TIP35C, 36C Complementary Power Transistors Designed for use in general purpose power amplifier and switching applications. Features: * Collector-Emitter Sustaining Voltage VCEO(sus) = 100V (Minimum) - TIP35C, TIP36C * DC Current Gain hFE = 25 (Minimum) at IC = 1.5A. * Current Gain-Bandwidth Product fT = 3.0MHz (Minimum) at IC = 1.0A. Dimensions Minimum Maximum A 20.63 22.38 B 15.38 16.20 C 1.90 2.70 D 5.10 6.10 E 14.81 15.22 F 11.72 12.84 G 4.20 4.50 H 1.82 2.46 I 2.92 3.23 J 0.89 1.53 K 5.26 5.66 L 18.50 21.50 M 4.68 5.36 2. Collector N 2.40 2.80 3. Emitter O 3.25 3.65 P 0.55 0.70 Pin 1. Base NPN TIP35C PNP TIP36C 25 Ampere Complementary Silicon Power Transistors 100 Volts 125 Watts TO-247(3P) Dimensions : Millimetres Maximum Ratings Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO Collector-Base Voltage VCBO Emitter-Base Voltage VEBO 5.0 Collector Current-Continuous -Peak IC 25 40 Base Current IB 5.0 Total Power Dissipation at Tc = 25C Derate above 25C PD 125 1.0 W W/C TJ, TSTG -65 to +150 C Operating and Storage Junction Temperature Range Page 1 100 V A 31/05/05 V1.0 TIP35C, 36C Complementary Power Transistors Thermal Characteristics Characteristic Symbol Maximum Unit Thermal Resistance Junction to Case Rjc 1.0 C/W PD, Power Dissipation (Watts) Figure - 1 Power Derating TC, Temperature (C) Electrical Characteristics (TC = 25C unless otherwise noted) Characteristic Symbol Minimum Maximum Unit VCEO(SUS) 100 - V Collector Cut off Current (VCE = 60V, IB = 0) ICEO - 1.0 Collector Cut off Current (VCE = 100V, VEB = 0) ICES - 0.7 Emitter Cut off Current (VEB = 5.0V, IC = 0) IEBO - 1.0 hFE 25 15 75 Collector-Emitter Saturation Voltage (IC = 15A, IB = 1.5A) (IC = 25A, IB = 5.0A) VCE(sat) - 1.8 4.0 Base-Emitter On Voltage (IC = 15A, VCE = 4.0V) (IC = 25A, VCE = 4.0V) VBE(on) - 2.0 4.0 fT 3.0 - MHz hfe 25 - - OFF Characteristics Collector-Emitter Sustaining Voltage (1) (IC = 30mA, IB = 0) mA ON Characteristics (1) DC Current Gain (IC = 1.5A, VCE = 4.0V) (IC = 15A, VCE = 4.0V) Dynamic Characteristics Current Gain Bandwidth Product (2) (IC = 1.0mA, VCE = 10V, fTEST = 1MHz) Small-Signal Current Gain (IC = 1.0A, VCE = 10V, f = 1kHz) V (1) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0% (2) fT = hfe * ftest Page 2 31/05/05 V1.0 TIP35C, 36C Complementary Power Transistors Figure - 3 Turn-Off Time t, Time (s) hFE, DC Current Gain Figure - 2 DC Current Gain IC, Collector Current (AMP) IC, Collector Current (AMP) Figure - 5 Reverse Base Safe Operating Area t, Time (s) IC Collector Current (AMP) Figure - 4 Turn-On time IC, Collector Current (AMP) VCE, Collector Emitter (Volts) Figure - 6 Active Region Safe Operating Area There are two limitations on the power handling ability of a IC, Collector Current (AMP) transistor: average junction temperature and second breakdown safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure - 6 is