IRF1312/S/LPbF
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Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 92 ––– ––– S VDS = 25V, ID = 57A
QgTotal Gate Charge –– – 93 140 ID = 57A
Qgs Gate-to-Source Charge ––– 36 ––– nC VDS = 40V
Qgd Gate-to-Drain ("Miller") Charge ––– 34 ––– VGS = 10V,
td(on) Turn-On Delay Time ––– 25 ––– VDD = 40V
trRise Time ––– 130 ––– ID = 57A
td(off) Turn-Off Delay Time ––– 47 ––– RG = 4.5Ω
tfFall Time ––– 51 ––– VGS = 10V
Ciss Input Capacitance ––– 5450 ––– VGS = 0V
Coss Output Capacitance ––– 550 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 340 ––– pF ƒ = 1.0MHz
Coss Output Capacitance ––– 1910 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 380 ––– VGS = 0V, VDS = 64V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 620 ––– VGS = 0V, VDS = 0V to 64V
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy ––– 250 mJ
IAR Avalanche Current––– 57 A
EAR Repetitive Avalanche Energy––– 21 mJ
Avalanche Characteristics
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V T J = 25°C, IS = 57A, VGS = 0V
trr Reverse Recovery Time ––– 64 96 ns TJ = 25°C, IF = 57A
Qrr Reverse RecoveryCharge ––– 150 230 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Diode Characteristics
95
380 A
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 80 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.078 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance – –– 6.6 10 mΩVGS = 10V, ID = 57A
VGS(th) Gate Threshold Voltage 3.5 ––– 5. 5 V VDS = VGS, ID = 250µA
––– ––– 1.0 µA VDS = 76V, VGS = 0V
––– ––– 250 VDS = 64V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V
IGSS
IDSS Drain-to-Source Leakage Current