Datashee
t
LIN Transceiver for Automotive
BD41030FJ-C
BD41030HFN-C
General Description
BD41030FJ-C,BD41030HFN-C is the best transceiver
for BUS system which need LIN (Local Interconnect
Network) master and slave protocol.
BD41030FJ-C,BD41030HFN-C is low standby electricity
consumption in sleep mode.
BD41030FJ-C:SOP-J8
BD41030HFN-C:HSON8
Features
Compliant with LIN2.0,LIN2.1,LIN2.2,LIN2.2A
AEC-Q100 Qualified(Note 1)
Absolute maximum ratings of LIN pin is -27V to+40V
Max transmission rate 20kbps
Low Electro Magnetic Emission (EME)
High Electro Magnetic Immunity (EMI)
High impedance at power off for bus
Interface (RXD/TXD) with protocol layer
corresponds to 3.3V/5.0V logic.
Built-in terminator for LIN slave
Standby power consumption in sleep mode
Transmit data(T X D ) dominant time-out function
Resistant to LIN-BAT/GND short-circuit
Built-in Thermal Shut Down(TSD)
(Note1:Grade1)
Applications
LIN communication for Automotive networks.
Key Specifications
Supply Voltage: 5V to 27V
Supply Current (Sleep mode): 1μA to 8μA
Supply Current: 100μA to 1000μA
(Standby mode; Recessive)
Supply Current: 100μA to 1000 μA
(Norm al mode; R ecessive)
Supply Current: 200μA to 2000μA
(Normal mode; Dominant)
Package(s) W(Typ) x D(Typ) x H(Max)
■SOP-J8 4.90mm x 6.00mm x 1.65mm
■HSON8 2.90mm x 3.00mm x 0.60mm
Ty pica l Application Circuit(s)
BD41030FJ-C
BD41030HFN-C
INH
RXD
TXD
NSLP
NWAKE
LIN
GND
Regulator
Micro
Controller
2.4kΩ
100nF
5V/3.3V
EN
V
IN
100nF
10kΩ
33kΩ
(1)
1kΩ
Only
Master node
LIN
Bus line
V
ECU
GND
VDD
(1) Master:C= 1nF ; S lave:C=220pF
Figure 1. Typical Applic ation Circuit
SOP-J8(BD41030FJ-C)
HSON8(BD41030HFN-C)
〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays
. 1/21 TSZ02201-0E2E0H500640-1-2
© 2015 ROHM Co., Ltd. All rights reserved. 2016.08.18 Rev.002
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BD41030FJ-C BD41030HFN-C
Contents
General Des cription ........................................................................................................................................................................ 1
Features.......................................................................................................................................................................................... 1
Applications .................................................................................................................................................................................... 1
Key Specifications ........................................................................................................................................................................... 1
Package(s) ...................................................................................................................................................................................... 1
T y pical Application Circu it(s) ........................................................................................................................................................... 1
Contents ......................................................................................................................................................................................... 2
Pin Configuration(s) ........................................................................................................................................................................ 3
Pin Description(s) ........................................................................................................................................................................... 3
Block Diagram(s) ............................................................................................................................................................................ 3
Description of Block(s) .................................................................................................................................................................... 4
Absolute Maximum Ratings ............................................................................................................................................................ 6
Recommended Operating Conditions ............................................................................................................................................. 6
Electrical Characteristics................................................................................................................................................................. 7
Timing Chart ................................................................................................................................................................................. 11
Application Example(s) ................................................................................................................................................................. 13
Power Dissipation ......................................................................................................................................................................... 14
I/O equivalent cir cui t (s) ................................................................................................................................................................. 15
Operational Notes ....................................................................................................................................................................... 16
Ordering Infor mat ion ..................................................................................................................................................................... 18
Marking Di agrams ......................................................................................................................................................................... 18
Physical Dimension, Tape and Reel Information ........................................................................................................................... 19
Revision His tory ............................................................................................................................................................................ 21
〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays
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BD41030FJ-C BD41030HFN-C
Pin Configuration(s)
Figure 2. Pin Configuration
Pin Description(s)
Table 1. Pin Description
Pin No. Pin Name Function
1 RXD
Received data output pin (Open Drain).
