AP0903GYT-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D Good Thermal Dissipation Low On-resistance 30V RDS(ON) 9m ID G RoHS Compliant & Halogen-Free BVDSS 16A S D Description S The PMPAK 3x3 package is special for DC-DC converters application and low 1.0mm profile with backside heat sink. D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. (R) D S S G PMPAK(R) 3x3 Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 ID@TA=70 Rating Units 30 V +20 V Continuous Drain Current 3 16 A Continuous Drain Current 3 13 A 40 A 3.5 W 1 IDM Pulsed Drain Current PD@TA=25 Total Power Dissipation TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Parameter 3 Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice Value Units 35 /W 1 201009214 AP0903GYT-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=250uA 30 - - V VGS=10V, ID=10A - - 9 m VGS=4.5V, ID=8A - - 16 m VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=10A - 24 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 10 uA Drain-Source Leakage Current (T j=70 C) VDS=24V, VGS=0V - - 250 uA Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA ID=10A - 8.7 14 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=15V - 1.7 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 5 - nC 2 td(on) Turn-on Delay Time VDS=15V - 10 - ns tr Rise Time ID=1A - 7 - ns td(off) Turn-off Delay Time RG=6,VGS=10V - 24 - ns tf Fall Time RD=15 - 8 - ns Ciss Input Capacitance VGS=0V - 635 1010 pF Coss Output Capacitance VDS=25V - 215 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 125 - pF Rg Gate Resistance f=1.0MHz - 1.8 - Min. Typ. IS=2.9A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=10A, VGS=0V, - 27 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 20 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP0903GYT-HF 40 40 o o T A =150 C 10V 7.0V 6.0V 5.0V V G = 4.0V 30 ID , Drain Current (A) ID , Drain Current (A) T A =25 C 20 10 30 10V 7.0V 6.0V 5.0V V G =4.0V 20 10 0 0 0.0 1.0 2.0 3.0 0.0 4.0 2.0 V DS , Drain-to-Source Voltage (V) 4.0 6.0 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 16 I D =8A I D =10A V G =10V T A =25 o C 14 Normalized RDS(ON) RDS(ON) (m) 1.6 12 10 8 1.2 0.8 6 0.4 4 2 4 6 8 -50 10 0 50 100 150 o V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 10 1.6 o o T j =25 C T j =150 C Normalized VGS(th) (V) IS(A) 8 6 4 1.2 0.8 2 0 0.4 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP0903GYT-HF f=1.0MHz 10 1200 1000 8 800 C (pF) VGS , Gate to Source Voltage (V) I D =10A V DS =15V 6 C iss 600 4 400 2 C oss C rss 200 0 0 0 4 8 12 16 1 20 5 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 100us 10 ID (A) 1ms 10ms 1 100ms 1s 0.1 o T A =25 C Single Pulse DC Normalized Thermal Response (Rthja) Duty factor=0.5 Operation in this area limited by RDS(ON) 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t T Single Pulse Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthia=80 /W 0.001 0.01 0.01 0.1 1 10 100 0.0001 0.001 0.01 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4