ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VCE = 1700
V
IC = 2400
A
Doc. No. 5SYA1555-03 Oct 06
• Low-loss, rugged SPT chip-set
• Smooth switching SPT chip-set for
good EMC
• Industry standard package
• High power density
• AlSiC base-plate for high power
cycling capability
• AlN substrate for low thermal
resistance
Maximum rated values 1)
Parameter Symbol Conditions min max
Unit
Collector-emitter voltage VCES VGE = 0 V, Tvj ≥ 25 °C 1700
V
DC collector current IC Tc = 80 °C 2400
A
Peak collector current ICM tp = 1 ms, Tc = 80 °C 4800
A
Gate-emitter voltage VGES -20 20 V
Total power dissipation Ptot Tc = 25 °C, per switch (IGBT) 14300
W
DC forward current IF 2400
A
Peak forward current IFRM 4800
A
Surge current IFSM VR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave 20000
A
IGBT short circuit SOA tpsc VCC = 1200 V, VCEM CHIP ≤ 1700 V
VGE ≤ 15 V, Tvj ≤ 125 °C 10 µs
Isolation voltage Visol 1 min, f = 50 Hz 4000
V
Junction temperature Tvj 150 °C
Junction operating temperature Tvj(op) -40 125 °C
Case temperature Tc -40 125 °C
Storage temperature Tstg -40 125 °C
Ms Base-heatsink, M6 screws 4 6
Mt1 Main terminals, M8 screws 8 10
Mounting torques 2) Mt2 Auxiliary terminals, M4 screws 2 3 Nm
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
2) For detailed mounting instructions refer to ABB Document No. 5SYA2039
ABB HiPak
TM
IGBT Module
5SNA 2400E170100
5SNA 2400E170100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1555-03 Oct 06 page 2 of 9
IGBT characteristic values 3)
Parameter Symbol Conditions min typ max
Unit
Collector (-emitter)
breakdown voltage V(BR)CES V
GE = 0 V, IC = 10 mA, Tvj = 25 °C 1700
V
Tvj = 25 °C 2.0 2.3 2.6 V
Collector-emitter 4)
saturation voltage VCE sat IC = 2400 A, VGE = 15 V Tvj = 125 °C 2.3 2.6 2.9 V
Tvj = 25 °C 12 mA
Collector cut-off current ICES VCE = 1700 V, VGE = 0 V Tvj = 125 °C 120 mA
Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C -500
500 nA
Gate-emitter threshold voltage VGE(TO) IC = 240 mA, VCE = VGE, Tvj = 25 °C 4.5 6.5 V
Gate charge Qge IC = 2400 A, VCE = 900 V,
VGE = -15 V .. 15 V 22 µC
Input capacitance Cies 228
Output capacitance Coes 22.1
Reverse transfer capacitance Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C 9.6 nF
Tvj = 25 °C 320
Turn-on delay time td(on) Tvj = 125 °C 320 ns
Tvj = 25 °C 270
Rise time tr
VCC = 900 V,
IC = 2400 A,
RG = 0.56 Ω,
VGE = ±15 V,
Lσ = 60 nH, inductive load Tvj = 125 °C 275 ns
Tvj = 25 °C 1000
Turn-off delay time td(off) Tvj = 125 °C 1090
ns
Tvj = 25 °C 250
Fall time tf
VCC = 900 V,
IC = 2400 A,
RG = 0.56 Ω,
VGE = ±15 V,
Lσ = 60 nH, inductive load Tvj = 125 °C 265 ns
Tvj = 25 °C 495
Turn-on switching energy Eon VCC = 900 V, IC = 2400 A,
VGE = ±15 V, RG = 0.56 Ω,
Lσ = 60 nH, inductive load Tvj = 125 °C 700 mJ
Tvj = 25 °C 850
Turn-off switching energy Eoff VCC = 900 V, IC = 2400 A,
VGE = ±15 V, RG = 0.56 Ω,
Lσ = 60 nH, inductive load Tvj = 125 °C 1000
mJ
Short circuit current ISC tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,
VCC = 1200 V, VCEM CHIP ≤ 1700 V 11100
A
Module stray inductance Lσ CE 10 nH
TC = 25 °C 0.06
Resistance, terminal-chip RCC’+EE’ T
