Complementary Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
•Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
•Straight Lead Version in Plastic Sleeves
(“–1” Suffix)
•Lead Formed Version Available in 16 mm Tape and Reel (“T4”
Suffix)
•Electrically Similar to MJE2955 and MJE3055
•DC Current Gain Specified to 10 Amperes
•High Current Gain–Bandwidth Product —
fT = 2.0 MHz (Min) @ IC
= 500 mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎÎÎ
Value
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎÎ
ÎÎÎÎÎ
VCEO
ÎÎÎÎÎ
ÎÎÎÎÎ
60
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Voltage
ÎÎÎÎÎ
ÎÎÎÎÎ
VCB
ÎÎÎÎÎ
ÎÎÎÎÎ
70
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage
ÎÎÎÎÎ
ÎÎÎÎÎ
VEB
ÎÎÎÎÎ
ÎÎÎÎÎ
5
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current
ÎÎÎÎÎ
ÎÎÎÎÎ
IC
ÎÎÎÎÎ
ÎÎÎÎÎ
10
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current
ÎÎÎÎÎ
ÎÎÎÎÎ
IB
ÎÎÎÎÎ
ÎÎÎÎÎ
6
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation @ TC = 25C
Derate above 25C
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
PD†
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
20
0.16
ÎÎÎ
Î
Î
Î
ÎÎÎ
Watts
W/C
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation (1) @ TA = 25C
Derate above 25C
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
PD
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
1.75
0.014
ÎÎÎ
Î
Î
Î
ÎÎÎ
Watts
W/C
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction
Temperature Range
ÎÎÎÎÎ
ÎÎÎÎÎ
TJ, Tstg
ÎÎÎÎÎ
ÎÎÎÎÎ
–55 to +150
ÎÎÎ
ÎÎÎ
C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case
ÎÎÎÎÎ
ÎÎÎÎÎ
RθJC
ÎÎÎÎÎ
ÎÎÎÎÎ
6.25
ÎÎÎ
ÎÎÎ
C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Ambient (1)
ÎÎÎÎÎ
ÎÎÎÎÎ
RθJA
ÎÎÎÎÎ
ÎÎÎÎÎ
71.4
ÎÎÎ
ÎÎÎ
C/W
(1) These ratings are applicable when surface mounted on the minimum pad sizes recommended.
†Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed.
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
November, 2001 – Rev. 5 1Publication Order Number:
MJD2955/D
MJD2955
MJD3055
CASE 369A–13
SILICON
POWER TRANSISTORS
10 AMPERES
60 VOLTS
20 WATTS
CASE 369–07
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
PNP
NPN
0.243
6.172
0.063
1.6
0.118
3.0
0.100
2.54 0.165
4.191
0.190
4.826
inches
mm
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2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎ
ÎÎÎ
Min
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage (1)
(IC = 30 mAdc, IB = 0)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VCEO(sus)
ÎÎÎ
Î
Î
Î
ÎÎÎ
60
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
—
ÎÎÎ
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current (VCE = 30 Vdc, IB = 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
ICEO
ÎÎÎ
ÎÎÎ
—
ÎÎÎÎ
ÎÎÎÎ
50
ÎÎÎ
ÎÎÎ
µAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150C)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICEX
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
—
—
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
0.02
2
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCB = 70 Vdc, IE = 0)
(VCB = 70 Vdc, IE = 0, TC = 150C)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICBO
ÎÎÎ
Î
Î
Î
ÎÎÎ
—
—
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
0.02
2
ÎÎÎ
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
IEBO
ÎÎÎ
ÎÎÎ
—
ÎÎÎÎ
ÎÎÎÎ
0.5
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain (1)
(IC = 4 Adc, VCE = 4 Vdc)
(IC = 10 Adc, VCE = 4 Vdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
hFE
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
20
5
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
100
—
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
—
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Saturation Voltage (1)
(IC = 4 Adc, IB = 0.4 Adc)
(IC = 10 Adc, IB = 3.3 Adc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VCE(sat)
ÎÎÎ
Î
Î
Î
ÎÎÎ
—
—
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
1.1
8
ÎÎÎ
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter On Voltage (1)
(IC = 4 Adc, VCE = 4 Vdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VBE(on)
ÎÎÎ
Î
Î
Î
ÎÎÎ
—
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
1.8
ÎÎÎ
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current–Gain — Bandwidth Product
(IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
fT
ÎÎÎ
Î
Î
Î
ÎÎÎ
2
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
—
ÎÎÎ
Î
Î
Î
ÎÎÎ
MHz
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
MJD2955 MJD3055
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3
V, VOLTAGE (VOLTS)
t, TIME (s)µ
5
3
2
1
0.5
0.3
0.7
0.2
500
300
200
100
30
20
50
IC, COLLECTOR CURRENT (AMP)
2
0.5
0.3
IC, COLLECTOR CURRENT (AMP)
0.2
Figure 1. Power Derating
Figure 2. DC Current Gain
0.01 0.02 0.05 1 10250.1
Figure 3. Turn–On Time
Figure 4.