based on TC = 25C; TJ(pk) is variable depending on power level . Second breakdown pulse limits are valid for duty cycle to 10% but must be derated when TC 25C, second breakdown limitations do not derate the same as thermal limitation. VCE, Collector Emitter (Volts) Page 3 31/05/05 V1.0 TIP35C, 36C Complementary Power Transistors Specifiations IC(av) maximum (A) VCEO maximum (V) hFE minimum at IC = 15A Ptot at 25C (W) Package 25 100 15 125 TO-247 Page 4 Type Part Number NPN TIP35C PNP TIP36C 31/05/05 V1.0 TIP35C, 36C Complementary Power Transistors Notes: International Sales Offices: AUSTRALIA - Farnell InOne FINLAND - Farnell InOne NETHERLANDS - Farnell InOne SWITZERLAND - Farnell InOne Tel No: Tel No: Tel No: ++ 61 2 9645 8888 Fax No: ++ 61 2 9644 7898 Fax No: ++ 358 9 345 5411 Fax No: ++ 31 30 241 7333 Tel No: ++ 41 1 204 64 64 Fax No: ++ 41 1 204 64 54 AUSTRIA - Farnell InOne FRANCE - Farnell InOne NEW ZEALAND - Farnell InOne UK - Farnell InOne Tel No: Tel No: Tel No: Tel No: ++ 43 662 2180 680 ++ 358 9 560 7780 ++ 33 474 68 99 99 ++ 31 30 241 7373 ++ 64 9 357 0646 ++ 44 8701 200 200 Fax No: ++ 43 662 2180 670 Fax No: ++ 33 474 68 99 90 Fax No: ++ 64 9 357 0656 Fax No: ++ 44 8701 200 201 BELGIUM - Farnell InOne GERMANY - Farnell InOne NORWAY - Farnell InOne UK - BuckHickman InOne Tel No: Tel No: Tel No: ++ 45 44 53 66 66 ++ 44 8450 510 150 ++ 32 3 475 2810 ++ 49 89 61 39 39 39 Fax No: ++ 32 3 227 3648 Fax No: ++ 49 89 613 59 01 Fax No: ++ 45 44 53 66 02 ++ 44 8450 510 130 BRAZIL - Farnell-Newark InOne HONG KONG - Farnell-Newark InOne Tel No: ++ 852 2268 9888 PORTUGAL - Farnell InOne UK - CPC ++ 55 11 4066 9400 Tel No: ++ 34 93 475 8804 ++ 44 8701 202 530 Fax No: ++ 55 11 4066 9410 Fax No: ++ 852 2268 9899 Fax No: ++ 34 93 474 5288 ++ 44 8701 202 531 CHINA - Farnell-Newark InOne IRELAND - Farnell InOne SINGAPORE - Tel No: Tel No: Tel No: ++86 10 6238 5152 Fax No: ++86 10 6238 5022 Farnell-Newark InOne Tel No: ++ 65 6788 0200 ++ 353 1 830 9277 Fax No: ++ 353 1 830 9016 Fax No: ++ 65 6788 0300 export EXPORT - Farnell InOne Tel No: ++ 44 8701 200 208 Fax No: ++ 44 8701 200 209 For enquiries from all other markets DENMARK - Farnell InOne ITALY - Farnell InOne SPAIN - Farnell InOne Tel No: Tel No: Tel No: ++ 45 44 53 66 44 ++ 39 02 93 995 200 ++ 34 93 475 8805 Fax No: ++ 45 44 53 66 06 Fax No: ++ 39 02 93 995 300 Fax No: ++ 34 93 474 5107 ESTONIA - Farnell InOne MALAYSIA - SWEDEN - Farnell InOne http://www.farnellinone.com Tel No: ++ 358 9 560 7780 Fax No: ++ 358 9 345 5411 Farnell-Newark InOne Tel No: ++ 60 3 7873 8000 Fax No: ++ 60 3 7873 7000 Tel No: ++ 46 8 730 50 00 Fax No: ++ 46 8 83 52 62 http://www.buckhickmaninone.com http://www.cpc.co.uk Disclaimer This data sheet and its contents (the "Information") belong to the Premier Farnell Group (the "Group") or are licensed to it. 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