2N6661DCSM
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
DOC 8874, ISSUE 1
FEATURES
• Faster switching
• Low Ciss
• Integral Source-Drain Diode
• High Input Impedance and High Gain
DESCRIPTION
These Dual enhancement-mode (normally-off) vertical DMOS
FETs are ideally suited to a wide range of switching and
amplifying applications where high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
High Reliability Screening options are available.
DUAL
N
–
CHANNEL
ENHANCEMENT MODE
MOSFET
VDSS 90V
ID 0.9A
RDS(on) 4.0Ω
CERAMIC LCC2 PACKAGE
(Underside View)
PAD 1 – DRAIN 1 PAD 4 – DRAIN 2
PAD 2 – GATE 1 PAD 5 – SOURCE 2
PAD 3 – GATE 2 PAD 6 – SOURCE 1
1
2
6
3
4
5
2.54 ± 0.13
(0.10 ± 0.005)
0.64 ± 0.06
(0.025 ± 0.003)
0.23
(0.009)
1.40 ± 0.15
(0.055 ± 0.006)
1.65 ± 0.13
(0.065 ± 0.005)
2.29 ± 0.20
(0.09 ± 0.008)
rad.
A
1.27 ± 0.13
(0.05 ± 0.005)
A =
6.22 ± 0.13
(0.245 ± 0.005)
4.32 ± 0.13
(0.170 ± 0.005)
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS
Each Side -
T
CASE
= 25°C unless otherwise stated
V
DS
Drain - Source Voltage 90V
I
D
Drain Current - Continuous (T
C
= 25°C) 0.9A
- Continuous (T
C
= 100°C) 0.7A
I
DM
Drain Current - Pulsed
(Note 1)
3A
V
GS
Gate - Source Voltage ±20V
P
tot(1)
Total Power Dissipation at T
mb
≤ 25°C 6.25W
De-rate Linearly above 25°C 0.050W/°C
P
tot(2)
Total Power Dissipation at T
amb
≤ 25°C 0.5W
T
j
,T
stg
Operating and Storage Junction Temperature Range -55 to +150°C
THERMAL DATA
R
thj-mb
Thermal Resistance Junction – Mounting base Max 20 °C/W
R
thj-amb
Thermal Resistance Junction - Ambient Max 250 °C/W
NOTES: 1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting T
J
= 25°C, L = 1.46mH, I
AS
= 48A, V
DD
= 50V, R
G
= 25Ω,
3) Pulse Test: Pulse Width ≤ 380µS, Duty Cycle , δ 2%
2N6661DCSM
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
DOC 8874, ISSUE 1
STATIC ELECTRICAL RATINGS
(Each Side - T
case
=25°C unless otherwise stated)
Parameter Test Conditions Min.
Typ.
Max. Unit
V
(BR)DSS
Drain – Source Breakdown Voltage V
GS
= 0V I
D
= 1.0µA 90 - -
V
DS
= V
GS
I
D
= 1.0mA 0.8 - 2
T
C
= 125°C 0.3 - -
V
GS(th)
Gate – Source threshold Voltage
T
C
= -55°C - - 2.5
V
V
GS
= ±20V V
DS
= 0V - - ±100
I
GSS
Gate – Source Leakage Current T
C
= 125°C - - ±500 nA
V
DS
= 72V V
GS
= 0V - - 1.0
I
DSS
Zero Gate Voltage Drain Current T
C
= 125°C - - 100 µA
I
D(on)
On – State Drain Current (note 3) V
DS
= 15V V
GS
= 10V 1.5 - - A
V
GS
= 5V I
D
= 0.3A - - 5.3
V
GS
= 10V I
D
= 1.0A - - 4
R
DS(on)
Drain – Source On Resistance
(note 3) T
C
= 125°C - - 7.5
Ω
V
GS
= 5V I
D
= 0.3A - - 1.6
V
GS
= 10V I
D
= 1.0A - - 4
V
DS(on)
Drain – Source On Voltage (note 3)
T
C
= 125°C - - 7.5
V
g
FS
Forward Transconductance
(Note 3)
V
DS
= 7.5V I
D
= 0.475A 170 - - ms
V
SD
Diode Forward Voltage
(Note 3)
V
GS
= 0V I
s
= 0.86A 0.7 - 1.4 V
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance - 50 -
C
oss
Output Capacitance - 40 -
C
rss
Reverse Transfer Capacitance
V
DS
= 25V
f = 1.0MHz V
GS
= 0V
- 10 -
pF
T
d(on)
Turn-On Delay - 10 -
T
d(off)
Turn-Off Delay Time V
DD
= 25V
R
GS
= 50Ω I
D
= 1A
(Note 3)
- 10 - ns
MATCHING CHARACTERISTICS
FET1 to FET2
V
GS(th) M
Gate – Source threshold Voltage
Matching V
DS
= V
GS
I
D
= 1mA - - ±25 mV
g
FSM
Forward Transconductance Matching
(Note 3)
V
DS
= 7.5V I
D
= 0.475A - - 50 ms