“
On
”
Voltages, MJD3055
TJ = 25°C
tr
TJ = 150°C
-55°C
25°C
1
0.7
0.2
IC, COLLECTOR CURRENT (AMP)
0.2 1 60.6 20.06 0.4 4
IC, COLLECTOR CURRENT (AMP)
0.1 0.2 0.3 1 10250.5 3
Figure 5. Turn
–
Off Time
hFE, DC CURRENT GAIN
VCE = 2 V
10
50.5
25
25
T, TEMPERATURE (°C)
050 75 100 125 150
20
15
10
5
PD, POWER DISSIPATION (WATTS)
2.5
0
2
1.5
1
0.5
TATC
TC
TA
SURFACE
MOUNT
ts
1.4
0.8
0.6
0
1.2
1
0.4
0.2
TJ = 25°C
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
VCC = 30 V
IC/IB = 10
0.05
0.03
0.02
0.1
0.07
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 2 V
0.1
0.05
0.07
0.1
td @ VBE(off) ≈ 5 V
0.2 1 60.6 20.06 0.4 40.1
t, TIME (s)µ
tf
TYPICAL CHARACTERISTICS
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4
Figure 6. “On” Voltages, MJD2955
2
0.1
0
0.2 0.3 0.5 1 3 10
0.8
1.6
1.2
V, VOLTAGE (VOLTS)
0.4
5
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 3 V
Figure 7. Switching Time Test Circuit
Figure 8. Thermal Response
t, TIME (ms)
1
0.01
0.02
0.7
0.2
0.1
0.05
0.02
r(t), EFFECTIVE TRANSIENT THERMAL
0.05 1 2 5 10 20 50 100 200 500
RθJC(t) = r(t) RθJC
RθJC = 6.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
0.1 0.50.2
RESISTANCE (NORMALIZED)
1 k
0.5
0.3
0.07
0.03
0.03 0.3 3 30 300
IC, COLLECTOR CURRENT (AMP)
2
+11 V
25 µs
0
-9 V
RB
-4 V
D1
SCOPE
VCC
+30 V
RC
tr, tf ≤ 10 ns
DUTY CYCLE = 1%
51
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
0.01
Figure 9. Maximum Forward Bias
Safe Operating Area
0.01
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.02
5
2
1
10
0.5
0.1
TJ = 150°C
1ms
dc
3
0.3
0.6 1 2 6020 40
IC, COLLECTOR CURRENT (AMP)
WIRE BOND LIMIT
THERMAL LIMIT TC = 25°C (D = 0.1)
SECOND BREAKDOWN LIMIT
1064
500µs
0.03
0.05
100µs
5ms
FORWARD BIAS SAFE OPERATING AREA
INFORMATION
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 9 is based on TJ(pk) = 150C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150C. TJ(pk) may be calculated from the data in
Figure 8. A t high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
MJD2955 MJD3055
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5
PACKAGE DIMENSIONS
CASE 369A–13
ISSUE AA
DPAK
D
A
K
B
R
V
S
FL
G
2 PL
M
0.13 (0.005) T
E
C
U
J
H
–T– SEATING
PLANE
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.235 0.250 5.97 6.35
B0.250 0.265 6.35 6.73
C0.086 0.094 2.19 2.38
D0.027 0.035 0.69 0.88
E0.033 0.040 0.84 1.01
F0.037 0.047 0.94 1.19
G0.180 BSC 4.58 BSC
H0.034 0.040 0.87 1.01
J0.018 0.023 0.46 0.58
K0.102 0.114 2.60 2.89
L0.090 BSC 2.29 BSC
R0.175 0.215 4.45 5.46
S0.020 0.050 0.51 1.27
U0.020 --- 0.51 ---
V0.030 0.050 0.77 1.27
Z0.138 --- 3.51 ---
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
123
4
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6
PACKAGE DIMENSIONS
CASE 369–07
ISSUE M
DPAK
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
123
4
V
S
A
K
–T–
SEATING
PLANE
R
B
F
GD3 PL
M
0.13 (0.005) T
C
E
JH
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.235 0.250 5.97 6.35
B0.250 0.265 6.35 6.73
C0.086 0.094 2.19 2.38
D0.027 0.035 0.69 0.88
E0.033 0.040 0.84 1.01
F0.037 0.047 0.94 1.19
G0.090 BSC 2.29 BSC
H0.034 0.040 0.87 1.01
J0.018 0.023 0.46 0.58
K0.350 0.380 8.89 9.65
R0.175 0.215 4.45 5.46
S0.050 0.090 1.27 2.28
V0.030 0.050 0.77 1.27
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Notes
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8
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