MMBT3904-G (NPN)
RoHS Device
General Purpose TransistorGeneral Purpose Transistor
QW-BTR01 Page 1
REV:A
SMD Diodes Specialist
O
Maximum Ratings(at TA=25 C unless otherwise noted)
Symbol
Parameter Conditions Min
Max
Unit
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
Typ
VCEO
Emitter-Base voltage
Collector-Emitter voltage
Collector-Base voltage
Collector current-Continuous
Symbol
Parameter Min
Max
Unit
V
V
V
6
40
60
IC0.2 A
0.2 W
PC
Col lec tor dissipa tioin
+150 OC
TSTG , TJ
Storage tempe rat ur e an d jun ction tempe rat ur e -55
Collector-Base breakdown voltage
0.1
IC =100μA , IE=0
Features
-Epitaxial planar die construction
-As complementary type, the PNP
transistor MMBT3906-G is recommended
Dimensions in inches and (millimeter)
SOT-23
0.066 (1.70)
1 2
3
0.119 (3.00)
0.110 (2.80)
0.103 (2.60)
0.086 (2.20)
0.020 (0.50)
0.013 (0.35)
0.056 (1.40)
0.047 (1.20)
0.044 (1.10)
0.083 (2.10)
0.007 (0.20) min
0.006 (0.15) max
0.006 (0.15)
0.002 (0.05)
1
Base
2
Emitter
Collector
3
VCBO
VEBO
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Base-Emitter saturation voltage
Collector-Emitter saturation voltage
Transition frequency
Delay time
Storage time
Rise time
Fall time
IC =1mA , IB=0
IE =100μA , IC=0
VCB=60V , IE=0
VCE=40V , IB=0
VEB=5V , IC=0
VCE=1V , IC=10mA
VCE=1V , IC=50mA
IC=50mA , IB=5mA
IC=50mA , IB=5mA
VCE=20V , IC=10mA
f=100MHZ
VCC=3.0Vdc , VBE=-0.5Vdc
IC=10mAdc , IB1=1.0mAdc
VCC=3.0Vdc , IC=10mAdc
IB1=IB2=1.0mAdc
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
td
tr
ts
tf
40
60
6
0.1
0.1
300
100
60
0.3
0.95
250
35
35
200
50
V
V
V
µA
µA
µA
V
V
Mhz
nS
nS
nS
nS
RATING AND CHARACTERISTIC CURVES (MMBT3904-G)
General Purpose TransistorGeneral Purpose Transistor
Page 2
QW-BTR01
REV:A
SMD Diodes Specialist
Fig.1 Typical pulsed current gain
V.S. Collector current
400
300
200
100
0
hFE- Typical pulsed current gain
Ic- Collector current (mA)
0.1 1 10 100
VCE=5V
o
125 C
o
125 C
o
125 C
o
125 C
o
125 C
o
125 C
o
125 C
o
25 C
o
125 C
o
125 C
o
125 C
o
-40 C
500
Fig.2 Collector-Emitter saturation
voltage V.S. Collector current
0.10
0.05
VCE(sat)- Collector-Emitter voltage(V)
Ic- Collector current (mA)
0.1 1 10 100
0.15
ß=10
o
-40 C
o
125 C
o
25 C
100
Fig.3 Base-Emitter saturatioin
voltage V.S. Collector current
Ic - Collector current (mA)
0.1 1 10
0.4
0.6
0.8
1
EB ) Bs-e i o ta V
V(sat-aemtter v l ge( )
o
125 C
ß=10
o
-40 C
o
25 C
100
Fig.4 Base-Emitter ON voltage
V.S. Collector current
Ic - Collector current (mA)
0.1 1 10
0.4
0.6
0.8
1
BE ON a t e ( )
V()- B se-emiter voltag V
0.2
VCE=5V
o
125 C
o
125 C
o
125 C
o
125 C
o
125 C
o
125 C
o
125 C
o
25 C
o
125 C
o
125 C
o
125 C
o
-40 C
ICBO- Collector current (nA)
25 50 75
10
500
100
1
0.1
100
Fig.5 Collector-cutoff current V.S.
Ambient temperature
o
TA- Ambient temperature ( C)
125 150
VCB=30V
Fig.6 Capacitance V.S. Reverse
bias voltage
1
2
3
4
5
10
Capacitance (pF)
0.1 1 10 100
Reverse bias voltage (V)
Cobo
f=1.0MHz
Cibo