To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS5KM-10A FS5KM-10A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS5KM-10A OUTLINE DRAWING Dimensions in mm 3 0.3 6.5 0.3 2.8 0.2 3.2 0.2 3.6 0.3 14 0.5 15 0.3 10 0.3 1.1 0.2 1.1 0.2 0.75 0.15 2.6 0.2 10V DRIVE VDSS ............................................................................... 500V rDS (ON) (MAX) ................................................................ 1.5 ID ........................................................................................... 5A 0.75 0.15 2.54 0.25 4.5 0.2 2.54 0.25 GATE DRAIN SOURCE TO-220FN APPLICATION SMPS, AC-adapter, Power supply of Printer, Copier, TV, VCR. etc. MAXIMUM RATINGS Symbol (Tc = 25C) Parameter Conditions VDSS VGSS Drain-source voltage Gate-source voltage ID IDM Drain current Drain current (Pulsed) IDA PD Avalanche current (Pulsed) Maximum power dissipation Tch Tstg Channel temperature Storage temperature Viso Isolation voltage AC for 1minute, Terminal to case Weight Typical value -- VGS = 0V VDS = 0V L = 200H Ratings Unit 500 30 V V 5 15 A A 5 30 A W -55 ~ +150 -55 ~ +150 C C 2000 V 2.0 g Sep. 2001 MITSUBISHI Nch POWER MOSFET FS5KM-10A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25C) Symbol Parameter V (BR) DSS V (BR) GSS Drain-source breakdown voltage Gate-source breakdown voltage I GSS I DSS Gate-source leakage current Drain-source leakage current VGS (th) Gate-source threshold voltage rDS (ON) VDS (ON) Drain-source on-state resistance Drain-source on-state voltage y fs Ciss Forward transfer admittance Input capacitance Coss Crss Output capacitance Reverse transfer capacitance t d (on) tr Turn-on delay time Rise time t d (off) Turn-off delay time tf VSD Fall time Source-drain voltage Rth (ch-c) Thermal resistance Limits Test conditions ID = 1mA, VGS = 0V IGS = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 500V, VGS = 0V ID = 1mA, VDS = 10V ID = 2A, VGS = 10V ID = 2A, VGS = 10V ID = 2A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz VDD = 200V, ID = 2A, VGS = 10V, R GEN = RGS = 50 IS = 2A, VGS = 0V Channel to case Unit Min. Typ. Max. 500 30 -- -- -- -- V V -- -- -- -- 10 1.0 A mA 2.5 3.0 3.5 V -- -- 1.2 2.4 1.5 3.0 V 2.7 -- 4.5 700 -- -- S pF -- -- 70 15 -- -- pF pF -- -- 15 20 -- -- ns ns -- 90 -- ns -- -- 30 1.5 -- 2.0 ns V -- -- 4.17 C/W PERFORMANCE CURVES DRAIN CURRENT ID (A) 40 30 20 10 0 0 50 100 150 101 3 2 100s 100 1ms 7 5 10 ms 3 2 TC = 25C Single Pulse 100 ms 10-1 7 5 3 2 200 tw = 10s 7 5 DC 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 5 VGS = 20V,10V,8V,6V 8 TC = 25C Pulse Test 6 5V 4 PD = 30W 2 VGS = 20V,10V,6V 5V 4 3 PD = 30W 2 TC = 25C Pulse Test 1 4V 0 0 5 7 CASE TEMPERATURE TC (C) 10 DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 3 2 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 50 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) 0 4V 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE VDS (V) Sep. 2001 MITSUBISHI Nch POWER MOSFET FS5KM-10A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 4.0 TC = 25C Pulse Test 16 12 ID = 8A 8 5A 4 3A 0 0 4 8 12 16 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 20 TC = 25C Pulse Test 3.2 2.4 VGS = 10V 1.6 VGS = 20V 0.8 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) 102 10 6 4 2 0 CAPACITANCE Ciss, Coss, Crss (pF) FORWARD TRANSFER ADMITTANCE yfs (S) 8 TC = 25C VDS = 10V Pulse Test 0 4 8 12 16 3 2 101 7 5 3 2 100 7 5 20 2 3 5 7 100 2 3 5 7 101 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 2 5 3 Ciss 3 2 102 7 5 3 2 3 VDS = 10V Pulse Test 10-1 -1 10 103 7 5 101 7 5 TC = 25C,75C,125C 3 2 Coss Tch = 25C VGS = 0V f = 1MHz Crss 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) DRAIN CURRENT ID (A) 7 5 Tch = 25C VGS = 10V VDD = 200V RGEN = RGS = 50 2 102 td(off) 7 5 tf 3 tr td(on) 2 101 7 5 10-1 2 3 5 7 100 2 3 5 7 101 DRAIN CURRENT ID (A) Sep. 2001 MITSUBISHI Nch POWER MOSFET FS5KM-10A HIGH-SPEED SWITCHING USE VGS = 0V Pulse Test SOURCE CURRENT IS (A) VDS = 100V 200V 400V 16 12 8 4 TCh = 25C ID = 5A 0 8 16 24 32 6 75C 4 125C 2 1.6 0.8 2.4 3.2 4.0 ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 3 2 100 7 5 3 2 -50 0 50 100 3.0 2.0 1.0 0 150 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) VDS = 10V ID = 1mA 4.0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) 0.4 0 SOURCE-DRAIN VOLTAGE VSD (V) VGS = 10V 7 ID = 2A 5 Pulse Test 1.4 TC = 25C GATE CHARGE Qg (nC) 101 10-1 8 0 40 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) 10 20 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) TRANSIENT THERMAL IMPEDANCE Zth (ch -c) (C/ W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 7 5 D = 1.0 = 0.5 = 0.2 = 0.1 3 2 = 0.05 10-1 = 0.02 7 5 3 2 Single Pulse PDM tw = 0.01 T D= tw T 10-2 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Sep. 2001