PD- 95409A IRF1312PbF IRF1312SPbF IRF1312LPbF HEXFET(R) Power MOSFET Applications l l l l High frequency DC-DC converters Motor Control Uninterrutible Power Supplies Lead-Free Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS 80V RDS(on) max ID 10m 95A l D2Pak IRF1312S TO-220AB IRF1312 TO-262 IRF1312L Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. Units 95 67 380 3.8 210 1.4 20 5.1 -55 to + 175 A W W/C V V/ns C 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Thermal Resistance Parameter RJC RCS RJA RJA Notes Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount) through www.irf.com Typ. Max. --- 0.50 --- --- 0.75 --- 62 40 Units C/W are on page 11 1 12/23/04 IRF1312/S/LPbF Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 80 --- --- 3.5 --- --- --- --- Typ. --- 0.078 6.6 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 10 m VGS = 10V, ID = 57A 5.5 V VDS = VGS, ID = 250A 1.0 VDS = 76V, VGS = 0V A 250 VDS = 64V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 92 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 93 36 34 25 130 47 51 5450 550 340 1910 380 620 Max. Units Conditions --- S VDS = 25V, ID = 57A 140 ID = 57A --- nC VDS = 40V --- VGS = 10V, --- VDD = 40V --- ID = 57A ns --- RG = 4.5 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 64V, = 1.0MHz --- VGS = 0V, V DS = 0V to 64V Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. Max. Units --- --- --- 250 57 21 mJ A mJ Diode Characteristics IS ISM VSD trr Qrr ton 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- 95 showing the A G integral reverse --- --- 380 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 57A, VGS = 0V --- 64 96 ns TJ = 25C, IF = 57A --- 150 230 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRF1312/S/LPbF 1000 1000 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V 100 10 1 0.1 5.0V 100 10 5.0V 20s PULSE WIDTH Tj = 25C 20s PULSE WIDTH Tj = 25C 0.01 1 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000.00 2.5 T J = 175C 100.00 10.00 T J = 25C 1.00 0.10 VDS = 25V 20s PULSE WIDTH 0.01 ID = 95A VGS = 10V 2.0 (Normalized) RDS(on) , Drain-to-Source On Resistance ID, Drain-to-Source Current (A) VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 1.5 1.0 0.5 5 6 7 8 9 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF1312/S/LPbF 20 VGS = 0V, f = 1 MHZ C iss = C gs + Cgd , SHORTED C ds VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) 100000 Crss = Cgd Coss = Cds + Cgd 10000 Ciss Coss 1000 Crss ID= 57A 16 VDS= 64V VDS= 40V VDS= 16V 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 100 0 1 10 100 40 80 120 160 200 Q G Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000.0 10000 100.0 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) T J = 175C 10.0 T J = 25C 1.0 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 1000 100 100sec 10 1msec 1 Tc = 25C Tj = 175C Single Pulse 10msec 0.1 1.8 1 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF1312/S/LPbF 100 VGS 80 ID , Drain Current (A) RD VDS LIMITED BY PACKAGE D.U.T. RG + -VDD 60 V GS Pulse Width 1 s Duty Factor 0.1 % 40 Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150 175 T C , Case Temperature (C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 (Z thJC) D = 0.50 Thermal Response 0.20 0.1 0.10 P DM 0.05 0.02 t1 SINGLE PULSE (THERMAL RESPONSE) t2 0.01 Notes: 1. Duty factor D = 2. Peak T 0.01 0.00001 0.0001 0.001 t1/ t 2 J = P DM x Z thJC +T C 0.01 0.1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF1312/S/LPbF 500 15V D.U.T RG IAS VGS 20V DRIVER + V - DD 400 A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) L VDS ID TOP 23A BOTTOM 40A 57A 300 200 100 0 25 50 75 100 125 150 Starting TJ, Junction Temperature (C) 175 Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F VGS QGS D.U.T. QGD + V - DS VGS VG 3mA IG Charge Fig 13a. Basic Gate Charge Waveform 6 ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRF1312/S/LPbF Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + RG * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test VGS * + - VDD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple 5% [ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET(R) power MOSFETs www.irf.com 7 IRF1312/S/LPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information E XAMPL E : T H IS IS AN IR F 1010 L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" Note: "P" in assembly line position indicates "Lead-Free" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE 8 PAR T NU MB E R DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C www.irf.com IRF1312/S/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information THIS IS AN IRF530S WITH LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN THE AS S EMBLY LINE "L" INTERNATIONAL RECTIFIER LOGO Note: "P" in assembly line pos ition indicates "Lead-Free" PART NUMBER F530S ASS EMBLY LOT CODE DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L OR INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE www.irf.com PART NUMBER F530S DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 0 = 2000 WEEK 02 A = ASSEMBLY SITE CODE 9 IRF1312/S/LPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN T HE AS S EMBLY LINE "C" Note: "P" in as sembly line position indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY L OT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C OR INT ERNAT IONAL RE CT IFIER LOGO AS S EMBLY LOT CODE 10 PART NUMBER DAT E CODE P = DE S IGNAT ES L EAD-FREE PRODUCT (OPT IONAL) YEAR 7 = 1997 WEEK 19 A = AS S E MBL Y S IT E CODE www.irf.com IRF1312/S/LPbF D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 30.40 (1.197) MAX. 26.40 (1.039) 24.40 (.961) 3 4 Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 0.15mH R G = 25, IAS = 57A. (See Figure 12) ISD 57A, di/dt 410A/s, VDD V(BR)DSS, T J 175C Pulse width 400s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. This is only applied to TO-220AB package This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. TO-220AB package is not recommended for Surface Mount Application Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/04 www.irf.com 11 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/