Absolute Maximum Ratings
Parameter Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current 26
ID @ VGS = 12V, TC = 100°C Continuous Drain Current 16
IDM Pulsed Drain Current À104
PD @ TC = 25°C Max. Power Dissipation 150 W
Linear Derating Factor 1.2 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy Á500 mJ
IAR Avalanche Current À26 A
EAR Repetitive Avalanche Energy À15 mJ
dv/dt Peak Diode Recovery dv/dt Â5.0 V/ns
TJOperating Junction -55 to 150
TSTG Storage Temperature Range
Pckg. Mounting Surface Temp. 300 (for 5s)
Weight 8.0 (Typical) g
Pre-Irradiation
International Rectifier’s RADHard HEXFET®
technology
provides high performance power MOSFETs for
space applications. This technology has over a
decade of proven performance and reliability in
satellite applications. These devices have been
characterized for both Total Dose and Single Event
Effects (SEE). The combination of low Rdson and
low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
oC
A
RADIATION HARDENED 200V, N-CHANNEL
POWER MOSFET
RAD Hard
™
HEXFET
®
TECHNOLOGY
SURFACE MOUNT (TO-254AA Tabless)
12/24/04
www.irf.com 1
Product Summary
Part Number Radiation Level RDS(on) ID
IRHMJ7250 100K Rads (Si) 0.10Ω26A
IRHMJ3250 300K Rads (Si) 0.10Ω26A
IRHMJ4250 600K Rads (Si) 0.10Ω26A
IRHMJ8250 1000K Rads (Si) 0.10Ω26A
Features:
nSingle Event Effect (SEE) Hardened
nLow RDS(on)
nLow Total Gate Charge
nProton Tolerant
nSimple Drive Requirements
nEase of Paralleling
nHermetically Sealed
nCeramic Eyelets
nLight Weight
For footnotes refer to the last page
TO-254AA Tabless
IRHMJ7250
PD-96914
2www.irf.com
IRHMJ7250 Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 200 — — V VGS =0 V, ID = 1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — 0.27 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source — — 0.10 VGS = 12V, ID = 16A
On-State Resistance — — 0.11 ΩVGS = 12V, ID = 26A
VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 1.0mA
gfs Forward Transconductance 8.0 — — S ( )V
DS > 15V, IDS = 16A
IDSS Zero Gate Voltage Drain Current — — 25 VDS= 160V,VGS=0V
— — 250 VDS = 160V
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V
IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V
QgTotal Gate Charge — — 170 VGS = 12V, ID = 26A
Qgs Gate-to-Source Charge — — 30 nC VDS = 100V
Qgd Gate-to-Drain (‘Miller’) Charge — — 60
td(on) Turn-On Delay Time — — 33 VDD = 100V, ID = 26A,
trRise Time — — 140 VGS = 12V, RG = 2.35Ω
td(off) Turn-Off Delay Time — — 140
tfFall Time — — 140
LS + LDTotal Inductance — 6.8 —
Ciss Input Capacitance — 4700 — VGS = 0V, VDS = 25V
Coss Output Capacitance — 850 — pF f = 1.0MHz
Crss Reverse Transfer Capacitance — 210 —
nA
Ω
nH
ns
µA
Note: Corresponding Spice and Saber models are available on International Rectifier website.
For footnotes refer to the last page
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case — — 0.83
RthCS Case-to-sink — 0.21 —
RthJA Junction-to-Ambient — — 48 Typical socket mount
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
ISContinuous Source Current (Body Diode) — — 26
ISM Pulse Source Current (Body Diode) À— — 104
VSD Diode Forward Voltage — — 1.4 V Tj = 25°C, IS = 26A, VGS = 0V Ã
trr Reverse Recovery Time — — 820 nS Tj = 25°C, IF = 26A, di/dt ≤100A/µs
QRR Reverse Recovery Charge — — 12 µC VDD ≤ 25V Ã
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
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Pre-Irradiation IRHMJ7250
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter Up to 600K Rads(Si)1 1000K Rads (Si)2
Units
Test Conditions
Min Max Min Max
BVDSS Drain-to-Source Breakdown Voltage 200 — 200 — V VGS = 0V, ID = 1.0mA
VGS(th) Gate Threshold Voltage à 2.0 4.0 1.25 4.5 VGS = VDS, ID = 1.0mA
IGSS Gate-to-Source Leakage Forward — 100 — 100 nA VGS = 20V
IGSS Gate-to-Source Leakage Reverse — -100 — -100 VGS = -20 V
IDSS Zero Gate Voltage Drain Current — 25 — 50 µA VDS=160V, VGS =0V
RDS(on) Static Drain-to-Source à — 0.094 — 0.149 Ω VGS = 12V, ID =16A
On-State Resistance (TO-3)
RDS(on) Static Drain-to-Source à — 0.10 — 0.155 Ω VGS = 12V, ID =16A
On-State Resistance (TO-254AA)
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
1. Part numbers IRHMJ7250, IRHMJ3250 and IRHMJ4250
2. Part number IRHMJ8250
Fig a. Single Event Effect, Safe Operating Area
VSD Diode Forward Voltage à — 1.4 — 1.4 V VGS = 0V, IS = 26A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
0
50
100
150
200
0-5-10-15-20
VGS
VDS
Cu
Br
Table 2. Single Event Effect Safe Operating Area
Ion LET Energy Range VDS(V)
MeV/(mg/cm2)) (MeV) (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Cu 28 285 43 190 180 170 125 —
Br 36.8 305 39 100 100 100 50 —
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IRHMJ7250 Pre-Irradiation
Post-Irradiation
Fig 2. Typical Response of On-State Resistance
Vs. Total Dose Exposure
Fig 1. Typical Response of Gate Threshhold
Voltage Vs. Total Dose Exposure
Fig 3. Typical Response of Transconductance
Vs. Total Dose Exposure
Fig 4. Typical Response of Drain to Source
Breakdown Vs. Total Dose Exposure
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Pre-Irradiation IRHMJ7250
Post-Irradiation
Fig 6. Typical On-State Resistance Vs.
