1
Subject to change without notice.
www.cree.com
FEATURES
EZBright Power Chip LED Rf Performance
60 mW min. @ 150 mA – 450 & 460 nm
Lambertian Radiation
Conductive Epoxy, Solder Paste or Preforms,
or Flux Eutectic Attach
Thin 100-μm Chip
Low Forward Voltage – 3.5 V Typical at 150 mA
Single Wire Bond Structure
Maximum DC Forward Current - 200 mA
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APPLICATIONS
General Illumination
Automobile
Aircraft
Decorative Lighting
Task Lighting
Outdoor Illumination
White LEDs
Crosswalk Signals
Backlighting
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Cree® EZ400™ LED
Data Sheet
CxxxEZ400-Sxx000
Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efcient InGaN materials
with Cree’s proprietary optical design and device technology to deliver superior value for high-intensity LEDs. The
optical design maximizes light extraction efciency and enables a Lambertian radiation pattern. Additionally, these
LEDs are die attachable with conductive epoxy, solder paste or solder preforms, as well as the ux eutectic method.
These vertically structured, low forward voltage LED chips are approximately 100 microns in height. Cree’s EZ™ chips
are tested for conformity to optical and electrical specications. These LEDs are useful in a broad range of applications,
such as general illumination, automotive lighting and LCD backlighting.
CxxxEZ400-Sxx000 Chip Diagram
Top View Bottom View
EZBright LED Chip
380 x 380 μm2
t = 100 μm
Backside
Metallization
Gold Bond Pad
100 μm
Die Cross Section
Anode (+);
3 μm AuSn
Cathode (-)
Data Sheet: CPR3DJ Rev. -
Copyright © 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and EZBright, EZ, and EZ400 are trademarks of Cree, Inc.
2CPR3DJ Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Maximum Ratings at TA = 25°C Note 1 CxxxEZ400-Sxx000
DC Forward Current 200 mA
Peak Forward Current 350 mA Note 3
LED Junction Temperature 145°C
Reverse Voltage 5 V
Operating Temperature Range -40°C to +100°C
Storage Temperature Range -40°C to +120°C
Typical Electrical/Optical Characteristics at TA = 25°C, If = 150 mA Note 2
Part Number Forward Voltage (VF, V) Reverse Current
[I(Vr=5 V), μA]
Full Width Half Max
(λD, nm)
Min. Typ. Max. Max. Typ.
C450EZ600-Sxx000 3.1 3.5 4.1 2 21
C460EZ600-Sxx000 3.1 3.5 4.1 2 21
Mechanical Specications CxxxEZ600-Sxx000
Description Dimension Tolerance
P-N Junction Area (µm) 350 x 350 ±40
Chip Area (µm) 380 x 380 ±40
Chip Thickness (µm) 100 ±25
Top Au Bond Pad Diameter (µm) 100 ±15
Au Bond Pad Thickness (µm) 3.0 ±1.0
Back Contact Metal Area (µm) 380 x 380 ±40
Back Contact Metal Thickness (µm) 3.0 ±1.0
Notes:
Maximum ratings are package-dependent. The above ratings were determined using a Au-plated TO39 header without an
encapsulant for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a
specic package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). See Cree
EZBright Applications Note for assembly-process information.
All products conform to the listed minimum and maximum specications for electrical and optical characteristics when assembled
and operated at 150 mA within the maximum ratings shown above. Efciency decreases at higher currents. Typical values
given are within the range of average expected by the manufacturer in large quantities and are provided for information only.
All measurements were made using a Au-plated TO39 header without an encapsulant. Optical characteristics measured in an
integrating sphere using Illuminance E.
This peak forward current specication is based on a 400-ms pulse width at a 1/5-duty cycle with a junction temperature of
65°C.
1.
2.
3.
Copyright © 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and EZBright, EZ, and EZ400 are trademarks of Cree, Inc.
3CPR3DJ Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Standard Bins for CxxxEZ400-Sxx000
LED chips are sorted to the radiant ux and dominant wavelength bins shown. A sorted die sheet contains die from
only one bin. Sorted die kit (CxxxEZ400-Sxx000) orders may be lled with any or all bins (CxxxEZ400-0xxx) contained
in the kit. All radiant ux and all dominant wavelength values shown and specied are at If = 150 mA. Radiant ux
values are measured using Au-plated TO39 headers without an encapsulant.
C450EZ400-S06000
C450EZ400-0213 C450EZ400-0214 C450EZ400-0215 C450EZ400-0216
C450EZ400-0209 C450EZ400-0210 C450EZ400-0211 C450EZ400-0212
C450EZ400-0205 C450EZ400-0206 C450EZ400-0207 C450EZ400-0208
C450EZ400-0201 C450EZ400-0202 C450EZ400-0203 C450EZ400-0204
105 mW
90 mW
75 mW
60 mW
Dominant Wavelength
Radiant Flux
447.5 nm 450 nm 452.5 nm445 nm 455 nm
C460EZ400-S06000
C460EZ400-0213 C460EZ400-0214 C460EZ400-0215 C460EZ400-0216
C460EZ400-0209 C460EZ400-0210 C460EZ400-0211 C460EZ400-0212
C460EZ400-0205 C460EZ400-0206 C460EZ400-0207 C460EZ400-0208
C460EZ400-0201 C460EZ400-0202 C460EZ400-0203 C460EZ400-0204
Dominant Wavelength
Radiant Flux
457.5 nm 460 nm 462.5 nm455 nm 465 nm
105 mW
90 mW
75 mW
60 mW
Copyright © 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and EZBright, EZ, and EZ400 are trademarks of Cree, Inc.
4CPR3DJ Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Characteristic Curves
These are representative measurements for the EZBright400. Actual curves will vary slightly for the various radiant ux
and dominant wavelength bins.
70%
75%
80%
85%
90%
95%
100%
25 50 75 100 125 150
Junction Temperature (°C)
Relative Light Intensity (%)
Relative Light Intensity vs Junction Temperature
Forward Current vs Forward Voltage
0
25
50
75
100
125
150
175
200
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Vf (V)
If (mA)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
25 50 75 100 125 150
Junction Temperature (°C)
Wavelength Shift (nm)
Dominant Wavelength Shift vs Junction Temperature
Relative Intensity vs Forward Current
0
20
40
60
80
100
120
140
0 25 50 75 100 125 150 175 200
If (mA)
% Relative Intensity
Voltage Shift vs Junction Temperature
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
25 50 75 100 125 150
Junction Temperature (°C)
Voltage Shift (V)
-0.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 25 50 75 100 125 150 175 200
If (mA)
Shift (nm)
Dominant Wavelength Shift vs Forward Current
Copyright © 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and EZBright, EZ, and EZ400 are trademarks of Cree, Inc.
5CPR3DJ Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Radiation Pattern
This is a representative radiation pattern for the EZBright Power Chip LED product. Actual patterns will vary slightly for
each chip.