C
= 125 °C 0.085
mΩ
3) Characteristic values according to IEC 60747 – 9
4) Collector-emitter saturation voltage is given at chip level
5SNA 2400E170100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1555-03 Oct 06 page 3 of 9
Diode characteristic values 5)
Parameter Symbol Conditions min typ max
Unit
Tvj = 25 °C 1.65 2.0
Forward voltage 6) VF IF = 2400 A Tvj = 125 °C 1.7 2.0 V
Tvj = 25 °C 1520
Reverse recovery current Irr Tvj = 125 °C 1880
A
Tvj = 25 °C 590
Recovered charge Qrr Tvj = 125 °C 1025
µC
Tvj = 25 °C 580
Reverse recovery time trr Tvj = 125 °C 870 ns
Tvj = 25 °C 420
Reverse recovery energy Erec
VCC = 900 V,
IF = 2400 A,
VGE = ±15 V,
RG = 0.56 Ω
Lσ = 60 nH
inductive load
Tvj = 125 °C 720 mJ
5) Characteristic values according to IEC 60747 – 2
6) Forward voltage is given at chip level
Thermal properties 7)
Parameter Symbol Conditions min typ max
Unit
IGBT thermal resistance
junction to case Rth(j-c)IGBT 0.007
K/W
Diode thermal resistance
junction to case Rth(j-c)DIODE
0.012
K/W
IGBT thermal resistance 2)
case to heatsink Rth(c-s)IGBT
IGBT per switch, λ grease = 1W/m x K 0.009
K/W
Diode thermal resistance 7)
case to heatsink Rth(c-s)DIODE
Diode per switch, λ grease = 1W/m x K 0.018
K/W
2) For detailed mounting instructions refer to ABB Document No. 5SYA2039
Mechanical properties 7)
Parameter Symbol Conditions min typ max
Unit
Dimensions L x W x H
Typical , see outline drawing 190 x 140 x 38 mm
Term. to base:
23
Clearance distance in air da according to IEC 60664-1
and EN 50124-1 Term. to term:
19 mm
Term. to base:
33
Surface creepage distance ds according to IEC 60664-1
and EN 50124-1 Term. to term:
32 mm
Mass m 1500
g
7) Thermal and mechanical properties according to IEC 60747 – 15
5SNA 2400E170100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1555-03 Oct 06 page 4 of 9
Electrical configuration
Outline drawing 2)
Note: all dimensions are shown in mm
2) For detailed mounting instructions refer to ABB Document No. 5SYA2039
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.
This product has been designed and qualified for Industrial Level.
5SNA 2400E170100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1555-03 Oct 06 page 5 of 9
0
400
800
1200
1600
2000
2400
2800
3200
3600
4000
4400
4800
0 1 2 3 4 5
VCE [V]
IC [A]
VGE = 15 V
125 °C
25 °C
0
400
800
1200
1600
2000
2400
2800
3200
3600
4000
4400
4800
012345678910111213
VGE [V]
IC [A]
125 °C
25 °C
VCE = 25 V
Fig. 1 Typical on-state characteristics, chip level Fig. 2 Typical transfer characteristics, chip level
0
400
800
1200
1600
2000
2400
2800
3200
3600
4000
4400
4800
0123456
VCE [V]
IC [A]
9V
11V
13V
15V
17V
Tvj = 25 °C
0
400
800
1200
1600
2000
2400
2800
3200
3600
4000
4400
4800
0123456
VCE [V]
IC [A]
Tvj = 125 °C
11V
9V
13V
17V
15V
Fig. 3 Typical output characteristics, chip level Fig. 4 Typical output characteristics, chip level
5SNA 2400E170100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1555-03 Oct 06 page 6 of 9
0.0
0.5
1.0
1.5
2.0
2.5
3.0
01000 2000 3000 4000 5000
IC [A]
Eon, Eoff [J]
V
CC = 900 V
RG = 0.56 ohm
V
GE = ±15 V
Tvj = 125 °C
Lσ = 60 nH
Eoff Eon
