MPS-H54 (SILICON) MPS-H55 PNP SILICON ANNULAR TRANSISTORS ... MPS-H54 is designed for RF amplifier applications in AM receivers. ... MPS-H55 is designed for mixer, oscillator, autodyne converter, and {F amplifier applications in AM receivers. PNP SILICON TRANSISTORS High Breakdown Voltage BVCEO = 80 Vde (Min) @ Low Collector-Base Capacitance Cop = 1.0 pF (Typ) @ Low Output Admittance ~ hoe = 15 umhos (Max) @ Low Noise Figure NF = 2.0 dB (Max) MPS-H54 @ Complement to NPN MPS-H04, MPS-HO5 MAXIMUM RATINGS Rating Symbol Value Unit Collector-E mitter Voltage VcEO 80 Vde Emitter-Base Voltage Ves 4.0 Vde Coltector Current Continuous Ic 100 mAdc Total Power Dissipation @ Ta = 25C PD 350 mw Derate above 25C 28 mw/ec Total Power Dissipation @ Tc = 25C Pp 1.0 Watt Derate above 25C 8.0 mw/c Operating and Storage Junction Ty. Tstg ~55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient | Raja!) 357 cw Therma! Resistance, Junction to Case Resc 125 oom (1) Rg ya is measured with the device soldered into a typical printed circuit board. 1062 } seating b PLANE = S STYLE 1: "| + oa tr q t rc pF | PIN 1, EMITTER a 2. BASE 9 Ge) ob Rb 0-1 3. COLLECTOR CASE 29-02 TO-92 Oo MPS-H54, MPS-H55 (continued) ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted) | Characteristic { Symbol I Min f Typ | Max |. Unit | OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage BVCcEO 80 - - Vde Uc = 1.0 mAdc, tg = 0) Collector-Base Breakdawn Voltage BYVcBO 80 - - Vde {ig = 100 wAde, Ie = 0) : Emitter-Base Breakdown Voltage BVEBO 4.0 - - Vde (ig * 100 pAde, i = 0} Collector Cutoff Current lcpo - - 50 nAdc (Vog = 60 Vac, ie = 0) Emitter Cutoff Current lEBo - - 50 nAdc (Veg = 3.0 Vdc, Ic = 0) ON CHARACTERISTICS OC Current Gain hee - {Ig = 1.5 mAde, Veg = 10 Vdc) MPS-H54 30 70 120 MPS-H55 30 70 150 Callector-Emitter Saturation Voltage VCE (sat) = 0.16 0.25 Vde (ig = 10 mAdc, 1g = 1.0 mAdc) DYNAMIC CHARACTERISTICS Current-GainBandwidth Product fr 80 185 - Maz (lc = 1.5 mAdec, Veg = 10 Vde, f= 100 MHz) Collector-Base Capacitance Cop - 1.0 1.6 pF (Vcp = 10 Vdc, f = 1.0 MHz) Output Admittance hoe - 6.6 15 umhos (l = 1.5 mAdc, Vcg = 10 Vde, f = 1.0 kHz) Noise Figure NF = 1.5 2.0 dB lic = 1.5 mAdc, Vog = 10 Vde, Rg = 50 ohms, f = 1.0 MHz) MPS-H54 FIGURE 1 ~ SIMPLIFIED AC EQUIVALENT CIRCUIT (Common Emitter) BASE th cb COLLECTOR iL if a & aN 1 thre 8 me Vige T fo = Note: Data for MPS-HO4 and MPS-HOS is presented in terms of the equivalent circuit shown in Figure 1. Values for its components may be found or calculated as follows: fp 15 Ohms Cob, See Figure 5 ve = 26 mV/lE