2N2222AHR Hi-Rel 40 V, 0.8 A NPN transistor Datasheet - production data Features Parameter ESCC JANS BVCEO min 40 V 50 V 1 2 3 TO-18 3 IC (max) 0.8 A hFE at 10 V - 150 mA 100 3 4 1 1 2 * Hermetic packages 2 LCC-3 UB * ESCC and JANS qualified Pin 4 in LCC-3UB is connected to the metallic lid. Figure 1. Internal schematic diagramI * Up to 100 krad(Si) low dose ratee Description The 2N2222AHR is a silicon planar NPN transistor specifically designed and housed in hermetic packages for aerospace and Hi-Rel applications. It is available in the JAN qualification system (MIL-PRF19500 compliance) and in the ESCC qualification system (ESCC 5000 compliance). In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Table 1. Device summary Device Qualification system Agency specification Package Radiation level EPPL JANSR2N2222AUBx JANSR MIL-PRF-19500/291 UB 100 krad HDR - JANS2N2222AUBx JANS MIL-PRF-19500/291 UB - - 2N2222ARUBx ESCC 5201/002 UB 100 krad ESCC Target 2N2222AUB1xSW ESCC 5201/002 UB 100 krad SW - 2N2222AUB1x ESCC 5201/002 UB - Target SOC2222ARHRx ESCC 5201/002 LCC-3 100 krad ESCC Yes SOC2222ASW ESCC 5201/002 LCC-3 100 krad SW - SOC2222AHRB ESCC 5201/002 LCC-3 - Yes 2N2222ARHRx ESCC 5201/002 TO-18 100 krad ESCC Target 2N2222ASW ESCC 5201/002 TO-18 100 krad SW - 2N2222AHR ESCC 5201/002 TO-18 - - September 2013 This is information on a product in full production. DocID16558 Rev 13 1/20 www.st.com 20 Contents 2N2222AHR Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 JANS electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 ESCC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.3 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.4 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 Radiation hardness assurance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Shipping details . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 7 2/20 6.1 Date code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6.2 Documentation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 DocID16558 Rev 13 2N2222AHR 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VCBO Parameter Value Unit Collector-base voltage (IE = 0) 75 V Collector-emitter voltage (IB = 0) for JANS devices 50 V Collector-emitter voltage (IB = 0) for ESCC devices 40 V Emitter-base voltage (IC = 0) 6 V Collector current 0.8 A Total dissipation at Tamb 25 C ESCC: TO-18 LCC-3 and UB LCC-3 and UB (1) JANS: LCC-3UB 0.5 0.5 0.73 0.5 Total dissipation at Tcase 25 C ESCC: TO-18 1.8 Total dissipation at Tsp(IS) = 25 C JANS: UB 1 W -65 to 200 C 200 C VCEO VEBO IC PTOT TSTG TJ Storage temperature Max. operating junction temperature W 1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate. Table 3. Thermal data Symbol LCC-3 and UB TO-18 Thermal resistance junction-case (max) for JANS - - Thermal resistance junction-case (max) for ESCC - 97 Thermal resistance junction-solder pad (infinite sink) (max) for JANS 90 - Thermal resistance junction-solder pad (infinite sink) (max) for ESCC - - Thermal resistance junction-ambient (max) for JANS 325 - Thermal resistance junction-ambient (max) for ESCC 350 240(1) 350 Parameter Unit RthJC RthJSP(IS) C/W RthJA 1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate. DocID16558 Rev 13 3/20 Electrical characteristics 2 2N2222AHR Electrical characteristics JANS and ESCC version of the products are assembled and tested in compliance with the agency specification it is qualified in. The electrical characteristics of each version are provided in dedicated tables. Tcase = 25 C unless otherwise specified. 