G E SOLID STATE O1 DE Pp aa7soas ooneayy 5 iE 3875081 GE SOLID STATE DIE 17944 D Signal Transistors T 27 / a 2N5249, 2N5249A Silicon Transistors TO-98 The GE/RCA 2N5249 and 2N5249A are planar epitaxial pas- tight beta control and excellent low noise characteristics. sivated NPN silicon transistors designed especially for low |= The 2N5249A includes a noise figure specifiation. These noise preamplifier and small signal industrial amplifier appll- types are supplied In JEDEC TO-98 package. cations. The units feature low collector saturation voltage, Devices in TO-98 package are supplied with and without seating flange (see Dimensional Ouiline). MAXIMUM RATINGS, Absolute-Maximum Values: COLLECTOR TO EMITTER VOLTAGE (VcEo) COLLECTOR TO BASE VOLTAGE (Vcgo) ..- EMITTER TO BASE VOLTAGE (Veg) CONTINUOUS COLLECTOR CURRENT (Ip) (NOte 1) oe ccc cece e reenter eee eet eee ent ne Pee n en ene ERODES TE Rea E 100 mA TOTAL POWER DISSIPATION (Ta < 25C) (Py) (Note 2)... 0. cece eee eect eee e eet teen e teen eee rete en ena s 360 mW TOTAL POWER DISSIPATION (Ta 55C) (Pq) (Note 2). 0... c ccc c cece enn n center enter eee e ene ten eres 260 mW OPERATING TEMPERATURE (T)) 0... cece ene cece cence ener nent ene enna ere entrar eetens .. = 55 to + 125C STORAGE TEMPERATURE (Tapa)... sce eee cece ce cece en ee tee ented tee a nen teneenes .. -65 to + 150C LEAD TEMPERATURE, 1/16" + 1/32 (1.58mm 4 0.8mm) from case for 108 Max. (Tp)... cece eee e ee eee te een e renee en ee ees + 260C NOTES: 1. Determined from power limitations due to saturation voitage at this current. 2. Derate 3.8mW/C increase in ambient temperature above 25C File Number 2064 48 G E SOLID STATE OL DE fj 3875081 oo17445 7 ft 3875081 G E SOLID STATE OTE 17945 D Signal Transistors 2N5249, 2N5249A T2917 ELECTRICAL CHARACTERISTICS, At Ambient Temperature (Ta) = 25C Unless Otherwise Specified LIMITS CHARACTERISTICS SYMBOL MIN. TYP, MAX, UNITS Collector Cutoff Current (ep = 50V) : Icpo - - 30 nA (Vop = 50V, Ta = 100C = - 10 pA Coltector Cutoff Currant (Vcg = 50V, base-emltted junction short-circuited) Ices | - - 30 nA Emitter Cutoff Current Veg = 5V) lego - - 50 DC Forward Current Transfer Ratio Wog = 5Vilo = 2mA) fee 400 - 800 - Woe = 5V Io = 100 pA) _ 300 - Small-Signal Forward Current Transfer Ratio (Voge = 8 Vig = 2mA,f = 1 kHz} Nie 400 - 1200 = Collector Emitter Breakdown Voltage (Ig = 10 mA) Viariceo** 50 - - Collector Base Breakdown Voitage (Ip = 10 vA) VipAjc60 70 - - Vv Emitter Base Breakdown Voltage (le = 10 vA) Vipmeso 5 - - Collector Saturation Voltage (Ic = 10MA, 1p = 1 MA) Voetsat * - _ 0.125 Base Saturation Voltage (Iq = 10 mA, Ig = 1mA) Veeteaty * - - 0.78 Base Emitter Voltage (Vce = 40V, Ig = 2mA)} Vee 0.5 - 09 Output Capacitance, Common Base (Vcop = 10V, tf = 0,f = 1 MHz) Cop = - 4 pF Noise Figure (Io = 100WA, Vog = V. Rg = 5k, f = 1kH2, BW = 15.7 kHz) For 2N5249A only. NF - _ 3 dB Typically a minimum of 95% of the distribution is above this value. **Pulse conditions: 300 ps pulse width, <2% duty cycle. VOLTAGE (Voce) =5 . 4 1006] COLLECTOR-TO-EMITTERI \ | | A le) t 5G Lantetes Pe RATIO thee) fz uw uw oo z < F bE z ww 2 3 a & = 9 a 9 a a wa N i 4 6 z DC FORWARD CURRENT TRANSFER AATIO (heg) CURRENT =10 2 -65 -35 5 25 35 as oot QO. 1 10 100 AMBIENT TEMPERATURE (Ta) -C 4 COLLECTOR CURRENT (Ic)- mA 92$-az456 92$-42456 Fig. 1~ Typical de forward-current transfer ratio characteristics. Fig. 2Normalized de forward-currant transfer ratio characteristic. 49 GE SOLID STATE 02 DEP se7sosy oor 9 3875081 G E SOLID STATE O1E 17946 D Signal Transistors . 2 7 / 9 2N5249, 2N5249A Tv EMITTER-TO-BASE VOLTAGE (Veg) - 6 5 OUTPUT CAPACITANCE (Cebo) - pF INPUT CAPACITANCE (Cabo) - pF 25 COLLECTOR-TO-BASE VOLTAGE (Vca)- 9208-42487 AMBIENT TEMPERATURE (Ta) - C Fig. 4 Typical input and output capacitance characteristics, 92C$-42459 Fig. 3 Typical collector cutoffcurrent characteristic, TERMINAL CONNECTIONS Lead 1 - Emitter Lead 2 - Collector Lead 3 - Base 50