“L” is output at standby mode.
2 NSLP
Sleep control inp ut pin (“L” Active mode).
Shift to sleep mode by “L” input in normal mode.
3 NWAKE
Local wake-up i nput pin (“L” Active mode).
Active at leading edge.
4 TXD Transmission data input pin
5 GND Ground
6 LIN LIN bus input and output pin.
7 BAT Power supply pin.
8 INH
Sleep sta tus ind ic ator.
“Hi-z” at sleep mode and “H” in the other modes.
Block Diagram(s)
Figure 3. Block diagram
1
INH
RXD
TXD
NSLP
BAT
NWAKE
LIN
GND
(TOP VIEW)
2
3
4
5
6
7
8
8
7
6
5
1
2
3
4
INH
RXD
TXD
NSLP
BAT
NWAKE
LIN
GND
(TOP VIEW)
SOP-J8
HSON8
〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays
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BD41030FJ-C BD41030HFN-C
Description of Block(s)
1. Sleep mode
In sleep mode, the transmit/receive function is not available and BD41030FJ-C is under the condition of low power
consumption mode. In thi s mode BD41030FJ-C shifts to sleep mode at startup of power supply (VBAT) when N SLP i s “L”
or in normal mode also when pin NSLP is “L”.
During sleep mode, one of the following wake-up events triggers a shif t of st at e :
・Pin NWAKE “H”→“L” (Shift to standby mode)
・Pin LIN “H”→“L”→“H” (Shift to standby mode)
・Pin NSLP “L”→“H” (Shift to normal mode)
The above-mentioned wake-up events shift the mode when a state remains for a given period of time (tNWAKE, tBUS,
tgotonorm). Hereinafter, a wake-up event on pin NWAKE is defined as Local wake-up, and a wake-up event on pin LIN is
defined as Remote wake-up.
2. Standby mode
When a wake-up event occurs on pin NWAKE or pin LIN in sleep mode, BD41030FJ-C shifts to standby mode.
In standby mode, pins become the following state:
・Pin INH “H” (≒VBAT voltage)
・Pin RXD “L” (Informs the microcontroller of being in standby mode.)
・Pin LIN Slave resistor ON
BD41030FJ-C shifts from standby mode to normal mode when pin NSLP input switches to “H”.
3. Normal mode
BD41030FJ-C shifts to normal mode when pin NSLP switches to “H” in sleep mode or standby mode. In normal mode,
data can be transmitted or received through the bus line. When receiving data, the transceiver informs a LIN bus input
from pin RXD to the microcontroller. When transmitting data, the transceiver converts a TXD input signal to a
slew-rate-controlled LIN bus signal and informs the bus line of the converted signal. The maximum operating frequency
in this mode is 10 kHz.
From this mode, BD41030FJ-C shifts to sleep mode when pin NSLP input switches to “L” and this state remains for a
given period of time (tgotosleep).
