IKW50N60T
TRENCHSTOPSeries q
IFAG IPC TD VLS 1 Rev. 2.6 20.09.2013
Low Loss DuoPack : IGBT in TRENCHSTOPand Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
Features:
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
TRENCHSTOPand Fieldstop technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC1for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type VCE ICVCE(sat),Tj=25°C Tj,max Marking Package
IKW50N60T 600V 50A 1.5V 175CK50T60 PG-TO247-3
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage, Tj ≥ 25CVCE 600 V
DC collector current, limited by Tjmax
TC= 25C
TC= 100CIC802)
50
A
Pulsed collector current, tplimited by Tjmax ICpuls 150
Turn off safe operating area, VCE = 600V, Tj= 175C, tp= 1µs -150
Diode forward current, limited by Tjmax
TC= 25C
TC= 100CIF100
50
Diode pulsed current, tplimited by Tjmax IFpuls 150
Gate-emitter voltage VGE 20 V
Short circuit withstand time3)
VGE = 15V, VCC 400V, Tj150CtSC 5s
Power dissipation TC= 25CPtot 333 W
Operating junction temperature Tj-40...+175
C
Storage temperature Tstg -55...+150
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260
1J-STD-020 and JESD-022
2) Value limited by bond wire
3) Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
PG-TO247-3
IKW50N60T
TRENCHSTOPSeries q
IFAG IPC TD VLS 2 Rev. 2.6 20.09.2013
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance,
junction case RthJC 0.45 K/W
Diode thermal resistance,
junction case RthJCD 0.8
Thermal resistance,
junction ambient RthJA 40
Electrical Characteristic, at Tj= 25 C, unless otherwise specified
Parameter Symbol Conditions Value Unit
min. Typ. max.
Static Characteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V, IC=0.2mA 600 - - V
Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC=50A
Tj=25C
Tj=175C
-
-1.5
1.9 2
-
Diode forward voltage VFVGE=0V, IF=50A
Tj=25C
Tj=175C-
-1.65
1.6 2.05
-
Gate-emitter threshold voltage VGE(th) IC=0.8mA,VCE=VGE 4.1 4.9 5.7
Zero gate voltage collector current ICES VCE=600V,
VGE=0V
Tj=25C
Tj=175C-
--
-40
3500
µA
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V, IC=50A - 31 - S
Integrated gate resistor RGint - Ω
Dynamic Characteristic
Input capacitance Ciss VCE=25V,
VGE=0V,
f=1MHz
- 3140 - pF
Output capacitance Coss - 200 -
Reverse transfer capacitance Crss - 93 -
Gate charge QGate VCC=480V, IC=50A
VGE=15V - 310 - nC
Internal emitter inductance
measured 5mm (0.197 in.) from case LE- 13 - nH
Short circuit collector current1) IC(SC) VGE=15V,tSC5s
VCC = 400V,
Tj150C
- 458.3 - A
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
IKW50N60T
TRENCHSTOPSeries q
IFAG IPC TD VLS 3 Rev. 2.6 20.09.2013
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter Symbol Conditions Value Unit
min. Typ. max.
IGBT Characteristic
Turn-on delay time td(on) Tj=25
C,
VCC=400V,IC=50A,
VGE=0/15V,rG=7,
L
=103nH,C
=39pF
L
,C
from Fig. E
Energy losses include
“tail” and diode reverse
recovery.
- 26 - ns
Rise time tr- 29 -
Turn-off delay time td(off) - 299 -
Fall time tf- 29 -
Turn-on energy Eon - 1.2 - mJ
Turn-off energy Eoff - 1.4 -
Total switching energy Ets - 2.6 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time trr Tj=25C,
VR=400V, IF=50A,
diF/dt=1280A/s
- 143 - ns
Diode reverse recovery charge Qrr - 1.8 - µC
Diode peak reverse recovery current Irrm - 27.7 - A
Diode peak rate of fall of reverse
recovery current during tb
dirr/dt - 671 - A/s
Switching Characteristic, Inductive Load, at Tj=175 C
Parameter Symbol Conditions Value Unit
min. Typ. max.