Esw[mJ] = 1.38 x 10-4 x IC2 + 0.28 x IC + 233
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 1 2 3 4
RG [ohm]
Eon, Eoff [J]
V
CC = 900 V
I
C = 2400 A
V
GE = ±15 V
T
vj = 125 °C
L
σ = 60 nH
Eon
Eoff
Fig. 5 Typical switching energies per pulse
vs collector current Fig. 6 Typical switching energies per pulse
vs gate resistor
0.1
1
10
0 1000 2000 3000 4000 5000
IC [A]
td(on), tr, td(off), tf [µs]
V
CC = 900 V
RG = 0.56 ohm
V
GE = ±15 V
Tvj = 125 °C
Lσ = 60 nH
td(on)
td(off)
tf
tr
0.1
1
10
0 1 2 3 4 5
RG [ohm]
td(on), tr, td(off), tf [µs]
V
CC = 900 V
IC = 2400 A
V
GE = ±15 V
Tvj = 125 °C
Lσ = 60 nH
td(on)
td(off)
tf
tr
Fig. 7 Typical switching times
vs collector current Fig. 8 Typical switching times
vs gate resistor
5SNA 2400E170100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1555-03 Oct 06 page 7 of 9
1
10
100
1000
0 5 10 15 20 25 30 35
VCE [V]
C [nF]
VGE = 0 V
fOSC = 1 MHz
VOSC = 50 mV
Cies
Coes
Cres
0
5
10
15
20
0 2 4 6 8 10 12 14 16 18 20
Qg [µC]
VGE [V]
V
CC
= 900 V
V
CC = 1300 V
IC = 2400 A
Tvj = 25 °C
Fig. 9 Typical capacitances
vs collector-emitter voltage Fig. 10 Typical gate charge characteristics
0
0.5
1
1.5
2
2.5
0500 1000 1500 2000
VCE [V]
ICpulse / IC
Chip
Module
V
CC ≤ 1200 V, Tvj = 125 °C
V
GE = ±15 V, RG = 0.56 ohm
Fig. 11 Turn-off safe operating area (RBSOA)
5SNA 2400E170100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1555-03 Oct 06 page 8 of 9
0
100
200
300
400
500
600
700
800
900
1000
0 1000 2000 3000 4000 5000
IF [A]
Erec [mJ]
0
500
1000
1500
2000
2500
Irr [A], Qrr [µC]
V
CC = 900 V
RG = 0.56 ohm
Tvj = 125 °C
Lσ = 60 nH
Qrr
Irr
Erec
Erec [mJ] = -4.53 x 10-5 x IF2 + 0.382 x IF + 76
0
200
400
600
800
1000
1200
2 3 4 5 6 7 8 9 10 11
di/dt [kA/µs]
Erec [ mJ], Qrr [µC]
0
400
800
1200
1600
2000
2400
Irr [A]
R
G
= 0.56 ohm
R
G
= 0.82 ohm
R
G
= 1.0 ohm
R
G
= 2.2 ohm
R
G
= 3.9 ohm
R
G
= 1.5 ohm
V
CC = 900 V
IF = 2400 A
Tvj = 125 °C
Lσ = 60 nH
Erec
Irr
Qrr
Fig. 12 Typical reverse recovery characteristics
vs forward current Fig. 13 Typical reverse recovery characteristics
vs di/dt
0
400
800
1200
1600
2000
2400
2800
3200
3600
4000
4400
4800
00.5 1 1.5 2 2.5
VF [V]
IF [A]
125°C
25°C
0
400
800
1200
1600
2000
2400
2800
3200
3600
4000
4400
4800
5200
0500 1000 1500 2000
VR [V]
IR [A]
V
CC ≤ 1200 V
di/dt ≤ 12 kA/µs
Tvj = 125 °C
Fig. 14 Typical diode forward characteristics,
chip level Fig. 15 Safe operating area diode (SOA)
5SNA 2400E170100
ABB Switzerland Ltd, Semiconductors reserves the rig
ht to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA1555-03 Oct 06
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z n
1i
t/-
ic)-(jth ∑
=
i
τ
i 1 2 3 4
Ri(K/kW) 5.059 1.201 0.495 0.246
IGBT
τi(ms) 202.9 20.3 2.01 0.52
Ri(K/kW) 8.432 1.928 0.866 0.839
DIODE
τi(ms) 210 29.6 7.01 1.49
0.0001
0.001
0.01
0.1
0.001 0.01 0.1 1 10
t [s]
Zth(j-c) [K/W] IGBT, DIODE
Zth(j-c) IGBT
Zth(j-c) Diode
Fig. 16 Thermal impedance vs time
For detailed information refer to:
• 5SYA 2042-02 Failure rates of HiPak modules due to cosmic rays
• 5SYA 2043-01 Load – cycle capability of HiPaks
• 5SZK 9120-00 Specification of environmental class for HiPak (available upon request)
