TLP190B
1 2017-06-05
TOSHIBA Photocoupler GaAℓAs IRED & Photo−Diode Array
TLP190B
Telecommunications
Programmable Controllers
MOS Gate Drivers
MOSFET Gate Drivers
The TOSHIBA TLP190B mini-flat photocoupler is suitable for surface-
mount assembly.
The TLP190B consists of a GaAℓAs infrared light emitting diode optically
coupled to a series connected photodiode array which is suitable for
MOSFET gate drivers.
TLP190 : Mini Flat Package, 4Pin, one circuit.
• Open voltage: 7.0V (min)
• Short current: 12.0 μA (min)
• Isolation voltage: 2500 Vrms (min)
• UL recognized: UL1577, file no. E67349
• cUL approved :CSA Component Acceptance Service
No. 5A, File No.E67349
Short Current
Type
Name Classification
Short Current Marking of
Classification
(min) IF
TLP190B
C20 20 μA
10 mA
20
Standard 12 μA 20, blank
Note: Application type name for certification test, please
use standard product type name, i.e.
TLP190B(C20) : TLP190B
Unit:
mm
TOSHIBA 11−4C1
Weight: 0.09 g (typ.)
1. Anode
3. Cathode
4. Cathode
6. Anode
6
4
1
3
Pin Configuration (top view )
TLP190B
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Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
LED
Forward current IF 50 mA
Forward current
derating (Ta ≥ 25°C) ΔIF /°C −0.5 mA / °C
Pulse forward current
(100μs pulse 100pps) IFP 1 A
Reverse voltage VR 3 V
Diode power dissipation
PD 100 mW
Diode power dissipation derating
(Ta >25°C)
△
PD /°C -1.0 mW/°C
Junction temperature Tj 125 °C
Detector
Forward current IFD 50 μA
Reverse voltage VRD 10 V
Output power dissipation PO 0.5 mW
Junction temperature Tj 125 °C
Storage temperature range Tstg −55 to 125 °C
Operating temperature range Topr −40 to 85 °C
Lead soldering temperature (10 s) Tsol 260 °C
Isolation voltage
(AC, 1 minute, R.H. ≤ 60%) Note 1 BVS 2500 Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4 and 6 shorted together.
Recommended Operating Condi t ions
Characteristic Symbol Min Typ. Max Unit
Forward current IF ― 20 25 mA
Operating temperature Topr −25 ― 85 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
TLP190B
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Individual Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
LED
Forward voltage VF IF = 10 mA 1.2 1.4 1.7 V
Reverse current IR VR = 3 V — — 10 μA
Capacitance between
terminals CT VF = 0V, f = 1 MHz — 30 60 pF
Detector
Forward voltage VFD IFD = 10 μA ― 7 — V
Reverse current IRD VRD = 10 V ― 1 — nA
Capacitance
(anode to cathode) CTD V = 0V, f = 1 MHz — ― — pF
Coupled Electrical Character i stics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Open voltage VOC IF = 10 mA 7 8 — V
Short current ISC IF = 10 mA 12 20 — μA
Isolation Characteristi cs (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Capacitance input to output CS VS = 0V, f = 1 MHz — 0.8 — pF
Isolation resistance RS VS = 500 V, R.H. ≤ 60% 5×10
10
10
14
— Ω
Isolation voltage BVS
AC, 1 minute 2500 — —
Vrms
AC, 1 second in oil — 5000 —
DC, 1 minute in oil — 5000 — Vdc
Switching Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Turn−on time tON IF = 20 mA, RSH = 510 kΩ
CL = 1000pF (Note 1)
— 0.2 — ms
Turn−off time tOFF — 1 — ms
Note 1: Switching time test circuit
VOUT
IF
CL
RSH
RSH: External shunt resistance
VOUT
IF
0V 1V
5V
tON tOFF
TLP190B
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I
F
– Ta
Ambient temperature Ta (°C)
Allowable forward current
IF (mA)
100
0
0 100
20 40 60 80
20
60
80
−20
40
ΔVF /ΔTa – IF
Forward current IF (mA)
Forward voltage temperature
Coefficient ΔVF /ΔTa (mV / °C)
−0.8
0.1 0.3 0.5 1 3 10 30
−1.2
−1.6
−2.0
−2.8
−2.4
−3.6
−3.2
−4.0
IF – VF
Forward voltage VF (V)
Forward current IF (mA)
100
1
1.0 1.2 1.4 1.6 1.8 2.0 2.2
3
5
10
30
50
Ta = 25 °C
IFP – DR
Duty cycle ratio D
R
Pulse forward current IFP (mA)
1000
10
0.0003
500
300
100
50
30
10−3
10−2
0.003
0.03
0.3
10
−1
1
3000
5000
Pulse width ≤ 100μs
Ta = 25 °C
TLP190B
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I
SC
– Ta
Ambient temperature Ta (°C)
Short current ISC (μA)
V
OC
– Ta
Ambient temperature Ta (°C)
Open voltage VOC (V)
VOC – IF
Forward current I
F
(mA)
Open voltage VOC (V)
10
0
1 100
t
ON,
t
OFF
– C
L
Load capacitance C
L
(
P
F)
Switching time tON, tOFF (ms)
100
0.01
300 3000
IO – VO
Output voltage V
O
(V)
Output current IO (μA)
0
ISC – IF
Forward current I
F
(mA)
Short current ISC (μA)
100
Ta = 25 °C
IF = 20 mA
40
20
0
−20
−40
−60
2 4 6 8 10
Ta = 25 °C
10mA
5mA
20mA
15mA
25mA
I
F
=0mA
8
6
4
2
3 5 10 30 50
Ta = 25 °C
R
SH
=2.4MΩ
300kΩ
510kΩ
1MΩ
RSH OPEN
1 100 3 5 10 30 50
0.1
0.3
0.5
1
3
10
30
50
Ta = 25 °C
12
0
0 120 20 40 60 80
−20
100
2
4
6
8
10
IF = 10mA
24
0
0 120 20 40 60 80
−20
100
4
8
12
16
20
IF = 10mA
0.03
0.1
0.3
1
3
10
30
10
2
10
3
10
4
300kΩ
510kΩ
1MΩ
2.4MΩ
RSH=2.4MΩ t
OFF
tON
1MΩ
510kΩ
300kΩ
IF=20mA
VOUT
CL
RSH
IF
VOUT
0V
5V
1V
tON
tOFF
TLP190B
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RESTRICTIONS ON PRODUCT USE
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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product,
or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all
relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for
Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for
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• GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or vapor.
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