Si2301BDS New Product Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.100 @ VGS = -4.5 V -2.4 0.150 @ VGS = -2.5 V -2.0 VDS (V) -20 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301 BDS (L1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Drain-Source Voltage VDS -20 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C) _ b TA= 25_C TA= 70_C Pulsed Drain Currenta IS TA= 25_C Power Dissipationb TA= 70_C Operating Junction and Storage Temperature Range PD -2.2 -1.9 IDM Continuous Source Current (Diode Conduction)b V - 2.4 ID -1.8 A -10 -0.72 -0.6 0.9 0.7 0.57 0.45 TJ, Tstg Unit W _C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc RthJA Typical Maximum 120 145 140 175 Unit _ _C/W Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 5 sec. c. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72066 S-22048--Rev. A, 18-Nov-02 www.vishay.com 1 Si2301BDS New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min V(BR)DSS VGS = 0 V, ID = -250 mA -20 VGS(th) VDS = VGS, ID = -250 mA -0.45 Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Typ Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage -0.95 "100 VDS = -16 V, VGS = 0 V -1 VDS = -16 V, VGS = 0 V, TJ = 55_C -10 VDS v -5 V, VGS = -4.5 V -6 VDS v -5 V, VGS = -2.5 V -3 nA m mA A VGS = -4.5 V, ID = -2.8 A 0.080 0.100 VGS = -2.5 V, ID = -2.0 A 0.110 0.150 gfs VDS = -5 V, ID = -2.8 A 6.5 VSD IS = -0.75 A, VGS = 0 V -0.80 -1.2 4.5 10 rDS(on) V W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs VDS = -6 V, VGS = -4.5 V ID ^ -2.8 A 0.7 Gate-Drain Charge Qgd 1.1 Input Capacitance Ciss 375 Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = -6 V, VGS = 0, f = 1 MHz nC 95 pF 65 Switchingc td(on) Turn-On Time Turn-Off Time tr td(off) VDD = -6 V, RL = 6 W ID ^ -1.0 A, VGEN = -4.5 V RG = 6 W tf 20 30 40 60 30 45 20 30 ns Notes a. Pulse test: PW v300 ms duty cycle v2%. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. S FaxBack 408-970-5600 www.vishay.com 2 Document Number: 72066 S-22048--Rev. A, 18-Nov-02 Si2301BDS New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 VGS = 5 thru 2.5 V TC = -55_C 8 I D - Drain Current (A) I D - Drain Current (A) 8 Transfer Characteristics 10 2V 6 4 1.5 V 2 25_C 125_C 6 4 2 1V 0 0 1 2 3 4 0 0.0 5 0.5 VDS - Drain-to-Source Voltage (V) 1.0 On-Resistance vs. Drain Current 2.5 3.0 800 0.4 C - Capacitance (pF) r DS(on)- On-Resistance ( W ) 2.0 Capacitance 0.5 0.3 0.2 VGS = 2.5 V 600 Ciss 400 200 Coss 0.1 VGS = 4.5 V Crss 0.0 0 0 2 4 6 8 0 10 4 Gate Charge 5 8 12 16 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) 1.6 VDS = 10 V ID = 2.8 A On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 2.8 A 4 1.4 r DS(on)- On-Resistance ( W ) (Normalized) V GS - Gate-to-Source Voltage (V) 1.5 VGS - Gate-to-Source Voltage (V) 3 2 1 0 0 1 2 3 Qg - Total Gate Charge (nC) Document Number: 72066 S-22048--Rev. A, 18-Nov-02 4 5 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 Si2301BDS New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10 0.6 r DS(on)- On-Resistance ( W ) I S - Source Current (A) 0.5 TJ = 150_C 1 TJ = 25_C 0.4 ID = 2.8 A 0.3 0.2 0.1 0.0 0.1 0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 0.4 10 0.3 0.2 6 Power (W) V GS(th) Variance (V) 8 ID = 250 mA 0.1 4 0.0 TA = 25_C 2 -0.1 -0.2 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 TJ - Temperature (_C) 1 10 100 1000 Time (sec) Safe Operating Area 100 10 ms 100 ms I D - Drain Current (A) 10 1 ms 1 10 ms TA = 25_C Single Pulse 100 ms 0.1 dc, 100 s, 10 s, 1 s 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 72066 S-22048--Rev. A, 18-Nov-02 Si2301BDS New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 10 100 600 Square Wave Pulse Duration (sec) Document Number: 72066 S-22048--Rev. A, 18-Nov-02 www.vishay.com 5