FFPF10F150S FFPF10F150S Features * High voltage and high reliability * High speed switching * Low forward voltage TO-220F Applications 1 * Suitable for damper diode in horizontal deflection circuits 2 1. Cathode 2. Anode DAMPER DIODE Absolute Maximum Ratings Symbol TC=25C unless otherwise noted VRRM Parameter Peak Repetitive Reverse Voltage Value 1500 Units V IF(AV) Average Rectified Forward Current 10 A IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave @ TC = 125C 100 A TJ, TSTG Operating Junction and Storage Temperature - 65 to +150 C Value 3.0 Units C/W Thermal Characteristics Symbol RJC Parameter Maximum Thermal Resistance, Junction to Case Electrical Characteristics Symbol V FM * IRM * TC=25 C unless otherwise noted Parameter Maximum Instantaneous Forward Voltage I F = 10A I F = 10A Maximum Instantaneous Reverse Current @ rated VR Min. Typ. Max. TC = 25 C TC = 125 C - - 1.6 1.4 TC = 25 C TC = 125 C - - 10 80 Units V A trr Maximum Reverse Recovery Time (IF =1A, di/dt = 50A/s) - - 170 ns tfr Maximum Forward Recovery Time (IF =6.5A, di/dt = 50A/s) - - 250 ns - - 14 V Maximum Forward Recovery VFRM * Pulse Test: Pulse Width=300s, Duty Cycle=2% (c)2000 Fairchild Semiconductor International Voltage Rev. F, September 2000 FFPF10F150S Typical Characteristics 100 [ A] 10 o TJ = 125 C R 10 Reverse Current , I Forward Current , I F [A] 100 o TJ = 125 C 1 o TJ = 25 C 1 o TJ = 100 C 0.1 o TJ = 25 C 0.01 0.001 0.1 0.0 0.4 0.8 1.2 1.6 0 2.0 300 1200 1500 400 200 [ns] Typical Capacitance at 0V = 150 pF 180 Reverse Recovery Time , t rr 160 Capacitance , Cj [pF] 900 Figure 2. Typical Reverse Current vs. Reverse Voltage Figure 1. Typical Forward Voltage Drop vs. Forward Current 140 120 100 80 60 40 20 300 di/dt = 50A/s 200 di/dt = 100A/s 100 0 0 0.1 1 10 1 100 2 3 4 5 6 7 8 9 10 Forward Current , IF [A] Reverse Voltage , VR [V] Figure 4. Typical Reverse Recovery Time vs. Forward Current Figure 3. Typical Junction Capacitance 15 F(AV) [nC] [A] 2000 Average Forward Current , I rr di/dt = 100A/s 1500 1000 di/dt = 50A/s 500 0 1 2 3 4 5 6 7 8 Forward Current , IF [A] Figure 5. Typical Stored Charge vs. Forward Current (c)2000 Fairchild Semiconductor International 9 10 10 C D Stored Recovery Charge , Q 600 Reverse Voltage , VR [V] Forward Voltage , VF [V] 5 0 80 100 120 140 160 o Case Temperature , TC [ C] Figure 6. Forward Current Derating Curve Rev. F, September 2000 FFPF10F150S Package Dimensions TO-220F 2L o3.18 0.10 2.54 0.20 3.30 0.10 10.16 0.20 MAX1.47 15.87 0.20 (1.80) (6.50) (1.00x45) 12.00 0.20 9.75 0.30 15.80 0.20 6.68 0.20 (0.70) 2.76 0.20 0.80 0.10 0.35 0.10 2.54TYP [2.54 0.20] 9.40 0.20 +0.10 0.50 -0.05 4.70 0.20 2.54TYP [2.54 0.20] Dimensions in Millimeters (c)2000 Fairchild Semiconductor International Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. F1