DUAL
DUAL DUAL
DUAL SILICON SWITCHING NPN TRANSISTOR
SILICON SWITCHING NPN TRANSISTORSILICON SWITCHING NPN TRANSISTOR
SILICON SWITCHING NPN TRANSISTORS
SS
S
2N2222ADCSM
Dual High Speed Saturated Switching Transistor
Hermetic Ceramic Surface Mount Package
Screening Options Available
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab
assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that
datasheets are current before placing orders.
Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Document Number:
Issue:
Page:
7168
3
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ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated), Per Device
VCBO Collector – Base Voltage 75V
VCEO Collector – Emitter Voltage 40V
VEBO Emitter – Base Voltage 6V
IC Continuous Collector Current 0.8A
PD Total Power Dissipation at TA = 25°C 500mW
Derate Above 25°C 2.86mW/°C
TJ Junction Temperature Range -65 to +200°C
Tstg Storage Temperature Range -65 to +200°C
THERMAL PROPERTIES
Symbols Parameters Max.
Units
RθJA
(1)
Thermal Resistance, Junction To Ambient 350
°C/W
RθJSP
(2)
Thermal Resistance, Junction To Solder Pads 110
°C/W
Notes
(1) For non-thermal conductive PCB or unknown PCB surface mount conditions in free air.
(2) Infinite sink mount to PCB
DUAL
DUAL DUAL
DUAL SILICON SWITCHING
SILICON SWITCHINGSILICON SWITCHING
SILICON SWITCHING
NPN TRANSISTOR
NPN TRANSISTORNPN TRANSISTOR
NPN TRANSISTORS
SS
S
2N2222ADCSM
Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone:
Fax:
+44 (0) 1455 556565
+44 (0) 1455 552612
Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number:
Issue:
Page:
7168
3
2 of 3
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated), Per Device
Symbols Parameters Test Conditions Min. Typ. Max. Units
V(BR)CEO
(3)
Collector-Emitter
Breakdown Voltage IC = 10mA 40
V
V(BR)CBO Collector-Base
Breakdown Voltage IC = 10µA 75
V(BR)EBO Emitter-Base
Breakdown Voltage IE = 10µA 6
ICEX Collector-Emitter
Cut-Off Current VEB = 3V VCE = 60V 10
nA
ICBO Collector-Base
Cut-Off Current
IE = 0 VCB = 60V 10
TA = 150°C 10 µA
IEBO Emitter Cut-Off Current IC = 0 VEB = 3V 10 nA
VCE(Sat)
(3)
Collector-Emitter
Saturation Voltage
IC = 150mA IB = 15mA 0.3
V
IC = 500mA IB = 50mA 1.0
VBE(Sat)
(3)
Base-Emitter
Saturation Voltage
IC = 150mA IB = 15mA 0.6 1.2
IC = 500mA IB = 50mA 2.0
hFE
(3)
DC Current Gain
IC = 0.1mA VCE = 10V 35
-
IC = 1.0mA VCE = 10V 50
IC = 10mA VCE = 10V 75
TA = -55°C 35
IC = 150mA VCE = 10V 100 300
IC = 150mA VCE = 1.0V 50
IC = 500mA VCE = 10V 40
DYNAMIC CHARACTERISTICS
Cobo Output Capacitance VCB = 10V IE = 0 f = 1.0MHz 8
pF
Cibo Input Capacitance VEB = 0.5V IC = 0 f = 1.0MHz 30
ft Transition Frequency IC = 20mA VCE = 20V f = 100MHz 300 MHz
hfe
Small Signal Current Gain
IC = 1.0mA VCE = 10V f = 1.0kHz 50 300
-
IC = 10mA VCE = 10V f = 1.0kHz 75 375
td Delay Time VCC = 30V VBE = 0.5V 10
ns
tr Rise Time IC = 150mA IB1 = 15mA 25
ts Storage Time VCC = 30V VBE = 0.5V 225
tf Fall Time IC = 150mA IB1 = IB2 = 15mA 60
Note
(3) Pulse Width ≤ 380µs
,
δ ≤ 2%
DUAL
DUAL DUAL
DUAL SILICON SWITCHING
SILICON SWITCHINGSILICON SWITCHING
SILICON SWITCHING
NPN TRANSISTOR
NPN TRANSISTORNPN TRANSISTOR
NPN TRANSISTORS
SS
S
2N2222ADCSM
Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone:
Fax:
+44 (0) 1455 556565
+44 (0) 1455 552612
Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number:
Issue:
Page:
7168
3
3 of 3
MECHANICAL DATA
Dimensions in mm (inches)
1
2
6
3
4
5
2.54 ± 0.13
(0.10 ± 0.005)
0.64 ± 0.06
(0.025 ± 0.003)
0.23
(0.009)
1.40 ± 0.15
(0.055 ± 0.006)
1.65 ± 0.13
(0.065 ± 0.005)
2.29 ± 0.20
(0.09 ± 0.008)
rad.
A
1.27 ± 0.13
(0.05 ± 0.005)
A =6.22 ± 0.13
(0.245 ± 0.005)
4.32 ± 0.13
(0.170 ± 0.005)
LCC2 (MO
-
041BB)
Underside View
Pad 1 – Collector 1 Pad 4 – Collector 2
Pad 2 – Base 1 Pad 5 – Emitter 2
Pad 3 – Base 2 Pad 6 – Emitter 1
