UNISONIC TECHNOLOGIES CO., LTD
75N75 Power MOSFET
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Copyright © 2009 Unisonic Technologies Co., Ltd. QW-R502-097.E
80Amps, 75Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 75N75 is n-channel enhancement mode power field
effect transistors with stable off-state characteristics, fast switching
speed, low thermal resistance, usually used at telecom and
computer application.
FEATURES
* RDS(ON) = 9.5m @VGS = 10 V
* Ultra low gate charge ( typical 117 nC )
* Fast switching capability
* Low reverse transfer Capacitance (CRSS= typical 240 pF )
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
SYMBOL
1.Gate
3.Source
2.Drain
TO-220
1
1TO-220F
TO-263
1
Lead-free: 75N75L
Halogen-free:75N75G
ORDERING INFORMATION
Ordering Number Pin Assignment
Normal Lead Free Plating Halogen Free Package 1 2 3
Packing
75N75-TA3-T 75N75L-TA3-T 75N75G-TA3-T TO-220
G D S Tube
75N75-TF3-T 75N75L-TF3-T 75N75G-TF3-T TO-220F G D S Tube
75N75-TQ2-T 75N75L-TQ2-T 75N75G-TQ2-T TO-263
G D S Tube
75N75-TQ2-R 75N75L-TQ2-R 75N75G-TQ2-R TO-263
G D S
Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source
75N75 Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 75 V
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current TC = 25°C ID 80 A
Pulsed Drain Current (Note 2) IDM 320 A
Single Pulsed Avalanche Energy (Note 3) EAS 700 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt 12 V/ns
TO-220/TO-263 300 W
Power Dissipation TO-220F PD 45 W
Junction Temperature TJ +175 °C
Storage Temperature TSTG -55 ~ +175 °C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by safe operating area
3. Starting TJ=25°C, ID=40A, VDD=37.5V
4. ISD≤80A, di/dt≤300A/µs, VDD≤BVDSS, TJ≤TJMAX
THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
TO-220/TO-263 62.5 °C /W
Junction to Ambient TO-220F JA 62.5 °C /W
TO-220/TO-263 0.5 °C /W
Junction to Case TO-220F JC 3.33 °C /W
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS V
GS = 0 V, ID = 250 µA 75 V
Drain-Source Leakage Current IDSS V
DS = 75 V, VGS = 0 V 1 µA
Forward VGS = 20V, VDS = 0 V 100 nA
Gate-Source Leakage Current Reverse IGSS VGS = -20V, VDS = 0 V -100 nA
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) V
DS = VGS, ID = 250 µA 2.0 3.0 4.0 V
Static Drain-Source On-State Resistance RDS(ON) V
GS = 10 V, ID = 40 A 9.5 11 m
DYNAMIC CHARACTERISTICS
Input Capacitance CISS 3700 pF
Output Capacitance COSS 730 pF
Reverse Transfer Capacitance CRSS
VGS = 0 V, VDS = 25 V
f = 1MHz 240 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) 25 ns
Turn-On Rise Time tR 100 ns
Turn-Off Delay Time tD(OFF) 66 ns
Turn-Off Fall Time tF
VDD = 37.5V, ID =45A,
VGS=10V, RG=4.7
30 ns
Total Gate Charge QG 117 160 nC
Gate-Source Charge QGS 27 nC
Gate-Drain Charge QGD
VDS = 60V, VGS = 10 V
ID = 80A 47 nC
75N75 Power MOSFET
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ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note 2) VSD V
GS = 0 V, IS = 80A 1.5 V
Continuous Source Current IS 80 A
Pulsed Source Current (Note 1) ISM 320 A
Reverse Recovery Time tRR 132 ns
Reverse Recovery Charge QRR
IS = 80A, VDD = 25 V
dIF / dt = 100 A/µs 660 µC
Note: 1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
75N75 Power MOSFET
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TEST CIRCUITS AND WAVEFORMS
Same
Type as
D.U.T.
L
VDD
Drive
r
VGS
RG
-
VD
S
D.U.T. +
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
P. W.
Period
D=
VGS
(Driver)
ISD
(D.U.T.)
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Body Diode Forward Voltage Drop
VDD
10V
VDS
(D.U.T.)
-
+
VGS=
P.W.
Period
1A Peak Diode Recovery d v/dt T est Circuit
1B Peak Diode Recovery dv/dt Waveforms
75N75 Power MOSFET
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TEST CIRCUITS AND WAVEFORMS (Cont.)
2A Switching Test Circuit 2B Switching Waveforms
3A Gate Charge Test Circuit 3B Gate Charge Waveform
4A Unclamped Inducti ve Switching Test Circuit 4B Unclamped Inductive Switching Waveforms
75N75 Power MOSFET
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TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
0
0
50
Drain Current, ID(µA)
Drain-Source Breakdown Voltage, BVDSS(V)
60
250
20
100
150
200
300
40 80 100
350
400
450
0.5
0
0
50
Drain Current vs. Gate Threshold Voltage
Drain Current, ID(µA)
Gate Threshold Voltage, VTH (V)
250
100
150
200
300
14.0
2.0
1.5 2.5 3.0 3.5
1500
0
Drain-Source On-State Resistance
Characteristics
Drain Current, ID(A)
Drain to Source Voltage, VDS (mV)
100
50
1
200 0.2
0
0
Drain Current vs. Source to Drain Voltage
Drain Current, ID(A)
Source to Drain Voltage, VSD (V)
0.8
0.4 0.6
2
4
6
8
10
12
1.0
2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
VGS=10V
ID=20A
VGS=10V
ID=1A
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