NSLP L
RXD L
INH H (O N)
Termination 30kΩ
Transmitter OFF
NSLP HNSLP L
RXD LIN bus data RXD Hi-z
INH H (O N) INH Hi-z
Termination 30kΩ Termination Weak pul l up
Transmitter ON Transmitter OFF
S t andby m ode
S leep m ode
Normal m ode
unpower
state
NSLP=H: aft er L to H > t
gotonorm
NWAKE=L : after H to L > t
NWAKE
or
LIN=Lto H : after LIN=L > t
BUS
V
BAT
<V
POR
V
BAT
<V
POR
V
BAT
>V
POR
and
NSLP=H : after L t o H > t
gotonorm
V
BAT
>V
POR
and
NSLP=L
NSLP=L : after H t o L > t
gotosleep
whi l e TXD=H
*V
POR
=reset Voltage
NSLP=H: aft er L to H > t
gotonorm
Figure 4. State Transitio n Char t
Table 2. The state of the pin in each mode
MODE NSLP TXD RXD INH TRANSMITTER
Sleep mode L pull-down Hi-z Hi-z OFF
Standby mode L pull-down L H OFF
Normal mode H pull-down
H
：
recessive state
L
：
dominant state
H ON
〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays
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BD41030FJ-C BD41030HFN-C
4. TXD dominant time-out counters Fail-safe function
A TXD dominant time-out counter prevents the bus line from being driven to a permanent dominant state (blocking all
network communication) in case pin TXD input is forced permanently low by a hardware and/or software application
failure. The timer is trigged by a negative edge on pin TXD and in case the value exceeds the internal timer value (tdom),
the transm itter becomes disabled and drives the bus line into a recessive state. The timer is reset by a positive edge on
pin TX D input.
5. Fail-safe function
・Pin TXD provides a pull-down to GND in order to force a predefined level on input pin TXD in case the pin TXD is not
connected.
・Pin NSLP provides a pull-down to GND in order to force the transceiver into sleep mode in case the pin NSLP is not
connected.
・Pin RXD is “Hi-z” in case of lost power supply on pin VBAT.
・The output driver at pin LIN will be off when junction temperature exceeds TJ activating the TSD circuit without relation
to input signal at pin TXD. Because the thermal shut down circuitry has a hysteresis band, junction temperature
depends on TXD terminal input signal for the LIN terminal output driver again when 15 degrees Celsius (Typ) degree
falls from detective temperature.
〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays
. 5/21 TSZ02201-0E2E0H500640-1-2
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BD41030FJ-C BD41030HFN-C
Absolute Maximum Ratings (Ta = 25°C)
Table 3. Absolute Maximum Ratings
Parameter Symbol Rating Unit
Supply voltage on pin BAT
(Note 1)
VBAT -0.3 to +40.0 V
DC voltage on pin TXD, RXD, NSLP
V
TXD,
VRXD,
VNSLP
-0.3 to +7.0 V
DC voltage on pin LIN VLIN -27 to +40 V
DC voltage on pin NWAKE VNWAKE -1 to VBAT + 0.3 V
Current on pin NWAKE
(Note 2)
INWAKE -15 mA
DC voltage on pin INH VINH -0.3 to VBAT + 0.3 V
Output current at pin INH IINH -50 to +15 mA
Power dissipation (SOP-J8)
(Note 3)
Pd 674 mW
Power dissipation (HSON8)
(Note 4)
Pd 630 mW
Storage temperature range Tstg -55 to +150 °C
Junction Max temperature Tjmax +150 °C
Electro static discharge （HBM）
(Note 4)
VESD 4000 V
(Note 1) Pd, ASO should not be exc eed ed.
(Note 2) Available only when VNWAKE < VGND-0.3V. Current flow to pin GND.
(Note 3) Regarding above Ta=25°C, Pd decreased at 5.40mW/°C for temperatures when mounted on 70x70x1.6mm Glass-epoxy PCB.
(Note 4) Regarding above Ta=25°C, Pd decreased at 5.04mW/°C for temperatures when mounted on 70x70x1.6mm Glass-epoxy PCB.
(Note 5) JEDEC qualified.
Caution: Operating th e IC ove r the absol ute ma ximum rati ngs ma y damage t he IC. Th e damag e can eit her be a short ci rcuit bet ween pi ns or an op en circ uit
betwee n pi ns a nd the i nt er nal c i rcui t r y. T here for e, i t is im po rtant t o c onsider ci r cuit protection me asu res, such as adding a fus e, i n c a se t he IC is op er ate d over
the absolute maximum ratings.
