MS2210.PDF 4-15-03
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS2210
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
ABSOLUTE MAXIMUM ABSOLUTE MAXIMUM RATINGSRATINGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation*
940
W
IC
Device Current*
24
A
VCC
Collector-Supply Voltage*
50
TJ
Junction Temperature
+200
°°
C
TSTG
Storage Temperature
- 65 to + 200
°°
C
Thermal DataThermal Data
RTH(j-c)
Junction-Case Thermal Resistance*
0.16
°°
C/W
• Applies only to rated RF operation.
Features
• 255 MHz BANDWIDTH
• GOLD METALLIZATION
• EMITTER SITE BALLASTED
• Pout = 300W MINIMUM
• Gp = 7.0 dB
• LOW THERMAL RESISTANCE
• INPUT/OUTPUT MATCHING
• 15:1 VSWR CAPABILITY
DESCRIPTION:DESCRIPTION:
The MS2210 avionics power transistor is a broadband, high peak
pulse power device specifically designed for avionics applications
requiring broad bandwidth with moderate duty cycle and pulse width
constraints such as ground/ship DME/TACAN. The MS2210 is also
designed for specialized applications where reduced power is
provided under pulse formats utilizing short pulse widths and high
burst or overall duty cycles
This device is capable of withstanding 15:1 VSWR mismatch load
conditions at any phase angle under full rated conditions.
MS2210.PDF 4-15-03
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS2210
ELECTRICAL SPECIFICATIONS (ELECTRICAL SPECIFICATIONS (Tcase = 25Tcase = 25°°C)C)
STATICSTATIC
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
BVCBO
IC
= 50 mA
IE
= 0 mA
65
----
----
V
B
V
EBO
IE
= 15 mA
IC
= 0 mA
3.0
----
----
V
BVCER
IC
= 50 mA
RBE
=10 ΩΩ
65
----
----
V
ICES
VCE
= 50 V
----
----
30
mA
hFE
VCE
= 5 V
IC
= 5A
10
----
---
----
DYNAMICDYNAMIC
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
POUT f = 960 - 1215 MHz P
IN
= 60 W
VCC
= 50 V
300
330
----
W
ηη
C
f = 960 - 1215 MHz P
IN
= 60 W
VCC
= 50 V
38
45
----
%
GPf = 960 - 1215 MHz PIN = 60 W VCC = 50 V 7.0 7.4 ---- dB
Note: Pulse Format: 10 µµS
Duty Cycle: 10%
IMPEDANCE DATA IMPEDANCE DATA
FREQ ZIN(Ω)Ω) ZCL(Ω)Ω)
960 MHz 2.0 + j3.6 1.7 - j2.2
1090 MHz 3.5 + j1.7 2.0 - j1.7
1215 MHz 1.6 + j0.5 1.8 - j2.0
MS2210.PDF 4-15-03
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MS2210
PACKAGE MECHANICAL DATA