fAAMOSPEC COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS .. designed for use in general purpose power amplifier and switching applications. FEATURES: * Collector-Emitter Sustaining Voltage - Veeojsusy= 49V(Min)- BD905, BD906 60V(Min)- BD9C7, BD908 80V(Min)- BD909, BD919 100V(Min)- BD911, BD912 * DC Current Gain hFE= 40(Min)@I,= G.5A * Current Gain-Bandwidth Product fT=3.0 MHz (Min)@ |,=500mA MAXIMUM RATINGS NPN BD905 BD907 BD909 BD911 PNP BD906 BD908 BD910 BD912 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS Characteristic Symbol!| BD905 | BD907 | BD909 | BD911 | Unit BDs06 | BD9s08 | BD910 | BD912 Collector-Emitter Voltage Veeo 45 60 80 100 V Collector-Base Voltage Vepo 45 60 80 100 Vv Emitter-Base Voltage Vepo 5.0 Vv Collector Current - Continuous le 15 A ~ Peak 20 Base Current ls 5.0 A Total Power Dissipation@T, = 25C Pp 90 Ww Derate above 25C 0.72 wrc Operating and Storage Junction Ty. Tst C Temperature Range -65 to +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case | Rojc 1.38 CAN Pp , POWER DISSIPATION(WATTS) cS 88888388 25 50 75 100 To . TEMPERATURE(C) FIGURE -1 POWER DERATING 150 125 45 -100 VOLTS 90 WATTS TO-220 4 B y roe 1 cee 4 ce 4 i123 tL E | | ' Po O byl LL tH | ne F LL ~aKR- PIN 1.BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR(CASE) DIM MILLIMETERS MIN MAX A 14.68 15.31 B 9.78 10.42 C 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.20 297 L 0.33 0.55 M 2.48 2.98 oO 3.70 3.90BD905, BD907, BD909, BD911 NPN / BDS906, BD908, BD810, BD912 PNP ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwse noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage(1) | BD905,BD906 VcEo(sus) 45 Vv (1,= 50 mA, Ip= 0) BD907,BD908 60 BD909,BD910 80 BD911,BD912 100 Collector Cutoff Current (V.,= 30 V, I,= 0) BD905,BD906 (Veg= 30 V, 1,= 0) BDS07,BD908 (Veg= 40 V, I= 0) BD909,BD910 (Vo,= 50 V, I= 0 ) BD911,BD912 lcEo mA oooo Collector Cutoff Current lopo mA (Veg= 45 V, I= 0) BD905,BD906 0.5 (V,= 60 V, I= 0) BD907,BD908 0.5 (V.,= 80 V, I= 0) BD909,BD910 0.5 (V-,= 100 V, I= 0) BD911,BD912 0.5 Emitter Cutoff Current leso mA (Vep= 5.0 V, Ig= 0) 1.0 ON CHARACTERISTICS (1) DC Current Gain hFE (1g =O.5A, Vog = 4.0 V) 40 250 (1g = 5.0A, Vog = 4.0 VV) 15 150 (Ig = 10 A, Veg = 4.0 V) 5.0 Collector-Emitter Saturation Voitage VcE(sat) V (Ig =5.0A, 1, =0.5A) 1.0 (Ig =10A, lp =2.5A) 3.0 Base-Emitter Saturation Voltage Vee;sat) Vv (Ig = 10A, lp =2.5A) 2.5 Base-Emitter On Voltage Vee(on) Vv (Ig =5.0 A, Vog= 4.0 V) 1.5 DYNAMIC CHARACTERISTICS Current Gain-Bandwidth Prodct (2) fr MHz (I,=500 mA, Vo_=4.0 V, f= 1MHz) 3.0 (1) Pulse Test: Pulse width = 300 us , Duty Cycle = 2.0% (2) f; = hy. F testa V VOLTAGE (VOLTS) hre , DC CURRENT GAIN V VOLTAGE (VOLTS) 20 = 0.1 0.1 0.1 BD905,BD907,BD909,BD911 NPN / BD906,BD908,BD910,BD912 PNP DC CURRENT GAIN VcE=4.0V To=25C - PNP 0.05 0.1 02 03 05 10 2030 50 10 Ic, COLLECTOR CURRENT (AMP) "ON" VOLTAGES BD905/7/9/11 Qc/a=10 Vec@ Ver=4.0V @icllg=10 0.2 0.5 1.0 2.0 5.0 10 20 IC , COLLECTOR CURRENT (AMP) "ON" VOLTAGES BD906/8/9/10/12 VeE(set) @le/g=10 Vae@ Vee=4.0V Vee;sat) @ loflg=10 0.2 0.5 1.9 2.0 5.0 iC , COLLECTOR CURRENT (AMP) 10 20 fr -Ic COMMON T#25C Vens4V fr, TRANSITION FREQUENCY (MHz) N 0.01 0.02 005 0.1 0.2 05 10 2.0 5.0 10 Ic, COLLECTOR CURRENT (A) COLLECTOR-BASE CAPACITANCES NPN. f=1MHz -PNP Tj=25C 150 c = ut oO 2 100 E o <= Qa 4 Qo g & 50 oOG 10 20~~6.0 1030 50 100 COLLECTOR-BASE VOLTAGE(VOLTS) ACTIVE REGION SAFE OPERATING AREA(SOA) NN - - Bondng Wire Limit Second Breakdown ~ Thermally Limit Tc=28'C(Singe PUS) BHen9 BD910 BD911,BD912 iC , COLLECTOR CURRENT (Amp) BD907 2 8 10 20 50 100 200 VCE , COLLECTOR EMITTER VOLTAGE (VOLTS)