EEPROMEEPROM
EEPROMEEPROM
EEPROM
AS28C010
AS28C010
Rev. 1.5 5/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
Austin Semiconductor, Inc.
For more products and information
please visit our web site at
www.austinsemiconductor.com
128K x 8 EEPROM
EEPROM Memory
5 Volt, Byte Alterable
AV AILABLE AS MILITARY
SPECIFICATIONS
z SMD 5962-38267
z MIL-PRF-38535
FEATURES
z Access speed: 120, 150, 200, and 250ns
z Data Retention: 100 Y ears
z Low power , active current: 50mA, standby current: 500uA
z Single +5V (+10%) power supply
z Data Polling and Toggle
z Erase/W rite Endurance (10,000 byte mode / 100,000 page
mode)
z Software Data protection Algorithm
zAutomatic , Self-Timed Byte W rite
z Automatic Programming:
Automatic Page W rite: 10ms (MAX)
OPTIONS MARKINGS
z Timing
120ns access -12
150ns access -15
200ns access -20
250ns access -25
z Packages
Ceramic Flat Pack F
CerDIP, 600 mil CW
z Operating T emperature Ranges
-Military (-55oC to +125oC) XT
-Industrial (-40oC to +85oC) IT
-Full Military Class M Processing 883C
*NOTE: Package lid is connected to ground (Vss).
GENERAL DESCRIPTION
The Austin Semiconductor, Inc. AS28C010 is a 1 Megabit CMOS
Electrically Erasable Programmable Read Only Memory (EEPROM)
organized as 131, 072 x 8 bits. The AS28C010 is capable of in system
electrical Byte and Page reprogrammability .
The AS28C010 achieves high speed access, low power
consumption, and a high level of reliability by employing advanced
CMOS process and circuitry technology.
This device has a 256-Byte Page Programming function to make its
erase and write operations faster. The AS28C010 features Data
Polling and a toggle signal to indicate completion of erase and program-
ming operations.
This EEPROM provides several levels of data protection., in
addition to noise protection on the WE signal and write inhibit during
power on and off. Software data protection is implemented using
JEDEC Optional Standard
algorithm.
The AS28C010 is designed for high reliability in the most
demanding applications. Data retention is specified for 100 years and
erase/write endurance is guaranteed to a minimum of 100,000 cycles in
the Page Mode and 10,000 cycles in the Byte Mode.
PIN ASSIGNMENT
(T op View)
32-Pin CFP (F), 32-Pin CerDIP (CW)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O 0
I/O 1
I/O 2
Vss
Vcc
WE\
NC
A14
A13
A8
A9
A11
OE\
A10
CE\
I/O 7
I/O 6
I/O 5
I/O 4
I/O 3
EEPROMEEPROM
EEPROMEEPROM
EEPROM
AS28C010
AS28C010
Rev. 1.5 5/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
Austin Semiconductor, Inc.
FUNCTIONAL BLOCK DIAGRAM
EEPROMEEPROM
EEPROMEEPROM
EEPROM
AS28C010
AS28C010
Rev. 1.5 5/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
Austin Semiconductor, Inc.
FUNCTIONAL DESCRIPTION
READ
Read operations are initiated by both OE\ and CE\ LOW.
The read operation is terminated by either CE\ or OE\ returning
HIGH. This two line control architecture eliminates bus
contention in a system environment. The data bus will be in a
high impedance state when either OE\ or CE\ is HIGH.
WRITE
W rite operations are initiated when both CE\ and WE\ are
LOW and OE\ is HIGH. The AS28C010 supports both a CE\
and WE\ controlled write cycle. That is, the address is latched
by the falling edge of either CE\ or WE\, whichever occurs last.
Similarly, the data is latched internally by the rising edge of
either CE\ or WE\, whichever occurs first. A byte write
operation, once initiated, will automatically continue to
completion, typically within 5ms.