Recommended Operati ng Conditions
Table 4. Recommended Operating Conditions
Parameter Symbol Range Unit
Supply voltage VBAT 5.0 to 27.0 V
Operating temperature range Topr -40 to +125 °C
〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays
. 6/21 TSZ02201-0E2E0H500640-1-2
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BD41030FJ-C BD41030HFN-C
Electrical Characteristics (Ta= -40 to +125°C; VBAT =5 to 27V; RL(LIN-BAT) =500Ω; typical values are given at
Ta=25°C; VBAT =12V; unless otherwise specified)
Table 5. Electrical Characteristic s
Parameter Symbol Min Typ Max Unit Conditions
BAT
Supply current 1 on pin BAT
(Sleep mode) IBAT1 1 3 8 μA
Sleep mode.
VLIN = VBAT
VNWAKE = VBAT
VTXD = 0V
VNSLP = 0V
Supply current 2 on pin BAT
(Standby mode, Rec essive) IBAT2 100 400 1000 μA
Standby mode.
VLIN = VBAT (bus: Recessive)
VINH = VBAT
VNWAKE = VBAT
VTXD = 0V
VNSLP = 0V
Supply current 3 on pin BAT (Note 1)
(Standby mode, Dom inant) IBAT3 300 900 2000 μA
Standby mode.
VBAT = 12V
VLIN = 0V (bus: Dominant)
VINH = VBAT
VNWAKE = VBAT
VTXD = 0V
VNSLP = 0V
Supply current 4 on pin BAT
(Normal mode, Recessive) IBAT4 100 400 1000 μA
Normal mode.
VLIN = VBAT (bus: Recessive)
VINH = VBAT
VNWAKE = VBAT
VTXD = 5V
VNSLP = 5V
Supply current 5 on pin BAT (Note 1)
(Normal mode, Dominant) IBAT5 200 1000 2000 μA
Normal mode.
VBAT = 12V (bus: Dominant)
VINH = VBAT
VNWAKE = VBAT
VTXD = 0V
VNSLP = 5V
UVLO threshold voltage VUVLO - - 4.9 V
POR threshold voltage VPOR - - 4.3 V
TXD
High level input voltage VIH 2.0 - 7.0 V
Low level input voltage VIL -0.3 - +0.8 V
Hysteresis voltage Vhys 0.03 - 0.50 V
Pull-down resistor RTXD 125 350 800 kΩ VTXD = 5V
Low level input current IIL -5.0 0.0 +5.0 μA VTXD = 0V
NSLP
High level input voltage VIH 2.0 - 7.0 V
Low level input voltage VIL -0.3 - +0.8 V
Hysteresis voltage Vhys 0.03 - 0.50 V
Pull-down resistor RNSLP 125 350 800 kΩ VNSLP = 5V
Low level input current IIL -5.0 0.0 +5.0 μA VNSLP = 0V
(Note 1) When VBAT is 12V or m ore, a d d t o th e ci rc uit c u rre nt t he value cal culated b y the follo wing expressi o n b ecause IBAT dep en ds o n pull-up resistor insi d e
LIN terminal.
(20kΩ is the minimum value of pull-up resistor inside LIN terminal)
Ω
−
=k
V
20 12
BAT
se)BAT(increa
V
I
〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays
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BD41030FJ-C BD41030HFN-C
Electrical Characteristics (Ta= -40 to +125°C; VBAT =5 to 27V; RL(LIN-BAT) =500Ω; typical values are given at
Ta=25°C; VBAT =12V; unless otherwise specified)
Table 6. Electrical Characteristic s
Parameter Symbol Min Typ Max Unit Conditions
RXD (open-drain)
Low level output current IOL 1.3 3.5 - mA
Normal mode.
VLIN = 0V
VRXD = 0.4V
High level leakage current IOZH -5.0 0.0 +5.0 μA
Normal mode.
