Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
MITSUBISHI Nch POWER MOSFET
FS5KM-10A
HIGH-SPEED SWITCHING USE
Sep. 2001
MITSUBISHI Nch POWER MOSFET
FS5KM-10A
HIGH-SPEED SWITCHING USE
500
±30
5
15
5
30
–55 ~ +150
–55 ~ +150
2000
2.0
VGS = 0V
VDS = 0V
L = 200µH
AC for 1minute, Terminal to case
Typical value
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
V
V
A
A
A
W
°C
°C
V
g
VDSS
VGSS
ID
IDM
IDA
PD
Tch
Tstg
Viso
—
Symbol
MAXIMUM RATINGS (Tc = 25°C)
Parameter Conditions Ratings Unit
FS5KM-10A OUTLINE DRAWING Dimensions in mm
APPLICATION
SMPS, AC-adapter, Power supply of Printer, Copier, TV, VCR. etc.
TO-220FN
●10V DRIVE
●VDSS ............................................................................... 500V
●rDS (ON) (MAX) ................................................................ 1.5Ω
●ID ........................................................................................... 5A
15 ± 0.314 ± 0.5
10 ± 0.3 2.8 ± 0.2
φ 3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.252.54 ± 0.25
2.6 ± 0.2
4.5 ± 0.2
0.75 ± 0.15
3 ± 0.33.6 ± 0.3
6.5 ± 0.3
➀➁➂
➁
➀
➂
➀
GATE
➁
DRAIN
➂
SOURCE
MITSUBISHI Nch POWER MOSFET
FS5KM-10A
HIGH-SPEED SWITCHING USE
Sep. 2001
—
—
—
—
3.0
1.2
2.4
4.5
700
70
15
15
20
90
30
1.5
—
ID = 1mA, VGS = 0V
IGS = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 500V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 2A, VGS = 10V
ID = 2A, VGS = 10V
ID = 2A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 2A, VGS = 10V, RGEN = RGS = 50Ω
IS = 2A, VGS = 0V
Channel to case
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
500
±30
—
—
2.5
—
—
2.7
—
—
—
—
—
—
—
—
—
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
V
(BR) DSS
V
(BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
V
V
µA
mA
V
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
—
—
±10
1.0
3.5
1.5
3.0
—
—
—
—
—
—
—
—
2.0
4.17
Symbol UnitParameter Test conditions Limits
Min. Typ. Max.
PERFORMANCE CURVES
0
10
20
30
40
50
0 20050 100 150
10
–1
7
10
0
5
7
2
3
10
1
5
7
2
3
2
3
10
1
3572
10
2
357 72352
5
2
3
0
1
2
3
4
5
0246810
T
C
= 25°C
Single Pulse
100µs
tw =
10µs
1ms
DC
100
ms
10
ms
P
D
= 30W
V
GS
= 20V,10V,6V
T
C
= 25°C
Pulse Test
5V
4V
0
2
4
6
8
10
0 4 8 121620
V
GS
= 20V,10V,8V,6V
P
D
= 30W
T
C
= 25°C
Pulse Test
4V
5V
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE TC (°C)
POWER DISSIPATION PD (W)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT ID (A)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
MITSUBISHI Nch POWER MOSFET
FS5KM-10A
HIGH-SPEED SWITCHING USE
Sep. 2001
0
2
4
6
8
10
048121620
0
4
8
12
16
20
048121620 0
0.8
1.6
2.4
3.2
4.0
10
–1
2
10
0
357 2
10
1
357 2
10
2
357
10–1
10
1
10
0
23 57 23 57
10
1
5
7
10
2
2
3
5
7
2
3
5
10
0
357
10
1
32257
10
2
323257
10
1
3
5
7
10
2
2
2
3
5
7
10
3
2
3
5
7
10
–1
10
1
10
0
23 57 23 57
10
–1
10
0
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
V
DS
= 10V
Pulse Test
T
C
= 25°C
Pulse Test
T
C
= 25°C
V
DS
= 10V
Pulse Test
Tch = 25°C
V
GS
= 10V
V
DD
= 200V
R
GEN
= R
GS
= 50
Ω
t
d(off)
t
d(on)
t
f
t
r
Ciss
Coss
Crss
Tch = 25°C
V
GS
= 0V
f = 1MHz
T
C
= 25°C
Pulse Test
T
C
= 25°C,75°C,125°C
V
GS
= 10V
V
GS
= 20V
I
D
= 8A
5A
3A
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE y
fs
(S)
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
CAPACITANCE
Ciss, Coss, Crss (pF)
SWITCHING TIME (ns)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(Ω)
MITSUBISHI Nch POWER MOSFET
FS5KM-10A
HIGH-SPEED SWITCHING USE
Sep. 2001
0.4
0.6
0.8
1.0
1.2
1.4
–50 0 50 100 150
VGS = 0V
ID = 1mA
0
1.0
2.0
3.0
4.0
5.0
–50 0 50 100 150
VDS = 10V
ID = 1mA
0
2
4
6
8
10
00.8 1.6 2.4 3.2 4.0
10
–1
10
0
2
3
5
7
10
1
2
3
5
7
–50 0 50 100 150
VGS = 10V
ID = 2A
Pulse Test
0
4
8
12
16
20
0 8 16 24 32 40
10
–2
10
–1
2
3
5
7
10
0
2
3
5
7
10
1
2
3
5
7
10
–4
23 57 23 57 23 57 23 57
10
0
23 57
10
1
23 57
10
2
10
–3
10
–2
10
–1
VDS = 100V 400V200V
TCh = 25°C
ID = 5A
VGS = 0V
Pulse Test
TC = 25°C
75°C
125°C
PDM
tw
D
=
T
tw
T
D = 1.0
= 0.5
= 0.2
= 0.1
Single Pulse
= 0.05
= 0.02
= 0.01
GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g (nC)
GATE-SOURCE VOLTAGE VGS (V)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE VSD (V)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
GATE-SOURCE THRESHOLD
VOLTAGE VGS (th) (V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
PULSE WIDTH tw (s)
TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/ W)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25°C)
SOURCE CURRENT IS (A)
