NTE2402 (NPN) & NTE2403 (PNP)
Silicon Complementary Transistors
Low Noise, UHF/VHF Amplifier
Description:
The NTE2402 (NPN) and NTE2403 (PNP) are silicon complementary transistors in an SOT–23 type
surface mount package designed for use in UHF and microwave amplifiers in thick and thin–film cir-
cuits, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. These tran-
sistors feature low intermodulation distortion and high power gain. Due to very high transition fre-
quency, these devices also have excellent wideband properties and low noise up to high frequencies.
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO 20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, VCEO 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEBO 2V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Collector Current, IC25mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TA ≤ +60°C, Note 1), Ptot 200mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, TJ+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient (Note 1), RthJA 430K/W. . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm).
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current ICBO VCB = 10V, IE = 0 – – 50 nA
DC Current Gain hFE VCE = 10V, IC = 14mA 25 50 –
Transition Frequency fTVCE = 10V, IC = 14mA, f = 500MHz – 5 – GHz
Collector Capacitance CcVCB = 10V, IE = Ie = 0, f = 1MHz – 0.75 – pF
Emitter Capacitance CeVEB = 0.5V, IC = Ic = 0, f = 1MHz – 0.8 – pF
Feedback Capacitance Cre VCE = 10V, IC = 2mA, f = 1MHz,
TA = +25°C– 0.4 – pF
Electrical Characteristics (Cont’d): (TJ = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Noise Figure (At Optimum
Source Impedance) F VCE = 10V, IC = 2mA, f = 500MHz,
TA = +25°C–2.4 –dB
Max. Unilateral Power Gain
(sre Assumed to be Zero) GUM VCE = 10V, IC = 2mA, f = 500MHz,
TA = +25°C, Note 2 –18 –dB
Output Voltage
(At dim = –60dB) VOVCE = 10V, IC = 14mA, RL = 75Ω,
TA = +25°C, f(p+q–r) = 493,25MHz –150 –mV
Note 2. GUM = 10 log |sfe|2 / [1 – |sie|2] [1 – |soe|2].
.098
(2.5)
Max
.074 (1.9)
.118 (3.0) Max .051
(1.3)
.043 (1.1)
.007 (0.2)
.016 (0.48)
.037 (0.95)
B
C
E