VLIN = VBAT
VRXD = 5V
NWAKE
High level input voltage VIH VBAT -
1.0 - VBAT +
0.3 V
Low level input voltage VIL -0.3 -
V
BAT
-
3.3
V
High level leakage current IIH -5.0 0.0 +5.0 μA VNWAKE = 27V
VBAT = 27V
Pull-up current IIL -30 -10 -3 μA VNWAKE = 0V
INH
Switch-
on resistance between pins
BAT and INH RINH - 30 50 Ω Standby mode, Normal mode.
IINH = -15mA, VBAT = 12V
High level leakage current IOZH -5.0 0.0 +5.0 μA
Sleep mode.
VINH = VBAT = 27V
LIN
LIN recessive output voltage VO_rec
V
BAT
ｘ
0.9
- VBAT V VTXD = 5V, ILIN = 0mA
LIN dominant output voltage
VO_dom1 - - 1.2 V VTXD = 0V, VBAT = 7.3V
VO_dom2 0.6 - - V
V
TXD
= 0V, V
BAT
= 7.3V
RL(LIN-BAT) = 1kΩ
VO_dom3 - - 2.0 V VTXD = 0V, VBAT = 18V
VO_dom4 0.8 - - V
V
TXD
= 0V, V
BAT
= 18V
RL(LIN-BAT) = 1kΩ
High level leakage current
I
IH
-5.0
0.0
+5.0
μA
V
LIN
= V
BAT
LIN pull-up current IIL -10.0 -5.0 -2.0 μA
Sleep mode.
VLIN = VNSLP = 0V
Pull-up r es is tan c e (S la ve t e rm ina t i on
resistance to pin BAT) RSLAVE 20 30 47 kΩ Standby mode, Normal mode.
VLIN = 0V, VBAT = 12V
Capacitance of pin LIN (Note 2) CLIN - - 30 pF
Short-circuit output current IO_SC0 40 - 200 mA
V
LIN
= V
BAT
= 18V, V
TXD
= 0V
t < tdom
Input leakage current at the receiver
operating (included pull-up resistor) IBUS_PAS_dom -1 - - mA
V
LIN
= 0V
VBAT = 12V
VTXD = 5V
Input leakage current at the receiver
operating IBUS_PAS_rec - - 20 μA
V
LIN
= 18V
VBAT = 8V
VTXD = 5V
Loss of ground leakage current IBUS_NO_GND -1 - 1 mA VBAT = VGND = 12V
VLIN = 0V to 18V
Loss of battery leakage current IBUS_NO_BAT - - 100 μA
V
BAT
= 0V
VLIN = 18V
Receiver threshold voltage Vth_rx
V
BAT
x
0.4
-
V
BAT
x
0.6
V VBAT = 7.3V to 27.0V
Receiver cent er voltage (Note 3) Vcn_rx VBAT x
0.475 VBAT x
0.500 VBAT x
0.525 V VBAT = 7.3V to 27.0V
Vcn_rx = (Vth_dom + Vth_rec)/2
Receiver threshold hysteresis
voltage (Note 3) Vth_hys VBAT x
0.100 VBAT x
0.140 VBAT x
0.175 V VBAT = 7.3V to 27.0V
Vth_hys = Vth_rec - Vth_dom
(Note 2) It is a design guarantee parameter, and is not p ro duc ti on tested.
〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays
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BD41030FJ-C BD41030HFN-C
Electrical Characteristics (Ta= -40 to +125°C; VBAT =5 to 27V; RL(LIN-BAT) =500Ω; typical values are given at
Ta=25°C; VBAT =12V; unless otherwise specified)
Table 7. Electrical Characteristic s
Parameter Symbol Min Typ Max Unit Conditions
AC characteristics
(Note 7)
RXD propagation delay
t
PropRxDom
-
-
6.0
μs
Normal mode
CL(LIN-GND) = 0nF
RL(LIN-BAT) = ∞
Voltage on LIN
externally forced.
