ES/EMM5717X Preliminary Ku / K Band Low Noise Amplifier MMIC FEATURES Low Noise Figure : NF = 1.5dB ( Typ.) @ f=12.7GHz High Associated Gain : Gas = 25dB ( Typ.) Broad Band : 12.7 - 24.0 GHz High Output Power : P1dB = 18dBm ( Typ. ) Impedance Matched Zin/Zout = 50 DESCRIPTION The EMM5717X is a LNA MMIC designed for applications in the 12.7 - 24.0 GHz frequency range. This product is well suited for satellite communications, radio link and applications where low noise and high dynamic range are required. Eudyna's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING Item Drain-Source Voltage Symbol VDD Rating Unit V Gate-Source Voltage VGG -3 V Input Power Storage Temperature Pin Tstg 0 dBm o C 4 -55 to +125 RECOMMENDED OPERATING CONDITIONS Item Drain-Source Voltage Operating Backside Temperature Symbol VDD Conditions <=3 Unit V Top -40 to +85 o ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25 C) Item Noise Figure Test Conditions Symbol NF VDD=3.0V IDD(DC)=170mA (typ.) Associated Gain Gas Min. - Limits Typ. Max. 1.5*1 2.0*1 2.5 *2 3.0 Zs=Zl=50ohm 22*1 25*1 - *1:f=12.7GHz *2 *2 dB *2 dB - 18 - dBm OIP3 IDD - 30 180 - dBm mA RLin RLout - -10 -10 - dB dB Output Power at 1dB G.C.P. P1dB Third Order Output Intercept Point Drain Current at 1dB G.C.P. Input Return Loss (at Pin=-20dBm) Output Return Loss (at Pin=-20dBm) *2:f=24GHz 18 21 Unit G.C.P.:Gain Compression Point ESD Class 0 Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k) Edition 1.1 July 2005 1 ~ 199V ES/EMM5717X Preliminary Ku / K Band Low Noise Amplifier MMIC OUTPUT POWER vs. FREQUENCY NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY VDD=3V, IDD(DC)=170mA VDD=3V, IDD(DC)=170mA 22 30 12 11 10 9 8 7 6 5 4 3 2 1 0 Pin=0dBm 25 20 15 10 8 Output Power[dBm] 20 Associated Gain [dB] Noise Figure[dB] P1dB 18 Pin=-5dBm 16 14 12 Pin=-10dBm 10 8 5 6 0 4 Pin=-15dBm 10 10 12 14 16 18 20 22 24 26 12 14 10 8 6 200 180 160 4 2 140 120 -2 Intermodulation Distortion[dBc] 240 220 Drain Current[mA] Output Power[dBm] 300 280 260 14 12 -14 -10 -6 Input Power[dBm] 24 26 -10 340 320 12GHz 16GHz 20GHz 24GHz -18 22 VDD=3V, IDD(DC)=170mA VDD=3V, IDD(DC)=170mA -22 20 IMD PERFORMANCE vs. TOTAL OUTPUT POWER OUTPUT POWER , DRAIN CURRENT vs. INPUT POWER 20 18 16 18 Frequency[GHz] Frequency[GHz] 24 22 16 12GHz 16GHz 20GHz 24GHz 12GH -20 -30 IM3 -40 -50 -60 IM5 -70 2 6 8 10 12 14 16 2-tone Total Output Power[dBm] 2 18 ES/EMM5717X Preliminary Ku / K Band Low Noise Amplifier MMIC NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY by Drain Current OUTPUT POWER, GAIN vs. Drain Current 26 35 140mA 170mA 200mA 140 A 24 30 20 15 10 10 12 14 16 18 20 22 24 26 Frequency[GHz] 3 36 34 20 32 18 30 16 28 14 26 12 24 10 22 8 20 6 120 5 8 P1dB[dBm] 25 22 38 12GHz 16GHz 20GHz 24GHz 140 160 180 200 Drain Current[mA] 18 220 G1dB[dB] 12 11 10 9 8 7 6 5 4 3 2 1 0 VDD=3V Associated Gain [dB] Noise Figure[dB] VDD=3V ES/EMM5717X Preliminary Ku / K Band Low Noise Amplifier MMIC OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by Drain Current OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by Drain Current VDD=3V, f=16GHz 300 280 260 14 12 240 220 10 8 6 200 180 160 4 2 140 120 -18 -14 -10 -6 Input