PAGE WRITE
The page write feature of the AS28C010 allows the entire
memory to be written in 5 seconds. Page write allows two to
two hundred fifty-six bytes of data to be consecutively written
to the AS28C010 prior to the commencement of the internal
programming cycle. The host can fetch data from another
device within the system during a page write operation (change
the source address), but the page address (A8 through A16)
for each subsequent valid write cycle to the part during this
operation must be the same as the initial page address.
The page write mode can be initiated during any write
operation. Following the initial byte write cycle, the host can
write an additional one to two hundred fifty six bytes in the
same manner as the first byte was written. Each successive
byte load cycle, started by the WE\ HIGH to LOW transition,
must begin within 100µs of the falling edge of the preceding
WE\. If a subsequent WE\ HIGH to LOW transition is not
detected within 100µs, the internal automatic programming cycle
will commence. There is no page write window limitation.
Effectively the page write window is infinitely wide, so long as
the host continues to access the device within the byte load
cycle time of 100µs.
WRITE
The AS28C010 provides the user two write operation
status bits. These can be used to optimize a system write cycle
time. The status bits are mapped onto the I/O bus as shown in
Figure 1.
Figure 1: S tatus Bit Assignment
DA T A\ POLLING
The AS28C010 features DATA\ Polling as a method to
indicate to the host system that the byte write or page write
cycle has completed. DATA\ Polling allows a simple bit test
operation to determine the status of the AS28C010, eliminating
additional interrupt inputs or external hardware. During the
internal programming cycle, any attempt to
read the last byte written will produce the complement of that
data on I/O7 (i.e., write data = 0xxx xxxx, read data = 1xxx xxxx).
Once the programming cycle is complete, I/O7 will reflect true
data. Note: If the AS28C010 is in the protected state and an
illegal write operation is attempted DATA\ Polling will not
operate.
TOGGLE BIT
The AS28C010 also provides another method for
determining when the internal write cycle is complete. During
the internal programming cycle, I/O6 will toggle from HIGH to
LOW and LOW to HIGH on subsequent attempts to read the
device. When the internal cycle is complete the toggling will
cease and the device will be accessible for additional read or
write operations.
04321I/O DP TB 5
RESERVED
TOGGLE BIT
DATA\ POLLING
EEPROMEEPROM
EEPROMEEPROM
EEPROM
AS28C010
AS28C010
Rev. 1.5 5/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
Austin Semiconductor, Inc.
ABSOLUTE MAXIMUM RA TINGS*
Voltage on Vcc Supply Relative to Vss................-0.5V to +7.0V1
Voltage on any pin Relative to Vss.......................-0.6V to +7.0V1
Storage T emperature ............................................-65°C to +150°C
Operating Temperature Range.............................-55oC to +125oC
Soldering Temperature Range...............................................260oC
Maximum Junction T emperature**....................................+150°C
Power Dissipation...................................................................1.0W
*Stresses greater than those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the
operation section of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods
may affect reliability .
** Junction temperature depends upon package type, cycle
time, loading, ambient temperature and airflow .
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55oC < TA < 125oC; Vcc = 5V +10%)
PARAMETE
R
CONDITION SYMBOL MIN MA
X
UNITS
In
p
ut Hi
g
h
(
Lo
g
ic 1
)
Volta
g
e1VIH 2.0 VCC + 1.0V V
In
p
ut Low
(
Lo
g
ic 0
)
Volta
ge
1VIL -1.0 0.8 V
Input Leakage Current VIN = VSS to VCC ILI 10 P$
Output Leakage Current VOUT =VSS to Vcc, CE\=VIH ILO 10 P$
Output High Voltage IOH = -400
P
A
VOH 2.4 V
Output Low Voltage IOL = 2.1 mA VOL 0.4 V
Notes: 1) VIL min. and VIH max. are for reference only and are not tested.