2.1 JANS electrical characteristics Table 4. JANS electrical characteristics Symbol Parameter Test conditions VCB = 75 V VCB = 60 V VCB= 60 V Collector cut-off current (IE = 0) ICBO Typ. Max. Unit - 10 10 10 A nA A Tamb = 150 C ICES Collector cut-off current (IE = 0) VCE = 50 V - 50 nA IEBO Emitter cut-off current (IC = 0) VEB = 6 V VEB = 4 V - 10 10 A nA Collector-emitter V(BR)CEO (1) breakdown voltage (IB = 0) IC = 10 mA 50 - V VCE(sat) (1) Collector-emitter saturation voltage IC = 150 mA IC = 500 mA IB = 15 mA IB = 50 mA Base-emitter saturation voltage IC = 150 mA IC= 500 mA IB = 15 mA IB = 50 mA 0.6 (1) DC current gain IC = 0.1 mA IC = 1 mA IC = 10 mA IC = 150 mA IC = 500 mA IC = 10 mA Tamb = -55 C VCE = 10 V VCE = 10 V VCE = 10 V VCE = 10 V VCE = 10 V VCE = 10 V 50 75 100 100 30 35 VCE = 20 V f = 100 MHz VCE = 10 V f = 1 kHz IC = 20 mA 2.5 Small signal current gain IC =1 mA 50 Cobo Output capacitance (IE = 0) VCB = 10 V 100 kHz f 1 MHz - 8 pF Cibo Output capacitance (IE = 0) VEB = 0.5 V 100 kHz f 1 MHz - 25 pF VBE(sat) hFE (1) hfe 4/20 Min. DocID16558 Rev 13 - 0.3 1 V V 1.2 2 V V 325 - 300 - 2N2222AHR Electrical characteristics Table 4. JANS electrical characteristics (continued) Symbol Parameter Test conditions ton Turn-on time VCC = 30 V IB1 = 15 mA toff Turn-off time VCC = 30 V IC = 150 mA IB1 = -IB2 = 15 mA Min. Typ. Max. Unit - 35 ns - 300 ns Typ. Max. Unit - 10 10 nA A - 10 nA IC = 150 mA 1. Pulsed duration = 300 s, duty cycle 2 % 2.2 ESCC electrical characteristics Table 5. ESCC electrical characteristics Symbol Parameter Test conditions Min. Collector cut-off current (IE = 0) VCB = 60 V VCB = 60 V Emitter cut-off current (IC = 0) VEB = 3 V Collector-base breakdown voltage (IE = 0) IC = 100 A 75 - V Collector-emitter V(BR)CEO (1) breakdown voltage (IB = 0) IC = 30 mA 40 - V V(BR)EBO Emitter-base breakdown voltage (IC = 0) IE = 100 A 6 - V VCE(sat) (1) Collector-emitter saturation voltage IC = 150 mA IB = 15 mA - 0.3 V VBE(sat) (1) Base-emitter saturation voltage IC = 150 mA IB = 15 mA 0.87 1.2 V DC current gain IC = 0.1 mA IC = 10 mA IC = 150 mA IC = 500 mA IC = 10 mA Tamb = -55 C VCE = 10 V VCE = 10 V VCE = 10 V VCE = 10 V VCE = 10 V ICBO IEBO V(BR)CBO hFE (1) Tamb = 150 C 300 - 35 hfe Small signal current gain VCE = 20 V f = 100 MHz Cobo Output capacitance (IE = 0) VCB = 10 V 100 kHz f 1 MHz DocID16558 Rev 13 35 75 100 40 IC = 20 mA 3 - 10 - 8 pF 5/20 Electrical characteristics 2N2222AHR Table 5. ESCC electrical characteristics (continued) Symbol Parameter Test conditions ton Turn-on time VCC = 30 V IB1 = 15 mA toff Turn-off time VCC = 30 V IC = 150 mA IB1 = -IB2 = 15 mA Min. Typ. Max. Unit - 35 ns - 285 ns IC = 150 mA 1. Pulsed duration = 300 s, duty cycle 2 % 2.3 Electrical characteristics (curves) Figure 2. DC current gain Figure 3. Collector emitter saturation voltage ( K)( 9&( 9 & & & & & & ,F $ $0Y Figure 4. Base emitter saturation voltage K)( & & & ,F $ 6/20 $0Y DocID16558 Rev 13 ,F $ $0Y 2N2222AHR 2.4 Electrical characteristics Test circuits Figure 5. JANS saturated turn-on switching time test circuit Figure 6. JANS saturated turn-off switching time test circuit DocID16558 Rev 13 7/20 Electrical characteristics 2N2222AHR Figure 7. ESCC resistive load switching test circuit 1. Fast electronic switch 2. Non-inductive resistor 8/20 DocID16558 Rev 13 2N2222AHR 3 Radiation hardness assurance Radiation hardness assurance The products guaranteed in radiation within the JANS system fully comply with the MILPRF-19500/255 specification. The products guaranteed in radiation within the