2SD1314
2006-11-21
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor)
2SD1314
High Power Switching Applications
Motor Control Applications
High DC current gain: hFE = 100 (min) (VCE = 5 V, IC = 15 A)
Low saturation voltage: VCE (sat) = 2 V (max) (IC = 15 A, IB = 0.4 A)
High speed: tf = 3 μs (max) (IC = 15 A)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 600 V
Collector-emitter voltage VCEO 450 V
Emitter-base voltage VEBO 6 V
DC IC 15
Collector current
Pulse ICP 30
A
Base current IB 1.0 A
Collector power dissipation PC 150 W
Junction temperature Tj 150 °C
Storage temperature range Tstg 55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Unit: mm
JEDEC
JEITA
TOSHIBA 2-21F1A
Weight: 9.75 g (typ.)
BASE
EMITTER
300
100
COLLECTOR
2SD1314
2006-11-21
2
Electrical Characteristics (Tc = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = 600 V, IE = 0 1.0 mA
Emitter cut-off current IEBO V
EB = 6 V, IC = 0 200 mA
Collector-emitter sustaining voltage VCEO (SUS) IC = 0.5 A, L = 40 mH 450 V
DC current gain hFE V
CE = 5 V, IC = 15 A 100
Collector-emitter saturation voltage VCE (sat) 2.0 V
Base-emitter saturation voltage VBE (sat)
IC = 15 A, IB = 0.4 A
2.5 V
Collector output capacitance Cob V
CB = 50 V, IE = 0, f = 1 MHz 150 pF
Turn-on time ton 1.0
Storage time tstg 12
Switching time
Fall time tf
IB1 = IB2 = 0.4 A, duty cycle = 0.5%
3.0
μs
Marking
IB1
50 μs
IB2
VCC = 300 V
Output
20
IB2
IB1
Input
0
2SD1314
TOSHIBA
JAPAN
Lot No.
A
line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
2SD1314
2006-11-21
3
Collector current IC (A)
VCE – IC
Collector-emitter voltage VCE (V)
Collector current IC (A)
VCE – IC
Collector-emitter voltage VCE (V)
Collector current IC (A)
Switching time – IC
Switching time (μs)
Collector current IC (A)
VCE – IC
Collector-emitter voltage VCE (V)
hFE – IC
DC current gain hFE
Collector current IC (A)
Collector current IC (A)
Base-emitter saturation voltage
V
BE (sat) (V)
VBE (sat) – IC
0.5
0
100
15
Common emitter
Tc = 25°C
IB = 0.05 A
0.2
0.1
0.6
0.4
1.0
PC = 150 W
5 10 20 25 30 35
1
3
5
10
30
50
300
500
0.5
0
100
15
Common emitter
Tc = 100°C
IB = 0.05 A
0.2
0.1
0.6
0.4
1.0
PC = 60 W
5 10 20 25 30 35
1
3
5
10
30
50
300
500
Tc = 100°C
25
40
Common emitter
VCE = 5 V
30
10
0.1
2000
0.3 1 3 10
30
50
100
300
500
1000
Common emitter
IB = 0.4 A
Tc = 40°C
25
100
0.3
0.1
30
30
0.3 1 3 10
0.5
1
3
5
10
Common emitter
VCC = 300 V
IB = ±0.4 A
Tc = 25°C
0.1
0
16
100
2 4 6 8 10 12 14
0.3
0.5
1
3
5
10
30
50
tstg
tf
ton
0.5
0
100
15
Common
emitter
Tc = 40°C
IB = 0.05 A
0.2
0.1
0.6
0.4
1.0
PC = 150 W
5 10 20 25 30 35
1
3
5
10
30
50
300
500
2SD1314
2006-11-21
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Collector-emitter voltage VCE (V)
Safe Operating Area
Collector current IC (A)
30 100
0.1
3
50
0.5
1
3
5
10
*: Single nonrepetitive pulse
Tc = 2 5 ° C
Curves must be derated
linearly with increase in
temperature.
IC max
(
continuous
)
IC max (pulsed)*
VCEO max
1 ms*
100 μs*
DC operation
Tc = 25°C
300 10
30
0.3
500 μs*
10 ms*
50 μs*
2SD1314
2006-11-21
5
RESTRICTIONS ON PRODUCT USE 20070701-EN
The information contained herein is subject to change without notice.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
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document shall be made at the customer’s own risk.
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
The information contained herein is presented only as a guide for the applications of our products. No
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occurring as a result of noncompliance with applicable laws and regulations.