MAX
PARAMETER CONDITIONS SYM -12 -15 -20 -25 UNITS NOTES
Power Supply Current:
Operating
IOUT=OmA, Vcc = 5.5V
Cycle=MIN ICC3 100 100 80 80 mA
Power Supply Current:
Standby
CE\=Vcc, Vcc = 5.5V ICC1 500 500 500 500 PA
CE\=VIH, Vcc = 5.5V ICC2 3333mA
EEPROMEEPROM
EEPROMEEPROM
EEPROM
AS28C010
AS28C010
Rev. 1.5 5/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
Austin Semiconductor, Inc.
MODE SELECTION
MODE CE
\
OE
\
WE\ I/O
READ V
IL
V
IL
V
IH
D
OUT
STANDBY V
IH
X X High-Z
WRITE V
IL
V
IH
V
IL
D
IN
DESELECT V
IL
V
IH
V
IH
High-Z
XX
V
IH
---
XV
IL
X ---
DATA
POLLING V
IL
V
IL
V
IH
Data Out
(I/O7)
WRITE
INHIBIT
Paramete
r
Min. Max. Units
Endurance 10,000 Cycles Per Byte
Endurance 100,000 Cycles Per Page
Data Retention 100 Years
ENDURANCE AND DATA RETENTION
Symbol Paramete
r
Max. Units
tPUR
(2) Power-up to Read Operation 100
P
s
tPUW
(2) Power-up to Write Operation 5 ms
POWER-UP TIMING
Input Pulse Levels 0V to 3V
Input Rise and Fall Times 10ns
Input and Output Timing Levels 1.5V
A.C. CONDITIONS OF TEST
CAPACITANCE TA=+25oC, f= 1MHZ, VCC=5V
PARAMETE
R
SYMBOL MA
X
UNITS Test Conditions
Input Capacitance C
IN
(2)
10 pF V
IN
=0V
Input / Output Capactiance C
I/O
(2)
10 pF V
I/O
=0V
EQUIVALENT A.C. LOAD CURRENT SYMBOL TABLE
Notes: (2) This parameter is periodically sampled and not 100% tested.
EEPROMEEPROM
EEPROMEEPROM
EEPROM
AS28C010
AS28C010
Rev. 1.5 5/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
6
Austin Semiconductor, Inc.
AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION
(-55oC < TC < 125oC; Vcc = 5V +10%)
T est Conditions
z Input Pulse Levels: 0.0V to 3.0V
z Input rise and fall times: < 20ns
z Output Load: 1 TTL Gate +100pF (including scope and jig)
z Reference levels for measuring timing: 1.5V , 1.5V
MIN MA
X
MIN MA
X
MIN MA
X
MIN MA
X
t
RC
Read Cycle Time 120 150 200 250 ns
t
CE
Chip Enable Access Time 120 150 200 250 ns
t
AA
Address Access Time 120 150 200 250 ns
t
OE
Output Enable Access Time 50 50 50 50 ns
t
LZ
(3)
CE\ LOW to Active Output 0 0 0 0 ns
t
OLZ
(3)
OE\ LOW to Active Output 00 0 0 ns
t
HZ
(3)
CE\ HIGH to High Z Output 50 50 50 50 ns
t
OHZ
(3)
OE\ HIGH to High Z Output 50 50 50 50 ns
t
OH
Output Hold from Address Change 0 0 0 0 ns
Symbol UNITSParameter -20 -15 -25
-12
AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATIONS
SYMBOL PARAMETER MIN MAX UNITS
t
WC
Write Cycle Time 10 ms
t
AS
Address Setup Time 0ns
t
AH
Address Hold Time 50 ns
tcs Write Setup Time 0ns
t
CH
Write Hold Time 0ns
t
CW
CE\ Pulse Width 100 ns
t
OES
OE\ HIGH Setup Time 10 ns
t
OEH
OE\ HIGH Hold Time 10 ns
t
WP
WE\ Pulse Width 100 ns
t
WPH
WE\ HIGH Recovery 100 ns
t
DV
Data Valid 1
P
s
t
DS
Data Setup 50 ns
t
DH
Data Hold 0ns
t
DW
Delay to Next Write 10
P
s
t
BLC
Byte Load Cycle 0.20 100
P
s
Notes: 3) tLZ min., tOLZ min., and tOHZ are periodically sampled and not 100% tested. tHZ max. and tOHZ max. are measured,
with CL=5pF , from the point when CE\ or OE\ return HIGH (whichever occurs first) to the time when the
outputs are no longer driven.
