
HIGH SPEED SILICON SWITCHING DIODE IN914
B
IN916
250mW
DO- 35
Glass Axial Packa
e
FEATURES
Intended for General Purpose Application.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL VALUE UNIT
Reverses Voltage ( Continuous) VR75 V
Repetitive Peak Reverse Voltage VRRM 100 V
Average Forward Current
TA =25ºC IF
AV
75 mA
TA =150ºC IF
AV
10 mA
Forward Current (D.C.) IF75 mA
Repetitive Peak Forward Current IFRM 225 mA
Non Repetitive Peak Surge Current
tp=1sec IFSM 500 mA
Power Dissipation Ptot 250 mW
Storage Temperature Tst
-65 to +200 ºC
Operating ambient Temperature Tamb -65 to +175 ºC
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT
Forward Voltage VF
IN914/916 IF=10 1.0 V
1N914B IF=100mA, 1.0 V
IF=5mA, 0.62 0.72 V
Reverse Breakdown Voltage V
BR
RIR=100µA100 V
Reverse CurrentIRVR= 20V 25 nΑ
VR= 75V 5µA
VR= 20V, T
=150ºC
Diode Capacitance CdVR=0, f=1MHz 2.5 pF
Reverse Recovery Time trr IF=10mA to IR=10mA 8ns
RL=100 Ω
Measured at IR=1mA
IF=10mA to IR=60mA 4ns
RL=100 Ω
Measured at IR=1mA
Transys
Electronics
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M
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