Number: DB-150
March 2010, Revision D
Page 1
TAK CHEONG ®
SEMICONDUCTOR
10A SCHOTTKY BARRIER DIODE
Full Pack High Voltage Schottky
Rectifier
Specification Features:
High Voltage Wide Range Selection, 100V, 150V & 200V
High Switching Speed Device
Low Forward Voltage Drop
Low Power Loss and High Efficiency
Guard Ring for Over-voltage Protection
High Surge Capability
RoHS Compliant
Matte Tin(Sn) Lead Finish
Terminal Leads Surface is Corrosion Resistant
and can withstand to 260°C Wave Soldering or
per MIL-STD-750, Method 2026.
DEVICE MARKING DIAGRAM
POLARITY CONFIGURATION
MAXIMUM RATINGS (Per Leg, unless otherwise specified )
Symbol Parameter MBRF10100CT MBRF10150CT MBRF10200CT Units
VRRM
VRWM
VR
Maximum Repetitive Reverse Voltage
Working Peak Reverse Voltage
Maximum DC Reverse Voltage 100 150 200 V
IF(AV) Average Rectified Forward Current
Per Leg
Per Package
5
10 A
IFSM Non-repetitive Peak Forward Surge Current
8.3mS Single Phase @ Rated Load 80 A
TSTG Storage Temperature Range -65 to +150 °C
TJ Operating Junction Temperature +150 °C
These ratings are limiting values above which the serviceability of the diode may be impaired.
THERMAL CHARACTERISTIC
Symbol Parameter Value
Units
RθJC Maximum Thermal Resistance, Junction-to-Case 1.5 °C/W
RθJA Maximum Thermal Resistance, Junction-to-Ambient (per leg) 62.5 °C/W
ELECTRICAL CHARACTERISTICS (Per Leg) TA = 25°C unless otherwise noted
MBRF10100CT MBRF10150CT MBRF10200CT
Symbol Parameter Test Condition
(Note 1) Min Max Min Max Min Max
Units
IR Reverse Current @ rated VR --- 100 --- 100 --- 100 μA
VF Forward Voltage IF = 5A
IF = 10A --- 0.85
0.95 --- 0.92
1.00 --- 1.00
1.25 V
Note/s:
1. Tested under pulse condition of 300μS.
MBRF10100CT through MBRF10200CT
123TO-220FP
1. Anode 2. Cathode 3. Anode
L xxyy
Line 2
Line 3
Line 4
L = Tak Cheong Logo
xxyy = Monthly Da te Code
Line 2 = MBRF
Line 3 = 10xxxCT
Line 4
=
Polarity
Number: DB-150
March 2010, Revision D
Page 2
TAK CHEONG ®
SEMICONDUCTOR
TYPICAL CHARACTERISTICS
0.01
0.1
1
10
00.20.40.60.81
VF - In stant aneo us Forward V ol tage [V]
I F - F orw ard Current [ A]
Ta=75
Ta=125
Ta=150
Ta=25
f = 1MHz
Ta = 2 5
10.0
100.0
1000.0
0 5 10 15 20 25 30 35 40
Rev erse V ol t age [V ]
Ty p ical Juncti o n Capaci tance
[pF]
MBRF10150CT
MBRF10200CT
MBRF10100CT
0
2
4
6
8
10
0 255075100125150
Tc - Case Temperature []
Average Forward Current [A]
0.010
0.100
1.000
10.000
100.000
1000.000
10000.000
0 1020 3040506070 8090100
VR - Rev erse V ol t ag e [ V ]
I R - Reverse Cu rretn [u A
]
Ta=25
Ta=75
Ta=125
Ta= 150
0.001
0.010
0.100
1.000
10.000
100.000
1000.000
0 10203040 5060708090100
VR - Rev erse Vol tage [V]
IR - Rever se Current [u A]
)
Ta=25
Ta=75
Ta=125
Ta= 150
0.001
0.010
0.100
1.000
10.000
100.000
1000.000
0 15 30 45 60 75 90 105 120 135 150
VR - Reverse Voltage [ V]
IR - Reverse Curr e nt [uA])
Ta=25
Ta=75
Ta=125
Ta = 15 0
Figure 1. Forward Current Derating Curve (Per Diode) Figure 2. Junction Capacitance (Per Diode)
Figure 3. MBRF10100CTTypical Reverse Current (Per Diode) Figure 4. MBRF10150CTTypical Reverse Current (Per Diode)
Figure 5. MBRF10200CTTypical Reverse Current (Per Diode) Figure 6. MBRF10100CT Typical Forward Voltage (Per Diode)
Number: DB-150
March 2010, Revision D
Page 3
TAK CHEONG ®
SEMICONDUCTOR
TO220FP SINGLE GAUGE PACKAGE OUTLINE
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
A1 2.7 3.3 0.106 0.130
A2 15.0 15.7 0.591 0.618
A4 6.2 6.6 0.244 0.260
b 0.5 0.9 0.020 0.035
b1 0.9 1.2 0.035 0.047
b2 1.0 1.2 0.039 0.047
c 0.4 0.6 0.016 0.024
D 9.8 10.3 0.386 0.406
e 2.34 2.74 0.092 0.108
E 4.3 4.6 0.169 0.181
E1 2.5 2.9 0.098 0.114
F 2.6 3.0 0.102 0.118
L 10.3 10.7 0.406 0.421
ØP 3.0 3.4 0.118 0.134
Q 2.3 2.7 0.091 0.106
0.01
0.1
1
10
0 0.2 0.4 0.6 0.8 1
VF - In st an t aneo u s Fo rward V ol t age [V]
I F - F o rward Current [A]
Ta=75
Ta=125
Ta=150
Ta=25
0.01
0.1
1
10
0 0.2 0.4 0.6 0.8 1
VF - Instantaneous Forward Voltage [V]
I F - Fo rward Cu rrent [ A]
Ta=75
Ta=125
Ta=150
Ta=25
Figure 7. MBRF10150CT Typical Forward Voltage (Per Diode) Figure 8. MBRF10200CT Typical Forward Voltage (Per Diode)
Number: DB-100
April 14, 2 008 / A
DISCLAIMER NOTICE
TAK CHEONG ®
NOTICE
The information presented in this document is for reference only. Tak Cheong reserves the right to make
changes without notice for the specification of the products displayed herein.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not
designed to be used with equipment or devices which require high level of reliability and the malfunctio n of with
would directly endanger human life (such as medical instruments, transportation equipment, aerospace
machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor
Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such
improper use of sale.
This publication supersedes & replaces all information re viously supplied. For additio nal information , please visit
our website http://www.takcheong.com, o r consu lt your ne ares t Tak Cheong’s sales off ic e for further assis t anc e.