DM2G100SH6N Sep. 2008 High Power Lugged Type IGBT Module Description Equivalent Circuit and Package DAWIN'S IGBT module devices are optim ized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and other applications where switching losses are significant portion of the total losses. Equivalent Circuit 6 7 Features 5 4 High Speed Switching BVCES = 600V Low Conduction Loss : VCE(sat) = 2.1 V (typ.) Fast & Soft Anti-Parallel FWD Short circuit rated : Min.10uS at TC=100 Reduced EMI and RFI Isolation Type Package Package : 7DM-1 Series Applications Motor Drives, High Power Inverters, Welding Machine, Induction Heating, UPS , CVCF, Robotics , Servo Controls, High Speed SMPS Please see the package out line information Absolute Maximum Ratings @ Tj=25(Per Leg) Symbol Parameter Conditions Ratings Unit VCES Collector-Emitter Voltage - 600 V VGES Gate-Emitter Voltage - 20 V IC Collector Current TC = 25 125 A TC = 75 100 A - 150 A ICM (1) Pulsed Collector Current IF Diode Continuous Forward Current TC = 100 100 A IFM Diode Maximum Forward Current - 200 A TSC Short Circuit Withstand Time TC = 100 10 uS PD Maximum Power Dissipation TC = 25 450 W Tj Operating Junction Temperature - -40 ~ 150 Tstg Storage Temperature Range - -40 ~ 125 Viso Isolation Voltage AC 1 minute 2500 V Mounting screw Torque :M6 - 4.0 N.m Power terminals screw Torque :M5 - 2.0 N.m Copyright@Dawin Electronics Corp. All right reserved 1/7 DM2G100SH6N Sep. 2008 Electrical Characteristics of IGBT @ TC=25 (unless otherwise specified) Values Symbol Parameter Conditions BVCES C - E Breakdown Voltage VGE = 0V , IC =250uA BVCES/ Temperature Coeff. of TJ Breakdown Voltage VGE(th) Unit Typ. Max. 600 - - V VGE = 0V , IC = 1.0mA - 0.6 - V/ G - E threshold voltage IC = 500uA , VCE = VGE 5 - 8.5 V ICES Collector cutoff Current VCE = 600V , VGE = 0V - - 250 uA IGES G - E leakage Current VGE =20V - - 100 nA VCE(sat) Collector to Emitter IC= 100A, VGE= 15V @TC= 25 - 2.1 2.8 V saturation voltage IC= 100A, VGE= 15V @TC= 100 - 2.4 - V Cies Input capacitance VGE = 0V , f = 1 - 10000 - pF Coes Output capacitance VCE = 30V - 950 - pF Cres Reverse transfer capacitance - 230 - pF td(on) Turn on delay tim e VCC = 300V , IC = 100A - 25 - nS Turn on rise time VGE = 15V - 50 - nS Turn off delay tim e RG = 2.4 - 80 - nS Turn off fall time Inductive Load - 110 200 nS tr td(off) tf Min. Eon Turn on Switching Loss - 1.7 - mJ Eoff Turn off Switching Loss - 4.5 - mJ Ets Total Switching Loss - 6.2 - mJ Tsc Short Circuit Withstand Time 10 - - uS Vcc = 300V, VGE = 15V, RG = 2.4 @TC = 100 Qg Total Gate Charge Vcc = 300V - 400 510 nC Qge Gate-Emitter Charge VGE = 15V - 76 125 nC Qgc Gate-Collector Charge IC = 100A - 175 260 nC Copyright@Dawin Electronics Corp. All right reserved 2/7 DM2G100SH6N Sep. 2008 Electrical Characteristics of FRD @ TC=25 (unless otherwise specified) Symbol VFM trr Irr Qrr Parameter Values Conditions Diode Forward Voltage IF=100A Min. Typ. Max. Tc =25 - 1.6 2.0 Tc =100 - 1.5 - 120 - Diode Reverse IF=100A, VR=300V Tc =25 - Recovery Tim e di/dt= -200A/uS Tc =100 - 130 - Diode Peak Reverse Tc =25 - 7.5 - Recovery Current Tc =100 - 9 - Diode Reverse Tc =25 - 450 - Recovery Charge Tc =100 - Unit V nS A nC 585 - Thermal Characteristics and Weight Values Symbol Parameter Conditions Min. Typ. Max. Unit RJC Junction-to-Case(IGBT Part, Per 1/2 Module) - - 0.26 /W RJC Junction-to-Case(DIODE Part, Per 1/2 Module) - - 0.6 /W RCS Case-to-Sink ( Conductive grease applied) 0.05 - - /W