ESCC system fully comply with the ESCC 5201/002 and ESCC 22900 specifications. JANS radiation assurance ST JANS parts guaranteed at 100 krad (Si), tested, in full compliancy with the MIL-PRF19500 specification, specifically the Group D, subgroup 2 inspection, between 50 and 300 rad/s. A brief summary is provided below: - All test are performed in accordance to MIL-PRF-19500 and test method 1019 of MIL-STD-750 for total Ionizing dose. - Each wafer of each lot is tested. The table below provides for each monitored parameters of the test conditions and the acceptance criteria Table 6. MIL-PRF-19500 (test method 1019) post radiation electrical characteristics Value Symbol Parameter Test conditions Unit Min. ICBO IEBO Collector to base cutoff current VCB = 75 20 A VCB = 60 V 20 nA Emitter to base cutoff current VEB = 6 V 20 A VEB = 4 V 20 nA V(BR)CEO Breakdown voltage, collector to emitter IC = 10 mA ICES Collector to emitter cutoff current VCE = 50 V hFE VCE(sat) VBE(sat) Max. Forward-current transfer ratio 50 V 100 VCE = 10 V; IC = 0.1 mA [25](1) VCE = 10 V; IC = 1.0 mA [37.5](1) VCE = 10 V; IC = 10 mA [50](1) VCE = 10 V; IC = 150 mA [50](1) VCE = 10 V; IC = 500 mA [15](1) nA 325 300 Collector-emitter saturation voltage IC = 150 mA; IB = 15 mA 0.35 IC = 500 mA; IB = 50 mA 1.15 Base-emitter saturation voltage IC = 150 mA; IB = 15 mA V 0.6 1.38 V IC = 500 mA; IB = 50 mA 2.3 1. See method 1019 of MIL-STD-750 for how to determine [hFE] by first calculating the delta (1/hFE) from the pre- and Post-radiation hFE. Notice the [hFE] is not the same as hFE and cannot be measured directly. The [hFE] value can never exceed the pre-radiation minimum hFE that it is based upon. DocID16558 Rev 13 9/20 Radiation hardness assurance 2N2222AHR ESCC radiation assurance Each product lot is tested according to the ESCC basic specification 22900, with a minimum of 11 samples per diffusion lot and 5 samples per wafer, one sample being kept as unirradiated sample, all of them being fully compliant with the applicable ESCC generic and/or detailed specification. ST goes beyond the ESCC specification by performing the following procedure: - Test of 11 pieces by wafer, 5 biased at least 80% of V(BR)CEO, 5 unbiased and 1 kept for reference - Irradiation at 0.1 rad (Si)/s - Acceptance criteria of each individual wafer if as 100 krad guaranteed if all 10 samples comply with the post radiation electrical characteristics provided in Table 8 - Delivery together with the parts of the radiation verification test (RVT) report of the particular wafer used to manufacture the products. This RVT includes the value of each parameter at 30, 50, 70 and 100 krad (Si) and after 24 hour annealing at room temperature and after an additional 168 hour annealing at 100C. Table 7. Radiation summary Radiation test 100 krad "SW" 100 krad ESCC Wafer test each each Part tested 5 biased 5 biased + 5 unbiased Dose rate 0.1 rad/s 0.1 rad/s Acceptance Fixed values (1) MIL-STD-750 method 1019 Displacement damage Optional Optional Agency part number (ex) 5202/001/02 (2) ST part number (ex) SOC2222ASW SOC2222ARHRG Documents CoC + RVT CoC + RVT 1. Part numbers with suffix "SW" have same pre and post irradiation electrical 2. Example of the 2N2222A in LCC-3 Gold finish 10/20 5202/001/02 (2) DocID16558 Rev 13 2N2222AHR Radiation hardness assurance Table 8. ESCC 5201/002 post radiation electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB = 60 V - 10 nA IEBO Emitter cut-off current (IC = 0) VEB = 3 V - 10 nA Collector-base breakdown voltage (IE = 0) IC = 100 A 75 - V Collector-emitter V(BR)CEO(1) breakdown voltage (IB = 0) IC = 30 mA IC = 10 mA 40 50 - V V V(BR)EBO Emitter-base breakdown voltage (IC = 0) IE = 100 A 6 - V VCE(sat) (1) Collector-emitter saturation voltage IC = 150 mA IB = 15 mA VBE(sat) (1) Base-emitter saturation voltage IC = 150 mA IB = 15 mA Post irradiation gain calculation (2) IC = 0.1 mA IC = 10 mA IC = 150 mA IC = 500 mA VCE = 10 V VCE = 10 V VCE = 10 V VCE = 10 V V(BR)CBO [hFE] (1) - [17.5] [37.5] [50] [20] 0.3 V 1.2 V 300 1. Pulsed duration = 300 s, duty cycle 2 % 2. The post-irradiation gain calculation of [hFE], made using hFE measurements from prior to and on completion of irradiation testing and after each annealing step if any, shall be as specified in MILSTD-750 method 1019. DocID16558 Rev 13 11/20 Package mechanical data 4 2N2222AHR Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. Table 9. Product mass summary 12/20 Package Mass (g) UB 0.06 LCC-3 0.06 TO-18 0.40 DocID16558 Rev 13 2N2222AHR Package mechanical data Table 10. UB mechanical data mm. Dim. Min. Typ. Max. A 1.16 1.42 C 0.46 0.51 0.56 D 0.56 0.76 0.96 E 0.92 1.02 1.12 F 1.95 2.03 2.11 G 2.92 3.05 3.18 I 2.41 2.54 2.67 J 0.42 0.57 0.72 K 1.37 1.52 1.67 L 0.41 0.51 0.61 M 2.46 2.54 2.62 N 1.81 1.91 2.01 r 0.20 r1 0.30 r2 0.56 Figure 8. UB drawings DocID16558 Rev 13 13/20 Package mechanical data 2N2222AHR Table 11. LCC-3 mechanical data mm. Dim. Min. Typ. A 1.16 1.42 C 0.45 0.50 0.56 D 0.60 0.76 0.91 E 0.91 1.01 1.12 F 1.95 2.03 2.11 G 2.92 3.05 3.17 I 2.41 2.54 2.66 J 0.42 0.57 0.72 K 1.37 1.52 1.67 L 0.40 0.50 0.60 M 2.46 2.54 2.62 N 1.80 1.90 2.00 R 0.30 Figure 9. LCC-3 drawings 1 2 3 14/20 Max. DocID16558 Rev 13 2N2222AHR Package mechanical data Table 12. TO-18 mechanical data mm. Dim. Min. A Typ. Max. 12.7 B 0.49 D 5.3 E 4.9 F 5.8 G 2.54 H 1.2 I 1.16 L 45 Figure 10. TO-18 drawings DocID16558 Rev 13 15/20 Order codes Order codes 16/20 5 Table 13. Ordering information DocID16558 Rev 13 CPN Agency specification EPPL Quality level Radiation level Package Lead finish Marking(1) Packing J2N2222AUB1 - - Engineering model JANS - UB Gold J2222AUB1 WafflePack 2N2222AUB1 - - Engineering model ESCC - UB Gold 2N2222AUB1 WafflePack SOC2222A - - Engineering model ESCC - LCC-3 Gold SOC2222A WafflePack JANSR2N2222AUBG MIL-PRF-19500/255 - JANSR 100 krad HDR UB Gold JSR2222 WafflePack JANSR2N2222AUBT MIL-PRF-19500/255 - JANSR 100 krad HDR UB Solder Dip JSR2222 WafflePack JANS2N2222AUBG MIL-PRF-19500/255 - JANS - UB Gold JS2222 WafflePack JANS2N2222AUBT MIL-PRF-19500/255 - JANS - UB Solder Dip JS2222 WafflePack 2N2222ARUBG 5201/002/11R Target ESCC 100 krad ESCC UB Gold 520100211R WafflePack 2N2222ARUBT 5201/002/12R Target ESCC 100 krad ESCC UB Solder Dip 520100212R WafflePack 2N2222AUB11SW (2) 5201/002/11 - ESCC 100 krad SW UB Gold 520100211 WafflePack 2N2222AUB12SW (2) 5201/002/12 - ESCC 100 krad SW UB Solder Dip 520100212 WafflePack 2N2222AUB11 5201/002/11 Target ESCC - UB Gold 520100211 WafflePack 2N2222AUB12 5201/002/12 Target ESCC - UB Solder Dip 520100212 WafflePack SOC2222ARHRG 5201/002/04R Yes ESCC 100 krad ESCC LCC-3 Gold 520100204R WafflePack SOC2222ARHRT 5201/002/05R Yes ESCC 100 krad ESCC LCC-3 Solder Dip 520100205R WafflePack SOC2222ASW (2) 5201/002/04 or 05 ESCC 100 krad SW LCC-3 Gold or Solder Dip 520100204 or 05 - (3) (3) WafflePack Yes ESCC - LCC-3 (3) WafflePack 2N2222ARHRG 5201/002/01R Target ESCC 100 krad ESCC TO-18 Gold 520100201R Strip Pack 5201/002/04 or 05 2N2222AHR (3) Gold or Solder Dip 520100204 or 05 SOC2222AHRB CPN Agency specification EPPL Quality level