Power[dBm] -2 18 16 240 220 10 8 200 180 6 4 160 140 2 120 2 -22 -18 320 300 Output Power[dBm] 280 18 260 240 12 10 220 200 8 180 6 4 160 140 120 2 2 -18 -14 -10 -6 Input Power[dBm] 2 -2 2 320 300 280 16 260 14 12 240 220 10 200 8 180 6 4 160 140 120 -22 4 340 140mA 170mA 200mA 140 A 22 20 Drain Current [mA] Output Power[dBm] 24 16 14 -22 -2 VDD=3V, f=24GHz 340 140mA 170mA 200mA 140 A 18 -14 -10 -6 Input Power[dBm] OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by Drain Current VDD=3V, f=20GHz 22 20 280 260 14 12 OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by Drain Current 24 320 300 -18 -14 -10 -6 Input Power[dBm] -2 2 Drain Current [mA] -22 340 140mA 170mA 200mA 140 A 22 20 Output Power[dBm] 20 18 16 24 340 320 140mA 170mA 200mA 140 A Drain Current [mA] Output Power[dBm] 24 22 Drain Current [mA] VDD=3V, f=12GHz ES/EMM5717X Preliminary Ku / K Band Low Noise Amplifier MMIC IMD PERFORMANCE vs OUTPUT POWER by Drain Current IMD PERFORMANCE vs OUTPUT POWER by Drain Current VDD=3V, f=12GHz VDD=3V, f=16GHz -10 140mA 170mA 200mA 140 A -20 Intermodulation Distortion[dBc] Intermodulation Distortion[dBc] -10 -30 IM3 -40 -50 IM5 -60 -70 140mA 170mA 200mA 140 A -20 -30 IM3 -40 -50 IM5 -60 -70 6 8 10 12 14 16 18 6 2-tone Total Output Power[dBm] 8 12 14 16 18 2-tone Total Output Power[dBm] IMD PERFORMANCE vs OUTPUT POWER by Drain Current IMD PERFORMANCE vs OUTPUT POWER by Drain Current VDD=3V, f=20GHz VDD=3V, f=24GHz -10 -10 140mA 170mA 200mA 140 A -20 Intermodulation Distortion[dBc] Intermodulation Distortion[dBc] 10 -30 IM3 -40 -50 -60 IM5 -70 140mA 170mA 200mA 140 A -20 -30 IM3 -40 -50 -60 IM5 -70 6 8 10 12 14 16 18 6 2-tone Total Output Power[dBm] 8 10 12 14 16 2-tone Total Output Power[dBm] 5 18 ES/EMM5717X Preliminary Ku / K Band Low Noise Amplifier MMIC S-PARAMETER VDD=3V, IDD(DC)=170mA 30 Sxx [dB] 20 10 0 -10 -20 S21 -30 S11 S22 -40 0 5 10 15 20 25 Frequency [GHz] 6 30 35 40 ES/EMM5717X Preliminary Ku / K Band Low Noise Amplifier MMIC S-PARAMETER VDD=3V, IDD(DC)=170mA Frequency [GHz] 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 27.0 28.0 29.0 30.0 31.0 32.0 33.0 34.0 35.0 36.0 37.0 38.0 39.0 40.0 S11 MAG ANG 0.972 -25.0 0.917 -48.6 0.858 -71.0 0.799 -93.7 0.733 -117.6 0.640 -144.5 0.513 -169.8 0.397 158.4 0.252 115.4 0.119 47.3 0.089 -46.5 0.087 -92.6 0.066 -100.1 0.070 -77.3 -69.7 0.105 -74.2 0.143 -82.1 0.175 -89.5 0.199 0.218 -96.2 0.233 -101.9 0.243 -105.9 0.252 -108.0 0.268 -108.2 0.296 -109.1 0.334 -110.4 0.387 -112.8 0.447 -117.9 0.517 -123.5 0.581 -131.2 0.638 -138.9 0.694 -147.4 0.736 -156.1 0.771 -164.6 0.796 -172.7 0.811 178.7 0.821 170.7 0.809 163.0 0.798 155.7 0.779 148.8 0.763 142.7 S21 MAG ANG 0.042 -2.8 0.083 -22.4 -40.1 0.150 0.299 -33.5 0.879 -46.2 -89.3 1.750 2.425 -127.7 2.871 -147.6 4.365 -158.2 8.317 174.0 13.127 131.2 86.8 16.647 45.7 18.401 8.4 18.923 -25.4 18.749 -56.6 18.261 -86.0 17.705 -114.0 17.065 16.465 -141.5 15.918 -167.8 15.295 166.0 14.609 140.3 114.8 13.925 89.3 13.181 12.420 64.3 11.599 39.5 10.747 14.8 9.841 -9.3 8.975 -33.3 8.090 -56.8 7.246 -79.9 6.459 -102.1 5.713 -123.9 5.057 -145.2 4.451 -165.7 3.947 174.0 3.470 154.2 3.071 134.9 2.726 116.0 2.415 96.4 7 S12 MAG ANG 