EEPROMEEPROM
EEPROMEEPROM
EEPROM
AS28C010
AS28C010
Rev. 1.5 5/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
7
Austin Semiconductor, Inc.
SOFTWARE DATA PROTECTION TIMING WAVEFORM (protection mode)
tWC
tBLC
{
Write Address
W rite Data
5555
A0
AAAA
or
2AAA
55
5555
AA
Address
Data
Vcc
CE\
WE\
SOFTWARE DATA PROTECTION TIMING WAVEFORM (non-protection mode)
tWC
5555
80
AAAA
or
2AAA
55
5555
AA
Address
Data
Vcc
CE\
WE\
Normal active
mode
5555
AA 5555
20
AAAA
or
2AAA
55
tRC
ADDRESS
tCE
CE\
OE\
WE\
DATA VALID
DATA I/O DATA VALID
tOE
VIH
HIGH Z
tOLZ
tLE tOH
tAA
tHZ
tOHZ
READ CYCLE
EEPROMEEPROM
EEPROMEEPROM
EEPROM
AS28C010
AS28C010
Rev. 1.5 5/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
8
Austin Semiconductor, Inc.
ADDRESS
CE\
OE\
WE\
DATA VALID
DATA IN
HIGH Z
DATA OUT
tWC
tAS tAH
tCS tCH
tOES
tWP
tOEH
tDV tWPH
tDS tDH
ADDRESS
CE\
OE\
WE\
DATA VALID
DATA IN
HIGH Z
DATA OUT
tWC
tAS tAH
tOES
tOEH
tDV
tWPH
tDS tDH
tCW
tCS tCH
WE\ CONTROLLED WRITE CYCLE
CE\ CONTROLLED WRITE CYCLE
EEPROMEEPROM
EEPROMEEPROM
EEPROM
AS28C010
AS28C010
Rev. 1.5 5/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
9
Austin Semiconductor, Inc.
EEPROMEEPROM
EEPROMEEPROM
EEPROM
AS28C010
AS28C010
Rev. 1.5 5/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
10
Austin Semiconductor, Inc.
OE\*
CE\
WE\
ADDRESS **
I/O
BYTE 0 BYTE 1 BYTE 2 BYTE n BYTE n+1 BYTE n+2
LAST BYTE
t
WPH
t
WP
t
BLC
* Between successive byte writes within a page write operation, OE\ can bee strobed LOW: e.g. this can be done with CE\ and WE\
HIGH to fetch data from another memory device within the system for the next write; or with WE\ HIGH and CE\ LOW effectively
performing a polling operation.
**: 1- For each successive write within the page write operation A
8
-A
16
should be the same or writes to an unknown address could occur.
2– The timings shown above are unique to page write operations. Individual byte load operations within the page write must conform
to either CE\ or WE\ controlled write cycle timing.
P AGE WRITE CYCLE
EEPROMEEPROM
EEPROMEEPROM
EEPROM
AS28C010
AS28C010
Rev. 1.5 5/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
11
Austin Semiconductor, Inc.
*All measurements are in inches.
ASI Case #306 (Package Designator F)
SMD 5962-38267, Case Outline M
MECHANICAL DEFINITIONS*
MIN
MAX
A 0.097 0.123
A1 0.090 0.110
b 0.015 0.019
c 0.003 0.007
D 0.810 0.830
D2 0.745 0.755
E 0.425 0.445
E1 0.330 0.356
e 0.045 0.055
H 1.000 1.100
L 0.290 0.310
Q 0.026 0.037
SYMBOL SMD SPECIFICATIONS
NOTE: All drawings are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits.
