1. Product profile
1.1 General description
NPN/NPN matched double transistors in small Surface-Mounted Device (SMD) plastic
packages. The transistors in the SOT666 and SOT363 (SC-88) packages are fully isolated
internally.
1.2 Features
nCurrent gain matching
nBase-emitter voltage matching
nCommon emitter configuration for SOT353 types
nApplication-optimized pinout
1.3 Applications
nCurrent mirror
nDifferential amplifier
1.4 Quick reference data
PMP4201V; PMP4201G;
PMP4201Y
NPN/NPN matched double transistors
Rev. 03 — 15 September 2006 Product data sheet
Table 1. Product overview
Type number Package NPN/NPN hFE1/hFE2
0.95 complement PNP/PNP
complement
Philips JEITA
PMP4201V SOT666 - PMP4501V PMP5201V
PMP4201G SOT353 SC-88A PMP4501G PMP5201G
PMP4201Y SOT363 SC-88 PMP4501Y PMP5201Y
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
VCEO collector-emitter voltage open base - - 45 V
ICcollector current - - 100 mA
hFE DC current gain VCE =5V;
IC=2mA 200 290 450
PMP4201V_G_Y_3 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 03 — 15 September 2006 2 of 14
Philips Semiconductors PMP4201V; PMP4201G; PMP4201Y
NPN/NPN matched double transistors
[1] The smaller of the two values is taken as the numerator.
[2] The smaller of the two values is subtracted from the larger value.
2. Pinning information
3. Ordering information
Per device
hFE1/hFE2 hFE matching VCE =5V;
IC=2mA [1] 0.98 1 -
VBE1VBE2 VBE matching VCE =5V;
IC=2mA [2] --2mV
Table 2. Quick reference data
…continued
Symbol Parameter Conditions Min Typ Max Unit
Table 3. Pinning
Pin Description Simplified outline Symbol
SOT666; SOT363
1 base TR1
2 base TR2
3 collector TR2
4 emitter TR2
5 emitter TR1
6 collector TR1
SOT353
1 base TR1
2 emitter TR1, TR2
3 base TR2
4 collector TR2
5 collector TR1
001aab555
6 45
1 32
006aaa548
321
456
TR1
TR2
132
45
006aaa549
54
123
TR1 TR2
Table 4. Ordering information
Type number Package
Name Description Version
PMP4201V - plastic surface-mounted package; 6 leads SOT666
PMP4201G SC-88A plastic surface-mounted package; 5 leads SOT353
PMP4201Y SC-88 plastic surface-mounted package; 6 leads SOT363
PMP4201V_G_Y_3 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 03 — 15 September 2006 3 of 14
Philips Semiconductors PMP4201V; PMP4201G; PMP4201Y
NPN/NPN matched double transistors
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
Table 5. Marking codes
Type number Marking code[1]
PMP4201V EA
PMP4201G R7*
PMP4201Y S7*
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 45 V
VEBO emitter-base voltage open collector - 6 V
ICcollector current - 100 mA
ICM peak collector current single pulse;
tp1ms - 200 mA
Ptot total power dissipation Tamb 25 °C
SOT666 [1][2] - 200 mW
SOT353 [1] - 200 mW
SOT363 [1] - 200 mW
Per device
Ptot total power dissipation Tamb 25 °C
SOT666 [1][2] - 300 mW
SOT353 [1] - 300 mW
SOT363 [1] - 300 mW
Tjjunction temperature - 150 °C
Tamb ambient temperature 65 +150 °C
Tstg storage temperature 65 +150 °C
PMP4201V_G_Y_3 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 03 — 15 September 2006 4 of 14
Philips Semiconductors PMP4201V; PMP4201G; PMP4201Y
NPN/NPN matched double transistors
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
7. Characteristics
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
Rth(j-a) thermal resistance from
junction to ambient in free air
SOT666 [1][2] - - 625 K/W
SOT353 [1] - - 625 K/W
SOT363 [1] - - 625 K/W
Per device
Rth(j-a) thermal resistance from
junction to ambient in free air
SOT666 [1][2] - - 416 K/W
SOT353 [1] - - 416 K/W
SOT363 [1] - - 416 K/W
Table 8. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
ICBO collector-base cut-off
current VCB =30V;
IE=0A - - 15 nA
VCB =30V;
IE=0A;
Tj= 150 °C
--5µA
IEBO emitter-base cut-off
current VEB =5V;
IC=0A - - 100 nA
hFE DC current gain VCE =5V;
IC=10µA- 250 -
VCE =5V;
IC=2mA 200 290 450
VCEsat collector-emitter
saturation voltage IC= 10 mA;
IB= 0.5 mA - 50 200 mV
IC= 100 mA;
IB=5mA - 200 400 mV
VBEsat base-emittersaturation
voltage IC= 10 mA;
IB= 0.5 mA [1] - 760 - mV
IC= 100 mA;
IB=5mA [1] - 910 - mV
PMP4201V_G_Y_3 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 03 — 15 September 2006 5 of 14
Philips Semiconductors PMP4201V; PMP4201G; PMP4201Y
NPN/NPN matched double transistors
[1] VBEsat decreases by about 1.7 mV/K with increasing temperature.