Radiation level Package Lead finish Marking(1) Packing 2N2222ARHRT 5201/002/02R Target ESCC 100 krad ESCC TO-18 Solder Dip 520100202R Strip Pack 2N2222ASW (2) 5201/002/01 or 02 ESCC 100 krad SW TO-18 Gold or Solder Dip 520100201 or 02 - ESCC - TO-18 Gold or Solder Dip 520100201 or 02 - (3) 5201/002/01 or 02 2N2222AHR (3) (3) (3) 2N2222AHR Table 13. Ordering information (continued) Strip Pack Strip Pack 1. Specific marking only. The full marking includes in addition: For the engineering models : ST logo, date code, country of origin (FR). For ESCC flight parts : ST logo, date code, country of origin (FR), ESA logo, serial number of the part within the assembly lot. For JANS flight parts : ST logo, date code, country of origin (FR), manufacturer code (CSTM), serial number of the part within the assembly lot. 2. Not recommended for new design. 3. Depending ESCC part number mentioned on the purchase order. DocID16558 Rev 13 Contact ST sales office for information about the specific conditions for: - Products in die form - Other JANS quality levels - Tape and reel packing Order codes 17/20 Shipping details 2N2222AHR 6 Shipping details 6.1 Date code Date code xyywwz is structured as below table: Table 14. Date code x EM (ESCC & JANS) 3 ESCC FLIGHT - JANS FLIGHT (diffused in Singapore) 6.2 yy ww z last two digits of the year week digits lot index in the week W Documentation Table 15. Documentation provided for each type of product Quality level Radiation level Engineering model - - JANS Flight - Certificate of conformance JANSR Flight 100 krad - ESCC Flight Documentation Certificate of conformance 50 rad/s radiation verification test report Certificate of conformance Certificate of conformance 100 krad 0.1 rad/s radiation verification test report 18/20 DocID16558 Rev 13 2N2222AHR 7 Revision history Revision history Table 16. Document revision history Date Revision 04-Jan-2010 1 Initial release 16-Apr-2010 2 Added Table 1 on page 1 09-Jul-2010 3 Modified: Table 1 on page 1 and Table 12 on page 15 30-Nov-2011 4 12-Dec-2011 5 Changes - - - - - Modified: Table 5 on page 5 Added: Section 2.3: Electrical characteristics (curves) Modified: Table 1 and 2 Added: Table 2, 11, 12 Minor text changes in the document title and description on the cover page. Minor text changes to improve readability Updated: - - - - 17-Apr-2012 Title and description in cover page. PTOT in Table 2: Absolute maximum ratings. The entire Section 2: Electrical characteristics. Table 13: Ordering information. 6 Added: - Table 3: Thermal data, Section 3: Radiation hardness assurance and Table 13: Ordering information. - Figure 5: JANS saturated turn-on switching time test circuit and Figure 6: JANS saturated turn-off switching time test circuit. - Section 6: Shipping details. Updated titles in Figure 5: JANS saturated turn-on switching time 19-Apr-2012 7 test circuit and Figure 6: JANS saturated turn-off switching time test circuit. 24-Apr-2012 8 Updated RthJA value in Table 3: Thermal data. 14-May-2012 9 Updated Table 13: Ordering information. 21-Feb-2013 10 Table 1: Device summary and Table 13: Ordering information have been updated. Updated text in Section 3: Radiation hardness assurance. 04-Apr-2013 11 Inserted Table 7: Radiation summary 06-Jun-2013 12 Updated package name for UB. 18-Sep-2013 13 Table 1: Device summary and Table 13: Ordering information have been updated. DocID16558 Rev 13 19/20 2N2222AHR Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2013 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 20/20 DocID16558 Rev 13