Om = tite Qc = (hg + 1) hob (See Figures 3 and 6) 1 Cy = = 0.2 pF Oar ttte o "bc = (hte + 1) re Low frequency h parameters may be found from: hie = "b' + Mb'c hg21.1 hpg (See Figure 2) bre = Negligible hoe = (hfe + 1) Nop y Parameters may be determined from the following calculations: 1+ju (Cg+ Coy) the Yar 7s TT AIR EP " trp +tp'c) tjw (Cet Cop} rp th'c y jw Cob 12= ~ 1 7 th tn jo (Cop + CQ) ry + tbe oc 1 jw C, 21=9m = 5 eb (1+ 2B | +s (Cy # Cob) (1+ Te} + iu (Ce Con) ry Toc Toc th trib: (BAPE siwee (i+ ceo) Th Ibe 22 = go + iwCo ~ dm Yi2t re "bo *loe (Ro +jw (Ce + Cop) "o foc 1063 MPS-H54, MPS-H55 (continued) ft, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz) bre, DC CURRENT GAIN (NORMALIZED) hob, QSUTPUT ADMITTANCE (umhos) ELECTRICAL CHARACTERISTICS (VcE = 10 V, Ta = 25C unless otherwise noted) FIGURE 2 NORMALIZED DC CURRENT GAIN Ta=1 a1 0.2 6.5 1.0 2.0 5.0 Ic, COLLECTOR CURRENT (mAdc) FIGURE 4 CURRENT-GAINBANDWIDTH PRODUCT 300 250 200 150 toa 50 2.0 3.0 40 6.0 7.0 Ic, COLLECTOR CURRENT (mAdc) FIGURE 6 OUTPUT ADMITTANCE 0.7 1.0 2.0 3.0 ig, COLLECTOR CURRENT (mAdc} 1064 FIGURE 3 ON VOLTAGES VpE@ Vce=10V 2S n 2 S V, VOLTAGES (VOLTS) Ss nm a1 02 03 05 7.0 1.0 20 3.0 50 7.0 10.0 Ip, COLLECTOR CURRENT (mAdc) FIGURE 5 COLLECTOR-BASE CAPACITANCE a o S o = nN o o S a Cob, COLLECTOR-BASE CAPACITANCE (pF) S en 10 100 o 2.0 5.0 20 Vep, COLLECTOR-BASE VOLTAGE (VOLTS) FIGURE 7 NOISE FIGURE 5.0 = we 2s on 1.0 mAdc 2.0 mAdc N o NF, NOISE FIGURE (dB) 0.05 at a2 03 06 07 1.0 20 30 50 Rg, SOURCE RESISTANCE (k ohms) MPS-H54, MPS-H55 (continued) AM RADIO DESIGN INFORMATION FIGURE 8 1.0 MHz AMPLIFIER TEST CIRCUIT ut af es ~?@ ng , AR 0.01 uF F< 0.01 uF Rg = 509 L1, L2 = 80 pH, Unloaded Coil, = 200 1.0 mV @ 1.0 MHz T Marg Moog = = $ 15k 50 = > C1, C2 200-480 pF AM O.1 uF L 15k T 0.1 gF 1.3k = = -12V.0 = = FIGURE 9 1.0 MHz MIXER TEST CIRCUIT ul 1 # , n2 FL ex O.01 pF m4 5} _ Ox Rg = 500 O}} 7 11-80 vH, Unloaded Coil, O ~ 200 el 15k 02 213 Rg = 502 cy] tamve 100 Lo 1-200-480 pF OM 5 455 kHz Filt 1.0 MHz 1.455 MHz 2 180k a FL455 kH2 Filter sas uno [ = = (0-30V) = = -10V = = = FIGURE 10 AMPLIFIER POWER GAIN AP Voce = 10 Vde | f= 1.0 MHz Stern =.0 At currents other than Ic = 1.0 mAdc, circuit constants vary from those of Figure 8, as they ate readjusted far optimum gain. Gp, POWER GAIN (dB) 07 1.0 2.0 30 40 50 Ic, COLLECTOR CURRENT (mAdc) FIGURE 11 CONVERSION POWER GAIN Veg = 10 Vde Ta= 26C Ic = 1.0 mAdc Je = 0.5 mAde (FL Losses Not 3.0 mAde Gp, CONVERSION POWER GAIN (dB) 1.0 mAdc 10 15 20 30 40 (50 70 100 OSCILLATOR INJECTION VOLTAGE (mVrms) 1065