Neutron Fluence Level
Fig 5. Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 8b. VDSS Stress Equals
80% of BVDSS During Radiation
Fig 9. High Dose Rate
(Gamma Dot) Test Circuit
Fig 7. Typical Transient Response
of Rad Hard HEXFET During
1x1012 Rad (Si)/Sec Exposure
Fig 8a. Gate Stress of VGSS
Equals 12 Volts During
Radiation
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IRHMJ7250 Pre-Irradiation
Post-IrradiationRadiation Characteristics
Fig 11. Typical Output Characteristics
Post-Irradiation 100K Rads (Si)
Fig 10. Typical Output Characteristics
Pre-Irradiation
Fig 12. Typical Output Characteristics
Post-Irradiation 300K Rads (Si)
Fig 13. Typical Output Characteristics
Post-Irradiation 1 Mega Rads(Si)
Note: Bias Conditions during radiation: VGS = 12 Vdc, VDS = 0 Vdc
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Pre-Irradiation IRHMJ7250
Radiation Characteristics
Fig 16. Typical Output Characteristics
Post-Irradiation 300K Rads (Si)
Fig 17. Typical Output Characteristics
Post-Irradiation 1 Mega Rads(Si)
Fig 14. Typical Output Characteristics
Pre-Irradiation
Fig 15. Typical Output Characteristics
Post-Irradiation 100K Rads (Si)
Note: Bias Conditions during radiation: VGS = 0 Vdc, VDS = 160 Vdc
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IRHMJ7250 Pre-Irradiation
Fig 21. Normalized On-Resistance
Vs. Temperature
Fig 19. Typical Output CharacteristicsFig 18. Typical Output Characteristics
Fig 20. Typical Transfer Characteristics
www.irf.com 9
Pre-Irradiation IRHMJ7250
Fig 25. Maximum Safe Operating
Area
Fig 23. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 22. Typical CapacitanceVs.
Drain-to-Source Voltage
Fig 24. Typical Source-Drain Diode
Forward Voltage
10 www.irf.com
IRHMJ7250 Pre-Irradiation
Fig 26a. Switching Time Test Circuit
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
Fig 26b. Switching Time Waveforms
Fig 27. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 26. Maximum Drain Current Vs.
Case Temperature
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
+
-
VDD
VGS
www.irf.com 11
Pre-Irradiation IRHMJ7250
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
12 V
Fig 29b. Gate Charge Test Circuit
Fig 29a. Basic Gate Charge Waveform
Fig 28c. Maximum Avalanche Energy
Vs. Drain Current
Fig 28b. Unclamped Inductive Waveforms
Fig 28a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
.
VGS
12 www.irf.com
IRHMJ7250 Pre-Irradiation
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
160 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 25V, starting TJ = 25°C, L= 1.5mH
Peak IL = 26A, VGS = 12V
 ISD ≤ 26A, di/dt ≤ 190A/µs,
VDD ≤ 200V, TJ ≤ 150°C
Case Outline and Dimensions — TO-254AA Tabless
Foot Notes:
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids
that will produce fumes containing beryllium.
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. T HIS OUT LINE IS A MODIFIED T O-254AA JEDEC OUT LINE.
3. CONT ROL L ING DIMENS ION: INCH.
NOT ES : PIN ASSIGNMENTS
1 = DRAIN
2 = SOURCE
3 = GATE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/2004