[2] VBE decreases by about 2 mV/K with increasing temperature.
[3] The smaller of the two values is taken as the numerator.
[4] The smaller of the two values is subtracted from the larger value.
VBE base-emitter voltage VCE =5V;
IC=2mA [2] 610 660 710 mV
VCE =5V;
IC=10mA [2] - - 770 mV
Cccollector capacitance VCB =10V;
IE=i
e=0A;
f=1MHz
- - 1.5 pF
Ceemitter capacitance VEB = 0.5 V;
IC=i
c=0A;
f=1MHz
-11-pF
fTtransition frequency VCE =5V;
IC= 10 mA;
f = 100 MHz
100 250 - MHz
NF noise figure VCE =5V;
IC= 0.2 mA;
RS=2k;
f = 10 Hz to
15.7 kHz
- 2.8 - dB
VCE =5V;
IC= 0.2 mA;
RS=2k;
f = 1 kHz;
B = 200 Hz
- 3.3 - dB
Per device
hFE1/hFE2 hFE matching VCE =5V;
IC=2mA [3] 0.98 1 -
VBE1VBE2 VBE matching VCE =5V;
IC=2mA [4] --2mV
Table 8. Characteristics
…continued
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
PMP4201V_G_Y_3 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 03 — 15 September 2006 6 of 14
Philips Semiconductors PMP4201V; PMP4201G; PMP4201Y
NPN/NPN matched double transistors
Tamb =25°CV
CE =5V
(1) Tamb = 100 °C
(2) Tamb =25°C
(3) Tamb =55 °C
Fig 1. Collector current as a function of
collector-emitter voltage; typical values Fig 2. DC current gain as a function of collector
current; typical values
IC/IB=20
(1) Tamb =55 °C
(2) Tamb =25°C
(3) Tamb = 100 °C
IC/IB=20
(1) Tamb = 100 °C
(2) Tamb =25°C
(3) Tamb =55 °C
Fig 3. Base-emitter saturation voltage as a function of
collector current; typical values Fig 4. Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa532
VCE (V)
0108462
0.08
0.12
0.04
0.16
0.20
IC
(A)
0
IB (mA) = 4.50
2.70
3.15
4.05
3.60
0.45
0.90
1.35
1.80
2.25
006aaa533
200
400
600
hFE
0
IC (mA)
102103
102
101101
(3)
(1)
(2)
006aaa534
IC (mA)
101103
102
110
0.5
0.9
1.3
0.3
0.7
1.1
VBEsat
(V)
0.1
(1)
(2)
(3)
006aaa535
1
101
10
VCEsat
(V)
102
IC (mA)
101103
102
110
(1)
(2)
(3)
PMP4201V_G_Y_3 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 03 — 15 September 2006 7 of 14
Philips Semiconductors PMP4201V; PMP4201G; PMP4201Y
NPN/NPN matched double transistors
VCE =5V; T
amb =25°CV
CE =5V; T
amb =25°C
Fig 5. Base-emitter voltage as a function of collector
current; typical values Fig 6. Transition frequency as a function of collector
current; typical values
f = 1 MHz; Tamb =25°C f = 1 MHz; Tamb =25°C
Fig 7. Collector capacitance as a function of
collector-base voltage; typical values Fig 8. Emitter capacitance as a function of
emitter-base voltage; typical values
006aaa536
0.6
0.8
1
VBE
(V)
0.4
IC (mA)
101103
102
110
006aaa537
IC (mA)
110
2
10
102
103
fT
(MHz)
10
006aaa538
VCB (V)
0108462
2
1
3
5
4
Cc
(pF)
0
006aaa539
VEB (V)
0642
9
11
7
13
15
Ce
(pF)
5
PMP4201V_G_Y_3 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 03 — 15 September 2006 8 of 14
Philips Semiconductors PMP4201V; PMP4201G; PMP4201Y
NPN/NPN matched double transistors
8. Application information
9. Package outline
Fig 9. Current mirror Fig 10. Differential amplifier
006aaa523
VCC
lout
R1
TR2TR1
006aaa525
IN2IN1 TR2TR1
OUT2
V+
V
OUT1
Fig 11. Package outline SOT666 Fig 12. Package outline SOT353 (SC-88A)
Fig 13. Package outline SOT363 (SC-88)
Dimensions in mm 04-11-08
1.7
1.5
1.7
1.5
1.3
1.1
1
0.18
0.08
0.27
0.17
0.5
pin 1 index
123
456
0.6
0.5
0.3
0.1
04-11-16Dimensions in mm
0.25
0.10
0.3
0.2
1.3
0.65
2.2
2.0 1.35
1.15
2.2
1.8 1.1
0.8
0.45
0.15
132
45
06-03-16Dimensions in mm
0.25
0.10
0.3
0.2
pin 1
index
1.3
0.65
2.2
2.0 1.35
1.15
2.2
1.8 1.1
0.8
0.45
0.15
132
465
PMP4201V_G_Y_3 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 03 — 15 September 2006 9 of 14
Philips Semiconductors PMP4201V; PMP4201G; PMP4201Y
NPN/NPN matched double transistors
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
[2] T1: normal taping
[3] T2: reverse taping
11. Soldering
Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type
number Package Description Packing quantity
3000 4000 8000 10000
PMP4201V SOT666 2 mm pitch, 8 mm tape and reel - - -315 -
4 mm pitch, 8 mm tape and reel - -115 - -
PMP4201G SOT353 4 mm pitch, 8 mm tape and reel -115 - - -135
PMP4201Y SOT363 4 mm pitch, 8 mm tape and reel; T1 [2] -115 - - -135
4 mm pitch, 8 mm tape and reel; T2 [3] -125 - - -165
Reflow soldering is the only recommended soldering method.