LIN tf, tr < 20ns
CRXD = 20pF
RRXD = 2.4kΩ
⊿td_(BUS-RXD)=
tPropRxDom-tPropRxRec
tPropRxRec - - 6.0 μs
RXD propagation delay failure ⊿td_(BUS-RXD)
-2.0 0.0 +2.0 μs
Duty cycle 1 (Note 4, Note 5) D1 0.396 - -
Normal mode
THRec(max) = 0.744 x VBAT
THDom(max) = 0.581 x VBAT
VBAT=7.0 to 18.0V
tBit=50μs
Duty cycle 2 (Note 4, Note 6) D2 - - 0.581
Normal mode
THRec(min) = 0.422 x VBAT
THDom(min) = 0.284 x VBAT
VBAT=7.6 to 18.0V
tBit=50μs
Duty cycle 3 (Note 4, Note 5) D3 0.417 - -
Normal mode
THRec(max) = 0.778 x VBAT
THDom(max) = 0.616 x VBAT
VBAT=7.0 to 18.0V
tBit=96μs
Duty cycle 4 (Note 4, Note 6) D4 - - 0.590
Normal mode
THRec(min) = 0.389 x VBAT
THDom(min) = 0.251 x VBAT
VBAT=7.6 to 18.0V
tBit=96μs
Dominant time for wake-up via bus tBUS 30 70 150 μs
Sleep mode
(Remote wake-up)
Dominant time for wake-
up via pin
NWAKE
tNWAKE 7 20 50 μs Sleep mode
(Local wake-up)
Time period for mode change from
sleep or standby mode into normal
mode
tgotonorm 2 5 10 μs Shift from Sleep/Standby
mode to Normal mode
Time period for mode change from
normal mode into sleep mode
tgotosleep 2 5 10 μs
Shift from Normal mode to
Sleep mode
TXD dominant time out tdom 6 12 20 ms VTXD = 0V
(Note 3)
(Note 4) Load condition at bus ( CL(LIN-GND);RL(LIN-BAT) ) : 1nF;1kΩ / 6.8nF;660Ω / 10nF;500Ω
(Note 5)
Bit
(min) Bus_rec
2
3,1 xt
t
D
D=
〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays
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BD41030FJ-C BD41030HFN-C
(Note 6)
(Note 7) AC characteristic evaluation circuit diagram
INH
RXD
TXD
NSLP
NWAKE
LIN
GND
BAT
VCC
2.4kΩ
20pF
100nF
RL
CL
Bit
(max)
Bus_rec
2
4
,
2xt
t
D
D=
〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays
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BD41030FJ-C BD41030HFN-C
Timing Chart
LIN
RXD
50%
50%
0%
0.5xV
BAT
0.5xV
BAT
T
PropRXDom
T
PropRXRec
Figure 5. AC characteristic timing chart
THRec(max)
THDom(max)
THRec(min)
THDom(min)
VBAT
tBus_dom(max)
tBus_rec(min)
tBus_dom(min) tBus_rec(max)
LIN
TXD
tBit
tBit
Figure 6. Bus timing chart
Sleep Standby Normal
t<t
Bus
t
Bus
t<t
gotonorm
LIN
TXD
RXD
NSLP
INH
MODE
Figure 7. Remote wake-up (Sleep→Standby→Normal)
〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays
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BD41030FJ-C BD41030HFN-C
Figure 8. Local wake-up (Sleep→Standby→Normal)
Figure 9. Wake-up/Sleep-in with NSLP (Sleep→Normal→Sleep)
〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays
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BD41030FJ-C BD41030HFN-C
Applicatio n Exam pl e( s)
BD41030FJ-C
BD41030HFN-C
INH
RXD
TXD
NSLP
BAT
NWAKE
LIN
GND
Micro
Controller
2.4kΩ
(1)
1kΩ
Only
Master node
LIN
Bus line
V
ECU
GND
VDD
(1) Master:C=1nF ; S l ave:C=220pF
100nF
5V/3.3V
Figure 10. Application Example
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BD41030FJ-C BD41030HFN-C
Power Dissipation
■SOP-J8
■HSON8
Ambient T emperature : T a[℃]
800
700
600
500
400
300
200
100
0
0
25
50
75
100
125
150
Power Diss ipation : Pd[mW ]
(Note 1) Measured Board (70mm x 70mm x 1.6mm, gl ass epo xy 1-layer)
(Note 2) These values are changed by number of layer and copper foil area.