IGBT Characteristic
Turn-on delay time td(on) Tj=175
C,
VCC=400V,IC=50A,
VGE=0/15V,rG=7,
L
=103nH,C
=39pF
L
,C
from Fig. E
Energy losses include
“tail” and diode reverse
recovery.
- 27 - ns
Rise time tr- 33 -
Turn-off delay time td(off) - 341 -
Fall time tf- 55 -
Turn-on energy Eon - 1.8 - mJ
Turn-off energy Eoff - 1.8 -
Total switching energy Ets - 3.6 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time trr Tj=175C
VR=400V, IF=50A,
diF/dt=1280A/s
- 205 - ns
Diode reverse recovery charge Qrr - 4.3 - µC
Diode peak reverse recovery current Irrm - 40.7 - A
Diode peak rate of fall of reverse
recovery current during tb
dirr/dt - 449 - A/s
IKW50N60T
TRENCHSTOPSeries q
IFAG IPC TD VLS 4 Rev. 2.6 20.09.2013
IC,COLLECTOR CURRENT
100Hz 1kHz 10kHz 100kHz
0A
20A
40A
60A
80A
100A
120A
140A
TC=110°C
TC=80°C
IC,COLLECTOR CURRENT
1V 10V 100V 1000V
1A
10A
100A
10µs
1ms
DC
tp=2µs
50µs
10ms
f,SWITCHING FREQUENCY VCE,COLLECTOR-EMITTER VOLTAGE
Figure
1
.
Collector current as a function of
switching frequency
(Tj175C, D = 0.5, VCE = 400V,
VGE = 0/15V, rG= 7)
Figure
2
.
Safe operating area
(D = 0, TC= 25C, Tj175C;
VGE=0/15V)
Ptot,POWER DISSIPATION
25°C 50°C 75°C 100°C 125°C 150°C
0W
50W
100W
150W
200W
250W
300W
IC,COLLECTOR CURRENT
25°C 75°C 125°C
0A
20A
40A
60A
80A
TC,CASE TEMPERATURE TC,CASE TEMPERATURE
Figure
3
.
Power dissipation as a function of
case temperature
(Tj175C)
Figure
4
.
Collector current as a function of
case temperature
(VGE 15V, Tj175C)
c
c
IKW50N60T
TRENCHSTOPSeries q
IFAG IPC TD VLS 5 Rev. 2.6 20.09.2013
IC,COLLECTOR CURRENT
0V 1V 2V 3V
0A
20A
40A
60A
80A
100A
120A
15V
7V
9V
11V
13V
VGE=20V
IC,COLLECTOR CURRENT
0V 1V 2V 3V 4V
0A
20A
40A
60A
80A
100A
120A
15V
13V
7V
9V
11V
VGE=20V
VCE,COLLECTOR-EMITTER VOLTAGE VCE,COLLECTOR-EMITTER VOLTAGE
Figure
5
.
Typical output characteristic
(Tj= 25°C)
Figure
6
.
T
ypical output characteristic
(Tj= 175°C)
IC,COLLECTOR CURRENT
0V 2V 4V 6V 8V
0A
20A
40A
60A
80A
25°C
TJ=175°C
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
0°C 50°C 100°C 150°C
0.0V
0.5V
1.0V
1.5V
2.0V
2.5V
IC=50A
IC=100A
IC=25A
VGE,GATE-EMITTER VOLTAGE TJ,JUNCTION TEMPERATURE
Figure
7
.
Typical transfer characteristic
(VCE=10V)
Figure
8
.
Typical collector
-
emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
IKW50N60T
TRENCHSTOPSeries q
IFAG IPC TD VLS 6 Rev. 2.6 20.09.2013
t, SWITCHING TIMES
0A 20A 40A 60A 80A
10ns
100ns
tr
td(on)
tf
td(off)
t, SWITCHING TIMES
     
10ns
100ns
tr
td(on)
tf
td(off)
IC,COLLECTOR CURRENT RG,GATE RESISTOR
Figure
9
.
Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, rG= 7Ω,
Dynamic test circuit in Figure E)
Figure
10
.
