ON Semiconductor PNP Complementary Power Transistors MJD2955 NPN MJD3055 DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS * Lead Formed for Surface Mount Applications in Plastic Sleeves * * * * * (No Suffix) Straight Lead Version in Plastic Sleeves ("-1" Suffix) Lead Formed Version Available in 16 mm Tape and Reel ("T4" Suffix) Electrically Similar to MJE2955 and MJE3055 DC Current Gain Specified to 10 Amperes High Current Gain-Bandwidth Product -- fT = 2.0 MHz (Min) @ IC = 500 mAdc CASE 369A-13 IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III MAXIMUM RATINGS Value Unit VCEO 60 Vdc Collector-Base Voltage VCB 70 Vdc Emitter-Base Voltage VEB 5 Vdc Collector Current IC 10 Adc Base Current IB 6 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 20 0.16 Watts W/C Total Power Dissipation (1) @ TA = 25C Derate above 25C PD 1.75 0.014 Watts W/C TJ, Tstg -55 to +150 C Symbol Max Unit Thermal Resistance, Junction to Case RJC 6.25 C/W Thermal Resistance, Junction to Ambient (1) RJA 71.4 C/W Collector-Emitter Voltage Operating and Storage Junction Temperature Range CASE 369-07 MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS 0.165 4.191 Symbol 0.190 4.826 Rating Characteristic 0.100 2.54 THERMAL CHARACTERISTICS 0.243 6.172 0.063 1.6 0.118 3.0 (1) These ratings are applicable when surface mounted on the minimum pad sizes recommended. Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed. Semiconductor Components Industries, LLC, 2001 November, 2001 - Rev. 5 1 inches mm Publication Order Number: MJD2955/D MJD2955 MJD3055 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 60 -- Vdc Collector Cutoff Current (VCE = 30 Vdc, IB = 0) ICEO -- 50 Adc Collector Cutoff Current (VCE = 70 Vdc, VEB(off) = 1.5 Vdc) (VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150C) ICEX -- -- 0.02 2 Collector Cutoff Current (VCB = 70 Vdc, IE = 0) (VCB = 70 Vdc, IE = 0, TC = 150C) ICBO -- -- 0.02 2 Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO -- 0.5 20 5 100 -- -- -- 1.1 8 OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) (IC = 30 mAdc, IB = 0) mAdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (1) (IC = 4 Adc, VCE = 4 Vdc) (IC = 10 Adc, VCE = 4 Vdc) hFE -- Collector-Emitter Saturation Voltage (1) (IC = 4 Adc, IB = 0.4 Adc) (IC = 10 Adc, IB = 3.3 Adc) VCE(sat) Vdc Base-Emitter On Voltage (1) (IC = 4 Adc, VCE = 4 Vdc) VBE(on) -- 1.8 Vdc fT 2 -- MHz DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. http://onsemi.com 2 MJD2955 MJD3055 TYPICAL CHARACTERISTICS PD, POWER DISSIPATION (WATTS) TA TC 2.5 25 2 20 TC 1.5 15 TA SURFACE MOUNT 1 10 0.5 5 0 0 25 50 75 100 125 150 T, TEMPERATURE (C) Figure 1. Power Derating 500 100 2 VCE = 2 V TJ = 150C 0.7 0.5 25C -55C 50 30 20 0.02 0.05 0.1 0.5 0.2 1 2 5 10 0 0.1 0.2 0.4 0.6 1 2 Figure 2. DC Current Gain Figure 3. Turn-On Time 4 6 5 TJ = 25C VCC = 30 V IC/IB = 10 IB1 = IB2 3 2 TJ = 25C 1 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2 V 0.4 0.2 0.06 0.1 IC, COLLECTOR CURRENT (AMP) t, TIME (s) V, VOLTAGE (VOLTS) 0.6 td @ VBE(off) 5 V IC, COLLECTOR CURRENT (AMP) 1 0.8 0.1 0.03 0.02 1.4 1.2 tr 0.3 0.2 0.07 0.05 10 5 0.01 TJ = 25C VCC = 30 V IC/IB = 10 1 t, TIME (s) hFE, DC CURRENT GAIN 300 200 0.5 0.7 0.5 0.3 0.2 tf 0.1 VCE(sat) @ IC/IB = 10 0.2 0.3 ts 1 2 3 5 0.07 0.05 0.06 0.1 10 0.2 0.4 0.6 1 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 4. "On" Voltages, MJD3055 Figure 5. Turn-Off Time http://onsemi.com 3 2 4 6 MJD2955 MJD3055 2 TJ = 25C 1.6 V, VOLTAGE (VOLTS) VCC +30 V 25 s RC +11 V 0 1.2 -9 V VBE(sat) @ IC/IB = 10 0.8 VBE @ VCE = 3 V -4 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS VCE(sat) @ IC/IB = 10 5 2 3 0.2 0.3 0.5 1 IC, COLLECTOR CURRENT (AMP) D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA 10 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 6. "On" Voltages, MJD2955 1 0.7 0.5 Figure 7. Switching Time Test Circuit D = 0.5 0.3 0.2 0.2 0.05 0.02 0.01 0.03 P(pk) RJC(t) = r(t) RJC RJC = 6.25C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) 0.1 0.1 0.07 0.05 0.02 D1 51 tr, tf 10 ns DUTY CYCLE = 1% 0.4 0 0.1 SCOPE RB t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 t, TIME (ms) 10 20 30 50 100 200 300 500 1k Figure 8. Thermal Response IC, COLLECTOR CURRENT (AMP) 10 5 3 2 TJ = 150C 1 500s There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 9 is based on TJ(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 8. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100s 1ms 0.5 0.3 5ms 0.1 dc WIRE BOND LIMIT THERMAL LIMIT TC = 25C (D = 0.1) SECOND BREAKDOWN LIMIT 0.05 0.03 0.02 0.01 0.6 FORWARD BIAS SAFE OPERATING AREA INFORMATION 1 2 20 4 6 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 40 60 Figure 9. Maximum Forward Bias Safe Operating Area http://onsemi.com 4 MJD2955 MJD3055 PACKAGE DIMENSIONS DPAK CASE 369A-13 ISSUE AA -T- C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 3 U K F J L H D G 2 PL 0.13 (0.005) M T http://onsemi.com 5 DIM A B C D E F G H J K L R S U V Z INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 --0.030 0.050 0.138 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 --0.77 1.27 3.51 --- MJD2955 MJD3055 PACKAGE DIMENSIONS DPAK CASE 369-07 ISSUE M C B V E R 4 A 1 2 3 S -T- SEATING PLANE K J F H D G 3 PL 0.13 (0.005) M T http://onsemi.com 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K R S V INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.175 0.215 0.050 0.090 0.030 0.050 MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.46 1.27 2.28 0.77 1.27 MJD2955 MJD3055 Notes http://onsemi.com 7 MJD2955 MJD3055 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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