0
100
200
300
400
500
600
700
800
025 50 75 100 125 150
Ambient Temperatur e : Ta[℃]
Power Dis s ipation : P d[mW]
〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays
. 14/21 TSZ02201-0E2E0H500640-1-2
© 2015 ROHM Co., Ltd. All rights reserved. 2016.08.18 Rev.002
TSZ22111 • 14 • 001
www.rohm.com
BD41030FJ-C BD41030HFN-C
I/O equivalent circuit(s)
① RXD
RXD
② NSLP
NSLP
③ NWAKE
NWAKE
BAT
BAT
④ TXD
TXD
⑥ LIN
LIN
BAT
BAT
⑧ INH
INH
BAT
BAT
〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays
. 15/21 TSZ02201-0E2E0H500640-1-2
© 2015 ROHM Co., Ltd. All rights reserved. 2016.08.18 Rev.002
TSZ22111 • 14 • 001
www.rohm.com
BD41030FJ-C BD41030HFN-C
Operational Notes
1. Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power
supply pins.
2. Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to ground at
all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic
capacitors.
3. Ground Voltage
Except for pins the output and the input of which were designed to go below ground, ensure that no pins are at a
voltage below that of the ground pin at any time, even during transient condition.
4. Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces s hould be routed s eparately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground c aused by large c urrents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5. Thermal Consideration
Should by any chance the power dissipation rating be exceeded the rise in temperature of the chip may result in
deterioration of the properties of the chip. In case of exceeding this absolute maxim um rating, increas e the board size
and copper area to prevent exceeding the Pd rating.
6. Recommended Operating Conditions
These conditions represent a range within which the expected characteristics of the IC can be approximately
obtained. The electrical characteristics are guaranteed under the conditions of each parameter.
7. Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may
flow instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power
supply. Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring,
and routing of connections.
8. Operation Under Strong Electromagnetic Field
Operating the IC in the presence of a strong electrom agnetic field may cause the IC to malfunction.
9. Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may
subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply
should always be turned off completely before connecting or removing it from the test setup during the inspection
process. To prevent damage from static discharge, ground the IC during assem bly and use similar precautions during
transport and stora ge.
10. Inter-pin Short and Mounting Erro rs
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment)
and unintentional solder bridge deposited in between pins during assembly to name a few.
11. Unused Input Pins
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small
charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and
cause unexpected operation of the IC. So unless otherwise specified, unus ed input pins should be connected to the
power supply or ground line.
〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays
. 16/21 TSZ02201-0E2E0H500640-1-2
© 2015 ROHM Co., Ltd. All rights reserved. 2016.08.18 Rev.002
TSZ22111 • 14 • 001
www.rohm.com
BD41030FJ-C BD41030HFN-C
Operational Notes – continued
12. Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N jun ction oper ates as a par as iti c diode.
When GND > Pin B, the P-N junc tion operates as a parasitic trans istor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should
be avoided.
Figure 101. Example of monolithic IC structure
13. Ceramic Capacitor
When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
14. Are a of Safe Operation (ASO)
Operate the IC such that the output voltage, output current, and power dissipation are all within the Area of Safe
Operation (ASO).
15. Thermal Shutdown Circuit(TSD)
This IC has a bui lt-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always
be within the IC’s power dissipation rating. If however the rating is exceeded for a continued period, the junction
temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. W hen the Tj falls below
the TSD threshold, the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from
heat damage.
〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays
. 17/21 TSZ02201-0E2E0H500640-1-2
© 2015 ROHM Co., Ltd. All rights reserved. 2016.08.18 Rev.002
TSZ22111 • 14 • 001
www.rohm.com
BD41030FJ-C BD41030HFN-C
Orderin g Information
B D 4 1 0 3 0 x x x - C G x x
Part Number
Package
FJ: SOP-J8
HFN: HSON8
Product Rank
C: for Automo tive
Packaging and forming speci fication
G: Halogen free
E2 (SOP-J8): Embossed tape and reel
TR (HSON8): Embossed tape and reel
Marking Diagrams
HSON8(TOP VIEW)
D41
LOT Number
1PIN MARK
030
Part Number Marking
SOP-J8(TOP VIEW)
41030
LOT Number
1PIN MARK
Part Number Marking
〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays
. 18/21 TSZ02201-0E2E0H500640-1-2
© 2015 ROHM Co., Ltd. All rights reserved. 2016.08.18 Rev.002
TSZ22111 • 14 • 001
www.rohm.com
BD41030FJ-C BD41030HFN-C
Physical Dim ens io n, Tape and Reel Information
Package Name
SOP-J8
〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays
. 19/21 TSZ02201-0E2E0H500640-1-2
© 2015 ROHM Co., Ltd. All rights reserved. 2016.08.18 Rev.002
TSZ22111 • 14 • 001
www.rohm.com
BD41030FJ-C BD41030HFN-C
Physical Dim ens io n, Tape and Reel Information
Package Name
HSON8
〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays
. 20/21 TSZ02201-0E2E0H500640-1-2
© 2015 ROHM Co., Ltd. All rights reserved. 2016.08.18 Rev.002
TSZ22111 • 14 • 001
www.rohm.com
BD41030FJ-C BD41030HFN-C
Revision History
Date Revision Changes
12.Jun.2015
001
New Releas e
18.Aug.2016 002
・
HSON8 Full-scale revision by the package lineup addition
・Typical Performance Curves deletion
・P1 Modified T ypical A pplication Circuit
・P3 Modified Pin Descripti on
・P3 Modified Block diagram
・P4 Modified S tate Transition Chart
・P5 Modified Fail-safe function
・P6 Absolute Maximum Ratings Modified DC voltage on pin NWAKE
・P7 Elect rical Cha ract eristics Added「UVLO threshold voltage」「POR threshold voltage
」
・P8 Electrical Characteristics Modified「Capacitance of pin LIN」
・P13 Modified Application Example
・P14 Modified Power Dissipation
・
P15 Modified I/O equivalent circuit(s)
〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays
. 21/21 TSZ02201-0E2E0H500640-1-2
© 2015 ROHM Co., Ltd. All rights reserved. 2016.08.18 Rev.002
TSZ22111 • 14 • 001
www.rohm.com
Notice-PAA-E Rev.003
© 2015 ROHM Co., Ltd. All rights reserved.
Notice
Precaution on using ROHM Products
1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1),
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,
bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any
ROHM’s Products for Specific Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSϪ
CLASSϪ
CLASSϩb
CLASSϪ
CLASSϫ
CLASSϪ
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our
Products under any special or extraordinary environments or conditions (as exemplified below), your independent
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4. The Products are not subject to radiation-proof design.
5. Please verify and confirm characteristics of the final or mounted products in using the Products.
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PAA-E Rev.003
© 2015 ROHM Co., Ltd. All rights reserved.
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
Precaution Regarding Intellectual Property Rights
1. All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
DatasheetDatasheet
Notice – WE Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccur acy or errors of or
concerning such information.
Datasheet
Part Number bd41030fj-c
Package SOP-J8
Unit Quantity 2500
Minimum Package Quantity 2500
Packing Type Taping
Constitution Materials List inquiry
RoHS Yes
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