D
E
L
e
b
T op View
H
c
E1
A
Q
D2
A1
EEPROMEEPROM
EEPROMEEPROM
EEPROM
AS28C010
AS28C010
Rev. 1.5 5/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
12
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
*All measurements are in inches.
Symbol Min Max Note Symbol Min Max Note
A --- .225 eA/2
b .014 .026 2 L .125 .200 8
b1 .014 .023 3 Q .015 .070 9
b2 .045 .065 4 Q1
b3 .023 .045 5 S1 .005 --- 10
c .008 .018 2 S2 .005 --- 11
c1 .008 .015 3 a 90O105O
D --- 1.680 6 aaa --- .015
E .510 .620 6 bbb --- .030
E2 ccc --- .010
E3 M --- .0015 2
eN12
e
A
Note
.100 BSC
.600 BSC
.300 BSC
32
1,14
NOTES:
1. Index area: A notch or a pin one identification mark shall be located
adjacent to pin one and shall be located within the shaded area shown.
The manufacturer’s identification shall not be used as a pin one
identification mark.
2. The maximum limits of lead dimensions b and c or M shall be measured
at the centroid of the finished lead surfaces, when solder dip or tin plate
lead finish is applied.
3. Dimensions b1 and c1 apply to lead base metal only. Dimension M applies
to lead plating and finish thickness.
4. The b2 minimum dimension of .045 inch (1.14 mm) was implemented 30
September 1992. Until that date, a minimum dimension of .038 (0.97 mm)
was acceptable. See 5.2.4
5. Corner leads (1, N, N/2, and N/2+1) may be configured as shown in detail
A. For this configuration dimension b3 replaces dimension b2.
6. This dimension allows for off-center lid, meniscus, and glass overrun.
8. Pointed or rounded lead tips as shown in details B and C are preferred to
ease insertion, but are not mandatory.
9. Dimension Q shall be measured from the seating plane to the base plane.
10. Measure dimension S1 at all four corners, see 5.2.5.
11. Measure dimension S2 from the top of the ceramic body to the nearest
metallization or lead
12. N is the maximum number of terminal positions.
14. See tables VI and VII for descriptive type designators.
EEPROMEEPROM
EEPROMEEPROM
EEPROM
AS28C010
AS28C010
Rev. 1.5 5/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
13
Austin Semiconductor, Inc.
ORDERING INFORMATION
EXAMPLE: AS28C010CW-15/883C EXAMPLE: AS28C010F-15/883C
Device Number Package
Type
Speed
ns Process Device Number Package
Type
Speed
ns Process
AS28C010 CW -12
/
* AS28C010 F -12
/
*
AS28C010 CW -15
/
* AS28C010 F -15
/
*
AS28C010 CW -20
/
* AS28C010 F -20
/
*
AS28C010 CW -25
/
* AS28C010 F -25
/
*
*AVAILABLE PROCESSES
IT = Industrial Temperature Range -40oC to +85oC
XT = Extended Temperature Range -55oC to +125oC
883C = Full Military Class M Processing -55oC to +125oC
EEPROMEEPROM
EEPROMEEPROM
EEPROM
AS28C010
AS28C010
Rev. 1.5 5/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
14
Austin Semiconductor, Inc.
ASI TO DSCC PART NUMBER
CROSS REFERENCE*
Package Designator CW
ASI Part # SMD Part#
AS28C010CW-25 5962-3826701MXA
AS28C010CW-20 5962-3826703MXA
AS28C010CW-15 5962-3826705MXA
AS28C010CW-12 5962-3826707MXA
Package Designator F
ASI Part # SMD Part#
AS28C010F-25 5962-3826701MZA
AS28C010F-20 5962-3826703MZA
AS28C010F-15 5962-3826705MZA
AS28C010F-12 5962-3826707MZA
* ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.