0.000 35.5 0.000 -168.7 0.000 146.3 0.000 -118.6 0.000 104.5 0.000 18.4 0.000 -158.2 0.000 87.0 0.000 1.8 0.000 -29.7 0.000 142.1 0.000 -146.3 0.000 135.0 0.000 162.6 0.001 122.3 0.001 142.9 0.001 95.0 52.4 0.001 0.001 89.2 0.000 33.7 0.001 73.1 54.6 0.001 0.001 34.2 0.002 27.8 0.001 17.8 0.001 -15.2 0.002 -26.6 -27.1 0.001 0.001 -74.5 0.001 -75.2 0.002 -89.1 0.001 -82.0 0.002 -133.9 0.002 -114.7 0.003 -166.3 0.002 -167.7 0.001 152.7 0.001 177.1 0.001 152.5 0.001 113.7 S22 MAG ANG 0.975 -29.6 0.931 -56.4 0.900 -81.1 0.854 -105.6 0.763 -126.3 0.790 -141.1 0.769 -167.3 0.663 167.7 0.513 146.2 0.374 128.5 0.256 113.5 0.155 101.3 0.076 96.2 0.025 121.5 0.031 -154.9 0.058 -144.7 0.068 -143.5 0.071 -141.3 0.075 -133.7 0.081 -121.9 0.094 -109.0 0.126 -101.6 -99.4 0.175 0.223 -101.6 0.282 -106.5 0.341 -113.2 0.398 -121.1 0.454 -128.2 0.505 -136.9 0.546 -145.1 0.579 -153.3 0.609 -160.6 0.630 -168.0 0.646 -175.1 0.662 178.3 0.664 172.3 0.672 166.2 0.680 160.3 0.677 154.3 0.683 148.6 ES/EMM5717X Preliminary Ku / K Band Low Noise Amplifier MMIC Chip Outline and Bonding Pad Locations (Dimension in Micro-Meters) VGG2 VGG1 VGG3 505 0 375 635 1830 1230 1230 1125 615 615 RFin 105 0 0 0 315 105 445 VDD1 VDD2 775 1725 1830 VDD3 Chip Size : 183030um x 123030um Chip Thickness :8520um Pad Dimensions : 80um x 80um 8 ES/EMM5717X Preliminary Ku / K Band Low Noise Amplifier MMIC BONDUNG DIAGRAM & RECOMMENDED EXTERNAL CIRCUIT 1 uF VGG 100pF 50ohm Line 50ohm Line 100pF 100pF VDD 1 uF "Copper" is the recommended material for the package or carrier. 9 ES/EMM5717X Preliminary Ku / K Band Low Noise Amplifier MMIC DIE ATTACH Volume of Au-Sn Perform [10 3/mm 3] 1) The die-attach station must have accurate temperature control, and an inert forming gas should be used. 2)Chips should be kept at room temperature except during die-attach. 3) Place package or carrier on the heated stage. 4) Lightly grasp the chip edges by the longer side using tweezers. Die attach conditions Stage Temperature : 300 to 310 deg.C Time : less than 15 seconds AuSn Preform Volume : per next Figure 500 400 EMM5717X 300 200 100 0 0 1 2 3 4 5 2 Area of Chip Bach Surface [mm ] WIRE BONDING The bonding equipment must be properly grounded. The following or equivalent equipment, tools, materials, and conditions are recommended. 1) Bonding Equipment and Bonding Tool. Bonding Equipment : West Bond Model 7400 (Manual Bonder) Bonding Tool : CCOD-1/16-S-437-60-F-2010-MP (Deweyl) 2) Bonding Wire Material : Hard or Half hard gold Diameter : 0.7 to 1.0 mil 3) Bonding Conditions Method : Thermal Compression Bonding with Ultrasonic Power Tool Force : 0.196 N +/- 0.0196 N Stage Temperature : 215 deg.C +/- 5 deg.C Tool Heater : None Ultrasonic Power Transmitter : West Bond Model 1400 Duration : 150 mS/Bond 10 ES/EMM5717X Preliminary Ku / K Band Low Noise Amplifier MMIC For further information please contact : Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not put these products into the mouth. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others. Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 (c) 2005 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL +81-45-853-8156 FAX +81-45-853-8170 11