Weight Weight of Module - - 200 g Copyright@Dawin Electronics Corp. All right reserved 3/7 DM2G100SH6N Sep. 2008 Performance Curves 210 Collector Current, IC [A] 240 Common Emitter TC=25 180 20V 150 15V 120 Common Emitter TC=125 210 12V Collector Current, IC [A] 240 V GE = 10V 90 60 30 0 180 20V 150 90 60 30 1 2 3 4 5 6 7 8 0 Collector - Emitter Voltage, VCE [V] 1 2 3 4 5 6 7 Fig 2. Typical Output characteristics 300 120 250 100 200 T C=25 T C=125 150 100 50 80 60 40 Duty cycle = 50% TC=125 Power Dissipation = 130W 20 0 0 0 1 2 3 4 5 8 Collector - Emitter Voltage, VCE [V] Fig 1. Typical Output characteristics Load Current [A] Collector Current, IC [A] V GE = 10V 15V 120 0 0 0.1 6 1 Collector - Emitter Voltage, VCE [V] 10 100 1000 Frequency [KHz] Fig 3. Typical Output characteristics Fig 4. Load Current vs. Frequency 20 20 Common Emitter TC=25 Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, VCE [V] 12V 16 12 8 IC=50A 200A 100A 4 0 0 4 8 12 16 20 Gate - Emitter Voltage, VGE [V] Common Emitter TC=125 16 12 100A 8 200A 4 IC=50A 0 0 4 8 12 16 Gate - Emitter Voltage, VGE [V] Fig 5. Typical Saturation Voltage vs. V GE Fig 6. Typical Saturation Voltage vs. V GE Copyright@Dawin Electronics Corp. All right reserved 4/7 20 DM2G100SH6N Sep. 2008 16000 Common CommonEmitter Emitter f=1MHZ VVGE=0V, GE=0V, f=1MHZ TTC=25 =25 Cies 15 Gate-Emitter Voltage ,VGE [V] 14000 C Capacitance [pF] 12000 Cies 10000 8000 6000 Coes Coes 4000 Cres 2000 Cres 12 300V 9 TBD 6 VCC = 100V 3 0 1 10 100 200 Collector Current, IC [A] 1000 0 .1 0 .01 IGBT : DIODE : TC=25 1.E-04 1.E-03 1 .E-0 2 1 .E-0 1 100 10 Single Non-repetitive Pulse T jj125 VGE GE = 15V RGG = 18 2.4 1 1.E+00 0 1.E+01 100 Rectangular Pulse Duration [sec] 200 300 400 500 Collector Current ,Ic [ A ] 150 1000 800 600 400 200 0 200 300 400 500 700 Collector-Emitter Voltage, VCE [V] 1200 100 600 Fig 10. RBSOA Characteristic Fig 9. Transient Thermal Impedance 0 500 Fig 8. Gate Charge Characteristics 1 Thermal Response Zthjc [/W] 400 Gate Charge, Qg [nc] Fig 7. Capacitance characteristics Collector Current, IC [A] 300 100 Collector - Emitter Voltage, VCE [V] 0.001 1.E-05 200V 0 0 0.1 Common Emitter RL = 2.4 TC = 25 600 TJ 150 VGE 15V 120 90 60 30 0 700 0 20 40 60 80 100 120 140 160 Case Temperature, Tc [ ] Collector-Emitter Voltage, VCE [V] Fig 12. rated Current vs. Case Temperature Fig 11. SCSOA Characteristic Copyright@Dawin Electronics Corp. All right reserved 5/7 DM2G100SH6N Sep. 2008 500 TJ 150 VGE 15V 500 Collector Current, IC [A] Power Dissipation ,PD [ W ] 600 400 300 200 100 0 0 20 40 60 80 100 120 140 100 Case Temperature, Tc [ ] 1ms 10 1 DC Operation Single Non-repetitive Pulse Tc = 25 Curves must be derated linerarly with increase In temperature 1 Fig14. SOA characteristics Forward Current, IF [A] 300 T C=25 T C=125 T C=125 T C=25 100 0 0 1 2 3 10 100 Collector-Emitter Voltage, VCE [V] Fig 13. Power Dissipation vs. Case Temperature 200 50us 100us 0.1 0.1 160 Ic MAX. (Pulsed) Ic MAX. (Continuous) 4 Forward Drop Voltage, VF [V] Fig 15. Forward characteristics Copyright@Dawin Electronics Corp. All right reserved 6/7 1000 DM2G100SH6N Sep. 2008 Package Out Line Information 7DM-1 930.3 M5 DP9 Dimensions in mm 800.3 230.5 10.05 LABEL PLATE 50.3 18.50.2 120.2 350.5 120.5 2.80.05 900.5 320.5 Copyright@Dawin Electronics Corp. All right reserved 7/7 6.10.5 15.50.2 16.50.2 5 4 40.3 170.5 60.2 D W 3 220.5 9.80.2 1 Bolt Depth 6 7 14.50.3 350.5 2 40.3 6. 4 0. 2 Mounting Hole MAX 31 230.5