Typical switching times as a
function of gate resistor
(inductive load, TJ= 175°C,
VCE= 400V, VGE = 0/15V, IC= 50A,
Dynamic test circuit in Figure E)
t, SWITCHING TIMES
25°C 50°C 75°C 100°C 125°C 150°C
10ns
100ns
tr
td(on)
tf
td(off)
VGE(th),GATE-EMITT TRSHOLD VOLTAGE
-50°C 0°C 50°C 100°C 150°C
0V
1V
2V
3V
4V
5V
6V
7V
min.
typ. max.
TJ,JUNCTION TEMPERATURE TJ,JUNCTION TEMPERATURE
Figure
11
.
Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC= 50A, rG=7Ω,
Dynamic test circuit in Figure E)
Figure
12
.
Gate
-
emitter threshold voltage as
a function of junction temperature
(IC= 0.8mA)
IKW50N60T
TRENCHSTOPSeries q
IFAG IPC TD VLS 7 Rev. 2.6 20.09.2013
E,SWITCHING ENERGY LOSSES
0A 20A 40A 60A 80A
0.0mJ
2.0mJ
4.0mJ
6.0mJ
8.0mJ
Ets*
Eoff
*) Eon and Ets include losses
due to diode recovery
Eon*
E,SWITCHING ENERGY LOSSES
  
0.0mJ
1.0mJ
2.0mJ
3.0mJ
4.0mJ
5.0mJ
6.0mJ
Ets*
Eoff
*) Eon and Ets include losses
due to diode recovery
Eon*
IC,COLLECTOR CURRENT RG,GATE RESISTOR
Figure
13
.
Typical switching energy losses
as a function of collector current
(inductive load, TJ= 175°C,
VCE = 400V, VGE = 0/15V, rG= 7Ω,
Dynamic test circuit in Figure E)
Figure
14
. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ= 175°C,
VCE = 400V, VGE = 0/15V, IC= 50A,
Dynamic test circuit in Figure E)
E,SWITCHING ENERGY LOSSES
25°C 50°C 75°C 100°C 125°C 150°C
0.0mJ
1.0mJ
2.0mJ
3.0mJ
Ets*
Eoff
*) Eon and Ets include losses
due to diode recovery
Eon*
E,SWITCHING ENERGY LOSSES
300V 350V 400V 450V 500V 550V
0mJ
1mJ
2mJ
3mJ
4mJ
Ets*
Eon*
*) Eon and Ets include losses
due to diode recovery
Eoff
TJ,JUNCTION TEMPERATURE VCE,COLLECTOR-EMITTER VOLTAGE
Figure
15
.
Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC= 50A, rG= 7Ω,
Dynamic test circuit in Figure E)
Figure
16
.
Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ= 175°C,
VGE = 0/15V, IC= 50A, rG= 7Ω,
Dynamic test circuit in Figure E)
IKW50N60T
TRENCHSTOPSeries q
IFAG IPC TD VLS 8 Rev. 2.6 20.09.2013
VGE,GATE-EMITTER VOLTAGE
0nC 100nC 200nC 300nC
0V
5V
10V
15V
480V
120V
c, CAPACITANCE
0V 10V 20V 30V 40V
100pF
1nF
Crss
Coss
Ciss
QGE,GATE CHARGE VCE,COLLECTOR-EMITTER VOLTAGE
Figure
17
.
Typical gate charge
(IC=50 A)
Figure
18
.
Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f= 1 MHz)
I
C(sc)
, short circuit COLLECTOR CURRENT
12V 14V 16V 18V
0A
100A
200A
300A
400A
500A
600A
700A
800A
tSC,SHORT CIRCUIT WITHSTAND TIME
10V 11V 12V 13V 14V
0µs
2µs
4µs
6µs
8µs
10µs
12µs
VGE,GATE-EMITTETR VOLTAGE VGE,GATE-EMITETR VOLTAGE
Figure
19
.
Typical short circuit collector
current as a function of gate-
emitter voltage
(VCE 400V, Tj150C)
Figure
20
.
Short circuit withstand time as a
function of gate-emitter voltage
(VCE=400V,start at TJ=25°C,
TJmax<150°C)
IKW50N60T
TRENCHSTOPSeries q
IFAG IPC TD VLS 9 Rev. 2.6 20.09.2013
ZthJC,TRANSIENT THERMAL IMPEDANCE
1µs
10µs
100µs
1ms
10ms
100ms
10-2K/W
10-1K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
ZthJC,TRANSIENT THERMAL IMPEDANCE
1µs
10µs
100µs
1ms
10ms
100ms
10
-2K/W
10
-1K/W
10
K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
tP,PULSE WIDTH tP,PULSE WIDTH
Figure
21
.