Fig 14. Reflow soldering footprint SOT666
solder lands
solder resist
placement area
occupied area
0.075 Dimensions in mm
2.75
2.45
2.10
1.60
1.20
2.20
2.50
2.00 1.70 1.00 0.30 (2×)
0.15
(4×)
0.375
(4×)
0.40
(6×)
0.55
(2×)
PMP4201V_G_Y_3 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 03 — 15 September 2006 10 of 14
Philips Semiconductors PMP4201V; PMP4201G; PMP4201Y
NPN/NPN matched double transistors
Dimensions in mm
Fig 15. Reflow soldering footprint SOT353 (SC-88A)
Dimensions in mm
Fig 16. Wave soldering footprint SOT353 (SC-88A)
msa366
1.20
2.40
0.50
(4×)
0.40 0.90 2.10
0.50
(4×)
0.60
(1×)
2.35
2.65
solder lands
solder resist
occupied area
solder paste
solder lands
solder resist
occupied area
1.15
3.75
transport direction during soldering
1.000.30 4.00
0.704.50
2.652.25
2.70
PMP4201V_G_Y_3 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 03 — 15 September 2006 11 of 14
Philips Semiconductors PMP4201V; PMP4201G; PMP4201Y
NPN/NPN matched double transistors
Fig 17. Reflow soldering footprint SOT363 (SC-88)
Fig 18. Wave soldering footprint SOT363 (SC-88)
sot363
1.20
2.40
0.50
(4×)
0.40
(2×)0.90 2.10
0.50
(4×)
0.60
(2×)
2.35
2.65
solder lands
solder resist
occupied area
solder paste
Dimensions in mm
solder lands
solder resist
occupied area
1.15
3.75
transport direction during soldering
1.000.30 4.00
4.50
5.25
sot363
Dimensions in mm
PMP4201V_G_Y_3 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 03 — 15 September 2006 12 of 14
Philips Semiconductors PMP4201V; PMP4201G; PMP4201Y
NPN/NPN matched double transistors
12. Revision history
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PMP4201V_G_Y_3 20060915 Product data sheet - PMP4201G_Y_2
Modifications: Type number PMP4201V added
Section 13 “Legal information”: updated
PMP4201G_Y_2 20060214 Product data sheet - PMP4201G_Y_1
PMP4201G_Y_1 20060131 Product data sheet - -
PMP4201V_G_Y_3 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 03 — 15 September 2006 13 of 14
Philips Semiconductors PMP4201V; PMP4201G; PMP4201Y
NPN/NPN matched double transistors
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.semiconductors.philips.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Philips Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Philips Semiconductors
sales office. In case of any inconsistency or conflict with the short data sheet,
the full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, Philips Semiconductors does not give any representations
or warranties, expressed or implied, as to the accuracy or completeness of
such information and shall have no liability for the consequences of use of
such information.
Right to make changes — Philips Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — Philips Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a Philips Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Philips Semiconductors accepts no liability for inclusion and/or use
of Philips Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Philips Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — Philips Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.semiconductors.philips.com/profile/terms, including those
pertaining to warranty, intellectual property rights infringement and limitation
of liability, unless explicitly otherwise agreed to in writing by Philips
Semiconductors. In case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
Philips Semiconductors PMP4201V; PMP4201G; PMP4201Y
NPN/NPN matched double transistors
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
For more information, please visit: http://www.semiconductors.philips.com.
For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com.
Date of release: 15 September 2006
Document identifier: PMP4201V_G_Y_3
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
8 Application information. . . . . . . . . . . . . . . . . . . 8
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Packing information. . . . . . . . . . . . . . . . . . . . . . 9
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
14 Contact information. . . . . . . . . . . . . . . . . . . . . 13
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14