now 4Q '06 4Q '06 4Q '06
NOTES: Specifications represent the main model of each product and are subject to change without prior notice.
For More Information: http://www.samsung.com/Products/TFTLCD
www.usa.samsungsemi.com
Copyright 2006-08-22. Samsung and Samsung Semiconductor, Inc. are registered trademarks of Samsung Electronics, Co., Ltd. All other names and brands may be claimed as the
property of others. The appearance of all products, dates, figures, diagrams and tables are subject to change at any time, without notice.
BR-06-ALL-003 Printed 8/06