IGBT transient thermal
impedance
(D = tp/T)
Figure
22
.
Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)
trr,REVERSE RECOVERY TIME
700As
800As
900As
1000As
0ns
50ns
100ns
150ns
200ns
250ns
300ns
TJ=25°C
TJ=175°C
Qrr,REVERSE RECOVERY CHARGE
700As 800A/µs 900A/µs 1000As
0.0µC
0.5µC
1.0µC
1.5µC
2.0µC
2.5µC
3.0µC
3.5µC
4.0µC
TJ=25°C
TJ=175°C
diF/dt,DIODE CURRENT SLOPE diF/dt,DIODE CURRENT SLOPE
Figure
23
.
Typical reverse recovery time as
a function of diode current slope
(VR=400V, IF=50A,
Dynamic test circuit in Figure E)
Figure
24
.
Typical reverse recovery charge
as a function of diode current
slope
(VR= 400V, IF= 50A,
Dynamic test circuit in Figure E)
R,(K/W )
,(s)
0.18355 7.425*10
-
2
0.12996 8.34*10
-
3
0.09205 7.235*10
-
4
0.03736 1.035*10
-
4
0.00703 4.45*10
-
5
C
1
=
1
/
R
1
R1R2
C
2
=
2
/
R
2
R,(K/W )
,(s)
0.2441 7.037*10
-
2
6.53*10
0.2007 7.312*10
-
3
0.1673 6.431*10
-
4
0.1879 4.79*10
-
5
C
1
=
1
/
R
1
R1R2
C
2
=
2
/
R
2
IKW50N60T
TRENCHSTOPSeries q
IFAG IPC TD VLS 10 Rev. 2.6 20.09.2013
Irr,REVERSE RECOVERY CURRENT
700As 800As 900As 1000As
0A
10A
20A
30A
40A
TJ=25°C
TJ=175°C
di
rr
/dt
,
DIODE PEAK RATE OF FALL
OF REVERSE RECOVERY
CURRENT
700A/µs 800A/µs 900A/µs 1000As
0A/µs
-150As
-300As
-450As
-600As
-750As TJ=25°C
TJ=175°C
diF/dt,DIODE CURRENT SLOPE diF/dt,DIODE CURRENT SLOPE
Figure
25
.
Typical reverse recovery current
as a function of diode current
slope
(VR= 400V, IF= 50A,
Dynamic test circuit in Figure E)
Figure
26
.
Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(VR=400V, IF=50A,
Dynamic test circuit in Figure E)
IF,FORWARD CURRENT
0V 1V 2V
0A
20A
40A
60A
80A
100A
120A
175°C
TJ=25°C
VF,FORWARD VOLTAGE
0°C 50°C 100°C 150°C
0.0V
0.5V
1.0V
1.5V
2.0V
50A
IF=100A
25A
VF,FORWARD VOLTAGE TJ,JUNCTION TEMPERATURE
Figure
27
.
Typical diode forward current as
a function of forward voltage
Figure
28
.
Typi
cal diode forward voltage as a
function of junction temperature
IKW50N60T
TRENCHSTOPSeries q
IFAG IPC TD VLS 11 Rev. 2.6 20.09.2013
IKW50N60T
TRENCHSTOPSeries q
IFAG IPC TD VLS 12 Rev. 2.6 20.09.2013
I
r
r
m
90%
Ir r m
10%
Ir r m
di /dt
F
tr r
IF
i,v
t
QSQF
tStF
VR
di /dt
r r
Q =Q Q
r r S F
+
t =t t
r r S F
+
Figure C. Definition of diodes
switching characteristics
p(t)
1
2
n
T
(
t
)
j
1
1
2
2
n
n
T
C
r r
r
r
rr
Figure D. Thermal equivalent
circuit
Figure A. Definition of switching times
Figure B. Definition of switching losses
IKW50N60T
TRENCHSTOPSeries q
IFAG IPC TD VLS 13 Rev. 2.6 20.09.2013
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
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characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
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