VSMY3850 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES * * * * * * * * * * * * 94 8553 Package type: surface mount Package form: PLCC-2 Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 Peak wavelength: p = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity: = 60 Suitable for high pulse current operation Floor life: 168 h, MSL 3, acc. J-STD-020 Lead (Pb)-free reflow soldering Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note ** Please see document "Vishay Material Category Policy": www.vishay.com/doc?99902 DESCRIPTION VSMY3850 is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant intensity, high optical power and high speed, molded in a PLCC-2 package for surface mounting (SMD). RELEASED FOR APPLICATIONS Infrared radiation source for operation with CMOS cameras (illumination) * High speed IR data transmission * IR touch panels * 3D TV * Light curtain PRODUCT SUMMARY COMPONENT Ie (mW/sr) (deg) P (nm) tr (ns) 17 60 850 10 VSMY3850 Note * Test conditions see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMY3850-GS08 Tape and reel MOQ: 7500 pcs, 1500 pcs/reel PLCC-2 VSMY3850-GS18 Tape and reel MOQ: 8000 pcs, 8000 pcs/reel PLCC-2 Note * MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) SYMBOL VALUE Reverse voltage PARAMETER VR 5 V Forward current IF 100 mA tp/T = 0.5, tp 100 s IFM 200 mA tp = 100 s IFSM 1 A PV 200 mW Pulse peak forward current Surge forward current TEST CONDITION Power dissipation Junction temperature UNIT Tj 100 C Operating temperature range Tamb - 40 to + 85 C Storage temperature range Tstg - 40 to + 100 C acc. figure 7, J-STD-020 Tsd 260 C J-STD-051, soldered on PCB RthJA 250 K/W Soldering temperature Thermal resistance junction/ambient Rev. 1.2, 09-Sep-11 Document Number: 83399 1 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY3850 www.vishay.com Vishay Semiconductors 120 IF - Forward Current (mA) PV - Power Dissipation (mW) 250 200 150 100 50 100 80 60 40 20 RthJA = 250 K/W RthJA = 250 K/W 0 0 0 22541 20 40 60 80 100 0 Tamb - Ambient Temperature (C) 20 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 40 60 80 100 Tamb - Ambient Temperature (C) 22542 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF TEST CONDITION SYMBOL TYP. MAX. UNIT IF = 100 mA, tp = 20 ms VF 1.6 2.0 V IF = 1 A, tp = 100 s VF 2.9 V IF = 1 mA TKVF - 1.45 mV/K IF = 10 mA TKVF - 1.2 mV/K IR not designed for reverse operation A Reverse current Junction capacitance Radiant intensity VR = 0 V, f = 1 MHz, E = 0 Cj IF = 100 mA, tp = 20 ms Ie MIN. 125 12 17 pF 25 mW/sr IF = 1 A, tp = 100 s Ie 150 IF = 100 mA, tp = 20 ms e 55 mW IF = 100 mA TKe - 0.35 %/K Peak wavelength IF = 100 mA p Spectral bandwidth IF = 30 mA 30 nm Radiant power Temperature coefficient of e Angle of half intensity mW/sr 60 840 850 deg 870 nm Temperature coefficient of p IF = 100 mA TKp 0.25 nm/K Rise time IF = 100 mA tr 10 ns Fall time IF = 100 mA tf 10 ns d 0.44 mm Virtual source diameter Rev. 1.2, 09-Sep-11 Document Number: 83399 2 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY3850 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) 0 10 20 Ie, rel - Relative Radiant Intensity 1 0.1 0.01 40 1.0 0.9 50 0.8 60 70 0.7 - Angular Displacement 30 tp = 100 s IF - Forward Current (A) 10 80 0.001 0 0.5 1 1.5 2 2.5 3 0.6 0.4 0.2 0 94 8013 VF - Forward Voltage (V) 21892 Fig. 3 - Forward Current vs. Forward Voltage Fig. 6 - Relative Radiant Intensity vs. Angular Displacement 1000 Ie - Radiant Intensity (mW/sr) tp = 100 s 100 10 1 0.1 0.001 0.01 0.1 1 IF - Forward Pulse Current (A) 21893 Fig. 4 - Radiant Intensity vs. Forward Current e, rel - Relative Radiant Power 1 IF = 30 mA 0.75 0.5 0.25 0 650 21776-1 750 850 950 - Wavelength (nm) Fig. 5 - Relative Radiant Power vs. Wavelength Rev. 1.2, 09-Sep-11 Document Number: 83399 3 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY3850 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters technical drawings according to DIN specifications 0.9 1.75 0.1 3.5 0.2 Mounting Pad Layout Pin identification 4 C area covered with solder resist 2.6 (2.8) A 2.2 2.8 0.15 1.2 4 1.6 (1.9) O 2.4 3 + 0.15 Drawing-No.: 6.541-5067.02-4 Issue: 4; 19.07.10 20767 SOLDER PROFILE DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. 300 Temperature (C) max. 260 C 245 C 255 C 240 C 217 C 250 Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 168 h Conditions: Tamb < 30 C, RH < 60 % Moisture sensitivity level 3, acc. to J-STD-020. 200 max. 30 s 150 max. 100 s max. 120 s 100 max. ramp up 3 C/s max. ramp down 6 C/s 50 0 0 19841 50 100 150 200 250 FLOOR LIFE 300 Time (s) Fig. 7 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 C (+ 5 C), RH < 5 %. TAPE AND REEL PLCC-2 components are packed in antistatic blister tape (DIN IEC (CO) 564) for automatic component insertion. Cavities of blister tape are covered with adhesive tape. Rev. 1.2, 09-Sep-11 Document Number: 83399 4 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY3850 www.vishay.com Vishay Semiconductors Adhesive tape 10.0 9.0 120 4.5 3.5 Blister tape 2.5 1.5 Component cavity Identification Label: Vishay type group tape code production code quantity 94 8670 Fig. 8 - Blister Tape 3.5 3.1 2.2 2.0 13.00 12.75 63.5 60.5 14.4 max. 180 178 94 8665 Fig. 11 - Dimensions of Reel-GS08 5.75 5.25 3.6 3.4 4.0 3.6 8.3 7.7 10.4 8.4 120 1.85 1.65 1.6 1.4 4.1 3.9 4.1 3.9 4.5 3.5 0.25 2.05 1.95 2.5 1.5 94 8668 Fig. 9 - Tape Dimensions in mm for PLCC-2 MISSING DEVICES A maximum of 0.5 % of the total number of components per reel may be missing, exclusively missing components at the beginning and at the end of the reel. A maximum of three consecutive components may be missing, provided this gap is followed by six consecutive components. Identification Label: Vishay type group tape code production code quantity 13.00 12.75 62.5 60.0 321 329 14.4 max. 18857 Fig. 12 - Dimensions of Reel-GS18 De-reeling direction 94 8158 COVER TAPE REMOVAL FORCE The removal force lies between 0.1 N and 1.0 N at a removal speed of 5 mm/s. In order to prevent components from popping out of the blisters, the cover tape must be pulled off at an angle of 180 with regard to the feed direction. > 160 mm Tape leader 40 empty compartments min. 75 empty compartments Carrier leader Carrier trailer Fig. 10 - Beginning and End of Reel The tape leader is at least 160 mm and is followed by a carrier tape leader with at least 40 empty compartments. The tape leader may include the carrier tape as long as the cover tape is not connected to the carrier tape. The least component is followed by a carrier tape trailer with a least 75 empty compartments and sealed with cover tape. Rev. 1.2, 09-Sep-11 Document Number: 83399 5 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000