NTE2402 (NPN) & NTE2403 (PNP) Silicon Complementary Transistors Low Noise, UHF/VHF Amplifier Description: The NTE2402 (NPN) and NTE2403 (PNP) are silicon complementary transistors in an SOT-23 type surface mount package designed for use in UHF and microwave amplifiers in thick and thin-film circuits, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. These transistors feature low intermodulation distortion and high power gain. Due to very high transition frequency, these devices also have excellent wideband properties and low noise up to high frequencies. Absolute Maximum Ratings: Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2V DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA Total Power Dissipation (TA +60C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 430K/W Note 1. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm). Electrical Characteristics: (TJ = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit nA Collector Cutoff Current ICBO VCB = 10V, IE = 0 - - 50 DC Current Gain hFE VCE = 10V, IC = 14mA 25 50 - Transition Frequency fT VCE = 10V, IC = 14mA, f = 500MHz - 5 - GHz Collector Capacitance Cc VCB = 10V, IE = Ie = 0, f = 1MHz - 0.75 - pF Emitter Capacitance Ce VEB = 0.5V, IC = Ic = 0, f = 1MHz - 0.8 - pF Feedback Capacitance Cre VCE = 10V, IC = 2mA, f = 1MHz, TA = +25C - 0.4 - pF Electrical Characteristics (Cont'd): (TJ = +25C unless otherwise specified) Parameter Symbol Noise Figure (At Optimum Source Impedance) Max. Unilateral Power Gain (sre Assumed to be Zero) Output Voltage (At dim = -60dB) Test Conditions Min Typ Max Unit F VCE = 10V, IC = 2mA, f = 500MHz, TA = +25C - 2.4 - dB GUM VCE = 10V, IC = 2mA, f = 500MHz, TA = +25C, Note 2 - 18 - dB VO VCE = 10V, IC = 14mA, RL = 75, TA = +25C, f(p+q-r) = 493,25MHz - 150 - mV Note 2. GUM = 10 log |sfe|2 / [1 - |sie|2] [1 - |soe|2]. .016 (0.48) C B .098 (2.5) Max E .037 (0.95) .074 (1.9) .118 (3.0) Max .051 (1.3) .043 (1.1) .007 (0.2)